microelectronics circuit analysis and design donald a neamem

Bài 1.Linh kiện điện tử cơ bản 3 1.Điện trở 3 2.Biến trở 5 3.Tụ điện 5 3.1.Phân loại 6 3.2.Tụ hoá 7 4.Diode 7 4.1.Mô tả 5 4.2.Kí hiệu các loại diode 5 5.Transistor 8 5.1.Tác dụng 9 6.Led 7 thanh 9 7.Bộ cách ly quang 11 7.1.Ứng dụng 11 7.2.Nguyên lý cấu tạo chung của bộ cách ly 11 7.3.Phân loại 11 7.4.Hình vẽ nguyên lý 11 8.Relay 13 8.1.Phân loại 13 8.2.Điều khiển đóng mở relay 13 B Bài thực hành số 1 14 1.Công cụ 14 2.Hướng dẫn sử dụng panel 14 Bài 2:Các IC tích hợp chuyên dụng 16 2.1.Mạch nguồn 16 2.2.Các mạch số logic 19 2.3.IC lập trình được 19 Bài 3:Thiết kế mạch nguyên lý bằng PROTEL 24 3.1.Tổng quan 25

An accessible approach to learning through clear writing and practical pedagogy has become the hallmark of Microelectronics: Circuit Analysis and Design by Donald Neamen Now in its fourth edition, the text builds upon its strong pedagogy and tools for student assessment with key updates as well as revisions that allow for flexible coverage of op-amps FOURTH E DITION FOURTH EDITI ON Key Features of the Fourth Edition Flexible Presentation of Key Topics Revisions have given the text a level of flexibility such that ideal op-amps (Chapter 9) can be presented as the first topic in electronics; either MOS or Bipolar transistors can be studied as the first transistor type; and digital electronics can be covered before analog electronics This flexibility allows instructors to present topics in whatever order makes the most sense for their students The fourth edition features a substantial number of new problems This includes: over 45 percent new exercise and Test Your Understanding problems; over 45 percent new end-of-chapter problems; and over 70 percent new open-ended design problems and computer simulation problems In addition, coverage of circuit voltage levels and device parameters was updated to more closely match real world electronics Goal-Oriented Pedagogy A Preview section introduces each chapter and correlates with learning objectives that head each section Worked examples reinforce the theoretical concepts being developed; all examples are followed by exercises to immediately test learning Test Your Understanding problems are integrated at the end of each section to provide additional practice Problem solving techniques guide students Focus on Design in the Real World Students are taught good design by incorporating design exercises that help students get a feel for how the design process works in the real world Each chapter includes a Design Application that leads students through the design and development of an electronic thermometer The various characteristics and properties of circuits are explained as the student moves through the analysis Design Pointers appear in examples and throughout the text to help students with tricky design issues, and Design Problems are featured in most problem sets Computer Tools Because computer analysis and computer-aided design are significant factors in professional electronic design, the text contains a large number of new computer simulation problems These appear both throughout the chapter and at the end of each chapter Learning and Teaching Technologies The website for Microeletronics features tools for students and teachers Professors can benefit from McGraw-Hill’s COSMOS electronic solutions manual COSMOS enables instructors to generate a limitless supply of problem material for assignment, as well as transfer and integrate their own problems into the software In addition, the website boasts PowerPoint slides, an image library, the complete Instructor’s Solution Manual (password protected), data sheets, laboratory manual, and links to other important websites You can find the site at www.mhhe.com/neamen CIRCUIT ANALYSIS AND DESIGN MD DALIM #1035984 7/12/09 CYAN MAG YELO BLK through analyzing and solving a problem CIRCUIT ANALYSIS AND DESIGN New Problems and Text Updates NEAM EN DO N A LD A N E A M EN nea80644_fm_i-xxii.qxd 08/04/2009 08:20 PM Page i F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-FM: Microelectronics: Circuit Analysis and Design nea80644_fm_i-xxii.qxd 08/04/2009 08:20 PM Page ii F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-FM: nea80644_fm_i-xxii.qxd 08/06/2009 11:45 PM Page iii F506 Hard disk:Desktop Folder:TEMPWORK: Microelectronics: Circuit Analysis and Design Fourth Edition Donald A Neamen University of New Mexico nea80644_fm_i-xxii.qxd 08/04/2009 08:21 PM Page iv F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-FM: MICROELECTRONICS: CIRCUIT ANALYSIS AND DESIGN, FOURTH EDITION Published by McGraw-Hill, a business unit of The McGraw-Hill Companies, Inc., 1221 Avenue of the Americas, New York, NY 10020 Copyright © 2010 by The McGraw-Hill Companies, Inc All rights reserved Previous editions © 2007, 2001, and 1996 No part of this publication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system, without the prior written consent of The McGraw-Hill Companies, Inc., including, but not limited to, in any network or other electronic storage or transmission, or broadcast for distance learning Some ancillaries, including electronic and print components, may not be available to customers outside the United States This book is printed on acid-free paper VNH/VNH ISBN 978–0–07–338064–3 MHID 0–07–338064–4 Global Publisher: Raghothaman Srinivasan Director of Development: Kristine Tibbetts Developmental Editor: Lora Neyens Senior Marketing Manager: Curt Reynolds Project Manager: Melissa M Leick Senior Production Supervisor: Sherry L Kane Senior Media Project Manager: Jodi K Banowetz Design Coordinator: Brenda A Rolwes Cover Designer: Studio Montage, St Louis, Missouri Compositor: Aptara®, Inc Typeface: 10/12 Times Roman Printer: R R Donnelley Jefferson City MO All credits appearing on page or at the end of the book are considered to be an extension of the copyright page Library of Congress Cataloging-in-Publication Data Neamen, Donald A Microelectronics : circuit analysis and design / Donald A Neamen — 4th ed p cm Includes index ISBN 978-0-07-338064-3—ISBN 0-07-338064-4 (alk paper) Electronic circuit design Semiconductors—Design and construction Electronic circuit design I Title TK7867.N412 2010 621.381 — dc22 www.mhhe.com 2009014106 nea80644_fm_i-xxii.qxd 08/04/2009 08:21 PM Page v F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-FM: Dedication To the many students I’ve had the privilege of teaching over the years who have contributed in many ways to the broad field of electrical engineering, and to future students who will contribute in ways we cannot now imagine v nea80644_fm_i-xxii.qxd 08/04/2009 08:21 PM Page vi F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-FM: About the Author Donald A Neamen is a professor emeritus in the Department of Electrical and Computer Engineering at the University of New Mexico where he taught for more than 25 years He received his Ph.D degree from the University of New Mexico and then became an electronics engineer at the Solid State Sciences Laboratory at Hanscom Air Force Base In 1976, he joined the faculty in the ECE department at the University of New Mexico, where he specialized in teaching semiconductor physics and devices courses and electronic circuits courses He is still a part-time instructor in the department He also just recently taught for a semester at the University of Michigan–Shanghai Jiao Tong University (UM-SJTU) Joint Institute in Shanghai In 1980, Professor Neamen received the Outstanding Teacher Award for the University of New Mexico In 1990, and each year from 1994 through 2001, he received the Faculty Recognition Award, presented by graduating ECE students He was also honored with the Teaching Excellence Award in the College of Engineering in 1994 In addition to his teaching, Professor Neamen served as Associate Chair of the ECE department for several years and has also worked in industry with Martin Marietta, Sandia National Laboratories, and Raytheon Company He has published many papers and is the author of Semiconductor Physics and Devices: Basic Principles, third edition and An Introduction to Semiconductor Devices vi nea80644_fm_i-xxii.qxd 08/04/2009 08:21 PM Page vii F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-FM: Brief Table of Contents PROLOGUE I PROLOGUE TO ELECTRONICS PART SEMICONDUCTOR DEVICES AND BASIC APPLICATIONS Chapter Semiconductor Materials and Diodes Chapter Diode Circuits 67 Chapter The Field-Effect Transistor 125 Chapter Basic FET Amplifiers 205 Chapter The Bipolar Junction Transistor 285 Chapter Basic BJT Amplifiers 369 Chapter Frequency Response 469 Chapter Output Stages and Power Amplifiers 559 PROLOGUE II PROLOGUE TO ELECTRONIC DESIGN 615 PART ANALOG ELECTRONICS 619 Chapter Ideal Operational Amplifiers and Op-Amp Circuits 621 Chapter 10 Integrated Circuit Biasing and Active Loads 687 vii nea80644_fm_i-xxii.qxd 08/04/2009 08:21 PM Page viii F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-FM: viii Brief Table of Contents Chapter 11 Differential and Multistage Amplifiers 753 Chapter 12 Feedback and Stability 851 Chapter 13 Operational Amplifier Circuits 947 Chapter 14 Nonideal Effects in Operational Amplifier Circuits 1009 Chapter 15 Applications and Design of Integrated Circuits 1061 PROLOGUE III PROLOGUE TO DIGITAL ELECTRONICS 1141 PART DIGITAL ELECTRONICS 1145 Chapter 16 MOSFET Digital Circuits 1147 Chapter 17 Bipolar Digital Circuits 1255 Appendix A Physical Constants and Conversion Factors 1315 Appendix B Selected Manufacturers’ Data Sheets 1317 Appendix C Standard Resistor and Capacitor Values 1329 Appendix D Reading List 1333 Appendix E Answers to Selected Problems 1337 Index 1359 nea80644_fm_i-xxii.qxd 08/04/2009 08:21 PM Page ix F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-FM: Contents PROLOGUE I PROLOGUE TO ELECTRONICS Brief History Passive and Active Devices Electronic Circuits Discrete and Integrated Circuits Analog and Digital Signals Notation Summary PART SEMICONDUCTOR DEVICES AND BASIC APPLICATIONS Chapter Semiconductor Materials and Diodes 1.1 1.2 1.3 1.4 1.5 1.6 1.7 Preview Semiconductor Materials and Properties 10 The pn Junction 23 Diode Circuits: DC Analysis and Models 34 Diode Circuits: AC Equivalent Circuit 43 Other Diode Types 48 Design Application: Diode Thermometer 54 Summary 56 Problems 57 Chapter Diode Circuits 67 Preview 67 2.1 Rectifier Circuits 68 2.2 Zener Diode Circuits 84 2.3 Clipper and Clamper Circuits 90 2.4 Multiple-Diode Circuits 97 2.5 Photodiode and LED Circuits 106 2.6 Design Application: DC Power Supply 108 2.7 Summary 110 Problems 111 Chapter The Field-Effect Transistor 125 Preview 125 3.1 MOS Field-Effect Transistor 126 3.2 MOSFET DC Circuit Analysis 146 ix nea80644_appE_1337-1358.qxd 1358 Appendix E 8/6/09 10:10 AM Page 1358 pmath DATA-DISK:Desktop Folder:UDAYVEER/Neamen: Answers to Selected Problems (c) RC2 = 5.05 (d) P = 1.60 mW 17.15 (a) i = 1.4 mA, i = 0.8 mA, i = 0.14 mA, i = 0.14 mA, i D = 0.74 mA, v O = −0.4 V (b) i = 1.4 mA, i = 0.153 mA, i = 0.153 mA, i = 0.153 mA, i D = 0, v O = −0.0765 V (c) i = 1.6 mA, i = 0.14 mA, i = 0.14 mA, i = 0.14 mA, i D = 0, v O = −0.07 V (d) i = 1.6 mA, i = 0.8 mA, i = 0.153 mA, i = 0.153 mA, i D = 0.953 mA, v O = −0.4 V 17.17 (a) Logic = −0.4 V Logic = (b) v O1 = A + B, v O2 = C + D, v O3 = (A + B) · (C + D) 17.19 (a) (i) v1 = 0.8 V, v O = 2.5 V, i = 0.141 mA, i = i = (ii) v1 = 1.5 V, v O = 0.1 V, i = i = 0.0833 mA, i = 0.2 mA (b) (i) v1 = 1.4 V, v I = 0.7 V (ii) v1 = 1.5 V, v I = 0.8 V 17.21 (i) v = 0.8 V, i = 0.525 mA, i3 = i4 = (ii) v = 2.2 V, i = 0.35 mA, i = 2.04 mA, i = 0.297 mA 17.23 (a) v1 = 2.3 V, v O = 0.1 V, i = 0.675 mA, i = 1.7 mA, i = 1.225 mA, i = 2.375 mA, i = 0.08 mA, i