Engineering the band gap, fermi level, electronic and magnetic properties of transparent conducting oxides

... ENGINEERING THE BANDGAP, FERMI LEVEL, ELECTRONIC AND MAGNETIC PROPERTIES OF TRANSPARENT CONDUCTING OXIDES YONGLIANG ZHAO (B.Sc, NATIONAL UNIVERSITY OF SINGAPORE, SINGAPORE) A THESIS SUBMITTED ... splitting and carbon dioxide reduction, both of which strongly depend on the positions of the valence and conduction band edges Hence to modify the bandgap...

Ngày tải lên: 10/09/2015, 09:12

... analysis, and drafted the manuscript LS and PB conceived of the study HA, ES, LA, and LS participated in the analysis and in the production of a final version of the manuscript All authors read and ... article as: Borges et al.: Electronic and magnetic properties of SnO2/CrO2 thin superlattices Nanoscale Research Letters 2011 6:146 Submit your manuscript to a jou...

Ngày tải lên: 21/06/2014, 05:20

... and magnetic properties of alkali and alkaline earth metals doped AlN In chapter 3, the electronic and magnetic properties have been discussed for Mg and other alkali (earth) metals doped AlN In ... the prospect of magnetism in other alkali and alkaline earth metals doped AlN from bulk to various surfaces To find out the nature of mag...

Ngày tải lên: 09/09/2015, 08:12

... layers and hence open an energy gap29,36 The origins of those outstanding properties of both single layer graphene and bilayer graphene can be explored from graphene s unique crystal and electronic ... leveraged by the outstanding properties of graphene and its chemical derivatives To realize its electronic applications, it is important to understand its band stru...

Ngày tải lên: 10/09/2015, 08:27

... Investigation of 2DEG at the interfaces of various combinations of polar and non -polar oxides 103 5.1 Introduction 105 5.2 Fabrication of polar and non -polar oxide interfaces ... along different crystallographic orientations and in various combinations of polar/ non -polar oxide interfaces, providing us further understanding of the nature of carr...

Ngày tải lên: 10/09/2015, 09:11

... asymptotically the value of the band-gap of the undoped Si-nw This is another indication of how doping can modify the electronic and optical properties of the Si nanostructures Conclusions 3.2 3.4 ... systematic analysis of the effect of the B and P codoping in Si-nw, concentrating not only on the structural properties but also on how doping i...

Ngày tải lên: 16/03/2014, 15:15

... Fitzgerald -1 9 99 14 Extracting Typical τ for Metals • τ ~1 0 -1 4 sec for metals in Drude model 3.225 © E.A Fitzgerald -1 9 99 15 Thermal Velocity • So far we have discussed drift velocity vD and scattering ... independent of magnitude of L and W Useful for working with films of thickness, t R R R 3.225 © H.L Tuller-20 01 17 How to Make Resistance Measurements Rc2 I Rc1 Rs V...

Ngày tải lên: 11/08/2014, 14:20

... For Si, Eg=1.1eV, and let µe and µh be approximately equal at 1000cm2/V-sec (very good Si!) σ~1010cm-3*1.602x1 0-1 9*1000cm2/V-sec=1.6x1 0-6 S/m, or a resistivity ρ of about 106 ohm-m max • • One important ... atoms per cm-3 – n~10 15, p~1020/10 15~ 1 05 σ/σi~(p+n)/2ni~n/2ni~1 05! Impurities at the ppm level drastically change the conductivity ( 5- 6 orders of magnitude) 3.2 25...

Ngày tải lên: 11/08/2014, 14:20

... conductivity: σ = 4.4 10 -1 8 S cm-1 T [°C] 900 -4 800 700 600 500 10 Y-cut -5 -1 σ [S cm ] 10 -1 σ0 = 2.1 S cm EA = 105 kJ mol -6 10 -1 -7 10 3.225 10 11 10 /T [1/K] 12 13 © H.L Tuller-2001 26 13  ... Substrate: Si wafer 20 40 60 80 110 100 90 80 70 60 50 40 30 20 10 -1 0 110 100 90 80 70 60 50 40 30 20 10 -1 0 20 MFC2 Feuchte Temp CO 40 NO2...

Ngày tải lên: 11/08/2014, 14:20

... Tuller-2001 Influence of Dopants on Electrical Conductivity of SrTiO3 log(σ / (Ωcm )-1 ) λ 0 .99 5 1,005 T = 800 °C no -1 ac -2 ce pto -3 rd op rd op ed ed -4 Sr2+ Ti4+ O 2-3 -5 acceptor donor -2 0 -1 6 ... Versatility High Strain (Pb0 .98 La0.02(Zr0.7Hf0.3)1-xTixO3 AFE­ FE System (C Heremans and H.L Tuller, J Euro Ceram Soc., 19, 11 39 ( 199 9).) Atmosphere de...

Ngày tải lên: 11/08/2014, 14:20

... are discrete 3. 225 © E Fitzgerald-1999 24 12 Representation of E,k for 1-D Material E= states electrons h 2k p = 2m 2m E EF All e- in box accounted for m=+1/2 ,-1 /2 En+1 En En-1 Quasi-continuous ... k y ) E(kx,ky) 2m ky kx 3. 225 © E Fitzgerald-1999 Representation of E,k for 3- D Material kz Ε(kx,ky,kz) ky kF E= m π2 2mE h3 Fermi Surface or Fermi Sphere k F = (3 n )3 vF = 2m kx 2π...

Ngày tải lên: 11/08/2014, 14:20

... when you join these together? 3.225 © E Fitzgerald-1999 11 Drift and Diffusion - - - - - + + + + + + + + Holes diffuse Electrons diffuse - - - - - - + + + + E + + + + An electric field forms due ... force of diffusion until EF is flat - - + + + + Holes diffuse Electrons diffuse 3.225 © E Fitzgerald-1999 13 Space Charge, Electric Field and Potentia...

Ngày tải lên: 11/08/2014, 14:20

... of positive and negative ions 3.225 © E Fitzgerald-1999 © H.L Tuller, 2001 Ferroelectrics Applications • Capacitors • Non-volatile memories • Photorefractive materials 3.225 Characteristics of ... τ=9.5x1 0-1 1 sec, ω~1010 microwave oven, transmission of E-M waves 3.225 © E Fitzgerald-1999 19 Dielectric Constant vs Frequency • Completely general ε due to the localized charge in m...

Ngày tải lên: 11/08/2014, 14:20

... =0,1,2,…,n-1 ml =- l, - l+1,…,0,…, l , -1 (ms=+ or - 1/2) U(r) -1 3.6eV 3.225 © E Fitzgerald-1999 16 Relationship between Quantum Numbers s s p s p d Origin of the periodic table © E Fitzgerald-1999 ... © E Fitzgerald-1999 © H.L Tuller-2001 Energy Gap and Mobility Trends Material Eg(eV)°K µn(cm2/V·s) GaN 3.39 150 AlAs 2.3 180 GaP 2 .4 2,100 GaAs 1.53 16,000 InP 1 .41 44...

Ngày tải lên: 11/08/2014, 14:20

... magnetic material Material Type χ Paramagnetic +1 0-5 -1 0-4 Diamagnetic -1 0-8 -1 0-5 Ferromagnetic +105 3.225 © E Fitzgerald-1999 Microscopic Source of Magnetization • No monopoles • magnetic dipole ... E~-S1S2 > Energy if Fe, Ni, Co -> J positive! Other elements J is negative Rule of Thumb: interatomic distance r ≡ > 2ra 2(atomic radius) J is a function of distance! 3...

Ngày tải lên: 11/08/2014, 14:20