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Improvement of mechanical properties of mesoporous ultra low k thin films after NH3 plasma treatment

Improvement of mechanical properties of mesoporous ultra low k thin films after NH3 plasma treatment

Improvement of mechanical properties of mesoporous ultra low k thin films after NH3 plasma treatment
... of NH3 Plasma Treatment on Mechanical Properties of Porous Low- k Thin Films 71 4.1 Effects of NH3 Plasma Treatment on the Mechanical Properties of ZIRKON LK2200 TM Porous Low- k ... Porous Low- k Thin Film 52 2.4.3 NH3 Plasma Treatment 53 2.4.4 Characterization of the Improvement of Mechanical Properties of Porous Low- k Thin...
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Báo cáo "Preparation and characteristics of the In-doped ZnO thin films and the n-ZnO:In/p-Si heterojunctions for optoelectronic switch" potx

Báo cáo "Preparation and characteristics of the In-doped ZnO thin films and the n-ZnO:In/p-Si heterojunctions for optoelectronic switch" potx
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Elucidation of levels of bacteria viability post non equilibrium dielectric barrier discharge plasma treatment

Elucidation of levels of bacteria viability post non equilibrium dielectric barrier discharge plasma treatment
... by pure exposure to helium 125 xi Abstract Elucidation of Levels of Bacterial Viability Post- Non- Equilibrium Dielectric Barrier Discharge Plasma Treatment Moogega Cooper Alexander Fridman, Ph.D ... 94 5.4 Plasma treatment of dried plasmids to quantify level of destruction 95 iv 5.5 Plasma treatment of Chromosomal DNA to quantify level of destruction 9...
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encycopedia of materials characterization surfaces interfaces thin films c brundle et al bh 1992 pdf

encycopedia of materials characterization surfaces interfaces thin films c brundle et al bh 1992 pdf
... ENCYCLOPEDIA OF MATERIALS CHARACTERIZATION MATERIALS CHARACTERIZATION SERIES Surfaces, Interfaces, Thin Films Series Editors: C Richard Brundle and Charles A Evans, Jr Series Titles Encyclopedia ... to that end Library of Congress Cataloging-in-Publication Data Brundle, C R Encyclopediaof materials characterization: surfaces, interfaces, thin films/ C Richar...
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Báo cáo nghiên cứu khoa học: "Preparation and characteristics of the In-doped ZnO thin films and the n-ZnO:In/p-Si heterojunctions for optoelectronic switch" pot

Báo cáo nghiên cứu khoa học: "Preparation and characteristics of the In-doped ZnO thin films and the n-ZnO:In/p-Si heterojunctions for optoelectronic switch" pot
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 14 ppt

Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 14 ppt
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 2 pps

Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 2 pps
... Maximum sample size Instrument cost 0.5 nm 2. 5-5 nm +150 pm 0. 1 -2 5 pm, depending on stylus radius 15-mm thickness, 20 0-mm diameter $30,00 0-$ 70,000 Optical Profiler Depth resolution Minimum step Maximum ... polarization of viso ible light that has been reflected from the surface of a magnetic sample The orientation of the magnetization is determined from the sign of the r...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 3 pps

Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 3 pps
... an address clock typically 3. 1 EDS 1 23 900 0- Si-Ka 8Ooo- 700 0- Bi-Ma Fe-Ka ? a 3Ooo- 200 0- Bi-La IOOOI I I 10 12 Energy (kev) Figure I 14 16 18 20 Standard output of an EDS spectrum The horizontalaxis ... in -~ ) Figure 2, where high-Z, polyether sulfone ( - [ C ~ H ~ S O ~ - C G H ~ - O - ]inclusions are seen as dark objects on a lighter background from a...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 5 ppt

Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 5 ppt
... &t of a phase shift, which amounts to +0.20 .5 A, depending upon the absorbing and backscatteringatom phase functions a-') 220 ELECTRON/X-RAY DIFFRACTION Chapter 21 - 14 - 7- h W mx O- 7- -1 4- -2 1 ... ELECTRON/X-RAY DIFFRACTION Chapter Epitaxial a Cu on Ni[Wl] Ekln=917eV n I , \ - Expt - (Egelhoff) Theory: s s c - P w cu: - b bulk 50 ml Layer - 14m...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 6 ppsx

Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 6 ppsx
... Chemical shift from zero-valent state Ni Ni2+ -2 .2 eV Fe Fez+ -3 .0 eV Fe3+ -4 .1 eV Ti Ti4+ -6 .0 eV Si si4+ -4 .0 eV Al Al3+ -2 .0 eV cu cu+ -0 .0 eV cu2+ -1 .5 eV Zn Zn2+ -0 eV W w4' eV w6' eV Table Typical ... is within a few eV of its value for elemental carbon, and the Ni 2p BE is within a few eV of its value for Ni metal The identification of core-level...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 7 ppt

Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 7 ppt
... s2 (Mi) s3 (cu) Fe (% wt.) 10.25 10.25 - 10.50 - Ni (% wt.) 89 .75 89 .75 - 89.50 - - - tc,(4 1652 1698 1 674 tFeNi(& 2121 2048 - tCu@) 2 470 24 57 - Table 2115 - 2416 XRF mutts for films o Cr, FeNi, ... Fe (5)-Ni (95) 4.2 5.0 2.5 Fe (10)-Ni (90) 9.2 9.0 6.2 Fe (20)-Ni (80) 19.4 19.2 19.4 Fe (34)-Ni (66) 47. 3 48.4 44.5 Fe (50)-Ni (50) 59.1 61 .7 59.1 Fe (6...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 8 pptx

Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 8 pptx
... mathematical details of polarization in optics D E Aspnes In: Handbook of Optical Constana of Solid (E Palik, ed.) Academic Press,Orlando, 1 985 Description of use of ellipsometry to determine optical ... 31,99, 1 988 Review of use of variable-angle spectroscopicellipsometer (VASE) for semiconductors J A Woollam and I? G Snyder M a t Sci Eng B5,279,1990 Recent review of applic...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 9 pps

Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 9 pps
... materials, such as thin f l s im, 8.4 NMR 467 -3 00 Figure -4 00 -5 00 -6 00 -7 00 -8 00 -9 00 PPM Solid state 51V static and magic-angle spinning NMR spectra of a-Mg2V20, This compound has two crystallographically ... films (WSi,, MoSi,TiSi,, etc.) Barrier metals (TIN,, TiW,, etc.) Insulating layers (SiO,, SiN,, and S i Cu in A interconnect I 111-Vand11-VImaterials(A...
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Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 10 pdf

Encycopedia of Materials Characterization (surfaces_ interfaces_ thin films) - C. Brundle_ et al._ (BH_ 1992) WW Part 10 pdf
... counterpan 10. 1 Dynamic SIMS 535 - 2- Zr 1- 0- -1 s Mg Fe la - - -1 - -2 ( - TI AI v*:*Nb ' Cr Mo - - -2 So -3 - - -3 I - I I 6.0 I 7.0 I I 8.0 I I I I I I I I I 9.0 10. 0 12.0 11.0 - I.P - - ? - f Y ... principles of ISS 11 D.P Smith SufaceSci 25, 171, 1971 9.4 ISS 525 IO M A S S AND OPTICAL SPECTROSCOPIES 10. 1 Dyn...
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