B2 = 2.295 mA (b) N = 42 17.25 i = 1.53 mA, i = 0.0589 mA, i = 1.47 mA, i Bo = 1.37 mA, i Co = 0.817 mA 17.27 (a) (i) v1 = 0.9 V, v O = 2.5 V, i = 0.1333 mA, i = i = (ii) v1 = 1.5 V, v O = 0.1 V, i = 0.0833 mA, i = 0.09167 mA, i = 0.20 mA (b) (i) v1 = 1.4 V, v I = 0.6 V (ii) v1 = 1.5 V, v I = 0.7 V 17.29 (a) (i) v = 0.8 V, i = 0.156 mA, i3 = i4 = (b) (c) 17.31 (a) (b) 17.33 (a) (b) 17.35 (a) (b) 17.37 (a) (b) (c) 17.39 (a) (b) (c) (d) 17.41 (a) (b) (c) 17.43 (a) (b) (c) (ii) v = 2.2 V, i = 0.06875 mA, i = 0.5333 mA, i = 0.02875 mA N =5 N =5 (i) i R B = 1.025 mA, i RC P = i Bo = 0, Vout = V (ii) i R B = 0.70 mA, i RC P = 4.2 mA, i Bo = 0.0837 mA, Vout = 0.8 V (i) P = 5.145 mW (ii) P = 25.4 mW (i) v O = 3.6 V, (ii) v O = 3.404 V, (iii) v O = 1.11 V I L = 34.05 mA i B1 = 1.5 mA, i B2 = 0, i B3 = 0.4 mA, i C2 = 0, i C3 = 0.5 mA i B1 = 0.5 mA, i B2 = 0.8 mA, i B3 = 0, i C2 = 7.5 mA, i C3 = (i) v1 = 0.3 V, v O = 1.5 V, i = 1.2 mA, i B = i C = (ii) v1 = 1.0 V, v O = 0.4 V, i = 0.5 mA, i B = 0.465 mA, i C = 0.9167 mA (i) v1 = 1.0 V, v I = 0.7 V, i B = iC = (ii) v1 = 1.0 V, v I = 0.7 V, i B = 0.03667 mA, i C = 0.9167 mA N = 13 R B1 = 18 k , RC1 = 1.63 k v B1 = 0.7 V, v B2 = 0, v O ∼ = 1.8 V, i B = iC = v B1 = 1.5 V, v B2 = 0.7 V, v O = 0.4 V, i B1 = 0.0555 mA, i C1 = 1.043 mA, i B2 = 0.10 mA, i C2 = 0.40 mA N = 20 P = 0.4875 mW P = 1.98 mW i SC ∼ = 78 mA i D N = 0.1 mA, i D P = 0.289 mA, i C1 = 14.45 mA, i C2 = mA t = 5.19 ns t = 260 ns nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1359 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: Index A A/D converter, 1226, 1229–1232 ac circuit analysis, 44 ac collector current, 373 ac collector-emitter voltage, 373 ac common-emitter current gain, 380 ac equivalent circuit, 377–378 ac load line, 413–414 ac load line analysis, 413–420 ac ripple voltage, 68n ac signal, 372 Acceptor impurity, 15 Active bandpass filter, 1122–1125 Active device, Active filter, 1062–1074 active network design, 1062–1063 advantages, 1062 defined, 1062 general two-pole, 1064 higher-order Butterworth filter, 1068–1070 switched-capacitor filter, 1070–1074 two-pole high-pass Butterworth filter, 1068 two-pole low-pass Butterworth filter, 1065–1067 Active load, 238, 411, 687 See also Integrated circuit biasing and active loads, 790 Active load device, 720 Active region, 287 Address decoder, 1211–1212 Admittance, 47 Advanced common-emitter amplifier concepts, 411–412 Advanced low-power Schottky (ALS) inverter gate, 1295 Advanced Schottky TTL circuits, 1295–1296 Airplane, 616 All-CMOS folded cascode op-amp circuit, 1012 ALS inverter gate, 1295 Alterable ROM, 1209 Alternative ECL gates, 1270–1273 Aluminum arsenide, 10 Aluminum phosphide, 10 AM signal, 82 Amplification factor, 854 Amplifier antilog, 656 BJT See Basic BJT amplifier BJT application, as, 327–330 bridge power, 1113 CMOS common-gate, 251–253, 251–254 CMOS common-source, 247–249 CMOS source-follower, 249–251 common-base, 431–435 common-collector, 420–431 common-drain, 227–233 common-emitter, 398–412 common-gate, 234–237 common-source, 216–226 current, 397 diff-amp See Differential and multistage amplifiers difference, 645–649 emitter-follower, 420–431 error, 1116, 1120 exponential, 656 feedback, 854 FET See Basic FET amplifier generalized three-stage, 436 IC power, 1107–1113 inductively coupled, 587–588 instrumentation, 650–651 inverting, 627–635 JFET, 258–263 LM380, 1108–1111 log, 655 MOSFET, 206–216 MOSFET integrated circuit, 155 MOSFET small-signal, 168–169 multistage, 254–258, 436–442 See Differential and multistage amplifiers NMOS-active loads, 247–254 NMOS depletion load, 244–247 NMOS enhancement load, 239–244 noninverting, 638–639 op-amp See Ideal op-amp OTA, 657–658 PA12, 1111–1113 power See Output stages and power amplifiers series-shunt, 873–879 single-stage integrated circuit MOSFET, 238–254 summing, 636–638 transconductance, 397, 870 transformer-coupled common-emitter, 588–589 transformer/coupled emitter-follower, 589–591 transresistance, 397, 872 two-stage, 264–266 voltage, 397, 873–879 Amplifier frequency response, 470–472 Amplitude-modulated input signal, 82 Amplitude-modulated signal, 82 Analog circuit, 3, 206, 370 Analog electronics, 619 Analog signal, 3, 206, 370 Analog-to-digital (A/D) converter, 1226, 1229–1232 AND logic circuit, 105 Answers to selected problems, 1337–1358 Antilog amplifier, 656 Applications and design of integrated circuits, 1061–1140 active filter See Active filter design application (active bandpass filter), 1122–1125 555 circuit, 1100–1107 IC power amplifiers See Integrated circuit power amplifiers nonsinusoidal oscillators/timing circuits See Nonsinusoidal oscillators/timing circuits oscillator See Oscillator Schmitt trigger circuit See Schmitt trigger circuit Approximate class-B circuit, 577 Aspect ratio, 708 Astable multivibrator, 1096, 1105–1107 Astable multivibrator 555 circuit, 1105 Attenuation, 640 Audio amplifier, 445–449 Avalanche breakdown, 31 Avalanche multiplication process, 31 Average power dissipation, 580 B B-C junction, 287 B-E junction, 287 Back-gate transconductance, 215 Back-to-back Zener diodes, 1094 Band-reject filter, 1063 Bandgap energy, 12 Bandpass filter, 1063 Bandwidth, 481 Bandwidth extension, 857–859 Bardeen, John, Barkhausen criterion, 1075 Base, 286 Base-collector (B-C) junction, 287 Base-collector voltage, 1259 Base-emitter (B-E) junction, 287 Base-emitter loop, 377 Basic BiCMOS differential amplifier, 805 Basic BiCMOS inverter, 1297 Basic bipolar diff-amp with active load, 1033 Basic bipolar difference amplifier, 1031 Basic BJT amplifier, 369–468 ac load line analysis, 413–420 bipolar linear amplifier See Bipolar linear amplifier common-base amplifier, 431–435 common-collector amplifier See Commoncollector amplifier common-emitter amplifier See Commonemitter amplifier design application (audio amplifier), 445–449 maximum symmetrical swing, 415–420 multistage amplifier See Multistage BJT amplifier power considerations, 442–445 Basic BJT differential pair, 754–779 CMRR, 765–768 common-mode input resistance, 775 dc transfer characteristics, 758–762 differential-/common-mode gains, 771–774 differential-mode input resistance, 774–775 1359 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1360 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: 1360 Index Basic BJT differential pair—(Cont.) differential-mode voltage gain with emitter degeneration, 777–778 gm mismatch, 770 one-sided output, 763–765 Rc mismatch, 769–770 small-signal equivalent circuit analysis, 762–765 two-sided output, 761, 769–770 Basic BJT differential-pair configuration, 755 Basic common-base circuit, 431 Basic common-emitter amplifier circuit, 399–400 Basic common-emitter differential pair, 952 Basic common-source configuration, 217–222 Basic complementary push-pull output stage, 577 Basic differential amplifier circuit, 1256 Basic diode-transistor logic gate, 1277–1279 Basic DTL NAND circuit operation, 1277–1279 Basic ECL logic gate, 1258–1259 Basic feedback concepts, 853–862 Basic FET amplifier, 205–284 common-drain amplifier, 227–233, 238 common-gate amplifier, 234–237, 238 common-source amplifier, 216–226 design application (two-stage amplifier), 264–266 JFET amplifier, 258–263 MOSFET amplifier, 206–216 multistage amplifier, 254–258 single-stage IC amplifier See Single-stage integrated circuit MOSFET amplifier source-follower amplifier, 227–233, 238 Basic FET differential pair, 779–790 dc transfer characteristics, 779–784 differential-/common-mode input impedances, 784 gm mismatch, 788 JFET differential amplifier, 788–789 RD mismatch, 787–788 small-signal equivalent circuit analysis, 784–787 two-sided output, 787–788 Basic inverting Schmitt trigger, 1087–1090 Basic MOSFET differential pair configuration, 779 Basic random access memory architecture, 1210 Basic series-pass voltage regulator, 84, 1116 Basic three-transistor current source, 693–696 Basic transistor applications, 323–330 Basic TTL gate, 1280 Basic TTL NAND circuit, 1282–1284 Basic two-input ECL OR/NOR logic circuit, 1258 Basic two-transistor current source, 688 Basic two-transistor MOSFET current source current relationship, 707–708 output resistance, 708–709 reference current, 709–710 Basic two-transistor NMOS current source, 707 Battery charger, 70 Beta cutoff frequency, 505 Bias bipolar transistor biasing See Bipolar transistor biasing BJT See Bipolar transistor biasing constant-current, 170–175 constant-current biasing, 170–175 diode biasing, 592–594 forward, 27 IC See Integrated circuit biasing and active loads integrated circuit biasing, 342–343 linear amplifying device, 688 positive and negative biasing, 339–341 reverse, 25 single base resistor biasing, 331–333 VBE multiplier, 594–596 voltage divider biasing, 333–339 Bias current compensation, 1043–1044 Bias current effects, 1042–1043 Bias-independent current source, 715–716 Bias-independent MOSFET current mirror, 715 Bias resistor, 590 Bias stable, 336 Bibliography See Reading list BiCMOS circuits, 801–805 basic amplifier stages, 801–803 BiCMOS diff-amp, 804, 805 current sources, 803–804 BiCMOS Darlington pair configuration, 802 BiCMOS diff-amp, 804, 805 BiCMOS digital circuits, 1296–1298 BiCMOS double cascode constant-current source, 803 BiCMOS folded cascode amplifier, 982 BiCMOS folded cascode op-amp, 982–983 BiCMOS inverter, 1296–1297 BiCMOS logic circuit, 1297–1298 BiCMOS operational amplifier circuits, 981–989 BiCMOS folded cascode op-amp, 982–983 CA3140 BiCMOS circuit description, 983–984 CA3140 dc analysis, 984–986 CA3140 small-signal analysis, 986–989 BiCMOS technology, 801 Bipolar ac analysis, 384 Bipolar cascode constant-current source, 803 Bipolar cascode current mirror, 696 Bipolar class-AB output stage, 582 Bipolar common-emitter circuit, 719 Bipolar Darlington pair configuration, 802 Bipolar digital circuits, 1255–1314 BiCMOS digital circuits, 1296–1298 design application (static ECL gate), 1298–1299 ECL See Emitter-coupled logic (ECL) modified ECL circuit configurations, 1267–1276 Schottky TTL See Schottky transistortransistor logic TTL See Transistor-transistor logic Bipolar fuse-linked user-programmable ROM, 1223 Bipolar inverter circuit, 326 Bipolar junction transistor (BJT), 285–367 amplifier, 327–330 See Basic BJT amplifier asymmetry, 287 basic applications, 323–330 basic transistor principle, 286 bias See Bipolar transistor biasing breakdown voltage, 299–301 circuit symptoms/conventions, 293–295 common-emitter circuit, 302–306 common used bipolar circuits, 313–322 cross section, 287 current-voltage characteristics, 295–297 current-voltage relationship, 294 dc analysis, 301–322 design application (diode thermometer with bipolar transistor), 348–350 digital logic, 325–327 doped region, 286 frequency response, 502–514 leakage currents, 298–299 load line, 306–307 modes of operation, 307–310, 350 multistage circuits, 344–348 npn transistor See npn bipolar transistor pn junction, 286 pnp transistor, 292–293 power, 561–565 simple geometry, 286 small-signal two-port network, as, 378 switch, 323–325 voltage transfer characteristics, 310–313 Bipolar linear amplifier, 371–396 ac equivalent circuit, 377–378 alternative form of equivalent circuit, 380 base-emitter loop, 377 bipolar transistor inverter circuit, 371 collector-emitter loop, 377 common-emitter current gain, 381 data sheet, 393–396 graphical analysis, 372–378 h-parameters, 390–392 harmonic distortion, 375–376 hybrid-π equivalent circuit, 380 hybrid-π equivalent circuit (Early effect), 385–389 input base-emitter port, 378–379 other small-signal parameters/equivalent circuits, 390–396 small signal, 374–375 small-signal hybrid-π equivalent circuit, 378–381 small-signal voltage gain, 381–384 T-model, 396 Bipolar NOR logic circuit