BS EN 60747-15:2012 BSI Standards Publication Semiconductor devices — Discrete devices Part 15: Isolated power semiconductor devices BRITISH STANDARD BS EN 60747-15:2012 National foreword This British Standard is the UK implementation of EN 60747-15:2012 It is identical to IEC 60747-15:2010 It supersedes BS EN 60747-15:2004 which is withdrawn The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors A list of organizations represented on this committee can be obtained on request to its secretary This publication does not purport to include all the necessary provisions of a contract Users are responsible for its correct application © The British Standards Institution 2012 Published by BSI Standards Limited 2012 ISBN 978 580 58410 ICS 31.080.99 Compliance with a British Standard cannot confer immunity from legal obligations This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 April 2012 Amendments issued since publication Amd No Date Text affected BS EN 60747-15:2012 EUROPEAN STANDARD EN 60747-15 NORME EUROPÉENNE March 2012 EUROPÄISCHE NORM ICS 31.080.99 Supersedes EN 60747-15:2004 English version Semiconductor devices Discrete devices Part 15: Isolated power semiconductor devices (IEC 60747-15:2010) Dispositifs semi-conducteurs Dispositifs discrets Partie 15: Dispositifs de puissance semiconducteurs isolés (CEI 60747-15:2010) Halbleiterbauelemente Einzel-Halbleiterbauelemente Teil 15: Isolierte Leistungshalbleiter (IEC 60747-15:2010) This European Standard was approved by CENELEC on 2011-01-20 CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member This European Standard exists in three official versions (English, French, German) A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom CENELEC European Committee for Electrotechnical Standardization Comité Européen de Normalisation Electrotechnique Europäisches Komitee für Elektrotechnische Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels © 2012 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members Ref No EN 60747-15:2012 E BS EN 60747-15:2012 EN 60747-15:2012 -2- Foreword The text of document 47E/403/FDIS, future edition of IEC 60747-15, prepared by SC 47E, "Discrete semiconductor devices", of IEC TC 47, "Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60747-15:2012 The following dates are fixed: – latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2012-09-16 – latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2014-01-20 This European Standard supersedes EN 60747-15:2004 The main changes with respect to EN 60747-15:2004 are listed below a) Clause 3, and were re-edited and some of them were combined to other sub clauses b) Clause 6, were re-edited as a part of “Measuring methods” with amendment of suitable addition and deletion c) Clause was amended by suitable addition and deletion d) Annex C, D and Bibliography were deleted Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights CENELEC [and/or CEN] shall not be held responsible for identifying any or all such patent rights Endorsement notice The text of the International Standard IEC 60747-15:2010 was approved by CENELEC as a European Standard without any modification In the official version, for Bibliography, the following notes have to be added for the standards indicated: IEC 60112 NOTE Harmonized as EN 60112 IEC 61287-1:2005 NOTE Harmonized as EN 61287-1:2006 (not modified) BS EN 60747-15:2012 EN 60747-15:2012 -3- Annex ZA (normative) Normative references to international publications with their corresponding European publications The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application For dated references, only the edition cited applies For undated references, the latest edition of the referenced document (including any amendments) applies NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies Publication Year Title EN/HD Year IEC 60270 - High-voltage test techniques - Partial discharge measurements EN 60270 - IEC 60664-1 2007 Insulation coordination for equipment within low-voltage systems Part 1: Principles, requirements and tests EN 60664-1 2007 IEC 60721-3-3 1994 Classification of environmental conditions Part 3: Classification of groups of environmental parameters and their severities - Section 3: Stationary use at weatherprotected locations EN 60721-3-3 1995 IEC 60747-1 2006 Semiconductor devices Part 1: General - - IEC 60747-2 - Semiconductor devices - Discrete devices and integrated circuits Part 2: Rectifier diodes - IEC 60747-6 - Semi conductor devices Part 6: Thyristors - - IEC 60747-7 - Semiconductor devices Part 7: Bipolar transistors - - IEC 60747-8 - Semiconductor devices Part 8: Field-effect transistors - - IEC 60747-9 - Surface mounting technology - Discrete devices Part 9: Insulated-gate bipolar transistors (IGBTs) - - IEC 60749-5 - Semiconductor devices - Mechanical and climatic test methods Part 5: Steady-state temperature humidity bias life test EN 60749-5 - IEC 60749-6 - Semiconductor devices - Mechanical and climatic test methods Part 6: Storage at high temperature EN 60749-6 - IEC 60749-10 - Semiconductor devices - Mechanical and climatic test methods Part 10: Mechanical shock EN 60749-10 - IEC 60749-12 - Semiconductor devices - Mechanical and climatic test methods Part 12: Vibration, variable frequency EN 60749-12 - BS EN 60747-15:2012 EN 60747-15:2012 -4- Publication IEC 60749-15 Year - Title EN/HD EN 60749-15 Semiconductor devices - Mechanical and climatic test methods Part 15: Resistance to soldering temperature for through-hole mounted devices Year - IEC 60749-21 - Semiconductor devices - Mechanical and climatic test methods Part 21: Solderability EN 60749-21 - IEC 60749-25 - Semiconductor devices - Mechanical and climatic test methods Part 25: Temperature cycling EN 60749-25 - IEC 60749-34 - Semiconductor devices - Mechanical and climatic test methods Part 34: Power cycling EN 60749-34 - –2– BS EN 60747-15:2012 60747-15 Ó IEC:2010 CONTENTS Scope Normative references Terms and definitions Letter symbols 4.1 4.2 4.3 General Additional subscripts/symbols List letter symbols 4.3.1 Voltages and currents 4.3.2 Mechanical symbols 4.3.3 Other symbols Essential ratings (limiting values) and characteristics 5.1 5.2 General Ratings (limiting values) 5.2.1 Isolation voltage (V isol ) 5.2.2 Peak case non-rupture current (I RSMC or I CNR ) (where appropriate) 5.2.3 Terminal current (I tRMS) (where appropriate), 5.2.4 Total power dissipation (P tot ) 5.2.5 Temperatures 5.2.6 Mechanical ratings 10 5.2.7 Climatic ratings (where appropriate) 10 5.3 Characteristics 10 5.3.1 Mechanical characteristics 10 5.3.2 Parasitic inductance (L p) 11 5.3.3 Parasitic capacitances (C p) 11 5.3.4 Partial discharge inception voltage (V iM or V i(RMS) ) (where appropriate) 11 5.3.5 Partial discharge extinction voltage (V eM or V e(RMS) ) (where appropriate) 11 5.3.6 Thermal resistances 11 5.3.7 Transient thermal impedance (Z th ) 12 Measurement methods 12 6.1 Verification of isolation voltage rating between terminals and base plate (V isol ) 12 6.2 Methods of measurement 13 6.2.1 Partial discharge inception and extinction voltages (V i ) (V e) 13 6.2.2 Parasitic inductance (L p ) 13 6.2.3 Parasitic capacitance terminal to case (C p ) 15 6.2.4 Thermal characteristics 16 Acceptance and reliability 18 7.1 7.2 7.3 7.4 General requirements 18 List of endurance tests 19 Acceptance defining criteria 19 Type tests and routine tests 19 7.4.1 Type tests 19 7.4.2 Routine tests 20 Annex A (informative) Test method of peak case non-rupture current 21 BS EN 60747-15:2012 60747-15 Ó IEC:2010 –3– Annex B (informative) Measuring method of the thickness of thermal compound paste 24 Bibliography 25 Figure – Basic circuit diagram for isolation breakdown withstand voltage test (“high pot test”) with V isol 12 Figure – Circuit diagram for measurement of parasitic inductances (L p ) 14 Figure – Wave forms 15 Figure – Circuit diagram for measurement of parasitic capacitance C p 16 Figure – Cross-section of an isolated power device with reference points for temperature measurement of T c and T s 17 Figure A.1 – Circuit diagram for test of peak case non-rupture current ICNR 21 Figure B.1 – Example of a measuring gauge for a layer of thermal compound paste of a thickness between mm and 150 mm 24 Table – Endurance tests 19 Table – Acceptance defining characteristics for endurance and reliability tests 19 Table – Minimum type and routine tests for isolated power semiconductor devices 20 –6– BS EN 60747-15:2012 60747-15 Ó IEC:2010 SEMICONDUCTOR DEVICES – DISCRETE DEVICES – Part 15: Isolated power semiconductor devices Scope This part of IEC 60747 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices Normative references The following referenced documents are indispensable for the application of this document For dated references, only the edition cited applies For undated references, the latest edition of the referenced document (including any amendments) applies IEC 60270, High-voltage test techniques – Partial discharge measurements IEC 60664-1:2007, Insulation coordination for equipment