6 scanner devices and techniques

Optoelectronics Devices and Applications Part 6 pptx

Optoelectronics Devices and Applications Part 6 pptx

Ngày tải lên : 19/06/2014, 11:20
... narrow-band interference filter, centred at the same wavelength as a strong absorption band of CH4 (Q-branch centred at 1 .66 6 μm), whilst the other filter covered a broader spectral range, and consequently ... & Powell (1 968 ) also described the development of early gas analysers that were manufactured during the 1950s and 1 960 s and the development of early infra-red detectors Goody (1 968 ) explored ... maximum 192 Optoelectronics – Devices and Applications Optoelectronics / Book Wavelength Absorption Band Reference 1.89–2.09 μm v1 +v4 Brown & Margolis (19 96) v3 +v4 6. 00 μm 2v2 /v4 Cottaz et al...
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Optoelectronics Materials and Techniques Part 6 ppt

Optoelectronics Materials and Techniques Part 6 ppt

Ngày tải lên : 19/06/2014, 11:20
... lattice parameter a = 5 .66 8 Å or wurtzite structure with lattice parameters a = 3.820 Å and c = 6. 6 26 Å The lattice constant value of cubic silicon is reported as 5 .65 76 (JCPDS, 1990, card number ... 553 and 589 K The lattice constant values are calculated as 5.72, 5 .67 8 and 5 .67 85Å at 483, 553 and 589 K, respectively If we compare these values with the reported value of bulk aZnSe (5 .66 84 ... levels and was used for studying bound excitons [Jang et al (20 06) ] Highly diffusive nature of excitons in Cu2 O are described in Trauernicht & Wolfe (19 86) 1 46 Optoelectronics - Materials and Techniques...
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Nanotechnology and Nanoelectronics Materials, Devices, Measurement Techniques ppt

Nanotechnology and Nanoelectronics Materials, Devices, Measurement Techniques ppt

Ngày tải lên : 27/06/2014, 06:20
... Silicon 121 6. 1.2 Characterization of Nanocrystalline Silicon 122 6. 1.3 Applications of Nanocrystalline Silicon 1 26 6.1.4 Evaluation and Future Prospects 1 26 6.2 Zeolites and Nanoclusters ... Optical Lithography . 161 7.3.4 Electron Beam Lithography 164 7.3.5 Ion Beam Lithography 168 7.3 .6 X-Ray and Synchrotron Lithography 169 7.3.7 Evaluation and Future Prospects ... 127 6. 2.1 Description of Zeolites 127 6. 2.2 Production and Characterization of Zeolites 128 6. 2.3 Nanoclusters in Zeolite Host Lattices .135 6. 2.4 Applications of Zeolites and Nanoclusters...
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FINANCIAL ANALYSIS: TOOLS AND TECHNIQUES CHAPTER 6 pot

FINANCIAL ANALYSIS: TOOLS AND TECHNIQUES CHAPTER 6 pot

Ngày tải lên : 01/07/2014, 22:20
... reinvested after payment of dividends 8% 16 16 16 70.20 75 .66 21 .60 _ 23.33 _ 45.00 20.00 48 .60 21 .60 52.33 23.33 $65 .00 $70.20 $75 .66 8% 16 — 8% 16 8 8% 16 8 213 *This exhibit is available in ... 0% 0% $60 .50 $ 40.00 $ 46. 40 0 $ 40.00 $ 46. 40 $53.82 $20.00 $21 .60 $23.33 $55.00 $60 .50 $ 80.00 $ 92.80 $107 .64 $40.00 $43.20 $ 46. 66 $60 .50 31.00 $ 40.00 25.00 $ 46. 40 30.00 $ 53.82 36. 00 $40.00 ... return on assets 8% 16 16 16 65.00 20.00 _ Page 213 $60 5.0 0% 50% 291 .6 291 .6 11:13 AM $550.0 0% 50% 270.0 270.0 Period $500.0 0% 50% 250.0 250.0 Period 0% $60 5.0 0% 50% 3 36. 4 3 36. 4 Period 0% $550.0...
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Financial Analysis: Tools and Techniques Phần 6 pps

