Design and fabrication of III v semiconductor nanostructures by molecular beam epitaxy

Design and fabrication of III v semiconductor nanostructures by molecular beam epitaxy

Design and fabrication of III v semiconductor nanostructures by molecular beam epitaxy

... 1.6 Motivation and objective of the thesis The goal of this thesis is to design and fabricate 3D nanostructures, QDs and QRs on III- V compound semiconductors The fabrication of the 3D nanostructures ... windows of lowest attenuation, viz 0.85 µm, 1.3 µm and 1.55 µm III- V semiconductor lasers using InGaAsP as an active Figure 1.3: Plot of bandgap against latt...

Ngày tải lên: 30/09/2015, 06:04

149 319 0
Báo cáo hóa học: " Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy" pot

Báo cáo hóa học: " Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy" pot

... applications of QDs Quantum dots fabrication Fig Schematic diagram of the density of states (DOS) in the conduction band (CB) and valence band (VB) for a (a) double heterostructure, (b) quantum well, ... to grow InAs islands on GaAs and it has been shown that the size fluctuation of dots is relatively small (£10%) and the small dots and surrounding host matrix are disloca...

Ngày tải lên: 22/06/2014, 22:20

14 293 0
Báo cáo hóa học: " Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy" doc

Báo cáo hóa học: " Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy" doc

... growth of the {111} Page of sidewalls, giving rise to a typical rhombohedral crosssection (Figure 6c) In summary, by combining SEM and TEM analysis of group IV semiconductor NWs grown by MBE ... analysis of the surface energy of diamond cubic crystals Surf Interface Anal 2003, 35:805 doi:10.1186/1556-276X-6-113 Cite this article as: Xu et al.: Synthesis of long grou...

Ngày tải lên: 21/06/2014, 05:20

7 334 0
Báo cáo hóa học: " Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy" ppt

Báo cáo hóa học: " Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy" ppt

... growth of the {111} Page of sidewalls, giving rise to a typical rhombohedral crosssection (Figure 6c) In summary, by combining SEM and TEM analysis of group IV semiconductor NWs grown by MBE ... analysis of the surface energy of diamond cubic crystals Surf Interface Anal 2003, 35:805 doi:10.1186/1556-276X-6-113 Cite this article as: Xu et al.: Synthesis of long grou...

Ngày tải lên: 21/06/2014, 07:20

7 399 0
Báo cáo sinh học: "Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth " pot

Báo cáo sinh học: "Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth " pot

... Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions Ya Wang1, Zhiming Liao1, Hongyi Xu1, ... JZ: j.zou@uq.edu.au Abstract GeMn/Ge epitaxial superlattices grown by molecular beam epitaxy with different growth conditions have been systematically investigated by transmission electron microscopy...

Ngày tải lên: 18/06/2014, 22:20

11 318 0
Báo cáo hóa học: " Surface Localization of Buried III–V Semiconductor Nanostructures" pot

Báo cáo hóa học: " Surface Localization of Buried III–V Semiconductor Nanostructures" pot

... a direct localization of buried nanostructures even at cap layer thickness as large as 100 nm Different experiments, based on the nucleation of new nanostructures at the top surface of 25- and ... situation when 1.6 ML of InAs is deposited on the surface With this amount of InAs, besides the QD formed at the top of the mounds, we observe QD decorating the sidewalls of th...

Ngày tải lên: 22/06/2014, 00:20

5 179 0
Báo cáo " Research, design and fabrication of a high-power combiner using Wilkinson bridge of L-band " pptx

Báo cáo " Research, design and fabrication of a high-power combiner using Wilkinson bridge of L-band " pptx

... Thanh, Nguyen Anh Tuan, Bach Gia Duong, Research, Design And Fabrication Of The 45W And The 200W, L-Band Power Amplifier Using The Modern Microstrip Technology For Application In The National ... have also investigated the S11 factor of the power divider Wilkinson on network analyzer, the result was relatively similar to that of the simulink model Afterthat we have measu...

