diffusion and ion implantation 49
Báo cáo hóa học: " A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping" docx
Ngày tải lên :
22/06/2014, 00:20
... Conclusion In conclusion, we have demonstrated a novel method to form p–n junction NW diodes by combining two well- 123 established doping techniques—in-situ doping and ion implantation, in succession ... p–n junction NW after the P ion implantation and removal of the SOG h SEM image of a p–n junction NW 3.2 1013 cm-2, respectively The NWs were tilted by 7° with respect to the impinging ions (Fig ... two-step implantation of phosphorus ions at room temperature was used to obtain a rectangular dopant profile The implantation energies were 45 and 25 keV corresponding to doses of 1.3 1014 and 123...
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A modeling study of ion implantation in crystalline silicon involving monte carlo and molecular dynamics methods
Ngày tải lên :
12/09/2015, 21:02
... contributions of present work 191 8.2 Recommendations for future work: Diffusion studies 197 8.2.1 Diffusion- limited reaction model and simulation method 198 8.2.2 Theoretical diffusion model ... all these processes, ion implantation and dopant diffusion are particularly strongly affected by device miniaturization and remains an active area of study Ion implantation has been a dominant ... tilt and 0° rotation and 5keV 6×1013 atoms/cm2 45° tilt and 45° rotation 83 4.12 Comparison of experimental SIMS data and simulation for P 1keV 5×1013 atoms/cm2 0° tilt and 0° rotation and 5keV...
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Modelling and simulation of ion implantation induced damage
Ngày tải lên :
14/09/2015, 09:22
... oxidation, ion implantation, diffusion and thin film deposition Among these processes, ion implantation and annealing are especially important, since the formation of ultra-shallow junctions is ... and defect configurations Defect production mechanisms, damage kinetics during ion implantation, damage evolution, amorphization and recrystallization must be accurately simulated in silicon and ... activation Understanding of ion implantation induced damage is crucial as it affects final junction properties, such as dopant profile and dopant activation Defects induced by ion implantation are...
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Báo cáo khoa học: Implication for buried polar contacts and ion pairs in hyperthermostable enzymes pot
Ngày tải lên :
07/03/2014, 05:20
... polar contacts and ion pairs as structural elements related to the thermal stability Because intermolecular and intramolecular polar interactions such as hydrogen bonds [11–13] and salt linkages ... homodimers Their Z score and rmsd values range ˚ ˚ between 14.8 and 7.0 A and between 1.07 and 2.38 A, FEBS Journal 274 (2007) 4012–4022 ª 2007 The Authors Journal compilation ª 2007 FEBS 4015 4016 ... mosophilic and thermophilic counterparts In addition, ArATPh has a much higher rate of buried ion pairs than ATs from other species Recent surveys on the exposure of ionizable groups to solvent [59], ion...
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Diffusion and Use of Genomic Innovations in Health and Medicine: Workshop Summary pot
Ngày tải lên :
14/03/2014, 23:20
... Diffusion and Use of Genomic Innovations in Health and Medicine: Workshop Summary http://www.nap.edu/catalog/12148.html Diffusion and Use of Genomic Innovations in Health and Medicine ... reserved Diffusion and Use of Genomic Innovations in Health and Medicine: Workshop Summary http://www.nap.edu/catalog/12148.html PLANNING COMMITTEE ON DIFFUSION AND USE OF GENOMIC INNOVATIONS IN ... Copyright © National Academy of Sciences All rights reserved Diffusion and Use of Genomic Innovations in Health and Medicine: Workshop Summary http://www.nap.edu/catalog/12148.html DIFFUSION AND USE...
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Báo cáo khoa học: Chain initiation on type I modular polyketide synthases revealed by limited proteolysis and ion-trap mass spectrometry doc
Ngày tải lên :
16/03/2014, 18:20
... addition, the observation of acyl-intermediates on ATL-ACPL and KS1 demonstrates that the formed acyl-enzyme intermediates are stable under the digestion and analytical conditions used here, and ... concentration of 52 lm The reaction mixture was incubated at 30 °C for min, and a portion was then analyzed by LC-MS To the rest of the reaction mixture propionyl-CoA was added to a final concentration ... the labelled substrates from the ATL [21] Discussion DEBS1-TE, DEBS3 and DKS were subjected to limited tryptic digestion, and the digestion conditions were optimized for each protein so that domains...