response, 326 Bipolar NOR logic gate, 326 Bipolar operational amplifier circuit, 812, 950–970 bias circuit and input stage, 954–956 circuit description, 950–953 dc analysis, 953–960 frequency response, 968–969 gain stage, 952–953, 956–957, 963–966 input diff-amp, 951–952 input stage, 961–963 output resistance, 966–968 output stage, 953, 958–960 overall gain, 966 short-circuit protection circuitry, 960 small-signal analysis, 961–968 Bipolar transistor biasing, 330 bias stability, 333–339 integrated circuit biasing, 342–343 positive and negative biasing, 339–341 single base resistor biasing, 331–333 voltage divider biasing, 333–339 Bipolar transistor current sources, 688–707 basic three-transistor current source, 693–696 cascode current source, 696–697 improved current-source circuits, 693–698 multitransistor current mirror, 704–706 two-transistor current source, 688–693 Widlar current source, 698–704 Wilson current source, 697–698 Bipolar transistor inverter circuit, 371 Bistable multivibrator, 1087 BJT amplifier See Basic BJT amplifier BJT current source circuits, 698 BJT diff-amp with active load, 791–792 BJT diff-amp with three-transistor active load, 806 BJT differential amplifier with three-transistor active load, 792 BJT Hartley oscillator, 1083 BJT op-amp circuit, 811–815 BJT small-signal equivalent circuit, 380 Black, Harold, 852 Bode, H., 474 Bode plot, 474–479 Bode plot of gain magnitude, 492 Body effect, 143–144, 1160–1162 Body-effect parameter, 144 Bottom-up design process, 616 Brattain, Walter, Break-point frequency, 475 Breakdown, 31 Breakdown effect, 144–145 Breakdown voltage, 30–32, 52, 299–301 Bridge circuit, 663, 664 Bridge power amplifier, 1113 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1361 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: Index Bridge rectifier, 72 Built-in potential barrier, 24 Butterworth filter defined, 1065 four-pole, 1069 higher-order, 1068–1070 N-th order, 1069 three-pole, 1069 two-pole high-pass, 1068 two-pole low-pass, 1065–1067 Butterworth Nth-order high-pass filter, 1068–1070 Butterworth Nth-order low-pass filter, 1068–1070 Bypass capacitor effects, 496–499 C CA3140 BiCMOS circuit description, 983–984 CA3140 BiCMOS data, 984 CA3140 BiCMOS op-amp equivalent circuit, 983 CA3140 dc analysis, 984–986 CA3140 small-signal analysis frequency response, 988–989 gain stage, 987 input stage, 986–987 overall gain, 988 Capacitance depletion layer, 26 diffusion, 46 equivalent input gate, 519 equivalent Miller, 816 junction, 26 Miller, 510–512, 518–520 overlap, 515 parasitic, 515 Capacitance of parallel plate capacitor, 126n Capacitor, 1331 compensation, 922 coupling, 331, 399 emitter bypass, 496 filter, 76 input coupling, 485–488 MOS, 127, 128 output coupling, 488–490, 490–492 source bypass, 224–226 Capacitor charging current, 78 Capacitor impedance, 217, 399 Capacitor values See Standard resistor and capacitor values Carbon resistors, 1329–1330 Carrier, 17 Carrier velocity saturation, 1150 Cascade, 175, 436 Cascade circuit (multistage amplifier), 254–256 Cascade configuration multistage BJT analysis, 436–438 multitransistor circuit, 176–177 Cascaded clocked CMOS logic circuit, 1193 Cascaded-stage amplifiers See Differential and multistage amplifiers Cascode, 178 Cascode circuit (multistage amplifier), 256–257 Cascode configuration multistage BJT analysis, 440–442 multitransistor circuit, 178–179 Cascode current mirror, 711–713 Cascode current source, 696–697 Channel inversion charge, 515 Channel length modulation, 142, 1150 Channel-length modulation, 515 Channel length modulation factor, 1169 Channel-length modulation parameter, 142 Channel region, 128 Chip select signal, 1210 Circuit ac equivalent, 377–378 active load, 719–726 analog, 206, 370 BiCMOS, 801–805 bipolar digital See Bipolar digital circuits bipolar transistor inverter, 371 BJT current-source, 698 clamper, 94–97 clipper, 91–94 CMOS full-adder, 1207–1208 CMOS op-amp, 970–981 common-base, 431 common-drain, 227 common-emitter, 302–306 common-emitter amplifier, 399 common-gate, 234 common-source, 146–153 comparator, 1086 diode See Diode circuit diode logic, 104–105 emitter-follower, 421 equivalent preamplifier, 398 expanded hybrid-π equivalent, 502–503 555, 1100–1107 high-frequency equivalent, 514–516 hybrid-π equivalent, 380 LED, 107–108 MOSFET current-source, 711 MOSFET digital See MOSFET digital circuits MOSFET high-frequency, 519 multi-MOSFET current-source, 711–715 multiple-diode, 97–105 multistage MOSFET, 175–179 Norton equivalent, 396 one-bit full-adder, 1207–1208 op-amp See Operational amplifier circuits op-amp voltage reference, 661 phase-shift oscillator, 1078 photodiode, 106 piezoelectric crystal equivalent, 1083 precision half-wave rectifier, 654 rectifier See Rectifier circuit reference, 1260–1262 Schmitt trigger, 1084–1095 simplified BJT op-amp, 811–815 small-signal equivalent, 210–214, 378, 380, 399 SRAM read/write, 1218–1220 summing op-amp, 636 switched-capacitor, 1072 Thevenin equivalent, 333, 396 two-port equivalent, 403 voltage doubler, 83–84 voltage-follower op-amp, 640 Circuit element matching, 950 Circuit load line, 37 Circuits with active loads, 719–726 dc analysis - BJT active load circuit, 720–722 dc analysis - MOSFET active load circuit, 724–725 discussion, 726 voltage gain - BJT active load circuit, 722–724 voltage gain - MOSFET active load circuit, 725 Clamper, 94–97 Clamper circuit, 94–97 Clamping, 94 Class-A operation, 572–576 Class-A power amplifier, 586–591 inductively coupled amplifier, 587–588 transformer-coupled common-emitter amplifier, 588–589 transformer-coupled emitter-follower amplifier, 589–591 Class-AB operation, 581–585 Class-AB output stage, 581 Class-AB push-pull complementary output stages, 591–601 1361 biasing (VBE multiplier), 594–596 Darlington configuration, 599–600 diode biasing, 592–594 input buffer transistors, 596–599 Class-B operation, 576–581 approximate class-B circuit, 577 crossover distortion, 577–578 idealized, 576–577 idealized power efficiency, 579–581 Class-C operation, 585–586 Classical cascode stage, 976 Clipper, 91–94 Clipper circuit, 91–94 Clock, 1105 Clock frequency, 1071 Clocked CMOS logic circuits, 1191–1193 Closed-loop feedback system, 1116 Closed-loop frequency response, 920–922 Closed-loop voltage gain, 625, 628, 634, 864 CMOS, 140–141 CMOS cascode current-mirror op-amp, 980 CMOS cascode current-mirror op-amp circuit, 980–981 CMOS common-gate amplifier, 251–254 CMOS common-source amplifier, 247–249 CMOS current-mirror op-amp, 979 CMOS current-mirror op-amp circuit, 979–980 CMOS D-type flip-flop, 1206 CMOS diff-amp, 821–824 CMOS differential sense amplifier, 1219 CMOS dynamic shift register, 1204 CMOS folded cascode amplifier, 977 CMOS full-adder circuit, 1207–1208 CMOS inverter, 163–164, 1168–1182 dc analysis, 1170–1176 noise margin, 1178–1182 p-channel MOSFET, 1168 power dissipation, 1176–1178 transistor sizing, 1175–1176, 1184–1185 voltage transfer curve, 1171–1175 CMOS inverter current, 1175–1176 CMOS logic circuits, 1183–1191 basic CMOS NOR and NAND gates, 1183 clocked, 1191–1193 complex, 1187–1190 fanout, 1190 propagation delay time, 1191 transistor sizing, 1184–1187 CMOS master-slave D flip-flop, 1207 CMOS NAND logic gate, 1184 CMOS NOR gate, 1183, 1186 CMOS one-bit full adder, 1208 CMOS operational amplifier circuits, 970–981 CMOS cascode current-mirror op-amp circuit, 980–981 CMOS current-mirror op-amp circuit, 979–980 folded cascode CMOS op-amp circuit, 976–979 MC14573 CMOS op-amp circuit, 970–973 three-stage CMOS op-amp, 973–976 CMOS pass networks, 1202 CMOS R-S flip-flop, 1205 CMOS source-follower amplifier, 249–251 CMOS SRAM cells, 1214–1217 CMOS static exclusive-OR logic gate, 1189 CMOS static RAM cell, 1215 CMOS transmission gate, 1200–1201 CMRR, 648, 765–768, 1046–1047 Collector, 286 Collector-emitter loop, 377 Collector-emitter voltage, 1259 Colpitts oscillator, 1082–1083 Common-anode display, 107 Common-base amplifier, 431–435 Common-base circuit, 431, 525 Common-base circuit configuration, 295 Common-base current gain, 289 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1362 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: 1362 Index Common-collector amplifier, 420–431 input/output impedance, 423–426 other basic amplifiers, compared, 435–436 small-signal current gain, 426–431 small-signal voltage gain, 420–423 Common-drain amplifier, 227–233, 238 Common-drain circuit, 227 Common-emitter amplifier, 398–412, 573 advanced common-emitter amplifier concepts, 411–412 basic amplifier circuit, 399–400 circuit with emitter bypass capacitor, 407–410 circuit with emitter resistor, 400–407 other basic amplifiers, compared, 435–436 Common-emitter bipolar transistor, 391 Common-emitter circuit, 294, 302–306, 373 Common-emitter configuration, 290 Common-emitter current gain, 290–291, 381 Common-emitter h-parameter, 390 Common-emitter npn bipolar transistor, 502 Common-emitter npn transistor, 391 Common-gate amplifier, 234–237, 238 Common-gate circuit, 234 Common-mode gain, 648 Common-mode gain frequency response, 818 Common-mode input resistance, 775 Common-mode input signal, 623, 648 Common-mode input voltage, 648, 754 Common-mode rejection, 623 Common-mode rejection ratio (CMRR), 648, 765–768, 1046–1047 Common-source amplifier, 216–226 basic configuration, 217–222 source bypass capacitor, 224–226 source resistor, 222–224 summary, 238 Common-source amplifier with source resistor, 222–224 Common-source circuit with source bypass capacitor, 224–226 Common-source NMOS transistor circuit, 220 Comparator, 1084–1087 inverting comparator circuit, 1086 noninverting comparator circuit, 1086 open-loop comparator circuit, 1087 threshold, 1101 trigger, 1103 Compensation capacitor, 922 Complementary MOS (CMOS), 140–141 Complementary MOS (CMOS) inverter, 163–164 Complementary MOSFET, 140–141 Complementary push-pull output stage, 577 Complete amplifier system, 664 Complex CMOS logic circuit, 1187 Complex frequency s, 472 Composite transconductance, 802 Compound semiconductor, 10 Computer memory, 1208–1225 address decoder, 1211–1212 CMOS SRAM cells, 1214–1217 DRAM cells, 1220–1221 memory architecture, 1210 NMOS SRAM cells, 1212–1214 RAM, 1209, 1212–1221 ROM, 1209–1210, 1221–1225 SRAM read/write circuitry, 1218–1220 Conduction parameter, 133, 1169 Conductivity, 18 Constant-current biasing, 170–175 Constant-current source, 289, 687, 688 Conversion efficiency, 581 Conversion factors, 1315 Corner frequency, 475, 481, 487 Counting A/D converter, 1230–1231 Coupling capacitor, 331, 399 Coupling capacitor effects, 485–492 Covalent bond, 11 Cross-coupled NMOS sense amplifier, 1219 Crossover distortion, 577–578, 949 Crystal matrix, 11 Crystal oscillator, 1083–1084 Current amplifier, 397 Current buffer, 434 Current divider, 486 Current mirror, 170, 688 Current (shunt-series) amplifier, 879–886 discrete circuit representation, 882–886 op-amp circuit representation, 880–881 simple discrete circuit representation, 881–882 Current-to-voltage converter, 641–642 Current transfer function, 472 Cut-in voltage, 38 Cutoff, 291 Cutoff frequency, 506–507, 519 Cyclical frequency, 470n D D/A converter, 1226, 1227–1229 D flip-flop, 1206–1207 Darlington configuration, 439, 599–600 Darlington pair configuration, 439–440, 801 Darlington pair gain stage, 806 Data converter, 1226–1232 A/D converter, 1229–1232 basic A/D and D/A concepts, 1226–1227 counting A/D converter, 1230–1231 D/A converter, 1227–1229 dual-slope A/D converter, 1231–1232 flash A/D converter, 1229–1230 R-2R ladder network D/A converter, 1228–1229 weighted-resistor 4-bit D/A converter, 1227–1228 Data sheets, 393–396 See also Selected manufacturers’ data sheets dc load line, 413, 573 dc power supply, 108–110 dc