Liquid phase epitaxial growth and fabrication of gallium phosphide green light emitting diodes

... and fabrication of piezoelectric MEMS inkjet (1st version-InkjetVer1) done in our STD Lab, the computer simulation and validation of inkjet have been investigated, and then the 2nd version (InkjetVer2) ... background of piezoelectricity, types of piezoelectric MEMS inkjet head and general principle of numerical simulation 1.1 Piezoelectricity 1.1.1 Pie...

Ngày tải lên: 10/04/2013, 13:48

... Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors Jianxin Chen*1, Qingqing Xu1, Yi Zhou1, Jupeng Jing1, Chun Lin1, and Li He1 Key Laboratory of Infrared ... Razeghi M: Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs In Proceedings of the Active and Passive Optical Components for WDM Com...

Ngày tải lên: 18/06/2014, 22:20

... Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors Jianxin Chen*1, Qingqing Xu1, Yi Zhou1, Jupeng Jing1, Chun Lin1, and Li He1 Key Laboratory of Infrared ... lihe@mail.sitp.ac.cn Abstract We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors The supe...

Ngày tải lên: 20/06/2014, 04:20

... Effect of triplet multiple quantum well structures on the performance of blue phosphorescent organic light- emitting diodes Seokjae Lee†1, Jaryong Koo†1, Gunwoo Hyung†1, Donghwan Lim1, Donghyung ... the other devices due to a relatively narrow emissive region Conclusions In conclusion, the present study reports on the high efficiency blue PHOLEDs based...

Ngày tải lên: 20/06/2014, 23:20

... Adatom to graphene charge transfer (e) Reference Hole 1. 27 2 .12 - 1. 31) - 81 Hole 1. 32 2.09 1. 56 1. 1 1. 1 83 Hole 0.97 - 1. 51 1.0 0.6 33 Hole 2.4 - 1. 52 1. 0 0.2 31 Hole 1. 58 2 .10 1. 49 1. 0 - 32 ... from the SiC bulk so that the (63x63)R30o of SiC(00 01) coincidence with 13 x13 of the graphene mesh Due to mismatch between the SiC(1x1) and graphene( 1x1)...

Ngày tải lên: 11/09/2015, 09:58

... time-dependence of adatoms density, n1 (cm-2s-1) on substrate is assumed to be of first-order† and is given as [13]:   dn1 n   F   2 1n1   i ni  2 2 n2   i ni dt  i 2 i 3 (2. 2) where ... atomistic model of nucleation in Eq (2. 8) can be applied to understand dynamics of surface nucleation and growth According to Eqs (2. 8) and (2. 8a), i* (or E) can be e...

Ngày tải lên: 11/09/2015, 09:58

... Chapter 3. 3.2 Growth of Co on HOPG, (63x6 3) R30o and graphene Co was evaporated on HOPG, 6 3 and graphene using Omicron’s e-beam evaporator Various fluxes from 10 -3 to 10-2 ML/s were used for growth ... each other (see Fig 3. 13a) For VW growth (3D islands), a plot with single gradient across all the coverage is observed (see Fig 3. 13b) since the thickness of 3D g...

Ngày tải lên: 11/09/2015, 09:58

... shows graphene lattice; (c) and (d) distributions of cluster volume on 63 and graphene terrace respectively; and (e) line profiles of unadorned area of 63 (blue) and graphene (dotted line) Fig 4. 17a ... SiC 4. 2Å SiC SiC SiC 3.3Å 4. 2Å 3.3Å SiC SiC SiC SiC SiC SiC 3.3Å Fig 4. 27 Mechanism in Fig 4. 24 and 4. 26 are extended for third layer graphene formation...

Ngày tải lên: 11/09/2015, 09:59

... 50 o h 350 eV 50 o C 1s h 350 eV 50 o o 50 153 Intensity (a.u.) Intensity (a.u.) 2 85 B2 0o C6 C5 0o B1 30 Co 156 154 152 Binding energy (eV) 10 Co Co Graphene 158 30 Co 10 Co C4 C3 C2 Co 150 Graphene ... Adsorption of Co at room temperature (a) (b) 50 o Co 3p h 350 eV 50 o Si 2p h 350 eV 60 50 o 102 A1 o Intensity (a.u.) Intensity (a.u.) 50 0o 0o 30 Co 30 Co 10 Co Co Grap...

Ngày tải lên: 11/09/2015, 09:59

... site of bright and dim cluster relative to the structure of 6 3 The bright clusters reside on top of the corner of 6x6 maxima while the dim clusters reside on top of the “hole” (3 clusters) of 6 3 ... top of the flat islands The graphene surfaces in (a)-(d) were exposed to Co flux of 1 .6 x 10-2 ML/s at growth temperatures of 450oC, 61 0oC, 720oC and 450oC respe...

Ngày tải lên: 11/09/2015, 09:59

... length of Si-C (1.89 Å) Because of this large separation between graphene and 6x6 maxima, we believe the graphene monolayer interact weakly with the underlying interface (iii) nucleation dynamics of ... nucleation of 63 surface 250 Conclusions (iv) surface intercalation of Co on graphene and 63 surface Co deposited at elevated temperature exhibits a completely differen...

Ngày tải lên: 11/09/2015, 09:59

... GROWTH AND PATTERNING OF NANOSTRUCTURES THROUGH IRREVERSIBLE LIQUID DRYING, SELF- ASSEMBLY, AND CRYSTALLIZATION WU JIHONG NATIONAL UNIVERSITY OF SINGAPORE 2010 ACKNOWLEDGEMENTS ... anthracene wires based on irreversible liquid drying and molecular self- assembly; and (4) macroscopic surface architectures of self- assembled (3-aminopropyl)triethoxysilane...

Ngày tải lên: 11/09/2015, 10:04

... form of crystal growth has revolutionized opto-electronic materials technology and is beginning to impact the new frontier of spintronics Epitaxial Ni/ insulator interfaces are of growing interest, ... are two kinds of sputtering: cathodic 11 Chapter Introduction sputtering and reactive sputtering One of the main differences in the mode of growth of sputtered deposi...

Ngày tải lên: 09/10/2015, 11:24

... LPE GROWTH AND FABRICATION OF GAP GREEN LEDS ABSTRACT Nitrogen-doped gallium phosphide is a material that has been well established for use in the fabrication of yellow -green light emitting diodes ... LIQUID PHASE EPITAXIAL GROWTH AND FABRICATION OF GALLIUM PHOSPHIDE GREEN LIGHT EMITTING DIODES CONTENTS ABSTRACT……………………………………………………………………… …...

Ngày tải lên: 10/11/2015, 11:00

... LIQUID- PHASE MICROEXTRACTION FOR THE DETERMINATION OF ACIDIC DRUGS AND β -BLOCKERS IN WATER SAMPLES EE KIM HUEY (B.Sc (Hons.), NUS) A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF SCIENCE ... thanks to Xiaofeng for her insight to the project; Junie for proofreading this thesis; Elaine and Debbie for their friendship during the course of this pro...

Ngày tải lên: 10/11/2015, 11:00