within low-voltage systems – Part 1: Principles, requirements and tests IEC 60721-3-3:1994, Classification of environmental conditions – Part 3-3: Classification of groups of environmental parameters and their severities – Stationary use at weather protected locations IEC 60747-1:2006, Semiconductor devices – Part 1: General IEC 60747-2, Semiconductor devices – Discrete devices and integrated circuits – Part 2: Rectifier diodes IEC 60747-6, Semiconductor devices – Part 6: Thyristors IEC 60747-7, Semiconductor discrete devices and integrated circuits – Part 7: Bipolar transistors IEC 60747-8, Semiconductor devices – Part 8: Field-effect transistors IEC 60747-9, Semiconductor devices – Discrete devices – Part 9: Insulated-gate bipolar transistors (IGBTs) IEC 60749-5, Semiconductor devices – Mechanical and climatic test methods – Part 5: Steady-state temperature humidity bias life test IEC 60749-6, Semiconductor devices – Mechanical and climatic test methods – Part 6: Storage at high temperature IEC 60749-10, Semiconductor devices – Mechanical and climatic test methods – Part 10: Mechanical shock IEC 60749-12, Semiconductor devices – Mechanical and climatic test methods – Part 12: Vibration, variable frequency BS EN 60747-15:2012 60747-15 Ó IEC:2010 –7– IEC 60749-15, Semiconductor devices – Mechanical and climatic test methods – Part 15: Resistance to soldering temperature for through-hole mounted devices IEC 60749-21, Semiconductor devices – Mechanical and climatic test methods – Part 21: Solderability IEC 60749-25, Semiconductor devices – Mechanical and climatic test methods – Part 25: Temperature cycling IEC 60749-34, Semiconductor devices – Mechanical and climatic test methods – Part 34: Power cycling Terms and definitions For the purposes of this document, the following terms and definitions apply 3.1 isolated power semiconductor device semiconductor power device that contains an integral electrical insulator between the cooling surface or base plate and any isolated circuit elements 3.2 Constituent parts of the isolated power semiconductor device 3.2.1 switch any single component that performs a switching function in a electrical circuit, e.g diode, thyristor, MOSFET, etc NOTE A switch might be a parallel or series connection of several chips with a single functionality 3.2.2 base plate part of the package having a cooling surface that transfers the heat from inside to outside 3.2.3 main terminal terminal having a high potential of the power circuit and carrying the main current The main terminal can comprise more than one physical connector 3.2.4 control terminal terminal having a low current capability for the purpose of control function, to which the external control signals are applied or from which sensing parameters are taken 3.2.4.1 high voltage control terminal terminal electrically connected to an isolated circuit element, but carrying only low current for control function NOTE Examples include current shunts and collector sense terminals having the high potential of the main terminals 3.2.4.2 low voltage control terminal terminal having a control function and isolated from the high voltage control terminals NOTE Examples include the terminals of isolated temperature s ensors and is olated gate driver inputs etc BS EN 60747-15:2012 60747-15 Ó IEC:2010 – 13 – A = ammeter or current probe for I isol H …H n = high potential terminal The voltage source G is capable to supply the isolation voltage V isol as the a c or d c voltage with a high internal impedance to limit the possible breakthrough current in case of breakdown of the DUT All main terminals and high voltage control terminals are connected together and connected to the high potential output terminal H of the voltage source G The base plate of the DUT, respectively its metallized cooling surface and all low voltage terminals are connected to ground potential E An amperemeter or current probe A is applied to measure the isolation leakage current – Test procedure Switch S is closed and the voltage is slowly raised to the specified value and maintained at that value for the specified time The current measured on ammeter A shall not exceed the specified value The voltage is then reduced to zero – Specified conditions Specified in IEC 60664-1:2007 · Ambient or case temperature · V isol · I isol as maximum test limit · Test time t, if less than 60 s 6.2 Methods of measurement 6.2.1 Partial discharge inception and extinction voltages (V i) (V e) Between high potential terminals and base plate (where appropriate) See