quantity, 4, 372 dc transfer characteristics BJT differential pair, 758–762 FET differential pair, 779–784 Dead band, 577 Decade, 475 Decoder, 1211 Demodulated output signal, 82 Depletion layer capacitance, 26 Depletion-load inverter, 1160 Depletion mode, 138 Depletion-mode JFET connected as current source, 716 Depletion-mode MOSFET, 138 Depletion-mode NMOS device, 161 Depletion region, 24 Desensitivity factor, 857 Design See Applications and design of integrated circuits; Electronic design Design applications active bandpass filter, 1122–1125 audio amplifier, 445–449 CMOS diff-amp, 821–824 dc power supply, 108–110 diode thermometer, 54–56 diode thermometer with bipolar transistor, 348–350 diode thermometer with MOS transistor, 190–192 electronic thermometer with instrumentation amplifier, 665–668 MOSFET feedback circuit, 924–926 NMOS current source, 734–736 offset voltage compensation network, 1047–1049 output stage using MOSFETs, 601–603 static CMOS logic gate, 1232–1234 static ECL gate, 1298–1299 two-stage amplifier, 264–266 two-stage amplifier with coupling capacitors, 537–539 two-stage CMOS op-amp, 992–995 Detector, 82–83 Detector circuit, 82 Diff-amp See Differential and multistage amplifiers Diff-amp circuit, 1256–1258 Diff-amp frequency response, 815–821 active load, 820–821 common-mode input signal, 817–819 differential-mode input signal, 816 emitter-degeneration resistors, 820 Difference amplifier, 645–649 Difference amplifier and bridge circuit design, 663–664 Difference amplifier block diagram, 754 Differential amplifier circuit, 1256–1258 Differential amplifier with active load, 790–801 BJT diff-amp with active load, 791–792 MOSFET diff-amp with cascode active load, 798–800 MOSFET differential amplifier with active load, 794–798 small-signal analysis of BJT active load, 792–794 Differential and multistage amplifiers, 753–850 basic BJT differential pair See Basic BJT differential pair basic FET differential pair See Basic FET differential pair BiCMOS circuits, 801–805 block diagram, 754 design application (CMOS diff-amp), 821–824 diff-amp frequency response, 815–821 differential amplifier with active load See Differential amplifier with active load gain stage/simple output stage, 806–811 generally, 754 simplified BJT op-amp circuit, 811–815 Differential input resistance, 646 Differential mode gain, 762 Differential-mode gain, 818 Differential-mode input resistance, 774–775 Differential-mode input voltage, 754, 760 Differential voltage gain, 623 Differentiator, 653 Diffusion, 17 Diffusion capacitance, 46 Diffusion conductance, 45 Diffusion current density, 19–21 Diffusion resistance, 45, 379 Digital circuits, 3–4 Digital electronics, 1141–1314 bipolar digital circuits See Bipolar digital circuits logic functions/logic gates, 1141–1142 logic levels, 1143 MOSFET digital circuits See MOSFET digital circuits noise margin, 1143–1144 preview, 1141 propagation delay time, 1144 switching time, 1144 Digital logic, 325–327 Digital logic gate, 167–168 Digital signals, 3–4 Digital-to-analog (D/A) converter, 1226, 1227–1229 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1363 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: Index Diode See also Diode types back-to-back Zener, 1094 ideal, 34, 35 LED, 49 piecewise linear, 37–41 pn junction, 9, 29–34 Schottky, 50 speedup, 1295 varactor, 26 Diode AND logic circuit, 105 Diode biasing, 592–594 Diode breakdown voltage, 52 Diode charging time, 78, 79 Diode circuit See Diode circuit; Diode circuit - ac equivalent circuit; Diode circuit - dc analysis; Diode types clamper circuit, 94–97 clipper circuit, 91–94 design application (dc power supply), 108–110 LED circuit, 107–108 logic circuit, 104–105 multiple-diode circuit, 97–105 photodiode circuit, 106 rectifier circuit See Rectifier circuit Zener diode circuit, 84–90 Diode circuit - ac equivalent circuit circuit analysis, 45–46 current-voltage relationships, 43–45 frequency response, 46–47 sinusoidal analysis, 43–47 small-signal equivalent circuit, 47 Diode circuit - dc analysis, 34–43 computer simulation/analysis, 41–42 iteration/graphical analysis techniques, 36–37 piecewise linear model, 37–41 summary, 42–43 Diode clamper circuit, 94–97 Diode clipper circuit, 91–94 Diode conduction time, 78, 79 Diode current, 78 Diode logic circuit, 104–105 Diode OR logic circuit, 104 Diode rectifier, 35 Diode thermometer, 54–56 Diode thermometer with bipolar transistor, 348–350 Diode thermometer with MOS transistor, 190–192 Diode types, 48–53 See also Diode LED, 49 photodiode, 49 pn junction diode, 29–34 Schottky barrier diode, 50–51 solar cell, 48–49 Zener diode, 51–53 Direct bandgap material, 49 Direct bandgap semiconductor, 107 Discrete circuit representation current amplifier, 882–886 transconductance amplifier, 888–892 transresistance amplifier, 895–901 voltage amplifier, 873–879 Discrete-circuit series-shunt feedback topology, 874 Discrete electronic circuit, Discrete-transistor shunt-series feedback circuit, 883 Discrete transistor shunt-shunt feedback circuit, 895 DMOS device, 566 DMOS process, 566 Dominant low-frequency pole, 968 Dominant pole, 500, 919 Domino circuit, 1193 Domino CMOS logic circuit, 1193 Donor impurity, 14 Doped semiconductor, 15 Doping, 14 Double-diffused process, 566 Drain current, 142 Drain terminal, 128 Drain-to-source resistance, 567 Drain-to-source voltage, 130, 131, 1297 DRAM, 144, 1209 DRAM cells, 1220–1221 Drift, 17 Drift current density, 17 Driver transistor, 158 Dual-slope A/D converter, 1231–1232 Duty cycle, 1097 Dynamic RAM (DRAM), 1209 Dynamic RAM (DRAM) cells, 1220–1221 Dynamic random access memory (DRAM), 144 Dynamic shift register, 1203–1204 E Early, J M., 296 Early effect, 296 Early voltage, 296, 695 Ebers-Moll model, 310 ECL See Emitter-coupled logic (ECL) ECL OR/NOR logic gate voltage transfer characteristics, 1266 ECL series gating, 1274, 1275 EEPROM, 1210, 1225 Einstein relation, 21 Electrically erasable ROM (EEPROM), 1210, 1225 Electron accumulation layer, 128 Electron diffusion coefficient, 20 Electron-hole recombination, 22 Electron inversion layer, 128 Electron mobility, 17 Electron-volt, 12n Electronic circuit, Electronic design, 615–618 bottom-up design process, 616 circuit performance estimation/simulation, 618 design approach, 615–616 flowchart, 617 generally, 617–618 prototype circuit, 618 system design, 616–617 top-down design process, 615–616 Electronic noise, 859 Electronic power supply, 68 Electronic thermometer See Thermometer Electronic thermometer with instrumentation amplifier, 665–668 Electronics, Elemental semiconductor, 10 Emitter, 286 Emitter bypass capacitor, 407–410, 496 Emitter-coupled logic (ECL), 753, 1256–1275 alternative ECL gates, 1270–1273 basic ECL logic gate, 1258–1259 dc analysis, 1266 diff-amp circuit, 1256–1258 ECL logic gate with emitter followers, 1259–1260 fanout, 1263–1264 low-power ECL, 1267–1269 modified ECL circuit configurations, 1267–1276 negative supply voltage, 1265–1266 noise margin, 1266–1267 power dissipation, 1262–1263 propagation delay time, 1263, 1275–1276 reference circuit, 1260–1262 series gating, 1273–1275 voltage transfer characteristics, 1266–1267 Emitter degeneration, 820 Emitter-degeneration resistors, 820 1363 Emitter-follower amplifier See Common-collector amplifier Emitter-follower circuit, 421, 533 Emitter resistor, 400 Energy band diagram, 12 Enhancement-load device, 157–165 Enhancement-load inverter, 1160 Enhancement mode, 128 Enhancement-mode MESFET, 183 Enhancement-mode MOSFET, 130 Enhancement-mode NMOS transistor, 1222 Enhancement-mode p-channel MESFET, 183 Enhancement-mode pn JFET, 183 EPROM, 1224 EPROM transistor, 1224–1125 Equilibrium pn junction, 23–25 Equivalent input gate capacitance, 519 Equivalent Miller capacitance, 816 Equivalent preamplifier circuit, 398 Equivalent Thevenin resistance, 333 Equivalent Thevenin voltage, 333 Equivalent two-port networks, 397 Erasable programmable ROM (EPROM), 1224 Error amplifier, 1116, 1120 Euler’s identity, Excess carrier lifetime, 22 Excess carriers, 21–22 Excess electron, 22 Excess hole, 22 Exclusive-OR function, 1166, 1167 Expanded hybrid-π equivalent circuit, 502–503 Exponential amplifier, 656 External offset compensation network, 1038–1039 Extrinsic semiconductor, 15 Extrinsic semiconductors, 14–16 F Fanout CMOS logic circuits, 1190 ECL, 1263–1264 NMOS logic circuits, 1167 TTL, 1285–1286 Feedback amplifier, 854 Feedback and stability, 851–946 bandwidth extension, 857–859 basic feedback concepts, 853–862 computer simulation, 853 current (shunt-series) amplifier, 879–886 design application (MOSFET feedback circuit), 924–926 frequency compensation, 918–924 gain sensitivity, 856–857 ideal closed-loop signal gain, 854–856 ideal feedback topologies, 863–873 loop gain, 901–907 noise sensitivity, 859–861 nonlinear distortion, 861–862 positive/negative feedback, 852–853 series-series configuration, 870–871 series-shunt configuration, 863–866 shunt-series configuration, 867–870 shunt-shunt configuration, 871–872 stability of feedback circuit See Stability of feedback circuit transconductance (series-series amplifier), 886–892 tranrsesistance (shunt-shunt amplifier), 833–901 voltage (series-shunt) amplifier, 873–879 Feedback circuit, 1075 Feedback effect, 507 Feedback transfer function, 854 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1364 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: 1364 Index FET See Field-effect transistor FET amplifier See Basic FET amplifier FET current sources, 707–719 basic two-transistor MOSFET current source, 707–711 bias-independent current source, 715–716 cascode current mirror, 711–713 JFET current source, 716–718 multi-MOSFET current-source circuit, 711–715 wide-swing current mirror, 713–714 Wilson current mirror, 713 FET differential pair See Basic FET differential pair Field effect, 126 Field-effect transistor, 125–204 CMOS, 140–141 constant-current biasing, 170–175 current source See FET current sources design application (diode thermometer with MOS transistor), 190–192 differential pair, 779–790 frequency response, 514–520 JFET, 180–190 MESFET, 182–190 MOSFET See MOSFET MOSFET dc circuit analysis, 146–165 NMOS, 128–134, 141 PMOS, 134–137, 141 Field oxide, 129 Filter, 75–76 active see Active filter band-reject, 1063 bandpass, 1063 Butterworth See Butterworth filter four-pole, 1069 general two-pole active, 1064 high-pass, 1062 higher-order Butterworth, 1068–1070 low-pass, 1063 one-pole, 1063 switched-capacitor, 1070–1074 three-pole, 1069 two-pole high-pass Butterworth, 1068 two-pole low-pass Butterworth, 1065–1067 Filter capacitor, 76 Filter circuit, 75 Finite differential-mode gain, 633 Finite open-loop gain, 633, 1013–1023 Finite output resistance, 142–143 First-order functions, 473–474 First-order transfer function, 473–474 Five-input NOR logic address decoder, 1211 555 circuit, 1100–1107 astable multivibrator, 1105–1107 basic operation, 1101–1103 monostable multivibrator, 1103–1105 other applications, 1107 555 IC timer circuit, 1101 555 monolithic integrated circuit timer, 1100 Flash A/D converter, 1229–1230 Flash memory, 1210 Flip-flop D, 1206–1207 defined, 1205 J-K, 1251 R-S, 1205–1206 Floating-gate electrically erasable programmable ROM, 1225 Foldback characteristic, 1121 Folded cascode CMOS op-amp circuit, 976–979 Folded-cascode stage, 976 Forbidden bandgap, 12 Forced beta, 309 Forward-active operating mode, 287 Forward bias, 27 Forward-biased pn junction, 27, 28 Forward diode resistance, 38 Forward transconductance, 760 4-bit weighted-resistor D/A converter, 1227 Four-pole high-pass Butterworth filter, 1070 Four-pole low-pass Butterworth filter, 1070 Four-terminal NMOS device, 214 FPBW, 1029 Frequency compensation, 918–924 basic theory, 918–920 