analog bicmos design practices and pitfalls phần 9 pdf

... Semiconductor, May 9, 199 6. [4] Ronald Troutman, Latchup in CMOS Technology: The Problem and Its Cure, Kluwer Academic Publishers, 198 6. [5] Neil Weste and Kamran Eshraghian, Principles of CMOS VLSI Design, ... Semiconductor, Jan 21, 199 7. [2] Arthur B. Glasser and Gerald E. Subak-Sharpe, Inte- grated Circuit Engineering, Addison-Wesley, Reading, MA, 197 9. [3] Denis Galipeau, CMO...

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... pp. 690 -702 [7] Amerasekera, A., Hannemann, M., and Schofield, P., 199 2 ESD failure modes: characteristics, mechanisms and process influences, IEEE Trans. Electron Devices 39, pp. 430-436 9. 1.10 ... 12.5 V? chapter 9 Design Practices Component matching and the protection from electrostatic discharge are important design practices. Accurate component matching reduces costs an...

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... Comparators 6.1Hysteresis 6.1.1HysteresiswithaResistorDivider 6.1.2HysteresisfromTransistorCurrentDensity 6.1.3ComparatorwithV be -DependentHysteresis 3.3 9. 1.3Temperature 9. 1.4Stress 9. 1.5ContactPlacementforMatching 9. 1.6BuriedLayerShift 9. 1.7ResistorPlacement 9. 1.8IonImplantResistorConductivityModulation 9. 1.9TubBiasAffectsResistorMatch 9. 1.10ContactResistanceUpsetsMatching...

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... B, and C in Equations 1.56, 1.57, and 1.58: I nc = A  e V be V T − e V bc V T  I pe = B  e V be V T − 1  (1. 59) I pc = C  e V bc V T − 1  Plugging Equations 1. 59 into Equations 1.53 and ... of NMOS and PMOS transistors is useful in the design of analog and digital circuits. Figure 1.15 CMOS structure. 1.6.1 Simple MOS Model A simple model for the MOS transistor, useful...

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... Wiley-Interscience, New York, 196 9. [3] Edward S. Yang, Microelectronic Devices, McGraw-Hill, New York, 198 8. [4] P.R. Gray and R.G. Meyer, Analysis and Design of Analog Inte- grated Circuits, ... Vo? References [1] S. M. Sze and J. C. Irvin, Resistivity, Mobility and Impurity Levels in GaAs, Ge, and Si at 300 ◦ K, Solid-State Electronics, Vol 11, pp. 599 -602, 196 8. [2] S....

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... Circuit Design, Layout and Simu- lation, IEEE Press, New York, c. 199 8. [2] Gray, Paul R., and Mayer, Robert G., Analysis and Design of Analog Integrated Circuits, 2nd edition, John Wiley and Sons, ... by I c (Q1) =98 .5µA − I b (Q1) = 98 .5µA − I c (Q1) β or 1.01I c =98 .5µA This gives I c (Q1) =97 .525µA. Using Kirchoff’s Voltage Law at the bases of Q1 and Q2, we find V be (...

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... Simple Three-Terminal IC Bandgap Reference, IEEE Journal of Solid State Circuits, Volume SC -9, No. 6, Decem- ber 197 4. [2] P.R. Gray and R.G. Meyer, Analysis and Design of Analog Inte- grated Circuits, ... Circuit 513: A Bandgap Referenced Regulator, Cherry Semiconductor Memorandum, 198 7. [4] C. Tuozzolo, Voltage References and Temperature Compensation, Cherry Semiconductor Memor...

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... I 2 and I 3 ? References [1] Baker, R. Jacob, et al, CMOS Circuit Design, Layout and Simu- lation, IEEE Press, New York, c. 199 8. [2] Gray, Paul R., and Mayer, Robert G., Analysis and Design of Analog ... John Wiley and Sons, Inc., New York, c. 198 4. [3] Millman, Jacob, and Grabel, Arvin, Microelectronics, 2nd edition, McGraw-Hill Book Company, New York, c. 198 7. [4] Soclo...

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... Memoran- dum, 199 7. [3] Gray, Paul R., and Mayer, Robert G., Analysis and Design of Analog Integrated Circuits, 2nd edition, John Wiley and Sons, Inc., New York, c. 198 4. [4] Millman, Jacob, and Grabel, ... I C (N1) = 100µA, or I C (N1) = 49. 505µA Then I C (N2) = I C (P 2)= 49. 505µA and I C (P 1)=50. 495 µA. The difference between V 1 and V 2 is V dif = (26mV )ln  50. 495...

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... Circuit Design, Layout and Simu- lation, IEEE Press, New York, c. 199 8. [2] Gray, Paul R., and Mayer, Robert G., Analysis and Design of Analog Integrated Circuits, 2nd edition, John Wiley and Sons, ... sinusoidal input of 5V (zero to peak). 9. UsethecircuitinFigure7.8withR L =20KΩ, R 1 =5KΩ and VCC =5V . Let β NPN = β PNP = 100 and I S(NPN) = 200E − 18A. What are V o(max)...

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