The dependence of an acoustomagnetoelectic field on the temperature in a cylindrical quantum wire AlGaAs/GaAs

Theoretical results for the AME field is numerically evaluated, plotted and discussed for the specific CQWIP AlGaAs/GaAs. The result shows that the dependence of the AME field on the temperature of the system is nonlinear. These results are compared with those of normal bulk semiconductors and quantum well to show the difference.

40 Nguyen Van Hieu, Nguyen Quang Bau THE DEPENDENCE OF AN ACOUSTOMAGNETOELECTIC FIELD ON THE TEMPERATURE IN A CYLINDRICAL QUANTUM WIRE AlGaAs/GaAs Nguyen Van Hieu1, Nguyen Quang Bau2 University of Education - The University of Danang; nvhieu@ued.udn.vn College of Science - Hanoi National University; nguyenquangbau54@gmail.com Abstract - The acoustomagnetoelectric (AME) field in a cylindrical quantum wire with an infinite potential (CQWIP) is investigated theoretically in the presence of an external magnetic field (EMF) by using the quantum kinetic equation method We obtain the quantum kinetic equation for the distribution function of electrons interacting with internal and external acoustic phonons We calculate the AME current in a CQWIP and then receive analytical expressions for the AME field in the CQWIP in the presence of the EMF Theoretical results for the AME field is numerically evaluated, plotted and discussed for the specific CQWIP AlGaAs/GaAs The result shows that the dependence of the AME field on the temperature of the system is nonlinear These results are compared with those of normal bulk semiconductors and quantum well to show the difference Key words - cylindrical quantum wire; acoustomagnetoelectric field; electron-acoustic wave interaction; electron-acoustic phonon scattering; quantum kinetic equation Introduction When an acoustic wave propagates through a conductor, its momentum, and its energy, are attenuated by the electrons which may give rise to a current usually called the acoustoelectric current, in the case of an open circuit called acoustoelectric field The presence of an external magnetic field (EMF) applied perpendicular to the direction of the sound wave propagation in a conductor can induce another field, the so-called AME field Calculations of the AME field in bulk semiconductor [1-2] in both cases the weak and the quantized magnetic field regions have been investigated In recent years, the AME field in a superlattice structure and in a Graphene Nanoribbon have been extensively studied [3-4] However, the work obtained by using the Boltzmann kinetic equation method, thus, is limited to the case of the weak magnetic field region and the high temperature In the case of the quantized magnetic field (strong magnetic field) region and the low temperature, using the Boltzmann kinetic equation is not correct Therefore, we use quantum theory to investigate both the weak magnetic field and the quantized magnetic field region The essence of the AME effect is due to the existence of partial current generated by the different energy groups of electrons, when the total acoustoelectric (longitudinal) current in specimen is equal to zero When this happens, the energy dependence of the electron momentum relaxation time causes average mobilities of the electrons in the partial current, in general, to differ, if an EMF is perpendicular to the direction of the sound flux, the Hall currents generated by these groups will not compensate for one another, and a non-zero AME effect will result In low-dimensional systems, the energy levels of electrons become discrete and different from other dimensionalities [5] Under certain conditions, the decrease in dimensionality of the system for semiconductors can lead to dramatically enhanced nonlinearities [6] Thus the nonlinear properties, especially electrical and optical properties of semiconductor quantum wells (QWs), compositional superlattices (CSLs), doped superlattices (DSLs), quantum wires, and quantum dots (QDs) have attracted much attention in the past few years For example, calculations of the nonlinear absorption coefficients of an intense electromagnetic wave by using the quantum kinetic equation for electrons in bulk semiconductors [7], in quantum wires [8] have also been reported Throughout [7-8], the quantum kinetic equation method have been seen as a powerful tool So, in a recent work [9-10] we have used this method to calculate the quantum AME field in the QW and the quantum acoustoelectric in the QW The present work is different from previous works [1-4] because: (1) the AME field is a result of not only the electron-external acoustic wave interaction but also the electron-acoustic phonon scattering in the sample; (2) we use the quantum kinetic equation method; (3) we show that the dependence of AME field on the temperature T