consequences for legal theory and practice

... tainted by pockets of poorly informed practice Professional, evidence-based practice for enhancing wellbeing is now more feasible and this means that the credibility, value and longevity of well-being ... identified and attended to this need by introducing Psychology of WellBeing: Theory, Research and Practice In addition, Springer supports the notion that scientific findings should be accessed by all and ... an online, open access format This means that the end users will now also be able to read Page of Vella-Brodrick and Rickard Psychology of Well-Being: Theory, Research and Practice 2011, 1:1 http://www.psywb.com/content/1/1/1...

Ngày tải lên: 21/06/2014, 06:20

... sources of leakage current, and each of these has a different dependence on both voltage and temperature [17] Understanding of the relation between leakage and both voltage and temperature requires ... current is due to band-to-band tunneling in the presence of high electric field and traps in the band gap If the electric field is high enough, carriers can simply tunnel across the band gap However, ... Core for Low-Power and High-Performance Applications,” IEEE Journal of Solid-State Circuits, Vol 36, pp 1599–1608, November 2001 [2] M Meijer, F Pessolano, and J P de Gyvez, “Limits to Performance...

Ngày tải lên: 21/06/2014, 22:20

... determine power-performance trade-offs and leakage reduction factors with AVS and ABB Each ring-oscillator uses minimum-sized standard-cell inverters as delay elements and a nand-2 gate for enabling ... Power and Frequency Tuning The ultimate use of the AVS and ABB schemes is for performance tuning with performance being the optimal combination of frequency and power, i.e the lowest power for ... Figure 2.5 Frequency scaling and tuning for the 65nm LP-CMOS ringo Let us now investigate the frequency-scaling and tuning ranges offered by AVS and ABB in 65nm LP-CMOS For this purpose, we determined...

Ngày tải lên: 21/06/2014, 22:20

... useful for power and delay tuning in the state-of-the-art CMOS technologies We observe the benefits of AVS primarily for low power and of ABB for performance tuning For instance, for a 65nm LP-CMOS, ... previous results for compensating process-dependent frequency and leakage spread The values for frequency, power supply voltage, and leakage current are plotted for reference and tuned process ... Nair, D Antoniadis, A Chandrakasan, and Vivek De, “Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage”, IEEE Solid-State...

Ngày tải lên: 21/06/2014, 22:20

... reduced, and forward body bias (in this example, NMOS forward body bias) can be applied to further increase the performance This combination reduces the guardband needed for maximum temperature and, ... proper logic levels for correct functionality IN−NOR OUT−NAND ,V 0.15 0.1 V V OUT−NAND ,V IN−NOR 0.2 0.05 0 0.2 0.15 0.1 0.05 Logic failure NAND NOR 0.05 V NAND NOR 0.1 0.15 ,V IN−NAND 0.2 OUT−NOR ... power for the FBB design at the same clock frequency When the adder is put into standby mode, ZBB is used for the core, and this results in a leakage reduction of 2× Total power savings for the...

Ngày tải lên: 21/06/2014, 22:20

... energy References [1] V Gutnik and A Chandrakasan, “Embedded power supply for low-power DSP,” IEEE Trans VLSI Syst., vol 5, no 4, pp 425–435, Dec 1997 [2] A Sinha and A Chandrakasan, “Dynamic power ... analysis and optimization for VLSI: timing and power,” New York, Springer, pp 79–132, 2005 Chapter Adaptive Supply Voltage Delivery for U-DVS Systems 121 [11] B Zhai, S Hanson, D Blaauw, and D ... equation: V − VDD τN = BAT VDD τP (5.4) where τN and τP are the NMOS and PMOS ON-times and VBAT is the battery voltage Thus, by fixing τP, the values of τN for specific load voltages can be predetermined...