closed-loop frequency response, 920–922 Miller compensation, 922–924 problem-solving technique, 920 Frequency response, 469–558 amplifier, 470–472 bipolar transistor, 502–514 Bode plot, 474–479 bypass capacitor effects, 496–499 cascode circuit, 528–532 common-base circuit, 524–528 common-emitter circuit, 521–524 common-gate circuit, 524 common-source circuit, 524 coupling and bypass capacitors, 499–501 coupling and load capacitors, 493–496 coupling capacitor effects, 485–492 cutoff frequency, 506–507 emitter-follower circuit, 532–536 expanded hybrid-π equivalent circuit, 502–503 FET, 514–520 first-order functions, 473–474 high-frequency amplifier design, 536 high-frequency equivalent circuit, 514–516 input coupling capacitor, 485–488 load capacitor effects, 492–493 Miller capacitance, 510–512, 518–520 Miller effect, 507–509, 512–513, 518–520 multistage circuits, 485 open-circuit time constant, 480–482 output coupling capacitor (common-source circuit), 488–490 output coupling capacitor (emitter-follower circuit), 490–492 s-domain analysis, 472–473 short-circuit current gain, 503–505 short-circuit time constant, 480–482 source-follower circuit, 532 system transfer functions, 472–485 time constant technique, 488 time response, 483–485 transistor amplifiers with circuit capacitors, 485–501 transistor circuits, 520–537 unity-gain bandwidth, 516–518 Frequency-selective network, 1075 Full-power-bandwidth (FPBW), 1029 Full-wave bridge rectifier, 73 Full-wave rectification, 71–74 Full-wave rectifier, 72 General op-amp circuit design, 948–950 General two-pole active filter, 1064 General two-pole low-pass filter, 1065 Generalized CMOS clocked logic circuit, 1193 Generalized current mirror, 705, 706 Generalized inverting amplifier, 652 Generalized op-amp summing amplifier, 659 Generalized three-stage amplifier, 436 Generalized two-stage amplifier, 175 Germanium, 10, 13 Graphical analysis technique, 36 G I gm mismatch BJT differential pair, 770 FET differential pair, 788 GaAs MESFET, 182 Gain-bandwidth product, 495, 1025–1026 Gain margin, 917 Gain sensitivity, 856–857 Gallium arsenide, 10, 13 Gallium phosphide, 10 Gate, 126 Gate potential, 1169 Gate-to-channel space charge region, 181 Gate-to-source voltage, 130, 225 General CMOS design, 1188 General constants and conversion factors, 1315 IC biasing See Integrated circuit biasing and active loads IC npn bipolar transistor, 287 IC op-amp, 622 See also Ideal op–amp IC power amplifiers See Integrated circuit power amplifiers IC resistor, 693 Ideal closed-loop signal gain, 854–856 Ideal closed-loop voltage gain, 634 Ideal current-voltage relationships, 28–29 Ideal difference amplifier, 645 Ideal diode, 34, 35 Ideal feedback topologies, 863–873 Ideal op-amp, 621–686 antilog amplifier, 656 H h-parameters, 390–392 Half-wave rectification, 68–71 Half-wave rectifier, 69 Half-wave rectifier circuit, 70 Harmonic distortion, 375–376 See also Total harmonic distortion (THD) Hartley oscillator, 1083 Heat sink, 567–571 Hester, Richard, 384 HEXFET structure, 566 High-frequency amplifier design, 536 High-frequency equivalent circuit, 514–516 High-frequency radio-frequency (RF) circuit design, 572 High-frequency range, 470, 471 High-frequency response of transistor circuits, 520–537 cascode circuit, 528–532 common-base circuit, 524–528 common-emitter circuit, 521–524 common-gate circuit, 524 common-source circuit, 524 emitter-follower circuit, 532–536 high-frequency amplifier design, 536 source-follower circuit, 532 High-pass filter, 1062 High-pass network, 476 Higher-order Butterworth filter, 1068–1070 Historical overview, 1–2 Hole, 13 Hole diffusion coefficient, 20 Hole inversion layer, 128 Hole mobility, 18 Hybrid FET op-amp LF155 series, 990–991 LH002/42/52 series, 989–990 Hybrid-π, 378 Hybrid-π equivalent circuit, 303, 380 Hybrid-π equivalent circuit (Early effect), 385–389 Hysteresis effect, 1089 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1365 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: Index applications, 641–657 circuit design, 658–665 circuits See Operational amplifier circuits comparator, contrasted, 1085 current-to-voltage converter, 641–642 defined, 621 derivation of name, 621 design application (electronic thermometer with instrumentation amplifier), 665–668 difference amplifier, 645–649 difference amplifier and bridge circuit design, 663–664 differentiator, 653 evolution, 622 exponential amplifier, 656 generally, 622 ideal parameters, 622–625 instrumentation amplifier, 650–651 integrator, 652–653 inverting amplifier, 627–635 log amplifier, 655 negative feedback analysis, 626 non-linear circuit applications, 654–657 noninverting amplifier, 638–639 OTA, 657–658 output currents, 627 output voltage swing, 627 practical specifications, 626–627 precision half-wave rectifier, 654–655 PSpice modeling, 627 reference voltage source design, 661–663 summing amplifier, 636–638 summing op-amp circuit design, 659–661 T-network, 631–633 voltage follower, 639–640 voltage-to-current converter, 642–645 Ideal series-series feedback topology, 870 Ideal series-shunt feedback topology, 864 Ideal short-circuit output current, 519 Ideal shunt-series feedback topology, 867 Ideal shunt-shunt feedback topology, 871 Ideal voltage reference circuit, 85–88 Idealized class-B operation, 576–577 Idealized power efficiency, 579–581 Identical transistor characteristics, 687 Impedance, 217 capacitor, 217, 399 input See Input impedance output See Output impedance Impedance buffer, 640 Impedance transformer, 425, 640 Incremental current gain, 380 Indirect bandgap material, 49 Indium phosphide, 10 Induced positive space-charge region, 128 Inductively coupled amplifier, 587–588 Input base-emitter port, 378–379 Input bias current, 1042–1044 Input buffer-inverter pair, 1211 Input buffer transistors, 596–599 Input coupling capacitor, 485–488 Input dc offset voltage, 1030 Input impedance common-base amplifier, 433–434 common-drain amplifier, 231–233 common-gate amplifier, 236 emitter-follower amplifier, 423–424 Input load line, 306–307 Input offset current, 1042 Input offset current temperature coefficient, 1046 Input offset voltage, 1031 Input offset voltage drift, 1045 Input resistance, 629, 774, 808 Input signal-to-noise ratio, 859 Input stage offset voltage effects, 1030–1037 Input transistor, 1280–1282 Instantaneous gate-to-source voltage, 258 Instantaneous power dissipation, 562, 579 Instantaneous value, Instrumentation amplifier, 650–651, 665–668 Insulator, 12 Integrated circuit biasing, 342–343 Integrated circuit biasing and active loads, 687–751 bipolar transistor current sources See Bipolar transistor current sources circuits with active loads See Circuits with active loads design application (NMOS current source), 734–736 FET current sources See FET current sources small-signal analysis - active load circuits, 726–734 Integrated circuit npn bipolar transistor, 287 Integrated circuit operational amplifier, 622 See also Ideal op–amp Integrated circuit power amplifiers, 1107–1113 bridge power amplifier, 1113 LM380 power amplifier, 1108–1111 PA12 power amplifier, 1111–1113 Integrated circuit resistor, 693 Integrator, 652–653 Interdigitated bipolar transistor, 565 Interdigitated structure, 565 Intrinsic carrier concentration, 13 Intrinsic semiconductors, 10–14 Inverse-active mode, 310 Inverse Laplace transform, 484 Inverse resistance reflection rule, 424 Inverter BiCMOS, 1296–1297 bipolar circuit, 323 CMOS, 1168–1182 NMOS, 165–166, 1148–1163 Inverter gain, 1155 Inverting amplifier, 627–635 Inverting amplifier closed-loop gain, 1014–1016 Inverting amplifier closed-loop input resistance, 1019–1021 Inverting comparator circuit, 1086 Inverting input terminal, 623 Inverting Schmitt trigger, 1087–1090 Inverting summing amplifier, 637 Iteration, 36 J J-K flip-flop, 1251 JFET, 180–190 JFET amplifier, 258–263 JFET cascode current source, 717 JFET current source, 716–718 JFET differential amplifier, 788–789 JFET logic circuit, 1147 JFET operational amplifier circuit, 989–992 JFET source-follower circuit, 262 Junction area, 106 Junction capacitance, 26 Junction field-effect transistor (JFET), 180–190 K Kilby, Jack, Kirchhoff’s current law expanded hybrid-π equivalent circuit, 391 Miller effect/capacitance, 518 npn transistor, 291 system transfer functions, 473 Kirchhoff’s voltage law clamper, 94 common-emitter circuit, 305 1365 expanded hybrid-π equivalent circuit, 391 iteration/graphical analysis technique, 36 load line/modes of operation, 307 piecewise linear model, 41 voltage doubler circuit, 83 L Large signal analysis, 371 Large-value resistors, 1070 Leakage currents, 298–299 Least significant bit (LSB), 1226 LED, 49 LED circuit, 107–108 LF155 BiFET op-amp, 990–991 LF155 BiFET op-amp input stages, 991 LH002/42/52 series hybrid JFET op-amp, 990 LH002/42/52 series op-amp, 989–990 LH0042C data, 990 Light-emitting diode (LED), 49 Light-emitting diode (LED) circuit, 107 Limiter circuit, 91 Line regulation, 1114 Linear amplifier, 3, 205, 206 See also Basic FET amplifier; Bipolar linear amplifier, 370 Linear ramp generator, 1107 Linear term, 374 LM741 op-amp, 995 See also Bipolar operational amplifier circuit, 1325–1327 LM380 power amplifier, 1108–1111 LM380 power amplifier characteristics, 1110 LM555 timer circuit, 1101 LM78LXX series three-terminal positive voltage regulator, 1119 Load capacitor effects, 492–493 Load curve, 240 Load line, 37, 153–155, 306–310 Load regulation, 89, 1115 Loading effect, 219, 403 Log amplifier, 655 Logic level, 1259 Logic circuits, 104–105 BiCMOS digital circuits, 1296–1298 bipolar See Bipolar digital circuits CMOS See CMOS logic circuits emitter-coupled logic (ECL), 1256–1267 JFET, 1147 NMOS, 1163–1168 NMOS transistor digital, 167–168 sequential, 1202–1208 Logic function, 104–105, 1208 Logic functions/logic gates, 1141–1142 Logic levels, 1143 Long-channel device, 141 Loop gain, 855, 901–907 Low-frequency dominant pole, 988 Low-frequency range, 470, 471 Low-pass filter, 1063 Low-pass network, 478 Low-power ECL, 1267–1269 Low-power Schottky TTL circuits, 1293–1295 Low-power Schottky TTL NAND logic circuit, 1293 Lower corner, 481 Lower corner frequency, 501 Lower cutoff frequency, 501 Lowercase letter/lowercase subscript, Lowercase letter/uppercase subscript, LSB, 1226 M Majority carrier, 16 Majority-carrier device, 180 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1366 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: 1366 Index Manufacturers’ data sheets See Selected manufacturers’ data sheets Mask-programmable ROM, 1209, 1222 Matched or identical transistor characteristics, 687 Matched transistor, 950 Maximally flat magnitude filter, 1065 Maximum attainable conversion efficiency, 574 Maximum average output signal power, 590 Maximum gain asymptote, 493 Maximum output symmetrical swing, 415 Maximum possible average power, 581 Maximum power conversion efficiency, 590 Maximum power transfer theorem, 574 Maximum rated collector current, 561 Maximum rated current/maximum rated voltage, 560n Maximum rated power, 563 Maximum safe power dissipation, 569, 570 Maximum symmetrical swing, 415–420 MC14573 CMOS op-amp circuit circuit description, 970 dc analysis, 970–972 small-signal analysis, 972–973 MC14573 CMOS op-amp equivalent circuit, 971 Memory See Computer memory Memory architecture, 1210 Memory cell, 1209 MESFET, 182–190 Metal-oxide-semiconductor field-effect transistor See MOSFET Metal-semiconductor field-effect transistor (MESFET), 182–190 Metallurgical junction, 23 Microelectronics, Microphone, 663 Microphone system, 645 Midband range, 470, 471 Midband small-signal voltage gain, 255 Midband voltage gain, 527 Miller capacitance cascode circuit, 529 common-emitter/common-source circuits, 