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Figure™1Topological insulator band structure and wavefunctions in bulk and ribbon.(a) Bulk topological insulator band structure, (b)™15thinspnm topological insulator ribbon band structure and (c) the magnitude of the four wavefunction components of the va
Device structure and simulation
Figure™2Schematic of a TI FET in the on-state and off-state.In the on-state, current is carried by edge states and back-scattering is almost negligible in wide ribbons. In the off-state the states are no longer localized on the edge and scattering between
Figure™3Boltzmann distributions.Boltzmann distribution for the first conduction band in a TI FET with Vgs=0.1thinspV (a) and Vgs=0.5thinspV (b), for Vds=0.1thinspV. The gate bias makes the charge density larger in the gate region (10-30thinspnm) compared
Figure™6Benchmarking the TI FET versus other devices.Switching delay versus energy for a 32-bit ALU determined using the methodology presented in ref. 47. The results for the smaller gap 2D TI FET with the 0.2thinspV supply voltage are indicated as TIFET
Figure™7Bulk topological insulator band structure calculated from first principles.. Band structure without spin-orbit coupling (a) and with spin-orbit coupling (b)
FischettiM. V.FuB.VandenbergheW. G.Theoretical study of the gate leakage current in sub-10-nm field-effect transistorsIEEE Trans. Electron. Devices60386238692013LiuH.Phosphorene: an unexplored 2d semiconductor with a high hole mobilityACS nano840334041201
We acknowledge the support of Nanoelectronics Research InitiativeCloseCurlyQuotes (NRICloseCurlyQuotes) Southwest Academy of Nanoelectronics (SWAN). The authors thank Kristof Moors, Christopher Hinkle, Robert Wallace, Luigi Colombo and Dmitri Nikonov for
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