analog bicmos design practices and pitfalls phần 1 potx
analog bicmos design practices and pitfalls phần 1 potx
... width and length. The sheet b) From Equation 1. 22, we have, for the p-region 0.638 +10 = qx 2 p N 2 A 2 1 10 15 + 1 10 16 10 .638 1. 1 2 qN A = x 2 p x p =3.5x10 −4 cm =3.5µm From Equation 1. 13, ... conduction and valence bands. The Fermi level shown corresponds to n-type silicon. Practices and Pitfalls Analog BiCMOS DESIGN Contents 1Devices 1. 1Introducti...
Ngày tải lên: 14/08/2014, 04:21
analog bicmos design practices and pitfalls phần 5 potx
... 80µA and R 1 should equal about 3.7K. The drop across R 1 is 2IR 1 =2x10x10 −6 x3.7x10 3 = 0.6V . The bandgap voltage V bg is 0.6+V be 2 =0.6+0.65 = 1. 25V . Feedback Mechanism Transistors N 1 , ... with respect to temperature and setting it equal to zero and rearranging terms 2 R 1 R 2 ln[n]= 0.002 8.62x10 −5 R 1 R 2 = 11 .6 ln[n] If n =4, R 1 R 2 =8.4. Example Fortheba...
Ngày tải lên: 14/08/2014, 04:21
analog bicmos design practices and pitfalls phần 7 potx
... − I C (P 1) 1. 02 =23.4µA 10 0µA − I C (P 1) − I C (P 1) 1. 02 =23.4µA I C (P 1) = 38.679µA Then I C (P 2) = 61. 3 21 A and V dif =0.026Vln( 61. 3 21/ 38.679) = 11 .98mV . The same method can be used to identify ... +85 ◦ C? 7.ForthecomparatorinFigure6 .11 , assumeI S = 200E -18 A and β = 10 0. Choose K, R1, R2 and R3 such that the nominal threshold is 1. 250V ± 1% . Size R1...
Ngày tải lên: 14/08/2014, 04:21
analog bicmos design practices and pitfalls phần 10 potx
... and E .16 4 numbers and, 14 1 14 2, 14 8 gatekeepers and, 13 5, 14 8 15 1 H.323 IDs and, 14 1 14 2, 14 8 call routing, PBX systems and, 15 call processing and, 8–9 international calls and, 10 11 call transformations, ... Controller (MC), 11 6 Multipoint Controller Units (MCUs), 48, 11 6 11 7 cascading, 10 2, 11 7 11 9 IP/VC 3 510 , 11 6, 382 IP/VC 3540, 11 6 11 7, 382...
Ngày tải lên: 14/08/2014, 04:21
analog bicmos design practices and pitfalls phần 10 pdf
... their ratio is R 1 R 2 = R 1 +∆R 1 R 2 +∆R 2 = 1+ ∆R1 R 1 1+ ∆R 2 R 2 = 1 − ∆W 1 W 1 1 − ∆W 2 W 2 ≈ 1 − ∆W 1 − ∆W 2 W =1 2∆W W (9.5) There is a tradeoff between resistor size and matching, the ... V o . Answer IftheopampinFigure9 .14 isideal: V o = V bg 1+ R 1 R 2 In this example, V bg =1. 25 V , and R 1 /R 2 = 3 [1 ± .0 01] , (for a 0 .1% error in the re...
Ngày tải lên: 14/08/2014, 04:21
analog bicmos design practices and pitfalls phần 2 doc
... B, and C in Equations 1. 56, 1. 57, and 1. 58: I nc = A e V be V T − e V bc V T I pe = B e V be V T − 1 (1. 59) I pc = C e V bc V T − 1 Plugging Equations 1. 59 into Equations 1. 53 and 1. 54: I E = ... 1. 11 Ebers-Moll model I F = I ES (e V be V T − 1) I R = I CS (e V bc V T − 1) . Equations 1. 60 and 1. 61 describe the Ebers-Moll model. A schematic diag...
Ngày tải lên: 14/08/2014, 04:21
analog bicmos design practices and pitfalls phần 3 pps
... area Ibe1 Kqb − Ibc1 Kqb − Ibc1 BR − Ibc2 (2 .15 ) Ibe1=IS exp V BE NF V T − 1 (2 .16 ) Ibe2=ISE exp V BE NE V T − 1 (2 .17 ) Ibc1=IS exp V bc NR V T − 1 (2 .18 ) Ibc2=ISC exp V bc NC V T − 1 (2 .19 ) Kqb ... exp V bc NC V T − 1 (2 .19 ) Kqb = Kq1 1+ (1+ 4Kq2) NK 2 (2.20) where Kq1 describes the Early effect Kq1= 1 1 − Vbc VAF − Vbe VAR and Kq2 describes...
Ngày tải lên: 14/08/2014, 04:21
analog bicmos design practices and pitfalls phần 4 docx
... equation: I c = I s e V be V T 1+ V ce V A (3 .11 ) and V be (Q2) = V T ln 15 0E − 6 200E − 18 =0. 710 9V Solving the KVL equation, we find R = V be (Q2) − V be (Q1) 97.525µA = 11 5Ω NotethatplacingaresistorintheemitterofQ2asshowninFigure3.6 would ... diode-connected it is modeled as 1/ gm 1 . The quantity r b is defined as β/gm. Since r b is greater than 1/ gm 1 by a fact...
Ngày tải lên: 14/08/2014, 04:21
analog bicmos design practices and pitfalls phần 6 pps
... and common-mode output signals v od = v o1 − v o2 and v oc = v o1 − v o2 2 We can identify v o1 and v o2 in terms of v od and v oc v o1 = v od 2 + v oc and v o2 = − v od 2 + v oc The differential-mode ... Circuit Design, Layout and Simu- lation, IEEE Press, New York, c. 19 98. [2] Gray, Paul R., and Mayer, Robert G., Analysis and Design of Analog Integrated Circuits, 2nd...
Ngày tải lên: 14/08/2014, 04:21
analog bicmos design practices and pitfalls phần 8 ppsx
... output. The opamp output is V o = V bg R 1 + R 2 R 1 − V g R 2 R 1 (8 .1) whereinFigure8 .1, R 1 , R 2 , V bg and V o are 10 0 Ohms, 300 Ohms, 1. 2 V and 5 V, respectively. Remedies r AddingaKelvinline,asshowninFigure8.2,by-passestheground line ... . References [1] Baker, R. Jacob, et al., CMOS Circuit Design, Layout and Simu- lation, IEEE Press, New York, c. 19 98. [2...
Ngày tải lên: 14/08/2014, 04:21