521 expanded hybrid-? equivalent circuit, 510–512 FET, 518–520 Miller compensation, 922–924, 968 Miller effect expanded hybrid-p equivalent circuit, 507–509 FET, 518–520 importance, 523 physical effect, 512–513 Miller multiplication factor, 821, 922 Minimum β, 1279 Minority carrier, 16 Minority carrier electron concentration, 288 -3 db frequency, 475 Model, 34 Modified Darlington pair configuration, 801 Modified ECL circuit configurations, 1267–1276 Modified ECL logic gate, 1268 Modified MOSFET Wilson current source, 713 Modified totem-pole output stage, 1287–1288 Modified Wilson current source, 713 Monostable multivibrator, 1098–1100, 1103–1105 MOS capacitor (n-type substrate), 128 MOS capacitor (p-type substrate), 127 MOS capacitor structure, 127 MOS field-effect transistor See MOSFET MOSFET, 126–146 body effect, 143–144 breakdown effect, 144–145 circuit symbols/conventions, 137–138 CMOS, 140–141 common-source circuit, 146–153 dc circuit analysis, 146–165 digital circuits See MOSFET digital circuits digital logic gate, 167–168 finite output resistance, 142–143 ideal current-voltage characteristics - PMOS, 135–137 load line/modes of operation, 153–155 multistage circuit, 175–179 n-channel depletion-load device, 161–163 n-channel depletion-mode, 138–140 n-channel enhancement-load device, 157–161 NMOS, 128–134, 141 NMOS inverter, 165–166 nonideal current-voltage characteristics, 142–145 p-channel depletion-mode, 140 p-channel enhancement-load device, 163–164 PMOS, 134–137, 141 power, 565–567 short-channel effects, 141–142 small-signal amplifier, 168–169 subthreshold conduction, 144 summary of transistor operation, 141 switching, 165–166 temperature effect, 145 two-terminal MOS structure, 126–128 MOSFET amplifier graphical analysis, 206–209 load line, 207 modeling the body effect, 214–215 small-signal equivalent circuit, 210–214 small-signal parameters, 206–210 transistor parameters, 207–209 MOSFET cascode current mirror, 711 MOSFET cascode current source, 786 MOSFET cascode diff-amp with cascode active load, 800 MOSFET class-AB output stage, 584–585 MOSFET Colpitts oscillator, 1082 MOSFET common-source circuit, 492 MOSFET current source, 709 MOSFET current-source circuit, 711 MOSFET dc analysis, 146–165 MOSFET diff-amp with cascode active load, 798–800 MOSFET differential amplifier with active load, 794–798 MOSFET digital circuits, 1147–1254 clocked CMOS logic circuits, 1191–1193 CMOS inverter See CMOS inverter CMOS logic circuits See CMOS logic circuits data converter See Data converter; Sequential logic circuits design application (static CMOS logic gate), 1232–1234 memory See Computer memory NMOS inverter See NMOS inverter NMOS logic circuits, 1163–1168 sequential logic circuits See Sequential logic circuits transmission gates See Transmission gates MOSFET feedback circuit, 924–926 MOSFET high-frequency circuit, 519 MOSFET integrated circuit amplifier, 155 MOSFET small-signal amplifier, 168–169 MOSFET Wilson current source, 713 Most significant bit (MSB), 1226 MSB, 1226 Multi-MOSFET current-source circuit, 711–715 Multioutput transistor current source, 704 Multiple-diode circuit, 97–105 Multistage amplifiers, 254–258 See also Differential and multistage amplifiers cascade circuit, 254–256 cascode circuit, 256–257 Multistage BJT amplifier cascade configuration, 436–438 cascode configuration, 440–442 Darlington pair configuration, 439–440 Multistage BJT analysis cascade configuration, 436–438 cascode configuration, 440–442 Multistage MOSFET circuit, 175–179 Multistage transistor circuit, 344–348 Multitransistor circuit cascade configuration, 176–177 cascode configuration, 178–179 Multitransistor current mirror, 704–706 Multivibrator astable, 1096, 1105–1107 bistable, 1087 defined/types, 1084 monostable, 1098–1100, 1103–1105 one-shot, 1098, 1103 Schmitt trigger monostable, 1098 μA-709, 622 μA-741, 622 Music, N N-bit D/A converter, 1229 n-channel depletion-load device, 161–163 n-channel depletion-mode MOSFET, 138–140 n-channel enhancement-load device, 157–161 n-channel enhancement-mode MESFET, 183 n-channel enhancement-mode MESFET circuit, 189 n-channel enhancement-mode MOSFET, 128–134, 624, 1153 n-channel JFET, 181, 184 n-channel JFET circuit, 186 n-channel MESFET, 182 n-channel MOSFET, 128–134, 141, 1148–1150 n-channel MOSFET detailed cross section, 1148 n-channel MOSFET simplified view, 1148 n-type semiconductor, 14, 17 NDS9410 n-channel enhancement-mode MOSFET, 1322–1324 Near-avalanche breakdown, 145 Negative and positive biasing, 339–341 Negative feedback, 626, 852–853 Negative feedback analysis, 626 NMOS, 128–134, 141 NMOS amplifier with active loads, 247–254 NMOS cascade circuit, 255 NMOS cascode circuit, 256 NMOS common-source circuit, 225 NMOS current source, 734–736 NMOS depletion-load amplifier, 244–247 NMOS enhancement-load amplifier, 239–244 NMOS exclusive-OR logic gate, 1167 NMOS input buffer-inverter, 1211 NMOS inverter, 165–166, 1148–1163 body effect, 1160–1162 depletion load, 1157–1160 n-channel MOSFET, 1148–1150 resistor load, 1150–1157 NMOS inverter circuit, 165 NMOS inverter with depletion load, 1157–1160 NMOS inverter with resistor load, 1150–1157 NMOS logic circuits, 1163–1168 NMOS NAND logic gate, 1165 NMOS NOR logic gate, 167, 1163–1165 NMOS pass networks, 1198–1199 NMOS R-S flip-flop, 1205 NMOS shift register voltage, 1204 NMOS 16 x mask-programmable ROM, 1222 NMOS source follower, 227 NMOS source-follower circuit, 250 NMOS SRAM cells, 1212–1214 NMOS transistor digital logic circuit, 167–168 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1367 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: Index NMOS transmission gate, 1194–1198 Noise, 859 Noise margin, 1143–1144, 1178–1182, 1266–1267 Noise sensitivity, 859–861 Nondominant-pole frequency, 982 Nonideal current-voltage characteristics, 142–145 Nonideal effects in op-amp circuits, 1009–1060 basic bipolar diff-amp stage, 1030–1032 bias current compensation, 1043–1044 bias current effects, 1042–1043 bipolar active load diff-amp stage, 1032–1035 CMRR, 1046–1047 design application (offset voltage compensation network), 1047–1049 external offset compensation network, 1038–1039 finite open-loop gain, 1013–1023 frequency response, 1023–1030 gain-bandwidth product, 1025–1026 input bias current, 1042–1044 input offset current temperature coefficient, 1046 input stage offset voltage effects, 1030–1037 input voltage limitations, 1011–1013 inverting amplifier closed-loop gain, 1014–1016 inverting amplifier closed-loop input resistance, 1019–1021 MOSFET diff-amp stage, 1035–1037 noninverting amplifier closed-loop gain, 1016–1017 nonzero output resistance, 1021–1023 offset-null terminals, 1039–1041 offset voltage, 1030–1041 offset voltage compensation, 1037–1041 offset voltage temperature coefficient, 1045–1046 open-loop/closed-loop frequency response, 1023–1025 output voltage limitations, 1013 practical op-amp parameters, 1010–1011 slew rate, 1026–1029 temperature effects, 1045–1046 Noninverting amplifier, 638–639 Noninverting amplifier closed-loop gain, 1016–1017 Noninverting comparator circuit, 1086 Noninverting input terminal, 623 Noninverting Schmitt trigger circuit, 1090–1091 Nonlinear distortion, 861–862 Nonsaturation region, 132, 1149, 1169 Nonsinusoidal oscillators/timing circuits, 1096–1107 555 circuit See 555 circuit monostable multivibrator, 1098–1100 Schmitt trigger oscillator, 1096–1098 Nonzero output resistance, 1021–1023 NOR decoder, 1211 NOR logic function, 326 Norton equivalent circuit, 396, 509 Norton equivalent signal source, 235 Notation, 4–5 Noyce, Robert, npn bipolar transistor, 502 base current, 289–290 circuit symbol, 294 collector current, 289 common-emitter configuration, 291 common-emitter current gain, 290–291 cross section, 287 current relationships, 291 current-voltage relationships, 294 emitter current, 288–289 generally, 286 minority carrier concentration, 288 notation, 290n other current components, 289n simple block diagram, 294 simple geometry, 286 summary of transistor operation, 291–292 transistor currents, 287–288 npn common-emitter circuit, 400 npn general purpose amplifier, 1318–1319 Null technique, 952 Nyquist diagram, 913 Nyquist plot, 913, 914 Nyquist stability criterion, 913–916 O Octave, 475 Offset compensation network, 1038 Offset-null terminal, 1038 Offset-null terminals, 1039–1041 Offset voltage, 1030–1041 Offset voltage compensation, 1037–1041 Offset voltage compensation network, 1047–1049 Offset voltage temperature coefficient, 1045–1046 Ohmic contact, 51 Ohm’s law, 34 On resistance, 566 One-bit full-adder circuit, 1207, 1208 One-pole filter, 1063 One-pole low-pass filter, 1072 One-shot multivibrator, 1098, 1103 One-sided output, 762, 763–765 One-transistor dynamic RAM cell, 1220 Op-amp See Ideal op-amp Op-amp applications, 641–657 Op-amp circuit design, 658–665 Op-amp circuits See Operational amplifier circuits Op-amp difference amplifier, 645 Op-amp differentiation, 653 Op-amp integrator, 652 Op-amp series-shunt feedback circuit, 873 Op-amp shunt-series feedback configuration, 881 Op-amp shunt-shunt feedback configuration, 884 Op-amp voltage reference circuit, 661 Op-amp with input bias currents, 1042 Open-circuit time constant, 480 Open-loop comparator circuit, 1087 Open-loop gain, 625 Open-loop transresistance gain factor, 895 Operational amplifier See Ideal op-amp Operational amplifier circuits, 947–1008 BiCMOS operational amplifier circuit, 981–989 CA3140 BiCMOS circuit description, 983–984 circuit element matching, 950 CMOS op-amp circuits See CMOS operational amplifier circuits folded cascode CMOS op-amp circuit, 976–979 general design philosophy, 948–949 general op-amp circuit design, 948–950 hybrid FET op-amp, LF155 series, 990–991 hybrid FET op amp, LH002/42/52 series, 989–990 JFET operational amplifier circuit, 989–992 MC14573 CMOS circuit, 970–973 problem-solving technique, 969 741 op-amp See Bipolar operational amplifier circuit three-stage CMOS op-amp, 973–976 Operational transconductance amplifier (OTA), 657–658 Optical transmission system, 49 Optoisolator, 108 OR logic function, 104 Oscillator, 1074–1084 basic principles, 1075–1076 Colpitts, 1082–1083 crystal, 1083–1084 defined, 1075 Hartley, 1083 1367 nonsinusoidal, 1096–1107 phase-shift, 1076–1078 Pierce, 1084 Schmitt trigger, 1096–1098 Wien-bridge, 1079–1082 OTA, 657–658 Output coupling capacitor common-source circuit, 488–490 emitter-follower circuit, 490–492 Output dc offset voltage, 1030 Output impedance common-base amplifier, 433–434 common-drain amplifier, 231–233 common-gate amplifier, 236 emitter-follower amplifier, 423–424 Output resistance, 185, 297 Output signal-to-noise ratio, 859 Output stage linearity characteristic, 559 Output stage using MOSFETs, 601–603 Output stages and power amplifiers, 559–614 class-A operation, 572–576 class-A power amplifier, 586–591 class-AB operation, 581–585 class-AB push-pull complementary output stages, 591–601 class-B operation, 576–581 class-C operation, 585–586 design application (output stage using MOSFETs), 601–603 power transistors See Power transistors scope of text, 572 THD, 560 Output voltage swing, 627 Overlap capacitance, 515 P p-channel depletion-mode MOSFET, 140 p-channel enhancement-load device, 163–164 p-channel enhancement-mode MOSFET (PMOS), 134–137, 141 p-channel JFET, 180, 184 p-channel JFET circuit, 187 p-type semiconductor, 15, 17 PA12 power amplifier, 1111–1113 Parallel A/D converter, 1229–1230 Parallel-based clipper, 92 Parallel-based diode clipper circuit, 92 Parallel-plate capacitor, 127 Parasitic capacitance, 515 Pass transistor logic, 1198 Passive device, Passive limiter, 91 Peak inverse voltage (PIV), 32 Phase margin, 916 Phase quantity, Phase shift, 383 Phase-shift oscillator, 