Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 7 pptx

... Tuller-2001 For R 9 3.225 9 Equation of Motion - Impact of Collisions Assume: • probability of collision in time dt = dt/τ • time varying field F(t) v(t+dt) = ( 1- dt/τ) {v(t) +dv} = ( 1- dt/τ) ... L/Wt = ρ L/A ⇒ρ(οhm-cm) σ = 1/ρ ⇒ σ (οhm-cm) -1 ⇒σ (Siemens/cm) (Test your dimensions: σ=E/j=neµ) Ohms/square ⇒ Note, if L=W, then R= ρ /t independent of magnitude...

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... Eg=1.1eV, and let µ e and µ h be approximately equal at 1000cm 2 /V-sec (very good Si!). σ~10 10 cm -3 *1.602x10 -1 9 *1000cm 2 /V-sec=1.6x10 -6 S/m, or a resistivity ρ of about 10 6 ohm-m max. ... Fitzgerald-1999 ) 7 3.225 11 Density of Thermally Promoted of Carriers ∫ ∞ = c E dEEgEfn )()( Density of electron states per volume per dE Fraction of stat...

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... 13 10 -7 10 -6 10 -5 10 -4 Y-cut σ 0 = 2.1 S cm -1 E A = 105 kJ mol -1 10 4 /T [1/K] σ [S cm -1 ] 900 800 70 0 600 500 T [°C] 13 3.225 13 © H.L. Tuller-2001 Gas Sensors and MEMS ... 23.02.2001 - 27. 02.2001 Steuerdatei: allgas_h2.st g Meßprotokoll: 273 Schematic of Gas Sensor Structure 3.225 12 © H.L. Tuller-2001 MicroElectroMechanical Systems...

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... 1,005 -1 6 -4 0 -5 -4 -3 -2 -1 0 1 donor acceptor -2 0 -1 2 -8 donor doped acceptor doped 2 3.225 15 Designer Wavelengths Variation of band-gap energy with composition x of In 1-x Ga x As. ... conductivity (I. Kosacki and H.L. Tuller, Sensors & Actuators B 2 4-2 5 , 370 (1995).) High Strain (Pb 0.98 La 0.02 (Zr 0 .7 Hf 0.3 ) 1-x Ti x O 3...

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... (xrays) can be ‘particle-like’ • DeBroglie – matter can act like it has a ‘wave-nature’ • Schrodinger, Born – Unification of wave-particle duality, Schrodinger Equation Wave-particle Duality: ... are λ=h/p~10 -8 cm in size • Certain wavelengths of valence electrons will diffract! © E. Fitzgerald-1999 3.225 8 Diffraction Picture of the Origin of Band Gaps • Start with...

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... when you join these together? © E. Fitzgerald-1999 3.225 12 - - + + + + Holes diffuse Electrons diffuse + + + + - - - - + + + + - - + + + + An electric field forms due to ... 3.225 11 The p-n Junction (The Diode) • Note that dopants move the fermi energy from mid-gap towards either the valence band edge (p-type) or the conduction band edge (n-t...

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... − = 1 © E. Fitzgerald-1999 9 3.225 11 Interaction of the d orbitals of a central ion with six ligands in an octahedral arrangement. Octahedral Environment of Transition Metal Ion © ... The splitting of the five 3d orbitals in a tetrahedral and an octahedral ligand field. Note: hen the element is a mid-gap dopant, transitions within this element lead to absorption and/...

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... are:) n=1,2,3,… =0,1,2,…,n-1 m l =- , - +1,…,0,…, , (m s =+ or - 1/2) l l l l 0 -1 3.6eV U(r) © E. Fitzgerald-1999 ) in -1 3.225 9 Diffraction Picture of the Origin of Band Gaps Probability Density=probability/volume ... Electron Model © E. Fitzgerald-1999 5 3.225 5 Metals and Insulators •E F in mid-band area: free e-, metallic •E F near band edge –E F...

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... Temperature dependence of the resonance frequency (f R ) of a resonator device with difference mass loads. 0 100 200 300 400 500 600 70 0 800 1 ,71 1 ,72 1 ,73 1 ,74 1 ,75 1 ,76 1 ,77 Contact 1 (f Co1 ) ... material Material Type χ Paramagnetic +10 -5 -1 0 -4 Diamagnetic -1 0 -8 -1 0 -5 Ferromagnetic +10 5 2 5 3.225 5 © E. Fitzgerald-1999 Microscop...

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... Violet light (ν = 7. 5 x 10 14 Hz) λ = c/ν = 400 nm k=2π/ λ = 1. 57 x 10 7 m -1 ω = 2 πν = 4 .71 x 10 15 s -1 After Livingston ε ) ε (kx- ) ε 6 3.225 23 • Scaling of Si CMOS includes ... e -i(kx-ωt) are all waves e -i(kx-ωt) is the complex one and is the most general real imaginary A Acosθ iAsinθ θ e iθ =cosθ+isinθ © E.A. Fitzgerald-1999 1 3.225 11...

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