Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 12 docx
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 12 docx
... [369], self-or- ganized growth of GaN quantum dots [370] or Co nanoparticles [371]. The most advanced SETs, however, are devices manufactured by classical microstructura- tion techniques and based ... quite easily im- plementing multi-value-logic systems using multi-peak resonance RTDs. In Fig. 9.5, the circuit of a digital counter implemented with just three HBTs and one RTD and t...
Ngày tải lên: 12/08/2014, 02:23
Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 14 pdf
... Si-H 19 – SiOMe 112 bottom up method 128 Bragg reflection 122 , 162 Bragg reflector 220 Bragg-Brentano diffractometer 79 bubble 19 bulk isolation 33 bundling, atomic 112 C E-cage 129 ... combining single-electron and metal–oxide–semiconductor tran- sistors. Appl Phys Lett, vol 79, p 3818 382. Knobel R, Yung CS, Cleland AN (2001) Single-electron transistor as a radio-fre- qu...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 2 pot
... measured and analyzed is given in Figs. 3.11 and 3 .12 [27]. Fig. 3.11 Doping and generation rate profiles after phosphor implantation [27] Fig. 3 .12 (a) Generation rate profiles (full curves) and ... ap- proximately one wavelength of the light used. In this context, “light” means any- thing that can be described by a wavelength. This includes x-rays, synchrotron ra- diation, ele...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 3 pdf
... the active layer, e.g., n-type on p-type substrate, silicon-on-sapphire (SOS), and silicon-on- oxide (SOI). The latter includes versions like (i) oxygen implantation and SiO 2 formation, (ii) ... It has been a long-nourished hope to develop opto-elec- tronic components by means of standard silicon technology. However, silicon is not suitable because of its indirect band gap. Therefore,...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 5 doc
... four-probe measurement, and the two-probe measurement is applied. Here, the feed current and the applied voltage are meas- ured in only one pair of points. A correction factor between V / I and ... deflected from their straight-line course between the elec- trodes. The direction of the Lorentz force is perpendicular to the current and origi- nal path (giben by v) and also perpend...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 8 pptx
... con- ductive channels from each other and hence really ensuring a quasi-one-dimen- sional current conduction is difficult. Besides, the zeolite material loaded with potassium is very reactive and ... production of one or quasi-one-dimensional electrical conduct- ing structures (1D nanowires) metal-loaded zeolites with suitable channel struc- tures are suggested as promising candidates [1...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 9 doc
... previous line widths. X-ray lithography may be a solu- tion for structure widths between 70 and 40 nm. Presumably, finer structures can- not be imaged. 7.3.7 Evaluation and Future Prospects The ... the wafer sur- face. Thus, by diffraction or interference effects resolution improvements in cor- ners, on points, and particularly with isolated lines can be obtained. The distribu- tion o...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 10 pptx
... remain depleted be- tween the p and n regions. Therefore, a p-type line in a n-type area (e.g., a two- dimensional electron gas; 2DEG) works like two lateral anti-serial switched di- odes. Thus, ... Dimming and de- flecting voltages can range from some 10 to some 100 V and must be available as a wide-band (MHz to GHz) in order to achieve high dose accuracies and writing rates. Navig...
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Nanotechnology and Nanoelectronics - Materials, Devices, Measurement Techniques Part 11 ppt
... 180 165 150 130 120 110 100 70 50 35 MPU-Gate, nm 140 120 100 90 80 70 65 45 32 22 Lithography KrF KrF- RET ArF ArF- RET F 2 F 2 - RET EUV IPL EPL EUV IPL EPL 7.7 Near-Field Optics 197 ... the one hand. On the other hand, the ger- manium doping causes a modification of the band structure and enables an ex- Fig. 8.10 Cross section of a bipolar transistor, manufactured in self-ad...
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