1076 Phase-shift oscillator circuit, 1078 Phasor quantity, 208, 372 Photocurrent, 48, 106 Photodetector, 49 Photodiode, 49 Photodiode circuit, 106 Photon flux density, 106 Physical constants and conversion factors, 1315 Piecewise linear diode, 37–41 Pierce oscillator, 1084 Piezoelectric crystal, 1083 Piezoelectric crystal circuit symbol, 1083 Piezoelectric crystal equivalent circuit, 1083 Pinchoff, 181 Pinchoff voltage, 183 PIV, 32 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1368 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: 1368 Index PMOS, 134–137, 141 PMOS device, 1171–1174, 1177, 1188 PMOS transistor, 1176 pn JFET, 180–182 pn junction, 23–34 diode, 29–34 equilibrium, 23–25 forward -biased, 27, 28 ideal current-voltage relationships, 28–29 reverse-biased, 25–27 pn junction diode, 9, 29–34 breakdown voltage, 30–32 switching transient, 32–33 temperature effects, 30 pn junction FET, 180 pn junction solar cell, 48 pnp bipolar transistor base current, 293 circuit symbol, 294 collector current, 293 electron and hole currents, 293 emitter current, 292 forward active mode operation, 292–293 simple block diagram, 294 simple geometry, 286 pnp general purpose amplifier, 1320–1321 Pole-splitting, 924 Polycrystalline silicon layer, 126 Polysilicon fuse, 1223 Positive and negative biasing, 339–341 Positive feedback, 852, 1087 Positive logic system, 326 Positive voltage regulator basic circuit description, 1119–1121 protection devices, 1121–1122 temperature compensation, 1121 three-terminal regulator, 1122 Power BJT, 561–565, 567 Power conversion efficiency, 573 Power derating curve, 569, 570 Power dissipation BJT, 562 class-B operation, 579, 580 CMOS inverter, 1176–1178 ECL, 1262–1263 emitter-coupled logic (ECL), 1262–1263 maximum safe, 569, 570 RAM cells, 1213 transistors, 559 Power MOSFET, 565–567 Power transistors, 560–571 heat sink, 567–571 power BJT, 561–565, 567 power MOSFET, 565–567 Precharge cycle, 1193 Precision half-wave rectifier, 654–655 Precision half-wave rectifier circuit, 654 Precision resistors (1% tolerance), 1329–1330 Pressure transducer, 663 Principle of superposition, 371, 636, 1085 Problem-solving technique bipolar ac analysis, 384 bipolar dc analysis, 309 BJT current source circuits, 698 Bode plot of gain magnitude, 492 diff-amps with resistive loads, 774 frequency compensation, 920 maximum symmetrical swing, 416–417 MOSFET ac analysis, 212–214 MOSFET current-source circuit, 711 multistage circuits, 815 operational amplifier circuits, 969 Problems, answers to, 1337–1358 Process conduction parameter, 134 Programmable ROM (PROM), 1209, 1222–1223 PROM, 1209, 1222–1223 Propagation delay time, 1144 CMOS logic circuit, 1190, 1191 CMOS logic circuits, 1191 ECL, 1263 emitter-coupled logic (ECL), 1263, 1275–1276 modified ECL circuit configurations, 1275–1276 Prototype circuit, 618 PSpice, 41 Pspice circuit schematic, 100 Pull-down resistor, 1279 Pulse position modulator, 1107 Pulse width modulator (PWM), 1107 Punch-through, 145 PWM, 1107 Q Q-point, 37, 307, 1158 Q-point stability, 224 Quasistatic quantities, Quiescent collector current, 954 Quiescent drain current, 261 Quiescent drain-to-source voltage, 225 Quiescent gate-to-source voltage, 236 Quiescent output voltage, 1109 Quiescent point, 37, 307 Quiescent source-to-gate voltage, 230 R Rc mismatch, 769–770 RD mismatch, 787–788 R-2R ladder network D/A converter, 1228–1229 R-S flip-flop, 1205–1206 Radian frequency, 470n RAM, 1209, 1212–1221 RAM architecture, 1210 RAM memory cells, 1212–1221 Random access memory (RAM), 1209, 1212–1221 Rated power, 570 RC filter, 75 Read-only memory (ROM), 1209–1210, 1221–1225 Reading list, 1333–1336 analog integrated circuits, 1334 digital circuits and devices, 1335 general electronics texts, 1333 linear circuit theory, 1333–1334 op-amp circuits, 1334–1335 semiconductor devices, 1334 SPICE and PSpice references, 1336 Recombination current, 289 Recovery time, 1099 Rectification, 68 Rectifier, 34, 35 Rectifier circuit bridge rectifier, 72 detector, 82–83 diode current, 78 filter, 75–76 full-wave rectification, 71–74 half-wave rectification, 68–71 ripple voltage, 76, 77 voltage doubler circuit, 83–84 Rectify, 35 Reference books See Reading list Reference circuit, 1260–1262 Reference current basic three-transistor current source, 694 bipolar current-source circuits, 709–710 current mirror circuits, 715 two-transistor current source, 688, 691 Reference voltage source design, 661–663 Region active, 287 channel, 128 depletion, 24 gate-to-channel space charge, 181 induced positive space-charge, 128 nonsaturation, 132, 1149, 1169 saturation, 131, 1149, 1169, 1172 space-charge, 24 triode, 132 Regulation line, 1114 load, 89, 1115 source, 88, 89 voltage regulator, 84 Regulator basic series-pass voltage, 1116 voltage, 84 Zener diode voltage regulator circuit, 85, 88 Resistance on, 566 common-mode input, 775 differential input, 646 differential-mode input, 774–775 diffusion, 379 finite output, 142–143 input, 629, 774 nonzero output, 1021–1023 output, 185, 297 reverse-biased diffusion, 390 series, 390 small-signal input, 391–392 small-signal transistor output, 385 thermal, 567 Thevenin, 399 Zener, 84 Resistance reflection rule, 401, 423 Resistive voltage divider, 1116 Resistivity, 18 Resistor, 687 Resistor biasing technique, 687 Resistors See Standard resistor and capacitor values Restoring logic family, 1155 Reverse bias, 25 Reverse-bias saturation current, 28, 30 Reverse-biased diffusion resistance, 390 Reverse-biased drain-to-substrate pn junction, 130 Reverse-biased pn junction, 25–27 Reverse-saturation current, 666 Ripple voltage, 76–77, 77 Rolloff, 1063 ROM, 1209–1210, 1221–1225 Row and column decoder, 1211 RS flip-flop, 1101 S s-domain analysis, 472–473 Safe operating area (SOA), 563 Safe power dissipation, 569, 570 Sampled-data system, 1074 Saturation mode, 307 Saturation region, 131, 1149, 1169, 1172 Schmitt trigger, 1084 Schmitt trigger application, 1092–1094 Schmitt trigger circuit, 1084–1095 applied reference voltages, 1091–1092 basic inverting Schmitt trigger, 1087–1090 comparator, 1084–1087 limiters, 1094–1095 noninverting Schmitt trigger circuit, 1090–1091 Schmitt trigger application, 1092–1094 Schmitt trigger monostable multivibrator, 1098 Schmitt trigger oscillator, 1096–1098 Schottky barrier diode, 50–51 Schottky clamped transistor, 1289–1291 Schottky clamped transistor equivalent circuit, 1290 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1369 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: Index Schottky clamped transistor symbol, 1290 Schottky diode, 50 Schottky transistor-transistor logic, 1289–1296 advanced Schottky TTL circuits, 1295–1296 low-power Schottky TTL circuits, 1293–1295 Schottky clamped transistor, 1289–1291 Schottky TTL NAND circuit, 1291–1293 Schottky TTL NAND circuit, 1291–1293 Second breakdown, 562 Selected manufacturers’ data sheets, 1317–1327 LM741 op-amp, 1325–1327 NDS9410 n-channel enhancement-mode MOSFET, 1322–1324 npn general purpose amplifier, 1318–1319 pnp general purpose amplifier, 1320–1321 single n-channel enhancement-mode FET, 1322–1324 2N2222 npn bipolar transistor, 1318–1319 2N2907 pnp bipolar transistor, 1320–1321 Semiconductor constants, 1315 Semiconductor device, Semiconductor materials and diodes, 9–66 design application (diode thermometer), 54–56 diode circuits See Diode circuits; Diode circuits - ac equivalent circuit; Diode circuits - dc analysis; Diode types drift and diffusion currents, 17–21 excess carriers, 21–22 extrinsic semiconductors, 14–16 intrinsic semiconductors, 10–14 pn junction See pn junction semiconductor materials and properties, 10–22 Semiconductor materials and properties, 10–22 Semiconductor memory See Computer memory Sequential logic circuits, 1202–1208 CMOS full-adder circuit, 1207–1208 D flip-flop, 1206–1207 dynamic shift register, 1203–1204 R-S flip-flop, 1205–1206 Series gating, 1273–1275 Series-pass regulator, 1116–1118 Series-pass transistor, 1116 Series resistance, 390 Series-series amplifier, 886–892 Series-series configuration, 870–871 Series-shunt amplifier, 873–879 Series-shunt configuration, 863–866 741 op-amp See Bipolar operational amplifier circuit Seven-segment LED display, 107 Shift register, 1203 Shockley, William, Short-channel device, 141 Short-channel effects, 141–142 Short-circuit current gain, 503–505 Short-circuit protection circuitry, 960 Short-circuit protection device, 960 Short-circuit time constant, 480 Shunt-series amplifier, 879–886 Shunt-series configuration, 867–870 Shunt-shunt amplifier, 833–901 Shunt-shunt configuration, 871–872 Signal, 206, 370 Signal frequency See Frequency response Signal processing, 67 Signal-to-noise ratio, 859 Silicon, 10, 13 Silicon dioxide, 1224 Simple all-bipolar op-amp circuit, 1012 Simple antilog (exponential) amplifier, 656 Simple bipolar operational amplifier, 812, 949 Simple BJT amplifier with active load, 720 Simple emitter-follower output stage, 806 Simple filter circuit, 75 Simple high-pass filter, 1062 Simple log amplifier, 655 Simple NMOS transistor digital logic circuit, 167–168 Simple op-amp voltage reference circuit, 661 Simple series-pass regulator, 1116–1118 Simple voltage-to-current converter, 642 Simple Zener diode voltage reference circuit, 84–90 Simplified BJT op-amp circuit, 811–815 Simulation models, 618 Simulation program with integrated circuit emphasis (SPICE), 41 Single base resistor biasing, 331–333 Single-diode clipper circuit, 91 Single n-channel enhancement-mode FET, 1322–1324 Single-stage common-emitter amplifier, 909 Single-stage integrated circuit MOSFET amplifier, 238–254 CMOS common-gate amplifier, 251–254 CMOS common-source amplifier, 247–249 CMOS source-follower amplifier, 249–251 load line, 239 NMOS amplifier with active loads, 247–254 NMOS depletion-load amplifier, 244–247 NMOS enhancement-load amplifier, 239–244 Sinusoidal base current, 375, 382 Sinusoidal base-emitter voltage, 375 Sinusoidal collector current, 382 Sinusoidal input signal, 582 Sinusoidal signal source, 373 Sinusoidal source, 206 Slew rate, 1026–1029 Small geometry effects n-channel MOSFET, 1150 p-channel MOSFET, 1170 Small reverse-biased gate voltage, 181 Small signal, 206, 374, 375 Small-signal, 370 Small-signal amplifier, 168–169 Small-signal analysis, 371 Small-signal analysis - active load circuits, 726–734 advanced MOSFET active load, 732–733 BJT active load circuit, 727–730 MOSFET active load circuit, 730–732 Small-signal BJT, 561 Small-signal collector current, 379 Small-signal current gain, 391, 426–431, 431–433, 504 Small-signal differential-mode voltage gain, 793 Small-signal equivalent circuit, 47, 258–260, 378, 399 Small-signal equivalent circuit bipolar differential amplifier, 763 Small-signal hybrid-π equivalent circuit, 378–381 Small-signal hybrid-π model of npn bipolar transistor, 381 Small-signal incremental conductance, 45 Small-signal incremental resistance, 45 Small-signal input resistance, 391 Small-signal output admittance, 391 Small-signal output resistance, 211 Small-signal power gain, 442 Small-signal transconductance, 236 Small-signal transistor output resistance, 385 Small-signal voltage, 431–433 Small-signal voltage gain, 381–384, 420–423 Snapback breakdown, 145 SOA, 563 Solar cell, 48–49 Sound wave, 206, 370 Source follower, 227 Source-follower amplifier, 227–233, 238 Source regulation, 88, 89 Source-substrate-drain structure, 145 Source terminal, 128 Space-charge region, 24 1369 Speedup diode, 1295 SPICE, 41 Squaring network, 1292 SRAM, 1209, 1212–1220 SRAM read/write circuitry, 1218–1220 Stability of feedback circuit, 908–918 Bode plot, 909–912 gain margin, 917 Nyquist stability criterion, 913–916 phase margin, 916 stability problem, 908–909 Stability