of the CQWIP is nonlinear This paper is organized as follows In Section 2, starting from the Hamiltonian of the electron-external phonon interaction and electron-acoustic phonon scattering system in a CQWIP, we use the quantum kinetic equation method to obtain the quantum kinetic equation for electron in CQWIP in the presence of an EMF Solving the equation, we obtain the solution of the quantum kinetic equation for electrons in CQWIP We calculate the AME current in a CQWIP and then receive analytical expressions for the AME field in the CQWIP in the presence of the EMF In Section we discuss the results, and in Section we come to conclusions The analytic expression for the AME field in a CQWIP We consider a CQWIP structure of the radius R and length L with an external magnetic field Due to the confined potential, the motion of electrons in the Oz direction is free, while the motion in the (x-y) is plane quantized into discrete energy levels called subbands The electron energy spectrum in the CQWIP in the presence of an EMF is expressed as  NB , n,l , p  z pz2 n l  ANn,l , ANn,l  c ( N    ), 2m 2 where m is the effective mass of the electron, c is the cyclotron frequency, l = 1,2,3, is the radial quantum number, N = 0,1,2, is the index of the Landau, n = 0, 1, 2, is the azimuth quantum number, L is the length of the CQWIP, p  (0, 0, pz ) is the electron's momentum vector along z-direction In the presence of an external acoustic wave with frequency q , the Hamiltonian of the electron- ISSN 1859-1531 - THE UNIVERSITY OF DANANG, JOURNAL OF SCIENCE AND TECHNOLOGY, NO 12(121).2017 external phonon interaction and electron-acoustic phonon scattering system in a CQWIP in second quantization representation can be written as  H  NB , n,l , p aN , n,l , p aN , n,l , p   k bk bk z z z N , n , l , pz k   I N ', n ', l ' N , n ,l Ck J  N , N ' N , n , l , pz  k a aN , n ,l , pz (bk  bk ) (1) We consider a situation whereby the sound is propagating along the Ox axis and the magnetic field B is parallel to the Oz axis and we assume that the sample be opened in all directions so that ji = Therefore, we obtain the expression of the AME field, which appears along the Oy axis of the sample N , n , l , N ', n ', l ', k , pz   U N ', n ', l ' N , n ,l E AME  b exp(iq t )  q N , n ,l , pz  q N , n ,l , pz q Ca a N , n , l , N ', n ', l ', q , pz where Ck is the electron - internal phonon interaction factor, Cq  ivl2 q3 /  2 FS  is the electron - external phonon interaction factor,  is the deformation potential constant, aN , n,l , p (aN ,n,l , p ) is the creation (annihilation) z z operator of the electron; bk (bk ) is the creation 41  zy    zy   yy   zz   zz   yz  x  yy   zy (6) Eq (6) is the general expression to calculate the AME field in a CQWIP in the case of the relaxation time of carrier  ( ) depends on carrier energy By using the expression of the Eqs 3-6 and carrying out manipulations, we derive the expression for the AME field in a CQWIP in the presence of an EMF as follows c   2e m (a1  c2 a3 )  c2 a22  (annihilation) operator of internal phonon and bq is the E AME  annihilation operator of the external phonon, (b1  c1 )(a2  c a3 )  (b2  c2 )(a1   a )  l  (1  vs2 / vl2 )1/2 ,  t  (1  vs2 / vt2 )1/2 , vl (vt) is the here, velocity of the longitudinal (transverse) bulk acoustic wave, U NN,,nn,,ll is the matrix element of the operator ag  U = exp(iqy - klz) (kl = (q2 – (ωq/vl)2)1/2) To set up the quantum kinetic equation for electrons in the presence of an ultrasound, we use equation of motion of statistical average value for electrons bg    aN , n ,l , pz aN , n ,l , pz t t where the notation X average of aN , n,l , pz aN , n,l , pz t t   aN , n ,l , pz aN , n ,l , pz , H  (2) mean the usual thermodynamic the  f N , n,l , pz (t ) X, operator and is the particle number operator or the electron distribution function Using the Hamiltonian of the electron-external phonon interaction and electron-acoustic phonon scattering system in a CQWIP in second quantization replaced into the equation of motion of statistical average value for electrons and realizing operator algebraic calculations, the acoustic wave will be considered as a packet of coherent phonons We obtain the quantum kinetic equation for electrons in the single (constant) scattering time approximation in CQWIP in the presence of an EMF, and then we have the equation for the partial current density j   N , n ,l , p z e pz f N ,n,l , pz  (   N ,n,l , pz ) , and we m find the density of AME current in the presence of an EMF in CQWIP ji  ij E j  (ij  ij ) j , where  ij is the electrical conductivity tensor,  ij and  ij are the acoustic conductivity tensors, respectively ij  b1 ij  C b2 ijk hk  C2 b3 hi h j   ij  c1 ij  C c2 ijk hk  C2 c3hi h j  ij  (3)  e2 n0 a1 ij  C a2 ijk hk  C2 a3hi h j  m (7) c F  q (1   l2 ) / 2 t   l /  t   (1   t2 ) / 2 t  i (4) (5)  f m2  g ( ) (  ANn ,l ) d  ,   n0  c2 ( )    g ( ) f A1d  , 2   c  ( )   g ( ) f0 A2 d  , 2   c  ( ) cg   e  k BT A1  4 k  vs LS    I nn,',l l ' J NN ' (u ) n ,l N   2mA  n , l , n ', l ', N , N '    ( 1      2mANn ,l )3  (       2mANn,l )3 , A2  8e  vsq2  FS   U nn,',l l '   2mA  n ,l N  n , l , n ', l ', N , N '   q{ (q  2m( nN,l, N, n '',l '  k  q ))  q   (q  2m( nN,l, N, n '',l '  k  q ))}, and 1  2m(nN,l, N, n'',l '  ANn,l  k ) , 2  2m(nN,l, N,n'',l '  ANn,l  k ) , nN,l, N, n'',l '  ANn,l  ANn ',' l ' From Eq (7), we can see that the dependence of the AME field on the intensity B of the EMF, the radius R of the CQWIP, the temperature of the system T and the external acoustic wave of frequency are nonlinear These results are different compared to those obtained in bulk semiconductor [1,2], the quantum well [9] Numerical results and discussion In order to clarify the results that have been obtained, in this section, we consider the AME field in a CQWIP This quantity is considered as a function of the external magnetic field B, the frequency of ultrasound, the temperature T of system, and the parameters of the CQWIP AlGaAs/GaAs The parameters used in the numerical calculations are as follows [8-10]: 0=10-12s, =104Wm-2, =5,3×103kg/m3,  =20,8×10-19J, vl= 2,0 × 103 m/s, vt = 1,8 × 103 m/s 42 Nguyen Van Hieu, Nguyen Quang Bau at R = 30 nm In contrast, Figure shows that the peaks move to the higher temperature when the external magnetic field increases because the condition for peaks to appear not depend on the radius but depend on the external magnetic field Therefore, we can use these conditions to determine the peak position at the different values of the external magnetic field or the parameters of the CQWIP From the numerical result, we have a maximum value of the AME field of approximately 2.7 V/m at T=15 K, B=2.0 (T) and 3.3 V/m at T=18 K, B=2.2 (T) This means that the condition is determined mainly by the electrons energy Figure Dependence of the AME field on the temperature at different values of the radius R=35 nm (dashed line), R=30 nm (solid line) Here B=2.0T Figure Dependence of the AME field on the temperature at different values of the external magnetic field B=2.0T (dashed line), B=2.2T (solid line) Here R=30 nm Figure and Figure investigate the dependence of AME field on the temperature T for the case of the low temperature at different values of the radius of the CQWIP and the external magnetic field, respectively (in case of the quantized magnetic region), which have many distinct maxima The result shows the different behaviour from results in bulk semiconductor [1-2], the quantum well with a parabolic potential (QWPP) [9] Different from the bulk semiconductor and QWPP, these peaks in this case are much sharper In addition, Figure shows that the positions of the maxima nearly not move as the radius of CQWIP is varied It reaches a maximum value at T of about 15 K with the intensity of the EMF B = 2.0 T, the AME field of approximately 2.1 V/m at the radius R = 35 nm and 2.8 V/m Conclusion In summary, we have obtained analytical expressions for the AME field in the CQWIP There is a strong dependence of AME field on the acoustic wave number q, the frequency of external acoustic wave, the radius R of the CQWIP, the temperature T of system, the cyclotron frequency of the EMF and the intensity of the EMF The result show that there are many distinct maxima in the quantized magnetic field region and the sound waves traveling in parallel to the EMF and it reaches the maximum value then The result of the numerical calculation is done for the CQWIP AlGaAs/GaAs This result has shown that the dependence of the AME field on the temperature has the peaks move to the smaller temperature when the magnetic field increases We want to emphasize that the condition for the positions of the peaks to appear in the dependence of AME field on the intensity of the EMF in CQWIP is not dependent on the temperature T This result shows the difference from the results obtained in normal bulk semiconductors [1-2] and in quantum well [9] These are important results of the present work Acknowledgments This work is funded by Ministry of Education and Training of Viet Nam under Grant number B2016.DNA13 REFERENCES [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] G M Shmelev, G I Tsurkan, N Q Anh, Phys Stat Sol 121 (1984) 97 M Kogami,Sh Tanaka, J Phys Soc Japan (1970) 775 S Y Mensah, 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of coherent phonons We obtain the quantum kinetic... traveling in parallel to the EMF and it reaches the maximum value then The result of the numerical calculation is done for the CQWIP AlGaAs/GaAs This result has shown that the dependence of the AME