IEC 60270 and IEC 60664-1:2007 6.2.2 – Parasitic inductance (L p ) Purpose To measure the parasitic inductance between two main terminals – Circuit diagram See Figure below BS EN 60747-15:2012 60747-15 Ó IEC:2010 – 14 – + T3 D3 C1 DUT T1 Lp1 D1 G1 G C v CE Ex1 E1/C2 T2 LL D2 G2 Ex2 Lpn E2 - iDUT IEC 2977/10 Figure – Circuit diagram for measurement of parasitic inductances (L p) Key DUT = devic e under test T1+T2, for example IGBT (Single or Dual – shown – or branch of a three phas e arrangement), fast diode or MOSFET devic e C = main capacitor bank as res ervoir LL = load inductanc e, at least 100 times the parasitic inductanc e L p1 …L pn = portions of parasitic inductanc e L p IDUT = current probe G = voltage s ource to charge the c apacitor T1 = DUT, top switch (shown as IGBT in Figure 2) T2 = DUT, bottom switch (shown as IGBT in Figure 2), optional T3 = auxiliary IGBT switch BS EN 60747-15:2012 60747-15 Ó IEC:2010 – 15 – VCC V, I vCE Vstep t1 t2 t diDUT/dt iDUT IEC 2978/10 Figure – Wave forms – Circuit description and requirements The circuit of Figure consists of a DC supply G for the charge reservoir C; T is an auxiliary switch, a gate drive unit for T 3, the DUT inserted into the test set-up with the gate control terminals shorted, a dual channel oscilloscope, which senses the voltage V CE between main terminals “C 1” and “E 2“, a current probe, which senses the current I DUT through the diode path of the DUT, connected to the dual channel oscilloscope This measuring method uses reduced voltage V CC and the di/dt of diodes incorporated in the device at switch-off, sensing the voltage at outside main terminals This is usable for single switch devices as well as for half bridge circuit devices (DUAL modules) – Measurement procedure A pulsed current method is used Auxiliary transistor T switches the load current to the inductor L L on and off When T is off, the current freewheels via the diodes of the DUT When T switches on again, it causes the current through the diodes to fall at an almost linear rate diDUT /dt During this time (t –t 2), the voltage across the DUT forms at step of Vstep caused by the internal parasitic inductance at current decline (di DUT /dt) The value of the parasitic inductance of the main current path can be calculated from L p = Vstep / |(di DUT /dt)| NOTE 6.2.3 – (1) Use low inductanc e (sheeted) bus baring and low inductance current probe Parasitic capacitance terminal to case (C p ) Purpose To measure the parasitic capacitance C p between specified main terminal(s) and the case (base plate) – Circuit diagram See Figure below BS EN 60747-15:2012 60747-15 Ó IEC:2010 – 16 – H DUT … I1 V1 CM V2 I2 Cp Base plate IEC 2979/10 Figure – Circuit diagram for measurement of parasitic capacitance (C p ) – Circuit description and requirements Cp = parasitic capacitance H = high potential terminal CM = capacitance meter – Measurement procedure Mount the device to a grounded heat sink according to the manufacturer’s mounting instructions Connect the current source connector “I 1” of the capacitance meter CM to the specified terminal and connector “I ” to ground (base plate) of the DUT Connect the voltage sensing connector of the capacitance meter to test points “V 1” and “V ” to ground CM is set to the specified frequency The capacitance C p can be read on CM For the measurement of the total coupling capacitance C p connect all main terminals to each other and proceed with the measurement like described above – Specified conditions · Measurement frequency f of the CM 6.2.4 6.2.4.1 – Thermal characteristics General description of measuring methods Purpose To measure thermal characteristics between the switch and the cooling system – Reference points for temperature measurement and description Same methods should be used as for the corresponding non-isolated device Thermal resistance and impedance are measured in the same way as described in the documents for diodes IEC 60747-2, thyristors IEC 60747-6, bipolar transistors IEC 60747-7, FETs IEC 60747-8 and IGBTs IEC 60747-9 BS EN 60747-15:2012 60747-15 Ó IEC:2010 – 17 – Chip Chip n DUT TsX Tj1 Tj2 Tjn Isolation layer Base plate Thermal interface material Specified distance External heat sink Tc1 Tc2 Tsn IEC 2980/10 Key T j1…n = junction temperature of chip to n T c1…n = case temperature under chip to n T s1 n = heatsink temperature under chip to n T sX = heatsink temperature at a specified surface point Figure – Cross-section of an isolated power device with reference points for temperature