problem, 908–909 Stabilize, 335 Standard class-A amplifier, 572 Standard resistor and capacitor values, 1329–1331 capacitors, 1331 carbon resistors, 1329–1330 precision resistors (1% tolerance), 1329–1330 Static CMOS logic circuit, 1183 Static CMOS logic gate, 1232–1234 Static ECL gate, 1298–1299 Static NMOS RAM cells, 1212 Static RAM (SRAM), 1209, 1212–1220 Storage time, 33 Subthreshold conduction, 144 Subthreshold current, 144 Summing amplifier, 636–638 Summing op-amp amplifier circuit, 636 Summing op-amp circuit design, 659–661 Sunrayce car, 49 Superposition principle, 371, 636, 1085 Switch/switching, 165–166, 323–325 Switched-capacitor circuit, 1072 Switched-capacitor filter, 1070–1074 Switching time, 1144 Switching transient, 32–33 Symmetrical sinusoidal signals, 415 Symmetrical swing, 415–420 System design, 616–617 System transfer functions, 472–485 Bode plots, 474–479 first-order functions, 473–474 s-domain analysis, 472–473 short-circuit and open-circuit time constants, 480–483 time response, 483-485 T T-model, 396 T-network, 631–633 Taylor series, 374, 375 Temperature coefficient of offset voltage, 1045 Temperature compensation, 1121 Temperature effect, 145 Temperature effects, 1045–1046 Temperature warning light circuit, 617 THD, 560, 583 Thermal resistance, 567 Thermal voltage, 24 Thermometer bipolar transistor, 348–350 diode, 54–56 instrumentation amplifier, 665–668 MOS transistor, 190–192 Thevenin equivalent circuit, 217, 321, 333, 340, 396, 509 Thevenin equivalent resistance, 231, 321, 340 Thevenin equivalent voltage, 321, 340 Thevenin resistance, 399 3-bit flash A/D converter, 1229, 1230 db frequency, 475 Three-input CMOS NAND logic gate, 1187 Three-stage CMOS op-amp, 973–976 Three-terminal voltage regulator, 1122 nea80644_ndx_1359-1370.qxd 08/04/2009 06:22 PM Page 1370 F506 Tempwork:Dont' Del Rakesh:August 2009:Neaman:MHDQ134-IND: 1370 Index Three-transistor current mirror, 695 Three-transistor current source, 693–696 Threshold comparator, 1101 Threshold voltage, 130, 1150 Time constant, 480, 1096 Time constant technique, 488 Time response, 483–485 Time-varying base current, 373 Time-varying signal source, 207, 373 Timer circuit, 1105 Top-down design process, 615–616 Total average power, 580 Total base current, 443 Total collector current, 443 Total gate-to-source voltage, 206 Total harmonic distortion (THD), 560, 583 See also Harmonic distortion Total instantaneous collector-emitter voltage, 443 Total instantaneous power dissipation, 579 Total instantaneous value, 4, 208, 372 Totem-pole output stage, 1284–1285 Transconductance back-gate, 215 basic JFET amplifiers, 259, 262 calculation of, 208–209 composite, 802 defined, 208 forward, 760 OTA, 657–658 proportional to conduction parameter, 209 proportional to saturation current, 259 series-series amplifier, 886–892 small-signal, 236 small-signal analysis, 262 small-signal hybrid-π equivalent circuit, 379 unloaded, 657 Transconductance amplifier, 397, 870 Transconductance function, 472 Transducer, 663 Transfer functions See System transfer functions Transformer-coupled common-emitter amplifier, 588–589 Transformer-coupled emitter-follower amplifier, 589–591 Transformer turns ratio, 69 Transistor BJT See Bipolar junction transistor (BJT) common-emitter bipolar, 391 common-emitter npn, 391 enhancement-mode NMOS, 1222 EPROM, 1224–1225 FET See FET generally, 687 input buffer, 596–599 JFET, 180–190 matched, 950 MESFET, 182–190 MOSFET See MOSFET power, 560–571 Schottky, 1289–1291 Transistor circuit characteristics, 851 Transistor equivalent circuit, 304 Transistor sizing CMOS inverter, 1175–1176, 1184–1185 CMOS logic gates, 1185–1187 Transistor-transistor logic, 1277–1289 basic diode-transistor logic gate, 1277–1279 basic DTL NAND circuit operation, 1277–1279 basic TTL NAND circuit, 1282–1284 dc current-voltage analysis, 1282–1284 fanout, 1285–1286 input transistor, 1280–1282 minimum β, 1279 modified totem-pole output stage, 1287–1288 pull-down resistor, 1279 totem-pole output stage, 1284–1285 tristate output, 1288 Transition point, 154, 1149, 1169, 1172 Transmission gates, 1194–1202 CMOS, 1200–1201 CMOS pass networks, 1202 NMOS, 1194–1198 NMOS pass networks, 1198–1199 Transresistance (shunt-shunt amplifier), 833–901 Transresistance amplifier, 397, 872 Transresistance function, 472 Transresistance transfer function, 895 Trigger comparator, 1103 Triode region, 132 Tristate output, 1288 TTL See Transistor-transistor logic Turn-off time, 33 Turn-on time, 33 Turn-on voltage, 38 Turns ratio, 71, 589 Two-diode circuit, 99 Two-input BiCMOS NOR circuit, 1298 Two-input CMOS NAND logic circuit, 1184 Two-input CMOS NOR logic circuit, 1183 Two-input diode AND logic circuit, 105 Two-input diode OR logic circuit, 104 Two-input NMOS NOR logic gate, 167, 1163 Two-pole high-pass Butterworth filter, 1068 Two-pole low-pass Butterworth filter, 1065–1067 Two-port equivalent circuit, 403 Two-sided output, 761 BJT differential pair, 761, 769–770 FET differential pair, 787–788 Two-stage amplifier, 264–266 Two-stage amplifier with coupling capacitors, 537–539 Two-stage CMOS op-amp, 992–995 Two-transistor current mirror, 695 Two-transistor current source, 343, 688–693 current relationships, 689 IC fabrication, 692 mismatched transistors, 692–693 output resistance, 690–691 Two-transistor MOSFET current source, 707–711 Two-transistor NMOS current source, 707 2N2222 bipolar transistor, 393–396 2N2222 npn bipolar transistor, 1318–1319 2N2907 pnp bipolar transistor, 1320–1321 U Ultraviolet (UV) light, 1224 Undefined range, 1179 Unity-gain bandwidth, 506, 516–518, 1024 Unity-gain frequency, 517 Unloaded transconductance, 657 Upper corner, 481 Uppercase letter/lowercase subscript, Uppercase letter/uppercase subscript, User-programmed ROM, 1222–1223 UV radiation, 1224 Voice communication, Volatile memory, 1209 Voltage ac collector-emitter, 373 ac ripple, 68n base-collector, 1259 breakdown, 52 collector-emitter, 1259 common-mode input, 648, 754 cut-in, 38 differential-mode input, 754, 760 diode breakdown, 52 drain-to-source, 130, 131 Early, 695 early, 296 gate-to-source, 130, 225 input offset, 1031 instantaneous gate-to-source, 258 NMOS shift register, 1204 pinchoff, 183 PIV, 32 quiescent drain-to-source, 225 quiescent gate-to-source, 236 ripple, 76–77 sinusoidal base-emitter, 375 small reverse-biased gate, 181 small-signal, 431–433 temperature coefficient of offset, 1045 thermal, 24 Thevenin equivalent, 321, 333, 340, 590 threshold, 130 total gate-to-source, 206 total instantaneous collector-emitter, 443 turn-on, 38 zero gate, 181 Voltage amplifier, 397, 873–879 Voltage divider biasing, 333–339 Voltage doubler circuit, 83–84 Voltage feedback ratio, 391 Voltage follower, 639–640 Voltage-follower op-amp circuit, 640 Voltage notation, 130n, 288n Voltage regulator, 84, 1114–1122 basic regulator description, 1114 defined, 1114 LM78LXX series three-terminal positive, 1119 output resistance/load regulation, 1115–1116 positive, 1119–1122 simple series-pass regulator, 1116–1118 three-terminal, 1122 Voltage transfer curve, 311, 582, 1171–1175 Voltage transfer function, 472 W Weighted-resistor 4-bit D/A converter, 1227–1228 Wide-swing current mirror, 713–714 Wide-swing MOSFET cascode current mirror, 714 Widlar current source, 698–704 Wien-bridge circuit, 1079–1082 Wilson current mirror, 713 Wilson current source, 697–698, 713 V Z VBE, 288n VBE multiplier, 590 Valence electron, 10 Varactor diode, 26 Velocity saturation, 142 Vertical process, 566 Virtual ground, 625, 628 Virtual short, 638 VMOS device, 566 z-transform technique, 1074 Zener breakdown, 32 Zener diode, 51–53 Zener diode circuit, 84–90 ideal voltage reference circuit, 85–88 Zener resistance/percent regulation, 88–90 Zener diode voltage regulator circuit, 85, 88 Zener resistance, 84 Zero gate voltage, 181 An accessible approach to learning through clear writing and practical pedagogy has become the hallmark of Microelectronics: Circuit Analysis and Design by Donald Neamen Now in its fourth edition, the text builds upon its strong pedagogy and tools for student assessment with key updates as well as revisions that allow for flexible coverage of op-amps FOURTH E DITION FOURTH EDITI ON Key Features of the Fourth Edition Flexible Presentation of Key Topics Revisions have given the text a level of flexibility such that ideal op-amps (Chapter 9) can be presented as the first topic in electronics; either MOS or Bipolar transistors can be studied as the first transistor type; and digital electronics can be covered before analog electronics This flexibility allows instructors to present topics in whatever order makes the most sense for their students The fourth edition features a substantial number of new problems This includes: over 45 percent new exercise and Test Your Understanding problems; over 45 percent new end-of-chapter problems; and over 70 percent new open-ended design problems and computer simulation problems In addition, coverage of circuit voltage levels and device parameters was updated to more closely match real world electronics Goal-Oriented Pedagogy A Preview section introduces each chapter and correlates with learning objectives that head each section Worked examples reinforce the theoretical concepts being developed; all examples are followed by exercises to immediately test learning Test Your Understanding problems are integrated at the end of each section to provide additional practice Problem solving techniques guide students Focus on Design in the Real World Students are taught good design by incorporating design exercises that help students get a feel for how the design process works in the real world Each chapter includes a Design Application that leads students through the design and development of an electronic thermometer The various characteristics and properties of circuits are explained as the student moves through the analysis Design Pointers appear in examples and throughout the text to help students with tricky design issues, and Design Problems are featured in most problem sets Computer Tools Because computer analysis and computer-aided design are significant factors in professional electronic design, the text contains a large number of new computer simulation problems These appear both throughout the chapter and at the end of each chapter Learning and Teaching Technologies The website for Microeletronics features tools for students and teachers Professors can benefit from McGraw-Hill’s COSMOS electronic solutions manual COSMOS enables instructors to generate a limitless supply of problem material for assignment, as well as transfer and integrate their own problems into the software In addition, the website boasts PowerPoint slides, an image library, the complete Instructor’s Solution Manual (password protected), data sheets, laboratory manual, and links to other important websites You can find the site at www.mhhe.com/neamen CIRCUIT ANALYSIS AND DESIGN MD DALIM #1035984 7/12/09 CYAN MAG YELO BLK through analyzing and solving a problem CIRCUIT ANALYSIS AND DESIGN New Problems and Text Updates NEAM EN DO N A LD A N E A M EN ... Cataloging-in-Publication Data Neamen, Donald A Microelectronics : circuit analysis and design / Donald A Neamen — 4th ed p cm Includes index ISBN 97 8-0 -0 7-3 3806 4-3 —ISBN 0-0 7-3 3806 4-4 (alk paper)... new end-of-chapter problems • Addition of over 50 new open-ended Design Problems in the end-of-chapter problems sections • Addition of over 65 new Computer Simulation Problems in the end-of-chapter... time” that the p- and n-regions are joined together 23 nea80644_ch01_0 7-0 66.qxd 06/08/2009 05:15 PM Page 24 F506 Tempwork:Dont' Del Rakesh:June:Rakesh 0 6-0 8-0 9:MHDQ13 4-0 1 Folder:MHDQ13 4-0 1: 24 Part