Micromagnetic simulation on magnetic nanostructures and their applications

... review on the magnetic nanostructures and their applications will be provided in the following sections 1.1 Micromagnetics 1.1.1 Theory of Operation Chapter 1: Introduction Micromagnetic simulation ... description of the time evolution of spin configuration With the help of micromagnetic simulation, we can obtain direct visualization of magnetization configurations, static...

Ngày tải lên: 09/09/2015, 11:30

... Mathematical Analysis and Applications, vol 319, no 2, pp 802–814, 2006 W N Li and W Sheng, Some nonlinear integral inequalities on time scales, ” Journal of Inequalities and Applications, Article ID 70465, ... estimates on integral inequalities with time scale,” Journal of Inequalities in Pure and Applied Mathematics, vol 7, no 4, article 143, p 8, 2006 W N...

Ngày tải lên: 21/06/2014, 18:20

... quasi-metric on E Let ρ be a quasi-metric on E and γ a non-negative symmetric function on E × E such that γ ∼ ρ, then γ is a quasi-metric on E Let ρ1 and ρ2 be two quasimetrics on E, then for ... Inequalities and Applications 3.4 On the Operator − 1/A Au 11 on 0, with u u1 Let A be a continuous function on 0, , which is positive and differentiable on 0, We assume th...

Ngày tải lên: 22/06/2014, 03:20

... measure, Hausdorff dimension, packing measure, packing dimension, Minkowski contents, box dimensions, and modified box dimensions Let U be a nonempty subset of Rn As usual, one may define the diameter ... helpful comments and a careful reading of the manuscript D.-C Chang and Y Xu 17 References [1] K Falconer, Fractal Geometry: Mathematical Foundations and Applications, John Wiley & S...

Ngày tải lên: 22/06/2014, 22:20

... IONP@PC and IONP@mC-600 Insets of C and F: SAED patterns of IONP@PC and IONP@mC-600 95 Figure 6-4: Particle size distributions of (A) IONP@PC and (B) IONP@mC-600 96 Figure 6-5 TEM images of IONP@mC-600 ... iron oxides and lithium was in the 1980s.[51] However, the nature of the reaction was not clear until J M Tarascon and his coworkers reported the conversion reaction...

Ngày tải lên: 10/09/2015, 09:30

... SYNTHESIS OF SUPERPARMAGNETIC NANOSTRUCTURES AND THEIR MAGNETIC RESONANCE IMAGING APPLICATIONS CHOO SHI GUANG, EUGENE (B APPL SCI., HONS), NUS A THESIS SUBMITTED FOR THE DEGREE OF DOCTOR OF ... Study of Magnetic Nanostructures for Off -Resonance MR Spectroscopic Imaging 127  6.1  Motivations and Design of Experiment 127  6.2  Preparation and Characterizati...

Ngày tải lên: 09/09/2015, 17:55

... represents the local topological status of the wireless ad hoc network To a certain extent, the node locations and their corresponding degrees would affect the configuration of the wireless ad hoc network ... from (3) and reflects the distribution of A in the Y − Z plane Thus, the problem in three-dimensional space can be reduced to the combination of...

Ngày tải lên: 22/06/2014, 22:20

... properties of the InGaN quantum structures, including InGaN/ GaN quantum wells and InGaN quantum dots 1. 3 InGaN/ GaN quantum wells and quantum dots InGaN is an important alloy for fabricating III-nitride ... Electron mobility μ (cm2 V -1 s -1) Thermal conductivity χ (W K -1 cm -1) 9.0 4.0 9.7 3.0 12 .8 0.4 11 .8 0.25 3.0 2.0 2.0 1. 0 13 50 800 6000 13 00 1...

Ngày tải lên: 14/09/2015, 14:02

... second) is used, and there are 25 6 or 5 12 samples in each scanning Here, one sample represents one line of scanning, which then consists of 25 6 or 5 12 sampling points 2. 3.4 Scanning electron microscopy ... excition transition and bound exciton transition Eb is the free exciton binding energy and Ebx is the bound exciton binding energy In addition to the radiative transitio...

Ngày tải lên: 14/09/2015, 14:02

... Section 3. 3 will be dedicated to the study on the effects of V-pits on the morphological and optical properties of InGaN/ GaN quantum wells Finally, in Section 3. 4, the InGaN/ GaN quantum dot saturable ... this study will only be focused on the saturable absorbers and SESAMs operating in the blue region In this chapter, Section 3. 1 will be focused on...

Ngày tải lên: 14/09/2015, 14:02

... coating After the separate study and calibration, the DBR and AR coatings were finally incorporated with the InGaN/ GaN 8-QW saturable absorber presented in 148 Chapter Design & Fabrication of GaN- based ... the GaN- based monolithic DBRs as shown in Fig 4. 1 [Ponce2003; Moustakas2001; Waldrip2001; Yao20 04; Lin20 04] In addition, in Fig 4. 10, the oscillation fringes...

Ngày tải lên: 14/09/2015, 14:02

... fabricated by the InGaN/ GaN 8-QW saturable absorber, as discussed in Chapter 5. 1 Simulation First of all, the origin of the interference fringes within the stopband of the GaN- based SESAM was investigated ... Furthermore, after thinning the GaN buffer, the period of the interference-induced oscillation fringes was increased and there was only one interference minimum falling...

Ngày tải lên: 14/09/2015, 14:02

... quantum wells and quantum dots, operating in the blue wavelength region were investigated For InGaN/ GaN quantum well saturable absorbers, a novel and convenient method to reduce the absorption ... and contributed to different PL emission bands For quantum dot saturable absorbers, in this work, a 3-layer InGaN quantum dot sample was fabricated and its nonlinear...

Ngày tải lên: 14/09/2015, 14:02

... Ta ratio, (ii) Co- Ta of 15% Ta ratio, (iii) Co- Ta of 20% Ta ratio and (iv) Co- Ta of 25% Ta ratio 68 Fig 4.6.4 MFM images of (i) Co, (ii) Co- Ta (5%), (iii) Co- Ta (10%), (iv) Co- Ta (15%), (v) Co- Ta ... Co- Ta (20%) and (vi) Co- Ta (25%) 69 Fig 4.6.5 TEM images showing the crystal structures of (i) Co- Ta of 10% Ta ratio, (ii) Co-...

Ngày tải lên: 10/11/2015, 11:35

... Cl (1.6) (1.7) In Equations (1.6) and (1.7) Ll and Cl represent the inductance and capacitance per unit length of the line, and ε and µ are the permittivity and permeability of the transmission ... total reluctance of the magnetic circuit, and N is the number of turns in the coil The ratio on the right-hand side of Equation (1.25) 24 MEMS AND RF MEMS is the electromechan...

Ngày tải lên: 22/12/2013, 20:18