Fabrication of ultra shallow junctions and advanced gate stacks for ULSI technologies using laser thermal processing

... FABRICATION OF ULTRA- SHALLOW JUNCTIONS AND ADVANCED GATE STACKS FOR ULSI TECHNOLOGIES USING LASER THERMAL PROCESSING CHONG YUNG FU (B A Sc (First Class Hons.), NTU) A THESIS SUBMITTED FOR ... fabricate ultra- shallow p+/n junctions and advanced poly-Si gate stacks for ultra- large scale integration technologies LTP of ultra- shallow ju...

Ngày tải lên: 12/09/2015, 11:29

... DEFECT ENGINEERING IN THE FORMATION OF ULTRA- SHALLOW JUNCTIONS FOR ADVANCED NANO- METAL- OXIDESEMICONDUCTOR TECHNOLOGY YEONG SAI HOOI (B Eng (Hons.), NUS) A THESIS SUBMITTED FOR THE DEGREE OF ... USJs for the application in nano- CMOS devices through the understanding and maneuvering of dopant -defect interactions, known as defect engineering T...

Ngày tải lên: 11/09/2015, 09:58

... process windows Laser annealing offers several advantages over conventional processing techniques: 1) the junction depth is defined by the amorphous/crystalline interface Laser annealing, combined ... and ultra- shallow junctions The degree of melting is determined by the extent of laser absorption and rate of heat dissipation, which are dependent on the substrate prop...

Ngày tải lên: 06/10/2015, 21:15

... ADVANCED GATE STACKS FOR NANO- SCALE CMOS TECHNOLOGY WANG XIN PENG (M Eng., Tsinghua University; B Eng., Tsinghua University) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... Developments in Advanced Gate Stacks Involving High-k Dielectrics and Metal Gates Chapter Developments in Advanced Gate Stacks Involving High-k Dielectrics and Metal Gates 2.1 High-k Gate Di...

Ngày tải lên: 15/09/2015, 21:16

... sulfosuccinate (AOT) as co-templates and tetraethoxysilane (TEOS) as silica source and then annealed in air For obtaining the ultrafine magnetic hollow silica NPs, we added hollow magnetite NPs (ca 100 ... synthesis of a particle size of less than 30 nm for hollow silica materials Herein, we present an advance in a simple and scalable wet chemical and subsequent...

Ngày tải lên: 22/06/2014, 00:20

... coefficients of (a) Ag nanorods synthesized using 1:5 ratio of Ag2C2O4 and CTAB, and (b) and (c) nanospheres synthesized using 1:5 ratio of Ag2C2O4 and PVP and 1:2 ratio of Ag2C2O4 and CTAB, respectively, ... crystallite sizes of (a) Ag nanorods synthesized using 1:5 ratio of Ag2C2O4 and CTAB and (b) and (c) nanospheres synthesized using 1:2 ratio of Ag2...

Ngày tải lên: 22/06/2014, 01:20

... step of gate stack etching to silicidation of gate stacks with Hf based high-K gate dielectrics are summarized Fig 1.8 Integration issues from gate stack etching to silicidation of gate stacks ... Metal gate Gate dielectric Selectivity of PR to metal gate Selectivity of metal gate to dielectric and optical emission trace endpoint Si Fig 1.11 Illustratio...

Ngày tải lên: 16/09/2015, 08:30

... considered, the conductance of the conduction and valence bands is always symmetrical as determined by the formulation of the energy dispersion relation, equation In the case of graphene nanoribbons, the ... close to the K point but significant discrepancies occur at higher energies Conductance of Graphene Nanoribbons and Junctions Conductance in graphen...

Ngày tải lên: 21/06/2014, 11:20

... of Copper Nanoparticles Synthesis of ultrafine copper nanoparticles in organic solvent was typically processed as follows A certain amount of poly(N-vinylpyrrolidone) (PVP, MW = 55,000), acting ... expected, in favor of the formation of more ultrafine nanoparticles Along this line, the use of stronger reducing agent NaBH4 played an important role as well in the...

Ngày tải lên: 22/06/2014, 00:20

... diameter of ca nm) The further evidence of the existence of Ag nanoparticles is provided by EDS (Fig 3e), which reveals the presence of S and Ag on the surface of SWCNT @SiO2/Ag Similarly, by using ... analysis was performed using an OXFORD ISIS system attached to the SEM 123 1386 Results and Discussion Plasma Treatment of SWCNT and Fabrication of SWCNT@SiO2...

Ngày tải lên: 22/06/2014, 00:20

... mean and range normalization Baxter (1995) applied and studied standardization and transformation in 23 principal component analysis Normalization techniques for microarray data are studied and ... A STUDY OF NEW AND ADVANCED CONTROL CHARTS FOR TWO CATEGORIES OF TIME RELATED PROCESSES DENG PEIPEI B.Sc., University of Science and Technology of Chi...

Ngày tải lên: 10/09/2015, 09:11

... a thesis entitled Design and Analysis of Ultra- wide Band and Millimeter- wave Antennas ” by Zhang Yaqiong in partial fulfillment of the requirements for the degree of Doctor of Philosophy Dated: ... In the second part of this thesis, various 60 GHz wideband antennas and arrays are designed A new wideband planar circularly polarized (CP) helical antenna array is...

Ngày tải lên: 10/09/2015, 15:49

... analysis and design of ultra- wideband (UWB) radio transceivers and arrays UWB radio transceivers can be contrasted from their narrowband radio counterparts by the signals that they transmit and ... time -of- arrival standard deviation at ± 10° for six cases of SNR 53 3.3 Theoretical and experimental time -of- arrival standard deviation at ± 20° for six cases of SNR 54 3....

Ngày tải lên: 13/09/2015, 20:08

... MICRO- RAMAN STUDY OF MECHANICALLY ACTIVATED FERROELECTRICS AND ADVANCED MAGNETIC MATERIALS YU TING (B Sc Jilin University) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... presents results of our micro- Raman studies of mechanically activated ferroelectrics, PbTiO3 & SrBi2Ta2O9, and advanced magnetic materials, CoFe2O4 & CrO2 The mecha...

Ngày tải lên: 17/09/2015, 17:19

... morphology One of the main concerns with in- house fabrication of polyacrylamide gel microarrays is the quality of the spot produced Spot morphology involves the shape and homogeneity of the microarray ... to assume that DNA binding will be faster with an increase in the number of binding sites within the medium However, this is true only in the initial stages of bind...

Ngày tải lên: 06/10/2015, 20:42