measurement of T c and T s – Measurement procedure T c is measured by a temperature measuring instrument from underneath through a small hole through the heat sink and any thermal interface material underneath the switch (chip) T s is taken from above at hottest accessible point, nearest to the switch (chip) or from underneath through a specified sack hole ending at (+/-1) mm below the heat sink surface (to be specified, type test feature) T j is determined using indirect methods like described in the individual documents NOTE The thermal resistance R th(j -s ) and R th(c-s) depends on several mechanic al parameters such as type and thickness of the used thermal interfac e material (should be specified in manufacturer’s mounting instructions, for example 30 to 50mm), the max deviation of flatness of the cooling surface of the device’s bas e plate and of the heat sink and the mounting torque of the fixing screws, as per specified mounting instructions 6.2.4.2 Thermal resistance junction to case per switch R th(j-c) R th(j-c) = (T j - T c )/P (2) where Tj is the virtual junction temperature of the switch; Tc is the temperature of the case (base plate) under the switch (chip); P is the power dissipation of a switch (see Figure 5) 6.2.4.3 Thermal resistance case to heat sink per switch (X) R th(c-s)X or per device R th(c-s) R th(c-s)(X) = (T c - T s )/P X where (3) – 18 – BS EN 60747-15:2012 60747-15 Ó IEC:2010 X is the D (Diode), I (IGBT); M (MOSFET) Tc is the temperature taken at the specified point of the case (as above) under the chip Ts is the temperature of the heat sink, taken at the reference point for testing T s specified PX is the complete power dissipation of the switch P is the power dissipation of the complete device – Specified conditions · Mounting according manufacturer’s instructions · Thermal conductivity of the thermal interface material · Reference points for thermal measurement NOTE See Annex B for Measuring method of the thickness of thermal interface material 6.2.4.4 Thermal resistance junction to heat sink per switch Rth(j-s) (for heat sink rated devices) R th(j-s) = (T j - T sn )/P (4) where Tj is the virtual junction temperature of the switch; T sn is taken at the specified reference point n at the heatsink (see Figure 5); P is the power dissipation of the switch – Specified conditions · Mounting according manufacturer’s instructions · Thermal conductivity of the thermal interface material · Reference points for thermal measurement 6.2.4.5 – Transient thermal impedance Z th Measurement circuit and procedure These are based on former Subclause 6.2.4.2 to 6.2.4.4 Individual documents of the noninsulated devices apply – Z th(j-c) = (|T j(0) - T c (0)| - |T j (t) - T c (t)|)/P (5) Z th(c-s) = (|T c (0) - T s (0)| - |T c (t) - T s (t)|)/P (6) Z th(j-s) = (|T j(0) - T s (0)| - |T j (t) - T s (t)|)/P (7) Specified conditions · Mounting according manufacturer’s instructions · Thermal conductivity of the thermal interface material · Reference points for thermal measurement 7.1 Acceptance and reliability General requirements In addition to the following subclauses, the requirements applicable to the non-isolated devices as given in the other relevant parts of IEC 60747 apply BS EN 60747-15:2012 60747-15 Ó IEC:2010 7.2 – 19 – List of endurance tests See Table Table – Endurance tests Subclause Environmental Testing – designation Short form Normative references 7.2.1 High temperature revers e bias or high temperature blocking HTRB IEC 60749-5 7.2.2 High humidity and high temperature reverse bias or high humidity and high temperature blocking H TRB IEC 60749-5 7.2.3 Power cycling (load) capability 7.2.4 High temperature storage HTS IEC 60749-6 7.2.5 Low temperature storage LTS IEC 60068-2-48 7.2.6 Thermal cycling TC IEC 60749-25; 7.2.7 Resistanc e to solder heat IEC 60749-15 7.2.8 Solderability IEC 60749-21 7.2.9 Mechanical shock IEC 60749-10 7.2.10 Vibration (variable frequenc y) IEC 60749-12 7.3 IEC 60749-34 Acceptance defining criteria Table – Acceptance defining characteristics for endurance and reliability tests Acceptance defining characteristic Acceptance criteria M easurement conditions Iisol < USL Specified V isol R th < USL Mounting instructions USL: upper specification limit 7.4 7.4.1 Type tests and routine tests Type tests The experience which has been obtained with other isolated power semiconductor devices, using the same or similar components such as switches or packages, should be considered when deciding which tests are mandatory Type tests are