analog bicmos design practices and pitfalls phần 6 pps
analog bicmos design practices and pitfalls phần 6 pps
... 1998.
[2] Gray, Paul R., and Mayer, Robert G., Analysis and Design of
Analog Integrated Circuits, 2nd edition, John Wiley and Sons, Inc.,
New York, c. 1984.
[3] Millman, Jacob, and Grabel, Arvin, Microelectronics, ... and output resistance?
13.FortheCMOSinvertershowninFigure5.28,thebiascurrentis
60 µA. KP = 60 0 µA/V
2
for the n-channel FET and 300 µA/V
2
for the p-channel F...
analog bicmos design practices and pitfalls phần 3 pps
... Vo?
References
[1] S. M. Sze and J. C. Irvin, Resistivity, Mobility and Impurity Levels
in GaAs, Ge, and Si at 300
◦
K, Solid-State Electronics, Vol 11, pp.
599 -60 2, 1 968 .
[2] S. M. Sze, Physics ... Wiley-Interscience,
New York, 1 969 .
[3] Edward S. Yang, Microelectronic Devices, McGraw-Hill, New York,
1988.
[4] P.R. Gray and R.G. Meyer, Analysis and Design of Analog Inte-...
analog bicmos design practices and pitfalls phần 8 ppsx
... Circuit Design, Layout and Simu-
lation, IEEE Press, New York, c. 1998.
[2] Gray, Paul R., and Mayer, Robert G., Analysis and Design of
Analog Integrated Circuits, 2nd edition, John Wiley and Sons, ... exercise 6 for a sinusoidal input of 5V (zero to peak).
9.UsethecircuitinFigure7.8withR
L
=20KΩ, R
1
=5KΩ and
VCC =5V . Let β
NPN
= β
PNP
= 100 and I
S(NPN)
= 200E −
18A. Wha...
analog bicmos design practices and pitfalls phần 10 pdf
... 1981, p. 86.
[4] Charvaka Duvvury and Ajith Amerasekera, State-of-the-art issues
for technology and circuit design of ESD protection in CMOS ICs,
Semiconductor Science and Technology, June 96, pp. ... 12.5 V?
chapter 9
Design Practices
Component matching and the protection from electrostatic discharge are
important design practices. Accurate component matching reduces costs...
analog bicmos design practices and pitfalls phần 1 potx
... Electrical and Computer Engineering
University of Rhode Island
Denis P. Galipeau
Cherry Semiconductor Corp.
Practices and Pitfalls
Analog
BiCMOS
DESIGN
6. 2TheBandgapReferenceComparator
6. 3OperationalAmplifiers
6. 4AProgrammableCurrentReference
6. 5ATriangle-WaveOscillator
6. 6AFour-BitCurrentSummingDAC
6. 7TheMOSCase
6. 8ChapterExercises
7AmplifierOutputStages
7.1TheEmitt...
analog bicmos design practices and pitfalls phần 2 doc
... of NMOS and PMOS transistors
is useful in the design of analog and digital circuits.
Figure 1.15 CMOS structure.
1 .6. 1 Simple MOS Model
A simple model for the MOS transistor, useful for hand calculations, ... 1 .60 and 1 .61 become
I
E
= −I
ES
(e
V
be
V
T
− 1) − α
R
I
CS
(1 .62 )
I
C
= α
F
I
ES
(e
V
be
V
T
− 1) + I
CS
(1 .63 )
Neglecting the small leakage current I
CS
I
E
= −I
ES...
analog bicmos design practices and pitfalls phần 4 docx
... Circuit Design, Layout and Simu-
lation, IEEE Press, New York, c. 1998.
[2] Gray, Paul R., and Mayer, Robert G., Analysis and Design of
Analog Integrated Circuits, 2nd edition, John Wiley and Sons, ... differences in emitter
areas A
1
and A
2
and for resistors R
1
and R
2
. Assume ideal tran-
sistors.
8.UsetheschematicinFigure3.6todesignaWidlarcurrentmirror.
I
ref
=75µA and...
analog bicmos design practices and pitfalls phần 5 potx
... about 36mV .IfR
2
equals 450 ohms, I will equal 80µA and R
1
should
equal about 3.7K. The drop across R
1
is 2IR
1
=2x10x10
6
x3.7x10
3
=
0.6V .
The bandgap voltage V
bg
is 0 .6+ V
be
2
=0 .6+ 0 .65 ... Simple Three-Terminal IC Bandgap Reference,
IEEE Journal of Solid State Circuits, Volume SC-9, No. 6, Decem-
ber 1974.
[2] P.R. Gray and R.G. Meyer, Analysis and Design of Analog...
analog bicmos design practices and pitfalls phần 7 potx
... 1)
1.02
=23.4µA
I
C
(P 1) = 38 .67 9µA
Then I
C
(P 2) = 61 .321µA and V
dif
=0.026Vln (61 .321/38 .67 9) = 11.98mV .
The same method can be used to identify more points in the transfer
curve(plottedinFigure6.5).
At this ... 1997.
[3] Gray, Paul R., and Mayer, Robert G., Analysis and Design of
Analog Integrated Circuits, 2nd edition, John Wiley and Sons, Inc.,
New York, c. 1984....
analog bicmos design practices and pitfalls phần 9 pdf
... May 9, 19 96.
[4] Ronald Troutman, Latchup in CMOS Technology: The
Problem and Its Cure, Kluwer Academic Publishers,
19 86.
[5] Neil Weste and Kamran Eshraghian, Principles of CMOS
VLSI Design, Addison ... part, and out the analog ground. The pulse created a voltage
across the inductance of the wire connecting the analog ground to the
power supply. This produced a differential vol...