The Materials Science of Thin Films 2011 Part 8 pps
The Materials Science of Thin Films 2011 Part 8 pps
... direction). the GB than there is into the matrix of the grains. The ratio of these two fluxes can be estimated through the use of Eqs. 8- 2 and 8- 3 for FCC metals; i.e., nb 6Db 3 x 8. 1 TM - ... consumes the Q phase at one interface and the @ phase at the other interface. It is instructive to begin with the simplified analysis of the kinetics of compound growth based on Fig. 8- 8. Only ... ordering of the metal layers. The stoichiometry of the peak shoulders in the annealed films corresponds to the compounds Au,AI and AuAI,, and the high-energy tail is indicative of Au...
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The Materials Science of Thin Films 2011 Part 2 ppsx
... in the presence of an applied field. logarithm of the rate is plotted on the ordinate and the reciprocal of the absolute temperature is plotted along the abscissa. The slope of the resulting ... continuous state of random motion, which is intimately dependent on the temperature of the gas. During their motion the gas particles collide with each other as well as with the walls of the confining ... characteristic of both the diffusing species and the matrix in which transport occurs. The extent of 50 Vacuum Science and Technology is that the large number of atoms or molecules of the gas...
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The Materials Science of Thin Films 2011 Part 10 pps
... functional within bulk matter. Therefore, the interaction energy typically follows the behavior de- picted in Fig. l-8b as a function of separation distance regardless of the type of materials ... by the rupture of the ultrathin tunnel barrier due to the mismatch in thermal expansion between Pb alloys and the Si substrate on which the device is built. During temperature cycling the thermal ... overall capacitance is the product of the two individual (oxide and semiconductor) capacitances divided by their sum.) Note that now the bands bend the other way -the slope of the oxide conduction-band...
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The Materials Science of Thin Films 2011 Part 1 ppt
... Fig. 1-8b. The generalized behavior shown is common for all classes of solid materials, regardless of the type of bonding or crystal structure. Although the mathematical forms of the attractive ... discipline of materials science and engineer- ing. A dramatic increase in our understanding of the fundamental nature of materials throughout much of the twentieth century has led to the development ... change of T or P will destroy the three-phase equilib- Thin Films - A Historical Perspective Thin- film technology is simultaneously one of the oldest arts and one of the newest sciences....
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The Materials Science of Thin Films 2011 Part 4 ppt
... view of the MOS field effect transistor structure in Fig. 4-1 indicates the extent to which the technology is employed. Above the plane of the base P-Si wafer, all of the films with the ... (4-34b) Note the use of the perfect gas law and the neglect of the temperature dependence of D. Maintenance of stoichiometry requires that JCd = JTez 9 (4-35) the factor of 2 arising ... requires that the ratio of the vapor pressure in the crucible to that in the vacuum chamber exceed lo4 to 10'. The arrival of ionized clusters with the kinetic energy of the acceleration...
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The Materials Science of Thin Films 2011 Part 5 docx
... estimated in the capillarity theory. The uncertainties are now in i* and E;,. One of the important applications of this theory has been to the subject of epitaxy, where the crystallographic ... transport, the two most likely ones involve self-diffusion through the bulk or via the surface of the islands. In the case of sintering or coalescence of two equal spheres of radius r (Fig. 9b), theoretical ... of the condensate. Shadowing is a phenomenon arising from the geometric constraint imposed by the roughness of the growing film and the line -of- sight impinge- ment of arriving atoms. The...
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The Materials Science of Thin Films 2011 Part 6 doc
... series of post-specimen lenses. The objective lens produces the first image of the object and is, therefore, required to be the most perfect of the lenses. Depending on how the beams reaching the ... Growth of Thin Films, 2.* R. W. Vook, Int. Metals Rev. 27, 209 (1 982 ). 3.* C. A. Neugebauer, in Handbook of Thin- Film Technology, eds. L. I. 4.* K. Reichelt, Vacuum 38, 1 083 (1 988 ). ... discussion of the analysis of diffraction effects is well beyond the scope of this book. Some notion of the correlation between structure and diffraction patterns can be gained from the model of thin...
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The Materials Science of Thin Films 2011 Part 9 pot
... Again on the basis of 384 interdiffusion and Reactions in Thin Films considering the second term on the right-hand side of Eq. 8- 26. For the polarity shown, all terms in parentheses are ... no surprise that the varied mechanical properties of thin films 386 Interdiffusion and Reactions in Thin Films N - Si P-Si Figure 8- 1 8. Schematic diagrams of silicide contacts ... If the normal tensile stress ax = F/A, then the force resolved on these shear planes is F cos 45 = fi /2 F. The area of the shear planes is A /cos 45 = 2/ A. Therefore, the...
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The Materials Science of Thin Films 2011 Part 11 pot
... parallel, to the plane of incidence. Through the use of the Maxwell equations with appropriate interfacial boundary conditions, the amplitudes of the components of the transmitted (&,l, 8, ") ... on whether the 1. spin polarization of electrons, 2. net magnetic moment of the sample, or 3. internal magnetic (hyperfine) field 480 Electrical and Magnetic Properties of Thin Films ... of Thin Dielectric and Semiconductor Films The optical properties of dielectric and semiconductor films are collected in Table 11-2. Practically all of the data are for evaporated films, ...
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The Materials Science of Thin Films 2011 Part 12 pptx
... substrates. The value of K, depends on a number of factors. Most important is the nature of the materials in contact, but the extent and type of lubrication, surface temperature, and nature of the ... consisting of 20 interfaces, each with R = 0.05, the value of T = (0.95)20 = 0.3 58. If, how- ever, R is reduced to 0.01 by means of AR coatings, then T = 0 .81 8. The measured ... wavelengths, depending on whether the refractive index of the film is greater or less than that of the substrate. In the former case the reflectivity is enhanced, whereas in the latter case reflectivity...
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