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Fabrication of ultra shallow junctions and advanced gate stacks for ULSI technologies using laser thermal processing

Fabrication of ultra shallow junctions and advanced gate stacks for ULSI technologies using laser thermal processing

Fabrication of ultra shallow junctions and advanced gate stacks for ULSI technologies using laser thermal processing

... FABRICATION OF ULTRA- SHALLOW JUNCTIONS AND ADVANCED GATE STACKS FOR ULSI TECHNOLOGIES USING LASER THERMAL PROCESSING CHONG YUNG FU (B A Sc (First Class Hons.), NTU) A THESIS SUBMITTED FOR ... fabricate ultra- shallow p+/n junctions and advanced poly-Si gate stacks for ultra- large scale integration technologies LTP of ultra- shallow junctions typically involves the pre-amorphization of the silicon ... Interaction of Laser with Crystalline Silicon 43 4.3 Interaction of Laser with an a-Si Overlayer on c-Si 47 4.4 Summary 50 CHAPTER FORMATION OF ULTRA- SHALLOW JUNCTIONS USING LASER THERMAL PROCESSING...
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Defect engineering in the formation of ultra shallow junctions for advanced nano metal oxide semiconductor technology

Defect engineering in the formation of ultra shallow junctions for advanced nano metal oxide semiconductor technology

... DEFECT ENGINEERING IN THE FORMATION OF ULTRA- SHALLOW JUNCTIONS FOR ADVANCED NANO- METAL- OXIDESEMICONDUCTOR TECHNOLOGY YEONG SAI HOOI (B Eng (Hons.), NUS) A THESIS SUBMITTED FOR THE DEGREE OF ... USJs for the application in nano- CMOS devices through the understanding and maneuvering of dopant -defect interactions, known as defect engineering The first USJ technique being studied is the ... understanding of the interactions between dopants and defects associated with the advanced USJ techniques, providing some insights for the optimization of USJs in the CMOS devices Summary  Summary Formation...
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Formation of ultra shallow junctions in silicon  germanium by pulsed laser annealing

Formation of ultra shallow junctions in silicon germanium by pulsed laser annealing

... process windows Laser annealing offers several advantages over conventional processing techniques: 1) the junction depth is defined by the amorphous/crystalline interface Laser annealing, combined ... and ultra- shallow junctions The degree of melting is determined by the extent of laser absorption and rate of heat dissipation, which are dependent on the substrate properties Laser annealing ... that laser annealing has a strong dependence on the thermal conductivity of the substrate used which causes a great challenge in maintaining the integrity of the strained-Si layer during shallow- melt...
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Advanced gate stacks for nano scale CMOS technology

Advanced gate stacks for nano scale CMOS technology

... ADVANCED GATE STACKS FOR NANO- SCALE CMOS TECHNOLOGY WANG XIN PENG (M Eng., Tsinghua University; B Eng., Tsinghua University) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR ... Developments in Advanced Gate Stacks Involving High-k Dielectrics and Metal Gates Chapter Developments in Advanced Gate Stacks Involving High-k Dielectrics and Metal Gates 2.1 High-k Gate Dielectrics ... Figures Fig 4.19 Gate leakage current comparison of (HfxLa1-x)Ny/SiO2 gate p.121 stacks with poly-Si/SiON gate stack A lower Jg was obtained for (HfxLa1-x)Ny/SiO2 gate stacks due to the formation of...
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Báo cáo hóa học:

Báo cáo hóa học: " Facile Fabrication of Ultrafine Hollow Silica and Magnetic Hollow Silica Nanoparticles by a Dual-Templating Approach" pdf

... sulfosuccinate (AOT) as co-templates and tetraethoxysilane (TEOS) as silica source and then annealed in air For obtaining the ultrafine magnetic hollow silica NPs, we added hollow magnetite NPs (ca 100 ... synthesis of a particle size of less than 30 nm for hollow silica materials Herein, we present an advance in a simple and scalable wet chemical and subsequent annealing treatment synthesis of ultrafine ... illustrate that some particles may be appeared as open cups due to the loss of organic and surfactant materials during annealing The mesopores provide pathways by which organic and surfactant can...
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Báo cáo hóa học:

