... is: f ¼ QD dInN dGaN QD dInN d¼ Fig PVTEM micrograph of an InN quantum dot showing three ´ sets of translational moire fringes QD dGaN À dInN dGaN À dInN ð2Þ where er is the residual strain, f ... O Briot, S Ruffenach, J Crystal Growth 269, 15 (2004) ´ ´ ´ J.G Lozano, D Gonzalez, A.M Sanchez, D Araujo, S Ruf´ fenach, O Briot, R Garcıa, Phys Stat Sol 3, 1687 (2006) 10 J.G Lozano, A.M Sanchez, ... misfit dislocation into a threading segment close to the boundary of a QD Conclusions In summary, we have estimated the degree of plastic relaxation in individual InN quantum dots on GaN using J...