carried out on new products on a sample basis, in order to determine the electrical and thermal and mechanical and climatic ratings (limiting values) characteristics to be given in the data sheet and to establish the test limits for future routine tests Some or all of the tests should be repeated from time to time on samples drawn from current production or deliveries so as to confirm that the quality of the product continuously meets the requirements The minimum type tests to be carried out are as follows: _ Withdrawn in 2008 BS EN 60747-15:2012 60747-15 Ó IEC:2010 – 20 – New isolated power semiconductor devices should undergo the type tests listed in Table 3, marked with “X” (X = mandatory) Some of the type tests are destructive Table – Minimum type and routine tests for isolated power semiconductor devices Subclause 5.2.1 5.2.2 Type test Routine test X X Isolation voltage test V is ol Peak c ase non-rupture current IRSMC ; ICNR X Xa 5.3.1 outline dimensions, creepage, clearance X 5.3.1.4 flatness of bas e-plate or of cooling surface X 5.3.6 thermal resistances R th X 5.3.7 transient thermal impedance Z th X 5.3.2 parasitic inductanc e L p Xa 5.3.3 parasitic capacitanc e C p Xa 5.3.4/5 partial discharge voltages Xa 5.2.6.4 terminal pull out forc e X 7.2.6 c thermal cycling X 7.2.3 c power cycling (load) X 7.2.9/10 c mechanical tests X 5.2.7 climatic characteristics classification Destructive Xb Xb Xa NOTE Tests for isolation voltage, partial discharge voltage, creepage and clearance distanc e should be bas ed on each standard which should be applied to any final equipment using the isolated power semic onductor device For example see IEC 60950 (Saf ety information technology, IEC 61287 (rolling stock) etc a Type test only for devic es with specified maximum values b Routine test only for devic es with specified maximum or minimum values c See Table for normative references of test 7.4.2 Routine tests The routine tests should be carried out on the current production or deliveries normally on a 100 % basis The ratings and characteristics specified in the data sheet should be verified for each criterion or specimen Routine test may comprise a selection of the isolated devices into groups of routine tests in Table The minimum routine tests to be carried out on isolated devices are listed in Table Other routine tests are carried out as described in the other parts of the IEC 60747, which is valid for the particular switch BS EN 60747-15:2012 60747-15 Ó IEC:2010 – 21 – Annex A (informative) Test method of peak case non-rupture current – Purpose To prove the ability of the isolated power device containing bipolar transistors, IGBTs or MOSFETs as switches to withstand the rated peak case non-rupture current I CNR without causing a rupture (an ”explosion“) of the case or an emission of plasma beam or ejecting massive particles This is a destructive test NOTE Case rupture is caused by inside arc or vapour pres sure, when the supplied energy or current from outer source exc eeds the specified limit The arc or vapour pressure is induced in a package (encapsulation) of failed power devic es by being supplied with stored energy or curr ent from an outer circuit power source Critical curr ent or energy for packages after the devic e failure should be issued as an item of the package environmental properties, and in addition the semiconductor and also other electrical parts should avoid an explosion by accident – Circuit diagram See Figure A.1 below RS LS Ri C T1 RG GU1 VCC RC G1 Case D1 S1 G LLoad HE E C T2 C RG 0…3,5kV GU2 IL D2 G VGE S2 HE E A IEC 2981/10 Figure A.1 – Circuit diagram for test of peak case non-rupture current I CNR – Circuit description and requirements A = Ammeter to measure the device current which can be ICNR, if the case just did not burst, monitored by a current probe having low inductance C = line capacitor bank, chargeable to full voltage D1 = inverse diode of T , high side D2 = inverse diode of T , low side G1 = DC supply voltage source V CC, which can be switched off from mains under all conditions GU1 = gate drive unit of T _ still under discussion – 22 – GU2 = gate drive unit of T L Load = load inductance Ls = parasitic inductance of the circuit (40 nH to 250 nH ) Rc = discharge resistor for protection purposes RG = gate resistor Ri = internal source resistance Rs = fuse resistor, mostly set to zero S1 = auxiliary switch (IGBT), high side S2 = auxiliary switch (IGBT), low side T1 = high side IGBT switch = device under test (DUT) T2 = low side IGBT