Báo cáo hóa học: " Fabrication of Worm-Like Nanorods and Ultrafine Nanospheres of Silver Via Solid-State Photochemical Decomposition" pot

... coefficients of (a) Ag nanorods synthesized using 1:5 ratio of Ag2C2O4 and CTAB, and (b) and (c) nanospheres synthesized using 1:5 ratio of Ag2C2O4 and PVP and 1:2 ratio of Ag2C2O4 and CTAB, respectively, ... crystallite sizes of (a) Ag nanorods synthesized using 1:5 ratio of Ag2C2O4 and CTAB and (b) and (c) nanospheres synthesized using 1:2 ratio of Ag2C2O4 and CTAB and 1:5 ratio of Ag2C2O4 and PVP, respectively, ... patterns of (a) Ag nanorods synthesized using 1:5 ratio of Ag2C2O4 and CTAB and (b) and (c) nanospheres synthesized using 1:5 ratio of Ag2C2O4 and PVP and 1:2 ratio of Ag2C2O4 and CTAB, respectively...
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Formation of advanced gate stacks and their application to nano structure devices

Formation of advanced gate stacks and their application to nano structure devices

... step of gate stack etching to silicidation of gate stacks with Hf based high-K gate dielectrics are summarized Fig 1.8 Integration issues from gate stack etching to silicidation of gate stacks ... Metal gate Gate dielectric Selectivity of PR to metal gate Selectivity of metal gate to dielectric and optical emission trace endpoint Si Fig 1.11 Illustration of summary of integration issues of ... that a gate stack structure consisting of high-K dielectric and metallic conductor will be required In this thesis, physical and chemical mechanisms on the formation of advanced gate stacks for...
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Báo cáo hóa học:

Báo cáo hóa học: " Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model" pptx

... considered, the conductance of the conduction and valence bands is always symmetrical as determined by the formulation of the energy dispersion relation, equation In the case of graphene nanoribbons, the ... close to the K point but significant discrepancies occur at higher energies Conductance of Graphene Nanoribbons and Junctions Conductance in graphene nanoribbons and metal/semiconductor junctions ... nearest-neighbour, the solution to the coupling strength must be derived numerically Conclusions In this paper, we have determined the energy band structure of graphene nanoribbons and conductance of nanoribbons...
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Báo cáo hóa học:

Báo cáo hóa học: " Facile Fabrication of Ultrafine Copper Nanoparticles in Organic Solvent" potx

... of Copper Nanoparticles Synthesis of ultrafine copper nanoparticles in organic solvent was typically processed as follows A certain amount of poly(N-vinylpyrrolidone) (PVP, MW = 55,000), acting ... expected, in favor of the formation of more ultrafine nanoparticles Along this line, the use of stronger reducing agent NaBH4 played an important role as well in the controlled synthesis of ultrafine copper ... accelerating voltage of 100 kV TEM samples were prepared by placing a drop of a dilute dispersion of Cu nanoparticles on the surface of a 400-mesh copper grid backed with Formvar and were dried in...
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Báo cáo hóa học:

Báo cáo hóa học: " Fabrication of Carbon Nanotube/SiO2 and Carbon Nanotube/ SiO2/Ag Nanoparticles Hybrids by Using Plasma Treatment" pptx

... diameter of ca nm) The further evidence of the existence of Ag nanoparticles is provided by EDS (Fig 3e), which reveals the presence of S and Ag on the surface of SWCNT @SiO2/Ag Similarly, by using ... analysis was performed using an OXFORD ISIS system attached to the SEM 123 1386 Results and Discussion Plasma Treatment of SWCNT and Fabrication of SWCNT@SiO2 Therby The side walls of SWCNTs can be ... on the side walls of SWCNTs Preparation of SWCNT@SiO2 Composite Scheme Schematic illustration of fabrication of SiO2-coated single wall carbon nanotubes (SWCNT@SiO2) and Ag nanoparticles immobilized...
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A study of new and advanced control charts for two categories of time related processes