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Báo cáo khoa học: Roles of adenine anchoring and ion pairing at the coenzyme B12-binding site in diol dehydratase catalysis pptx
Ngày tải lên :
23/03/2014, 06:20
... 13480195 and 17370038 and Priority Areas 753 to T Toraya, and (C) 14580627 to T Tobimatsu] from the Japan Society for Promotion of Science and the Ministry of Education, Culture, Sports, Science and ... enzyme upon the Ala substitution, and slightly lowered upon the Gln substitution at the b135 residue This might be due to hydrogen bonding and interactions other than the ion pairing being strong ... sequencing of the DNA region encompassing the entire diol dehydratase genes and tac promoter that no unintended mutations had been incorporated during mutagenesis Expression and purification of mutant diol...
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Báo cáo khoa học: Nuclear factor kappa B and tumor necrosis factor-alpha modulation of transcription of the mouse testis- and pre-implantation development-specific Rnf33⁄Trim60 gene pot
Ngày tải lên :
29/03/2014, 00:20
... RNF33 β-actin Fig Confirmation of NF-jB modulation of Rnf33 expression by siRNA knockdown of p65 and p50 (A) p65 and p50 knockdown and Rnf33 transcriptional down-regulation TM4 cells were individually ... Identification of the core promoter elements In the experiments, mutation and deletion luciferase constructs were derived from the F1 fragment that contained the upstream regulation region, exon and ... F1mutI; both the aTATA deletion and the Inr mutation were included in the double mutant F1DaT ⁄ mutI (Fig 3A, left-hand panel) In transfection and luciferase assays, a reduction of 35% or 25% in...
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Báo cáo khoa học: Azotobacter vinelandii rhodanese Selenium loading and ion interaction studies potx
Ngày tải lên :
31/03/2014, 07:20
... maintained at 23 °C, and the protein concentration was kept constant at lM The excitation and emission bandwidths were and nm, respectively The excitation wavelength was set at 286 nm, and the spectra ... Azotobacter vinelandii highlights the evolutionary relationship between the rhodanese and phosphatase enzyme families J Mol Biol 298, 691–704 Ó FEBS 2003 Rhodanese interaction with ions and selenium ... to 12.1 ppm) on conversion of the enzyme from the E to the ES form on addition of thiosulfate ions (E/thiosulfate, : 10) (C) Ó FEBS 2003 Rhodanese interaction with ions and selenium loading (Eur...
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Báo cáo hóa học: " Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application" pot
Ngày tải lên :
21/06/2014, 05:20
... interface and/ or to the surface of control layer by suitably varying the implantation parameters and annealing condition The dependence of implantation energy for the formation and evolution of ... same annealing condition without any Ge+ implantation and were defined as the control sample The formation and evolution of GeNCs have been investigated using high-resolution electron microscopy ... result of ion implantation and annealing There is no significant increase of the HfO2 thickness while the interfacial SiO2 (IL) layer increases from 1.2 to 1.9 nm as a result of implantation and annealing...
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Báo cáo hóa học: " Research Article From Newton’s Equation to Fractional Diffusion and Wave Equations" pptx
Ngày tải lên :
21/06/2014, 05:20
... Equations i Fractional calculus provides a natural interpolation between different equations For instance, we have the fractional interpolation between the wave equation hyperbolic and the diffusion ... open issue to analyze the relation of the different fractionalizations at the discrete and the continuous levels iii The standard diffusion equation The diffusion equation 2.6 appears in very different ... fractional wave and Dirac equations is their behaviour with respect the discrete symmetries: time T and space inversion P 43 This analysis of the fractional wave, diffusion, and Dirac equations,...
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Báo cáo hóa học: " Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy" pot
Ngày tải lên :
21/06/2014, 05:20
... data and wrote the article SS carried out the sample preparation, the measurements and participated to the analysis of the data ER worked on the evaluation of ion- graphene interaction cross sections ... morphological and spectroscopic characterization of graphene on SiO2 Phys Status Solidi C 2010, 7:1251 14 Compagnini G, Giannazzo F, Sonde S, Raineri V, Rimini E: Ion irradiation and defect formation in ... modulating bias between the substrate and the tip locally induces a shift of the graphene quasi-Fermi energy EF in the conduction band, and, hence, an accumulation of electrons at the SCM Electronic...