Ngày tải lên: 21/06/2014, 22:20

... essentially an FET wire; and NAND and NOR gate paths consisting of a series of 4-high NAND and 3-high NOR gates respectively Simulations were performed at two frequencies, F and F/3 where F was 4.5 ... important to understand these processes and their effect on the number and location of critical path monitors Chapter Sensors for Critical Path Monitoring 149 7.3.1 Process Variation Random, uncorrelated ... the capacitance/width of the drain, and Rw and Cw are the resistance and capacitance per unit length of the wire For buses, the value of l is large, while for dense logic, the value of l can...

Ngày tải lên: 21/06/2014, 22:20

... 0.2 0 -3 -2 -1 -3 ΔTWID, standard deviations -2 -1 ΔTWID, standard deviations Figure 9.4 PDFs and CDFs for ΔTWID Results are shown in Table 9.3, assuming a path delay standard deviation of 5% This ... delay-error detection and correction,” IEEE Journal of Solid-State Circuits, pp 792–804, April 2006 Chapter Architectural Techniques for Adaptive Computing 205 [29] R Sproull, I Sutherland, and C Molnar, ... Blaauw, S.Kalaiselvam, K Lai, W.Ma, S Pant, C Tokunaga, S Das and D.Bull “RazorII: In-situ error detection and correction for PVT and SER tolerance,” International Solid-State Circuits Conference,...

Ngày tải lên: 21/06/2014, 22:20

... and 1,000 million instructions and gathering statistics for 100 million more The one exception was 188.ammp, which finished too early Instead, it was fast-forwarded 200 million instructions and ... the effort, hardware, and power are expended on something which is rarely used Given random operands, the longest carry chain in an N-bit adder is O(N), but the average length is O(log2(N)); for ... the performance and causes it to be clocked at a lower speed One solution is to use some control scheme similar to those used for DVFS to decide whether a domain should actually be sped up and by...

Ngày tải lên: 21/06/2014, 22:20

... cache sleeping and methods for regulating the sleep voltage, as well as schemes for taking the cache into and out of sleep are discussed Finally, the chapter examines the yield and reliability, ... workloads, allowing hardware resources to be optimised for typical rather than very rare operand values, and they can adapt very flexibly (and continuously, rather than in discrete steps) to variable ... however, it can provide benefits and is another tool available to the designer Figure 10.7 Pipeline collapsing and losing latch stage Figure 10.8 Pipeline expanding and reinstating latch stage 244...

Ngày tải lên: 21/06/2014, 22:20

... standpoint, both analog and architectural designs require similarly sized guard-bands (Adaptive Op Point, Figure 12.18) to guarantee power stays within limits Because of issues in testing and ... App Activity Code @ Pmax 1.20 No Adapt Op Point 1.10 1.00 Large Guardband for Power measurment variability Small Guardband for Test environment issues 0.90 0.80 1.00 1.20 1.40 1.60 1.80 Frequency ... Thermal and Power Management of Integrated Systems Arman Vassighi and Manoj Sachdev ISBN 978-0-387-25762-4, 2006 Leakage in Nanometer CMOS Technologies Siva G Narendra and Anantha Chandrakasan...

Ngày tải lên: 21/06/2014, 22:20

... quantity and is plotted upward on the energy-band diagram If E, and E, are the energy levels for the lower edge of the conduction band and upper edge of the valence band respectively, then the band ... Semiconductor and p n Junction Theory FREE ELECTRON (-) HOLE (+I Fig 2.1 Energy band diagram of a semiconductor (silicon) separate bands of allowed energies, called the valence band and the conduction band ... semiconductor and silicon are used interchangeably 2 Basic Semiconductor and pn Junction Theory 22 CONDUCTION BAND - eV(P) + €, 7- - E d Eg=1-12eV I L VALENCE BAND EV t VALENCE BAND (a) (b) CONDUCTION BAND...