A study of new and advanced control charts for two categories of time related processes

... mean and range normalization Baxter (1995) applied and studied standardization and transformation in 23 principal component analysis Normalization techniques for microarray data are studied and ... A STUDY OF NEW AND ADVANCED CONTROL CHARTS FOR TWO CATEGORIES OF TIME RELATED PROCESSES DENG PEIPEI B.Sc., University of Science and Technology of China A THESIS SUBMITTED FOR THE DEGREE OF ... Phase II control charts Common univariate Shewhart control charts, i.e X chart, and R chart or S chart, are for variable measurements monitoring Many Shewhart control charts for attributes are...
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Design and analysis of ultra wide band and millimeter wave antennas

Design and analysis of ultra wide band and millimeter wave antennas

... a thesis entitled Design and Analysis of Ultra- wide Band and Millimeter- wave Antennas ” by Zhang Yaqiong in partial fulfillment of the requirements for the degree of Doctor of Philosophy Dated: ... In the second part of this thesis, various 60 GHz wideband antennas and arrays are designed A new wideband planar circularly polarized (CP) helical antenna array is designed and realized Moreover, ... PERFORMANCE OF TRANSITIONS 172 5.8 BOND WIRE EFFECT ON |S11| / |S22| PERFORMANCE OF TRANSITIONS 172 Abstract Ultra- wideband (UWB) antennas and 60-GHz millimeter- wave...
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Analysis and design of ultra wideband transceiver and array

Analysis and design of ultra wideband transceiver and array

... analysis and design of ultra- wideband (UWB) radio transceivers and arrays UWB radio transceivers can be contrasted from their narrowband radio counterparts by the signals that they transmit and ... time -of- arrival standard deviation at ± 10° for six cases of SNR 53 3.3 Theoretical and experimental time -of- arrival standard deviation at ± 20° for six cases of SNR 54 3.4 Measured mean and standard ... of mm layer of tap water 132 LIST OF TABLES xv LIST OF TABLES Table: 3.1 Theoretical and experimental time -of- arrival standard deviation at boresight for six cases of SNR 53 3.2 Theoretical and...
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Micro raman study of mechanically activated ferroelectrics and advanced magnetic materials

Micro raman study of mechanically activated ferroelectrics and advanced magnetic materials

... MICRO- RAMAN STUDY OF MECHANICALLY ACTIVATED FERROELECTRICS AND ADVANCED MAGNETIC MATERIALS YU TING (B Sc Jilin University) A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF PHILOSOPHY ... presents results of our micro- Raman studies of mechanically activated ferroelectrics, PbTiO3 & SrBi2Ta2O9, and advanced magnetic materials, CoFe2O4 & CrO2 The mechanical activation process of amorphous ... DEPARTMENT OF PHYSICS NATIONAL UNIVERSITY OF SINGAPORE 2003 MICRO- RAMAN STUDY OF FERROELECTRICS AND MAGNETIC MATERIALS YU TING 2003 ACKNOWLEDGMENTS This project is made possible with the great help of...
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Fabrication of polyacrylamide micro pillars and its application in microarray analysis

Fabrication of polyacrylamide micro pillars and its application in microarray analysis

... morphology One of the main concerns with in- house fabrication of polyacrylamide gel microarrays is the quality of the spot produced Spot morphology involves the shape and homogeneity of the microarray ... to assume that DNA binding will be faster with an increase in the number of binding sites within the medium However, this is true only in the initial stages of binding taking place at the surface ... good and practical guideline in microarray fabrication and may greatly improve the performance of microarray analysis in general Array geometry represents the spatial localization of spots in the...
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