switch IL = load current V GE = gate voltage BS EN 60747-15:2012 60747-15 Ó IEC:2010 The set-up consists of a two-quadrant converter with two identical isolated IGBT devices S and S are auxiliary switches, for example IGBT devices, used to establish the desired load current and to induce a short circuit failure T and T are identical isolated IGBT devices (SINGLE switch or both in a half bridge circuit as DUAL switch) – Test procedure Test A: First, close switch S , turn on T 1, the load current increases as defined by load inductance L Load After I L have exceeded the safe operating area (SOA) for turn-off of T , it is attempted to turn off T The initial part of the turn-off process takes place, the current in the device is reduced and part of the current is commuted to the diode D The device T then undergoes a turn-off failure The diode in the low side device D2 carries substantial current at this instant The failure of T forces the diode D to turn off at virtually unlimited di/dt, drawn by L Load This is outside the diode SOA, and the diode D also fails Test B: T is turned on until a substantial load current is reached At this moment the device T is turned on It is induced to fail, because it sees the full voltage together with full current The device T then goes into desaturation and also fails (Top-bottom shoot-through- which creates a short circuit between plus bus bar and minus bus bar, discharging the capacitor bank, creating an arc in the devices This leads to production of gases of the surrounding plastic gel etc until the energy of the capacitor bank is used) In reality such a failure could be due to cosmic ray or due to thermal overload Manipulating the device can artificially induce it Tests C and further tests: These tests are executed until a value of stored energy of the capacitor bank and of peak current is found, which is not high enough to rupture or break the case The values of achieved peak current I C = I CNR, V CC , C max and of E C = ½ CV CC are monitored The value I CNR is the value of a percentage (10 % = 2/20) of a tested population (minimum 10 pieces) of devices, at which the case did not burst, or case split, but did not eject internal particles – Post test measurements and criteria The DUT is subjected to a visual test, whether cracks and signs of plasma from arcing inside are visible from outside There shall be no signs of particles thrown out nor shall there be evidence that the device has externally melted or burst into flames BS EN 60747-15:2012 60747-15 Ó IEC:2010 – 23 – NOTE The ejection of particles is unavoidable for energies higher than about 10 kJ W hat can be achieved b y good design is that no massive parts are ejected, which can caus e severe consequential damage – Specified conditions · Case or virtual junction temperature (T c = 25 °C, T vj = 25 °C or 125 °C) · Supply voltage V CC · Capacitance of capacitor bank C · Stored energy of capacitor bank E C · Parasitic inductance of short circuit L SC · Load current I L · Gate voltage V GEon and V GEoff · Gate resistance RGon and R Goff · Percentage of tested devices not burst to total number of tested devices NOTE Lit.: S Gekenides, et al.: Explosion Tests on IGBT High voltage Modules, ISPSD ’99 Toronto BS EN 60747-15:2012 60747-15 Ó IEC:2010 – 24 – Annex B (informative) Measuring method of the thickness of thermal compound paste The measuring gauge is a comb out of stainless steal or suitable plastic, which is not solvable by the fluid material of the thickness of layer to be tested The outer teeth of the comb – those at the edges of the hexagon in Figure B.1 - form a base line The inner teeth – those between the outer teeth - are progressively shortened, so that a space of distances is achieved between the teeth and the base line The size of the distance can be read on a scale on the instrument A typical measuring gauge is shown here in Figure B.1 IEC 2982/10 Figure B.1 – Example of a measuring gauge for a layer of thermal compound paste of a thickness between mm and 150 mm Measuring method Immediately after applying the layer, the measuring comb is pressed upon the substrate, so that the teeth are vertical to the surface and the measuring comb does not slip Remove the comb and look at the teeth to ensure that is the shortest tooth that still touched the fluid layer The thickness of the layer corresponds to the average mean value of the last touching tooth and the first non-touching tooth At least two further measurements at different parts on the surface are to be executed