Quasi brittle self healing materials numerical modelling and applications in civil engineering

... QUASI- BRITTLE SELF- HEALING MATERIALS: NUMERICAL MODELLING AND APPLICATIONS IN CIVIL ENGINEERING TRAN DIEP PHUOC THAO (B.Eng Civil (Hons)) A THESIS SUBMITTED FOR ... SC Self Consistent SEM Scanning Electron Microscope SHB Self- Healing Beam SHC Self- Healing Column SHM Self- Healing Materials SHU Self- Healing Unit SP-RVE Single-Particle RVE xvii THIS P...

Ngày tải lên: 09/09/2015, 18:54

... sensing based on metal oxide nanowires, such as zinc oxide (ZnO), tin oxide (SnO2), indium oxide (In2O3) aluminum oxide (Al2O3), gallium oxide (Ga2O3), tungsten oxide (WO3), and vanadium oxide (V2O5) ... behavior is the most important and well-known property of metal oxide materials In addition to the sensitivity to light and pressure as mentioned in previous sec...

Ngày tải lên: 20/03/2014, 13:06

... reduction COST ACTION E36 Modelling and simulation in pulp and paper industry Proceedings of Model Validation Workshop Espoo, Finland, October, 2005 Edited by Johannes Kappen, PTS, Germany Jussi Manninen, ... FI02044 VTT, Finland phone internat + 358 20 722 111, fax + 358 20 722 5000 Preface COST E36 is a European Action on modelling and simulation...

Ngày tải lên: 09/03/2014, 01:20

... “Human Language Technologies – The Baltic Perspective”, Riga, Latvia, 115-120 Kristiina Jokinen, Kari Kanto, Antti Kerminen and Jyrki Rissanen 2004 Evaluation of Adaptivity and User Expertise in ... in a Speech-based E-mail System Procs of the COLING Satellite Workshop Robust and Adaptive Information Processing for Mobile Speech Interfaces, Geneva, Switzerland Kristiina Jo...

Ngày tải lên: 23/03/2014, 19:20

... 0 .13 3 0.24 0.39 0.422 0.54 0.7 10 0 99.9 99.5 98.4 96 .1 96.3 96.2 94.2 10 0 99.6 98.9 97.8 95 .1 92 .1 84 .1 83.5 N 1. 662 1. 6 61 1.648 1. 646 1. 635 1. 610 1. 585 1. 896 1. 862 1. 867 1. 872 1. 877 1. 880 1. 885 ... 16 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Fig 10 (11 0) projections of indentation damages in...

Ngày tải lên: 19/06/2014, 11:20

... (Si) 2/ 3 (C) 2/ 3 y 3/4 0 2/ 3 2/ 3 1/3 1/3 2/ 3 2/ 3 0 2/ 3 2/ 3 0 2/ 3 2/ 3 1/3 1/3 z Wyckoff 4a 3/4 4d 2a 1/4 2a 1/3 2b 7/ 12 2b 2/ 3 2b 11/ 12 2b 2b 3/8 2b 2a 3/16 2a 1/4 2b 7/16 2b 2a 1/8 2a 1/6 2b 7 /24 ... optimized 2. 10 -0.54 cage-bowl-ring a MP2/TZV2d1f HF/6-31G∗ 2. 61 0.69 bowl-cage-ring a MR-MP2/TZV2d MP2/TZV2d1f 2. 42 -0. 02 cage-bowl-ring a MR-MP2/TZV2d1f MP2/...

Ngày tải lên: 19/06/2014, 11:20

... 2010) Photoluminescence spectrum from the front surface of the nanocrystalline film 70 Silicon Carbide – Materials, Processing and Applications in Electronic Devices containing cubic 3C and rhombohedral ... 0.297 0.099 0. 030 0 .33 0 0.264 0.165 0.099 0. 033 0.010 0. 230 0.184 0.115 0.069 0.0 23 0.007 120.4 60.0 30 .3 16.1 10.5 46.0 28 .3 16.9 10.2 7.2 93. 0 47.0 24.0 1...

Ngày tải lên: 19/06/2014, 11:20

... SiC0 .4 SiC0.7 SiC0.95 SiC1 .4 4719 6622 3 848 43 84 4929 6966 41 98 5 347 46 38 7 647 45 71 5757 45 95 8296 5152 544 2 5035 8227 53 94 5665 6061 742 8 545 8 58 64 5150 7772 5571 6619 44 99 76 74 5386 76 64 443 7 ... layer 96 Silicon Carbide – Materials, Processing and Applications in Electronic Devices and the formation of optically active Si−C-bonds A certain...

Ngày tải lên: 19/06/2014, 11:20

... aluminium -silicon eutectic alloy using drainage curves obtained during gas pressure infiltration at 750 ºC 134 Silicon Carbide – Materials, Processing and Applications in Electronic Devices With relatively ... alloys Materials Science & Engineering A, Vol.4 95, (January 2008), pp 276-281, ISSN 0921 -50 93 140 Silicon Carbide – Materials, Processing and Applicat...

Ngày tải lên: 19/06/2014, 11:20

... fibres (a) and after different thermal/chemical treatments in order to highlight the SiC fingerprint (b) 160 0 168 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Fig ... well ordered SiC 166 Silicon Carbide – Materials, Processing and Applications in Electronic Devices surrounded by highly disorderd/amorphous SiC interphase...

Ngày tải lên: 19/06/2014, 11:20

... GRMF in both oxidizing ambient 218 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Fig 11 Determination of growth rate multiplication factor between both terminating ... value of Activation Energy (Ea) in linear region and parabolic region 226 Silicon Carbide – Materials, Processing and Applications in Electronic Devices...

Ngày tải lên: 19/06/2014, 11:20