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Báo cáo hóa học: " Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy" potx
Ngày tải lên :
21/06/2014, 06:20
... data and wrote the article SS carried out the sample preparation, the measurements and participated to the analysis of the data ER worked on the evaluation of ion- graphene interaction cross sections ... morphological and spectroscopic characterization of graphene on SiO2 Phys Status Solidi C 2010, 7:1251 14 Compagnini G, Giannazzo F, Sonde S, Raineri V, Rimini E: Ion irradiation and defect formation in ... modulating bias between the substrate and the tip locally induces a shift of the graphene quasi-Fermi energy EF in the conduction band, and, hence, an accumulation of electrons at the SCM Electronic...
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Báo cáo hóa học: " Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing" potx
Ngày tải lên :
22/06/2014, 18:20
... proton implantation, the QD GS luminescence peak (P10 ) from the implanted region is blue shifted with respect to peak P1 from the un-implanted region Under the implantation and annealing conditions ... interdiffusion due to background (grown-in) defect levels, whereas the shift between the annealed only device and device annealed after implantation is due to implantation induced differential band ... region of the device structures annealed with and without implantation For the un-implanted region, the QD ground state (GS) luminescence peaks at 1015 nm (P1) Due to enhanced interdiffusion...
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ION IMPLANTATION potx
Ngày tải lên :
27/06/2014, 00:20
... involve ion implantation This book presents a collection of chapters which address novel aspects of ion implantation: beam manipulation and modification, beam-solid interactions, physical and chemical ... Spatial resolution of ion implantation and its limiting factors In the process of ion implantation, the spatial resolution is defined as the precision in the final position of an implanted ion in the ... understanding of beam-solid interactions, applications to new materials, and the recent developments to use implantation for nanostructure formation point to new directions for ion implantation...
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Spinal Disorders: Fundamentals of Diagnosis and Treatment Part 49 doc
Ngày tải lên :
02/07/2014, 06:20
... Efficacy of spinal manipulation and mobilization for low back pain and neck pain: a systematic review and best evidence synthesis Spine J 4:335 – 56 Chapter 17 469 470 Section Degenerative Disorders ... cervical fusion and Caspar plate stabilization for cervical trauma Neurosurgery 25 :491 – 502 47 Caspar W, Geisler FH, Pitzen T, Johnson TA (1998) Anterior cervical plate stabilization in one- and two-level ... cervical fusion comparison of the standard and modified techniques Spine 19:660 – 78 Emery SE, Fisher JRS, Bohlman HH (1997) Three-level anterior cervical discectomy and fusion Radiographic and clinical...
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Signaling System No.7 Protocol Architecture And Sevices part 49 pot
Ngày tải lên :
02/07/2014, 09:20
... application server The server checks the balance and then issues call handling instructions back to the MSC in the visited network USS is still likely to find applications even in 3G networks Operations ... using seven bits) and are carried within the MAP operation USSD uses the dialogue facility (which is connection oriented) of TCAP and is specified in GSM 02.90 (USSD Stage 1) and GSM 03.90 (USSD ... on a store and forward mechanism, USSD is session oriented and, therefore, has a faster turnaround and response time than SMS, which is particularly beneficial for interactive applications USSD...
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Handbook of mathematics for engineers and scienteists part 49 doc
Ngày tải lên :
02/07/2014, 13:20
... lder condition is often called the Lipschitz condition Sometimes the H¨ lder o o condition is called the Lipschitz condition of order λ o If x1 and x2 are sufficiently close to each other and if the ... o functions The narrowest class is that of functions satisfying the Lipschitz condition o It follows from the last property that if functions f1 (x) and f2 (x) satisfy the H¨ lder condition with ... transform, and Section T3.1 gives tables of the Laplace transforms of various functions 307 7.2 DEFINITE INTEGRAL ∞ sin(ax) dx x Using Table 11.2 from Subsection 11.2.2 (or the table from Subsection...
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NTC''''s Pocket Dictionary of Words and Phrases part 49 ppt
Ngày tải lên :
04/07/2014, 22:20
... education or training n all or most of the people who work in a certain Q professional [pr@ "fES @ n@l] the adj form of profession Q (Adv: professionally.) adj showing the skill and standards ... likely; likely to happen or likely to be true probation [pro "be S@n] n a situation where an offender remains out of jail and just under observation as long as no further crimes are committed (No ... ["prImp] iv to dress and get ready for a social event very carefully prince ["prIns] n the son or grandson of a king or a queen n the husband of a woman who inherits the throne and becomes queen...
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