in same way to get representative values for the covered area BS EN 60747-15:2012 60747-15 Ó IEC:2010 – 25 – Bibliography IEC 60112, Method for the determination of the proof and the comparative tracking indices of solid insulating materials IEC 61287-1:2005, Railway applications – Power converters installed on board rolling stock – Part 1: Characteristics and test methods Lit.: S Gekenides, et al.: Explosion Tests on IGBT High voltage Modules, ISPSD ’99 Toronto _ This page deliberately left blank NO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAW British Standards Institution (BSI) BSI is the national body responsible for preparing British Standards and other standards-related publications, information and services BSI is incorporated by Royal Charter British Standards and other standardization products are published by BSI Standards Limited About us Revisions We bring together business, industry, government, consumers, innovators and others to shape their combined experience and expertise into standards -based solutions Our British Standards and other publications are updated by amendment or revision The knowledge embodied in our standards has been carefully assembled in a dependable format and refined through our open consultation process Organizations of all sizes and across all sectors choose standards to help them achieve their goals Information on standards We can provide you with the knowledge that your organization needs to succeed Find out more about British Standards by visiting our website at bsigroup.com/standards or contacting our Customer Services team or Knowledge Centre Buying standards You can buy and download PDF versions of BSI publications, including British and adopted European and international standards, through our website at bsigroup.com/shop, where hard copies can also be purchased If you need international and foreign standards from other Standards Development Organizations, hard copies can be ordered from our Customer Services team Subscriptions Our range of subscription services are designed to make using standards easier for you For further information on our subscription products go to bsigroup.com/subscriptions With British Standards Online (BSOL) you’ll have instant access to over 55,000 British and adopted European and international standards from your desktop It’s available 24/7 and is refreshed daily so you’ll always be up to date You can keep in touch with standards developments and receive substantial discounts on the purchase price of standards, both in single copy and subscription format, by becoming a BSI Subscribing Member PLUS is an updating service exclusive to BSI Subscribing Members You will automatically receive the latest hard copy of your standards when they’re revised or replaced To find out more about becoming a BSI Subscribing Member and the benefits of membership, please visit bsigroup.com/shop With a Multi-User Network Licence (MUNL) you are able to host standards publications on your intranet Licences can cover as few or as many users as you wish With updates supplied as soon as they’re available, you can be sure your documentation is current For further information, email bsmusales@bsigroup.com BSI Group Headquarters 389 Chiswick High Road London W4 4AL UK We continually improve the quality of our products and services to benefit your business If you find an inaccuracy or ambiguity within a British Standard or other BSI publication please inform the Knowledge Centre Copyright All the data, software and documentation set out in all British Standards and other BSI publications are the property of and copyrighted by BSI, or some person or entity that owns copyright in the information used (such as the international standardization bodies) and has formally licensed such information to BSI for commercial publication and use Except as permitted under the Copyright, Designs and Patents Act 1988 no extract may be reproduced, stored in a retrieval system or transmitted in any form or by any means – electronic, photocopying, recording or otherwise – without prior written permission from BSI Details and advice can be obtained from the Copyright & Licensing Department Useful Contacts: Customer Services Tel: +44 845 086 9001 Email (orders): orders@bsigroup.com Email (enquiries): cservices@bsigroup.com Subscriptions Tel: +44 845 086 9001 Email: subscriptions@bsigroup.com Knowledge Centre Tel: +44 20 8996 7004 Email: knowledgecentre@bsigroup.com Copyright & Licensing Tel: +44 20 8996 7070 Email: copyright@bsigroup.com