Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 12 docx
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 12 docx
... [369], self-or-
ganized growth of GaN quantum dots [370] or Co nanoparticles [371]. The most
advanced SETs, however, are devices manufactured by classical microstructura-
tion techniques and based ... quite easily im-
plementing multi-value-logic systems using multi-peak resonance RTDs. In Fig.
9.5, the circuit of a digital counter implemented with just three HBTs and one
RTD and t...
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 14 pdf
... Si-H 19
– SiOMe 112
bottom up method 128
Bragg reflection 122 , 162
Bragg reflector 220
Bragg-Brentano diffractometer 79
bubble 19
bulk isolation 33
bundling, atomic 112
C
E-cage 129 ... combining single-electron and metal–oxide–semiconductor tran-
sistors. Appl Phys Lett, vol 79, p 3818
382. Knobel R, Yung CS, Cleland AN (2001) Single-electron transistor as a radio-fre-
qu...
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 2 pot
... measured
and analyzed is given in Figs. 3.11 and 3 .12 [27].
Fig. 3.11 Doping and generation rate profiles after phosphor implantation [27]
Fig. 3 .12 (a) Generation rate profiles (full curves) and ... ap-
proximately one wavelength of the light used. In this context, “light” means any-
thing that can be described by a wavelength. This includes x-rays, synchrotron ra-
diation, ele...
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 3 pdf
... the active
layer, e.g., n-type on p-type substrate, silicon-on-sapphire (SOS), and silicon-on-
oxide (SOI). The latter includes versions like (i) oxygen implantation and SiO
2
formation, (ii) ... It has been a long-nourished hope to develop opto-elec-
tronic components by means of standard silicon technology. However, silicon is
not suitable because of its indirect band gap. Therefore,...
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 5 doc
... four-probe measurement, and the two-probe
measurement is applied. Here, the feed current and the applied voltage are meas-
ured in only one pair of points. A correction factor between V / I and ... deflected from their straight-line course between the elec-
trodes. The direction of the Lorentz force is perpendicular to the current and origi-
nal path (giben by v) and also perpend...
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 8 pptx
... con-
ductive channels from each other and hence really ensuring a quasi-one-dimen-
sional current conduction is difficult. Besides, the zeolite material loaded with
potassium is very reactive and ... production of one or quasi-one-dimensional electrical conduct-
ing structures (1D nanowires) metal-loaded zeolites with suitable channel struc-
tures are suggested as promising candidates [1...
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 9 doc
... previous line widths. X-ray lithography may be a solu-
tion for structure widths between 70 and 40 nm. Presumably, finer structures can-
not be imaged.
7.3.7 Evaluation and Future Prospects
The ... the wafer sur-
face. Thus, by diffraction or interference effects resolution improvements in cor-
ners, on points, and particularly with isolated lines can be obtained. The distribu-
tion o...
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 10 pptx
... remain depleted be-
tween the p and n regions. Therefore, a p-type line in a n-type area (e.g., a two-
dimensional electron gas; 2DEG) works like two lateral anti-serial switched di-
odes. Thus, ... Dimming and de-
flecting voltages can range from some 10 to some 100 V and must be available as
a wide-band (MHz to GHz) in order to achieve high dose accuracies and writing
rates.
Navig...
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 11 ppt
... 180 165 150 130 120 110 100 70 50 35
MPU-Gate,
nm
140 120 100 90 80 70 65 45 32 22
Lithography KrF KrF-
RET
ArF
ArF-
RET
F
2
F
2
-
RET
EUV
IPL
EPL
EUV
IPL
EPL
7.7 Near-Field Optics 197 ... the one hand. On the other hand, the ger-
manium doping causes a modification of the band structure and enables an ex-
Fig. 8.10 Cross section of a bipolar transistor, manufactured in self-ad...