Financial Analysis: Tools and Techniques Phần 6 pps

Ngày tải lên : 05/08/2014, 13:20
... 5.724 5.847 5.954 6. 047 6. 128 6. 198 6. 259 6. 312 6. 359 6. 399 6. 434 6. 464 6. 491 6. 514 6. 534 6. 551 6. 566 6. 617 6. 642 6. 654 6. 661 6. 665 0. 862 1 .60 5 2.2 46 2.798 3.274 3 .68 5 4.039 4.344 4 .60 7 4.833 5.029 ... 5.029 5.197 5.342 5. 468 5.575 5 .66 9 5.749 5.818 5.877 5.929 5.973 6. 011 6. 044 6. 073 6. 097 6. 118 6. 1 36 6.152 6. 166 6. 177 6. 215 6. 234 6. 242 6. 2 46 6.249 0.847 1. 566 2.174 2 .69 0 3.127 3.498 3.812 ... 5.842 6. 002 6. 142 6. 265 6. 373 6. 467 6. 550 6. 623 6. 687 6. 743 6. 792 6. 835 6. 873 6. 9 06 6.935 6. 961 6. 983 7.003 7.070 7.105 7.123 7.133 7.140 0.870 1 .62 6 2.283 2.855 3.352 3.784 4. 160 4.487 4.772 5.019...
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Understanding WAP Wireless Applications, Devices, and Services phần 6 docx

Understanding WAP Wireless Applications, Devices, and Services phần 6 docx

Ngày tải lên : 07/08/2014, 21:20
... wireless devices far beyond those limited to pocket electronic organizers and cellular voice People and businesses have become accustomed to the availability of quick and easy communications and are ... protocols and possibly also perform various transformations on the content In doing so, the security chain between the push initiator and the mobile client is broken The lower part of Figure 6. 6 attempts ... with each other in order to be able to launch successful service concepts 6. 6.2 Understanding the value chain When understanding the mechanisms for creating customer value, the next step is to find...
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Data Mining Concepts and Techniques phần 6 ppt

Data Mining Concepts and Techniques phần 6 ppt

Ngày tải lên : 08/08/2014, 18:22
... senior senior junior 31 35 26 30 31 35 21 25 31 35 26 30 41 45 36 40 31 35 46K 50K 26K 30K 31K 35K 46K 50K 66 K 70K 46K 50K 66 K 70K 46K 50K 41K 45K 30 40 40 20 ... 1.0 6. 16 Summary 373 1.0 true positive rate 0.8 0 .6 0.4 0.2 0.0 0.0 0.2 0.4 0 .6 0.8 1.0 false positive rate Figure 6. 33 The ROC curves of two classification models 6. 16 Summary Classification and ... Agrawal, and Rissanen [MAR 96] ), SPRINT (Shafer, Agrawal, and Mehta [SAM 96] ), RainForest (Gehrke, Ramakrishnan, and Ganti [GRG98]), and earlier approaches, such as Catlet [Cat91], and Chan and Stolfo...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 14 pdf

Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 14 pdf

Ngày tải lên : 12/08/2014, 02:23
... L1 465 Klein D, Roth R, Lim AKL, Alivisatos AP, McEuen P (1997) A single-electron transistor made from a cadmium selenide nanocrystal Nature, vol 389, p 69 9 References 364 365 366 367 368 369 ... 48, 64 , 227 exposure 155 – contact 155 – depth of focus 157 – EUV 161 – non-contact 1 56 – PREVAIL 167 – projection 157, 168 – resolution 157 – SCALPEL 166 extreme ultraviolet 161 F F2 laser 161 ... varactor 13 multi beam writer 166 multi column writer 166 multi wall nanotube 233 multiple beam interference 66 N nanocluster, see also cluster, 34, 1 16 – AsS 138 – CdS 1 36 – in zeolite host lattices...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 2 pot

Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 2 pot

Ngày tải lên : 12/08/2014, 02:23
... a good number of devices such as lasers, resonant tunneling devices or single-electron transistors They will be treated in the section on electrical nanodevices 2 .6 Evaluation and Future Prospects ... with the help of molecular mechanics and dynamics [14– 16] 2 .6 Evaluation and Future Prospects 15 Fig 2.12 Conduction band edge, wave function, and energy levels of a heterojunction by resonant tunneling ... print of the material and its specific defects p-type Czochralski (Cz) Si is plasma-treated for 120 at 250 °C and annealed in air for 10 at temperatures between 250 °C and 60 0 °C The Raman shift...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 3 pdf

Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 3 pdf

Ngày tải lên : 12/08/2014, 02:23
... Black symbols: 1·1015, 1·10 16, and 3·10 16 cm hydrogen dose, E = 70 keV, dark-gray symbols: 1·10 16 cm helium dose, E = 300 keV, light-gray symbols: 1·1015, 1·10 16, and 1·1017 cm helium dose, E ... Both sections can be produced with standard silicon technology (ii) Porous silicon Chemical and electrochemical etching [ 36 and literature quoted therein] and ion implantation [37] are used for ... silicon-on-sapphire (SOS), and silicon-onoxide (SOI) The latter includes versions like (i) oxygen implantation and SiO2 formation, (ii) deposition of amorphous Si on SiO2 and recrystallization, and (iii) wafer...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 5 doc

Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 5 doc

Ngày tải lên : 12/08/2014, 02:23
... and the two-probe measurement is applied Here, the feed current and the applied voltage are measured in only one pair of points A correction factor between V / I and is also needed The pros and ... of the silicon k3 = 0.028, = 5 46. 1 nm [71] 4.2 Characterization of Nanolayers 73 mine the two angles of rotation of analyzer and polarizer simultaneously Such devices are commercially available ... dielectric function rather than and are plotted The transformation of and to is given by sin sin 2 1 tan (cos 2 sin 2 sin ) (1 sin cos ) tan sin sin (1 sin cos ) and (4.24a) (4.24b) An example...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 8 pptx

Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 8 pptx

Ngày tải lên : 12/08/2014, 02:23
... estimate Fig 7.4 0.2 0.4 0 .6 0.8 Pressure, kPa 1.0 1.2 1.4 Removal rate as a function of pressure 1 .6 145 1 46 Nanostructuring Removal rate, µm / h yfit = 6. 157e-0.31996x % error estimate 1.75 1.25 ... there is no demand in this area at the moment 148 Nanostructuring 1331 1·104 1·104 Intensity, arb units 1·104 Broad non-diamond carbon band 9·103 8·103 12 06 7·103 6 103 1000 1200 1400 160 0 1800 Wave ... and is thus thermally and not metallically activated It is questionable or even doubtful whether this method of producing quasi-one-dimensional conducting structures is a suit- 6. 2 Zeolites and...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 9 doc

Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 9 doc

Ngày tải lên : 12/08/2014, 02:23
... irregularities and the focus position, holds: DOF k2 NA (7.2) k1 and k2 are pre-factors which take into account both the entrance opening of the lenses and the coherency degree of the light, and the ... direct and thus more effective transformation of the electrical energy into light, a simple, more compact, and concomitantly low-priced setup, and a reduced debris problem Thus, at the Sandia ... manufacturing plants and research institutes use the expensive projection exposure as wafer scan, step and repeat or step scan procedure which also enables a small defect density and thus a high yield,...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 10 pptx

Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 10 pptx

Ngày tải lên : 12/08/2014, 02:23
... LMIS, Table 7.1 Alloys for LMIS Alloy Dy69Ni31 Co67Dy33 Ho70Ni30 Fe 36. 7Ho63.3 Fe18Pr82 Mn10.5Pb89.5 B45Ni45Si10 Au70Be15Si15 Au68.8Ge23.5Dy7.7 Au78.2Si13.8Dy8 Au61.8Ge28.2Mn10 Crucible Mo Mo Ta Al2O3 ... Dimming and deflecting voltages can range from some 10 to some 100 V and must be available as a wide-band (MHz to GHz) in order to achieve high dose accuracies and writing rates Navigation and Joining ... metal atoms on the one hand and remain volatile after the “cracking” on the other hand An example is tungsten hexacarbonyl, W(CO )6, which is present as a white powder under standard conditions By...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 11 ppt

Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 11 ppt

Ngày tải lên : 12/08/2014, 02:23
... processing for areas of up to inch diameter [ 265 , 266 , 2 76] Adjustment is done externally (optical alignment, clamping and transport to the imprint system) so far, and applications concentrate mainly on ... technology and alignment concepts UV molding and SFIL Development of production equipment and process technology for SFIL is pushed in intense cooperation between research institutes and industry [ 269 ] ... W = 100 µm, and tox = 4.5 nm Fig 8.2 Measured input characteristics of an NMOS transistor with L = 50 nm, W = 100 µm, and tox = 4.5 nm 2 06 Extension of Conventional Devices by Nanotechniques Fig...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 12 docx

Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 12 docx

Ngày tải lên : 12/08/2014, 02:23
... Anodic oxidation by means of STM Ea, meV Reference 23 [ 363 ] 60 [ 364 ] 92 [ 365 ] 120 [ 366 ] 130 [ 367 ] 150 [ 368 ] 1000 [ 369 ] 228 Innovative Electronic Devices Based on Nanostructures kT Ea 10 (9.4) with ... of up to 100 K 2 16 Innovative Electronic Devices Based on Nanostructures Fig 9.3 Structure and band diagram of a Si/CaF2 double barrier RTD (from [307]) Fig 9.4 Layer sequence and device structure ... 9.2 Conduction band diagram and current-voltage characteristics at 77 and 300 K of an AlAs/InGaAs RTD (from [304]) characteristics suggest both bistable and astable applications, and, indeed, the...
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creating your mysql database practical design tips and techniques phần 6 ppt

creating your mysql database practical design tips and techniques phần 6 ppt

Ngày tải lên : 12/08/2014, 11:20
... structure handle them? We can assess the risk factor associated with those exceptions, versus the cost of handling them and the possible loss in performance for the queries [ 48 ] Simpo PDF Merge and ... ENUM or SET and we are using phpMyAdmin's insertion or data edit panels, a dropdown list of the values is displayed so it might be tempting to use those data types [ 46 ] Simpo PDF Merge and Split ... *internal_number 412 quantity_cleaning_product 12 Avoiding ENUM and SET MySQL and SQL in general offer what looks like convenient data types: ENUM and SET types Both types permit us to specify a list of...
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WIRELESS TECHNOLOGYProtocols, Standards, and Techniques pdf phần 6 pot

WIRELESS TECHNOLOGYProtocols, Standards, and Techniques pdf phần 6 pot

Ngày tải lên : 14/08/2014, 06:22
... 1024 3072 2048 3072 40 96 26. 67 13.33 10.00 6. 67 5.00 3.33 1 .67 3.33 1 .67 1 .67 1 .67 Number of Slots 16 2 1 Modulation Scheme QPSK QPSK QPSK QPSK QPSK QPSK QPSK QPSK QPSK 8-PSK 16- QAM intracell interference), ... Supplemental Channels 11 13 15 10 12 14 16 Rate Set (kbit/s) Rate Set (kbit/s) 1.2, 2.4 4.8, 9 .6 19.2 28.8 38.4 48.0 57 .6 67.2 76. 8 1.8, 3 .6 7.2, 14.4 28.8 43.2 57 .6 72.0 86. 4 100.8 115.2 remaining channels, ... around ten users per TABLE 6. 4 HDR Forward-Link Throughput and SNR Data Rate (kbit/s) SNR (dB) 76. 8 102.4 153 .6 204.8 307.2 61 4.4 921 .6 1228.8 1843.2 2457 .6 −9.5 −8.5 6. 5 −5.7 −4.0 1.0 1.3 3.0...
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Energy efficient algorithms and techniques for wireless mobile clients 6

Energy efficient algorithms and techniques for wireless mobile clients 6

Ngày tải lên : 08/09/2015, 22:08
... 802.11b 60 0 10 900 875 350 62 5 new 802.11b 300 802.11g 260 280 300 802.11g* 260 280 60 300 1500 3.5G(HSPA) 201 ZigBee 50 2.5 52 * - using atheros chipset; Current - Current Consumed 5 .6 Algorithm ... the player and the vector from the payer to entity (n and BA vector in Figure 5.6c) From which we compute, (φ1 − Π/3) which is the angle the player need to turn to see this entity 166 Similarly ... DBA, VBA and RBA respectively DBA has Single Ring and Dual Ring algorithms (both algorithms have micro and macro power management modes), we refer them as DBA-SR and DBA-DR RBA has micro and macro...
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