Ngày tải lên: 22/03/2014, 11:20

5 375 0
RESEARCH, DESIGN AND FABRICATION OF DIGITAL INFORMATION TRANSIMITER WORKING IN THE VHF BAND

RESEARCH, DESIGN AND FABRICATION OF DIGITAL INFORMATION TRANSIMITER WORKING IN THE VHF BAND

... Vietnam, information transceiver system working VHF bands have a lot of important applications Therefore, the study of information transceiver systems in the band VHF to understand the structure, the ... buildings can be a problem in urban areas 1.3 Thesis objectives and structure In this thesis,I will clarify the roles and the need of a information...

Ngày tải lên: 27/05/2014, 20:57

47 444 0
Báo cáo hóa học: " Design and Fabrication of Fiber-Optic Nanoprobes for Optical Sensing" pdf

Báo cáo hóa học: " Design and Fabrication of Fiber-Optic Nanoprobes for Optical Sensing" pdf

... 19 Holland L: Vacuum Deposition of Thin Films Wiley, New York; 1956 doi:10.1007/s11671-010-9744-5 Cite this article as: Zhang et al.: Design and Fabrication of Fiber-Optic Nanoprobes for Optical ... nanoprobe fabrication A thin film of an optically opaque metal such as aluminum, silver, or gold is coated along the outside walls of the tapered optical fiber tip to for...

Ngày tải lên: 21/06/2014, 08:20

6 441 0
Báo cáo hóa học: " Profile Prediction and Fabrication of Wet-Etched Gold Nanostructures for Localized Surface Plasmon Resonance" docx

Báo cáo hóa học: " Profile Prediction and Fabrication of Wet-Etched Gold Nanostructures for Localized Surface Plasmon Resonance" docx

... abundance of various-shaped gold nanostructures Figure exemplifies that the profile of the nanostructure after gold evaporation is different for conformal and non-conformal gold nanostructures, as well ... angles of h = 60°, 60°, 60° and u = 0°, 120°, 240° to the nanosphere kinds of gold depositions are simulated for wet etching: a–d are for 3D conformal gold de...

Ngày tải lên: 22/06/2014, 00:20

9 372 0
Design and fabrication of microneedles for drug delivery

Design and fabrication of microneedles for drug delivery

... DESIGN AND FABRICATION OF MICRONEEDLES FOR DRUG DELIVERY JI JING ( B.Eng.,M.Eng., NWPU, CHINA) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF MECHANICAL ... Many of fabricated microneedles are designed for transdermal therapies to deliver drugs such as insulin and heparin On the other hand, microneedles can also be used for local d...

Ngày tải lên: 14/09/2015, 11:17

184 546 0
Design and fabrication of superjunction power MOSFET devices

Design and fabrication of superjunction power MOSFET devices

... DESIGN AND FABRICATION OF SUPERJUNCTION POWER MOSFET DEVICES CHEN YU (M.Eng., Xi’an Jiaotong University, P.R.China) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY DEPARTMENT OF ... structures of Polysilicon Flanked superjunction, Oxide-bypassed (OB) superjunction and Graded oxide by-passed (GOB) superjunction were designed to overcome the fabrication...

Ngày tải lên: 14/09/2015, 14:12

217 343 0
Design and fabrication of bead based microfluidic device

Design and fabrication of bead based microfluidic device

... percentages and results of the assay 3-4 Chapter Design of Bead- based Microfluidic Device CHAPTER 4 DESIGN OF BEAD- BASED MICROFLUIDIC DEVICE 4.1 Introduction A microfluidic device offers numerous ... Applications of microfluidic devices and focus of research in this thesis 2) Advantages of microfluidic devices and aim to improve multiplexing capab...

Ngày tải lên: 30/09/2015, 06:04

119 265 0
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