Ngày tải lên: 27/06/2014, 05:20

... quantity and is plotted upward on the energy-band diagram If E, and E, are the energy levels for the lower edge of the conduction band and upper edge of the valence band respectively, then the band ... Semiconductor and p n Junction Theory FREE ELECTRON (-) HOLE (+I Fig 2.1 Energy band diagram of a semiconductor (silicon) separate bands of allowed energies, called the valence band and the conduction band ... semiconductor and silicon are used interchangeably 2 Basic Semiconductor and pn Junction Theory 22 CONDUCTION BAND - eV(P) + €, 7- - E d Eg=1-12eV I L VALENCE BAND EV t VALENCE BAND (a) (b) CONDUCTION BAND...

Ngày tải lên: 27/06/2014, 18:20

... experience, values, contextual information and expert insight that provide a framework for evaluation and incorporating new experiences and information” (Davenport and Prusak 1997, p 5) Prior research ... what information will be requested, who will request the information, who will supply the information, and when and how the information will be used This makes determining requirements for KMS ... and groups sharing similar tasks—the communities of practice (Brown and Duguid 1991)—play an important role in communicating and sharing knowledge However, communities have their own unique and...

Ngày tải lên: 30/06/2014, 21:16

... the effort, hardware, and power are expended on something which is rarely used Given random operands, the longest carry chain in an N-bit adder is O(N), but the average length is O(log2(N)); for ... cache sleeping and methods for regulating the sleep voltage, as well as schemes for taking the cache into and out of sleep are discussed Finally, the chapter examines the yield and reliability, ... propagation To speed them up requires considerable effort, and hence hardware, and hence energy is typically expended in fast carry logic of some form This ensures that the critical path – propagating...

Ngày tải lên: 06/08/2014, 01:21

... Chapter 11 Dynamic and Adaptive Techniques in SRAM Design 265 For example, the “wake” transistors must be turned on and off as the cache exits and enters sleep If the cache enters and exits sleep ... P1 and P1’ FETs clamp SramVSS at A1, while the matching P2 and P2’ FETs clamp SramVSS at A2 The resulting SramVSS is the lower of A1 and A2, producing Equation (11.1) Chapter 11 Dynamic and ... simultaneously optimize for both read and write margins in the same operation, as needed in a column-multiplexed design Therefore, rowbased voltage manipulation tends to be more suitable for non-columnmultiplexed...

Ngày tải lên: 06/08/2014, 01:21

... voltage, frequency, and thermal testing of the processor—this is known as “functional testing” Class testers and device handlers are very complex and expensive pieces of equipment that handle all of ... power supply shorts, shorts and opens on a limited number of I/O pads and basic functionality Basic functionality testing is performed through special test modes and “backdoor” features that ... each and every time a test runs passing or failing 12.2.2 Manufacturing Test Manufacturing production test is focused on screening for defects and the determination of the frequency, power, and...

Ngày tải lên: 06/08/2014, 01:21

... Limitations and Guard-Banding In traditional testing, margin (also known as guard-band) is used to ensure reliable operation when the part is operating in less than ideal conditions Guard-bands are ... time, transistor performance degrades Adaptive circuit techniques are often used to enable reductions in these guard-bands For example, a part that can measure its own power and can react to it ... and VCO nonlinearities As a result, implementation details determine whether or not actual guard-banding is reduced In the case of power measurement on the Itanium 2, the sum of guard-bands for...

Ngày tải lên: 06/08/2014, 01:21

... catalogue record for this book is available from the British Library MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electronics and Technology ... editors and this monograph volume’s copy editor Mr Tjan Kwang Wei at Singapore, led by Dr Yubing Zhai at New Jersey, for their and her timely efforts, and Professor Kok-Khoo Phua, Founder and Chairman ... (Corporate Consultant) and Dr Llanda Richardson (Consultant )for their encouragement and assistance in writing this book I am deeply indebted to Dr F Fox, Dr D Ramey, and Mr K Mistry for their excellent...

Ngày tải lên: 13/08/2014, 05:22