... if vgs(i) < vt
cur(i,j)=0;
elseif vds(j) >= (vgs(i) - vt)
cur(i,j)=kn * (vgs(i) - vt)^2;
elseif vds(j) < (vgs(i) - vt)
cur(i,j)= kn*(2*(vgs(i)-vt)*vds(j) - vds(j)^2);
end ... obtained using MATLAB.
Example 12.6
For an n-channel enhancement-type MOSFET with
kmAV
n
=
1
2
/
and
VV=
15.,
use MATLAB to sketch the I -V characteristics for
VV
GS
=
46 8,,
a...
... =+
(10 .44 )
where
V
kT
q
T
=
and
V
E
q
g
g
=
For silicon at room temperature,
V
V
g
T
=
44 4
Thus
dI
dT
V
V
dT
T
dT
T
S
g
T
=+ =
() . 347 4
(10 .45 )
At room temperature ... = 1.0e 14;
nisq = 1.04e20;
q = 1.602e-19;
k = 1.38e-23;
% calculate contact potential
vc = (k*t/q)*(log(na*nd/nisq))
vs = -1.0:0.1:0.7;
jct_pot = vc - vs;
% plot curve
p...
... =+
(10 .44 )
where
V
kT
q
T
=
and
V
E
q
g
g
=
For silicon at room temperature,
V
V
g
T
=
44 4
Thus
dI
dT
V
V
dT
T
dT
T
S
g
T
=+ =
() . 347 4
(10 .45 )
At room temperature ... depletion capacitance from -3 0V to 0. 4V.
Solution
From Equation (10.55)
C
C
V
V
j
j
S
C
m
1
0
1
1
=
−
[]
C
C
V
V
j
j
S
C
m
2
0
2
1
=
−
[]
therefore
C
C
V...