Slide điện tử từ trường lecture 4 bipolar junction transistors

Lecture 04 Bipolar junction transistors (BJTs) Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Topics • Transistor physic operation • Transistor operation modes • Transistor current-voltage characteristics Transistor=Transfer resistor Two categories of transistor BJT FET - MOSFET - JFET Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt In 1947, John Bardeen and Walter Brattain at AT&T's Bell Labs in the United States observed that when electrical contacts were applied to a germanium crystal, the output power was larger than the input Solid State Physics Group leader William Shockley saw the potential in this, and over the next few months worked to greatly expand the knowledge of semiconductors The first silicon transistor was produced by Texas Instruments in 1954 The first MOS transistor actually built was by Kahng and Atalla at Bell Labs in 1960 •1971 : 4004 : 300 transistors •1978 : 8086 : 29 000 transistors •1982 : 80286 275 000 transistors •1989 : 80486 : 1,16 millions de transistors •1993 : Pentium : 3,1 millions de transistors •1995 : Pentium Pro : 5,5 millions de transistors •1997 : Pentium II : 27 Millions de transistors •2001 : Pentium : 42 millions de transistors •2004 : Pentium EE : 169 millions de transistors Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Structure of transistor 射極：代號E，寬度居三者之中，參雜濃度最濃。 基極：代號B，寬度最薄，參雜濃度最低。 集極：代號C，寬度最大，參雜濃度適中。 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt BJT operation mode mode EB junction CB junction active forward reverse Reverse active reverse forward saturation forward forward cutoff reverse reverse Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt comparison • NPN (electrons ) fast than PNP (holes) • NPN easy to product Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt PNP transistor in open circuit Junction voltage Vo JE + VEB − − VCE JC + + VCB − n po pno n po Minority-carrier concentrations Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt NPN transistor (Active mode) iEn iEp iCn iCp Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt JE forward-Biased : electrons injected from emitter into base ( iEn ), holes injected from base into emitter ( iEp ) In base: some electrons combined with holes ( iB2 ), most of electrons diffused to collector ( iCn ) JC reverse-Biased : electrons swept across the depletion region ( iCn ), small saturation current in depletion region ( iCp ), iE = iEn + iEp iC = iCn + iCp iEn >> iEp iB = iEp + iB − iCp iCn >> iCp iE = iC + iB iB = iEn − iCn 10 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt + 5V 4k k 130 Q4 VA VB Q1 Q2 D1 high Q3 1k + 5V 4k 1.6k 130 Q4 VA VB Q1 Q2 D1 Q3 1k low In danger 23 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Open collector + 5V 4k 1.6k External Rc VA VB Q1 Q2 Q3 1k + 5V 4k VA VB Q1 1.6k Q2 Q3 1k 24 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Current-voltage characteristics • iC VBE • iC VCB • iC VCE BJT configurations • Common-Base (CB) • Common-Emitter (CE) • Common-Collector (CC) 25 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Input Common-Base (CB) − VCE + VEB Input Output − + + VCB Output Output − Common-Emitter (CE) Output Input Output Input Common-Collector (CC) Output Input Output Input 26 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Transistor iC VBE Characteristic (change T) iC = I S e VBE VT 27 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Transistor iC VCB Characteristic (change iE ) α common-base current gain 28 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Transistor iC VCE Characteristic (change IB ) β short circuit common-Emitter current gain β DC = I CQ I BQ ΔiC β ac = h fe ≡ ΔiB Zero signal component between Emitter and collector (short circuit) vCE = K 29 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Transistor iC VCE Characteristic ( change VBE ) r0 Given VBE , if VCE ↑ → VCB ↑ JC depletion region effective base width AE qni2 Dn Is = WN A CuuDuongThanCong.com −1 ⇒ I S ↑∴ iC ∝ I S ⇒ iC ↑ Early effect 30 Microelectronic Circuit by meiling CHEN https://fb.com/tailieudientucntt Large-signal equivalent circuit ( Common Emitter in active mode ) ∂iC = ro ∂vCE VBE = K 31 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Transistor iC VCE Characteristic ( CE saturation mode) forward + + VCE − VBE small − ic ≠ βiB VCE ≈ 0.2V 32 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt saturation mode equivalent circuit 33 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Transistor breakdown punch-through breakdown VCE ↗↗→ JE and JC depletion region ↗ WB→0 JE JC VCE ↑↑ JE JC Avalanche breakdown (Impact ionization) VCE↗↗→VCB↗ JE JC 34 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt large-scale Equivalent-circuit model VBE = 0.7V VCE ≥ 0.3V VBC < 0.4V iC = βiB iC = αiE 35 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Ebers-moll Equivalent-circuit model iDE = I SE (e VBE iDC = I SC (e VT VBC VT − 1) − 1) 36 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt Saturation Equivalent-circuit model VBE = 0.7 ~ 0.8V VCE = 0.1 ~ 0.2V VBC = 0.5 ~ 0.6V 37 Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com https://fb.com/tailieudientucntt ... Instruments in 19 54 The first MOS transistor actually built was by Kahng and Atalla at Bell Labs in 1960 •1971 : 40 04 : 300 transistors •1978 : 8086 : 29 000 transistors •1982 : 80286 275 000 transistors. .. transistors •1989 : 8 048 6 : 1,16 millions de transistors •1993 : Pentium : 3,1 millions de transistors •1995 : Pentium Pro : 5,5 millions de transistors •1997 : Pentium II : 27 Millions de transistors. .. •1997 : Pentium II : 27 Millions de transistors •2001 : Pentium : 42 millions de transistors •20 04 : Pentium EE : 169 millions de transistors Microelectronic Circuit by meiling CHEN CuuDuongThanCong.com