Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 4 pps

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 1 doc

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 1 doc

... ⇒ 4 probes © H.L. Tuller-2001 For R 9 3.225 9 Equation of Motion - Impact of Collisions Assume: • probability of collision in time dt = dt/τ • time varying field F(t) v(t+dt) = ( 1- dt/τ) ... L/Wt = ρ L/A ⇒ρ(οhm-cm) σ = 1/ρ ⇒ σ (οhm-cm) -1 ⇒σ (Siemens/cm) (Test your dimensions: σ=E/j=neµ) Ohms/square ⇒ Note, if L=W, then R= ρ /t independent of magnitude of L...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 5 ppt

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 5 ppt

... Eg=1.1eV, and let µ e and µ h be approximately equal at 1000cm 2 /V-sec (very good Si!). σ~10 10 cm -3 *1.602x10 -1 9 *1000cm 2 /V-sec=1.6x10 -6 S/m, or a resistivity ρ of about 10 6 ohm-m max. ... Si: . 046 eV • P donor in Si: 0. 044 eV • As donor in Si: 0. 049 © E. Fitzgerald-1999 3.225 18 The Power of Doping • Can make the material n-type or p-type: Hydrogeni...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 10 pps

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 10 pps

... 13 10 -7 10 -6 10 -5 10 -4 Y-cut σ 0 = 2.1 S cm -1 E A = 105 kJ mol -1 10 4 /T [1/K] σ [S cm -1 ] 900 800 700 600 500 T [°C] 13 3.225 13 © H.L. Tuller-2001 Gas Sensors and MEMS ... •Smart sensors 3.225 14 © H.L. Tuller-2001 Microhotplate 7 4 3.225 7 © H.L. Tuller-2001 0 5 10 15 20 25 30 35 1E-5 1E -4 1E-3 0,01 0,1 T = 850°C X=0.03 X=0.0...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 9 pps

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 9 pps

... (Ωcm) -1 ) T = 800 °C log(pO 2 / bar) 0.995 1,005 -1 6 -4 0 -5 -4 -3 -2 -1 0 1 donor acceptor -2 0 -1 2 -8 donor doped acceptor doped 2 3.225 15 Designer Wavelengths Variation of ... Wavelengths Variation of band-gap energy with composition x of In 1-x Ga x As. © H.L. Tuller, 2001 3.225 16 Band-Gap Colors Mixed crystals of yellow cad...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 3 pot

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 3 pot

... (xrays) can be ‘particle-like’ • DeBroglie – matter can act like it has a ‘wave-nature’ • Schrodinger, Born – Unification of wave-particle duality, Schrodinger Equation Wave-particle Duality: ... E. Fitzgerald-1999 3.225 18 Ψ must be able to represent everything from a particle to a wave (the two extremes) Unification: Wave-particle Duality wave particle ( tkxi Ae ω− =Ψ k and p kn...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 6 pps

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 6 pps

... when you join these together? © E. Fitzgerald-1999 3.225 12 - - + + + + Holes diffuse Electrons diffuse + + + + - - - - + + + + - - + + + + An electric field forms due to ... 3.225 11 The p-n Junction (The Diode) • Note that dopants move the fermi energy from mid-gap towards either the valence band edge (p-type) or the conduction band edge (n-t...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 8 pdf

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 8 pdf

... metastable relative positions of positive and negative ions © E. Fitzgerald-1999 3.225 4 Ferroelectrics Applications • Capacitors • Non-volatile memories • Photorefractive materials © H.L. Tuller, ... − = 1 © E. Fitzgerald-1999 9 3.225 11 Interaction of the d orbitals of a central ion with six ligands in an octahedral arrangement. Octahedral Environment of Tra...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 4 pps

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 4 pps

... are:) n=1,2,3,… =0,1,2,…,n-1 m l =- , - +1,…,0,…, , (m s =+ or - 1/2) l l l l 0 -1 3.6eV U(r) © E. Fitzgerald-1999 ) in -1 3.225 9 Diffraction Picture of the Origin of Band Gaps Probability Density=probability/volume ... Electron Model © E. Fitzgerald-1999 5 3.225 5 Metals and Insulators •E F in mid-band area: free e-, metallic •E F near band edge –E F...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 11 potx

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 11 potx

... HAMABA B B 2 2 4 4 444 ~ = Φ =       ===Φ L increased by ~χ due to magnetic material Material Type χ Paramagnetic +10 -5 -1 0 -4 Diamagnetic -1 0 -8 -1 0 -5 Ferromagnetic ... = 14 41 MKS: B = µ 0 (H+M) = µ 0 nI + µ 0 M µ r = B/ µ 0 H = 1 + (M/H) = 1 + χ m Magnetic Permeability and Susceptibility 4 3.225 4 © E. Fitzgerald-199...
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Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 2 pot

Materials Science and Engineering - Electronic and Mechanical Properties of Materials Part 2 pot

... x 10 14 Hz) λ = c/ν = 40 0 nm k=2π/ λ = 1.57 x 10 7 m -1 ω = 2 πν = 4. 71 x 10 15 s -1 After Livingston ε ) ε (kx- ) ε 6 3.225 23 • Scaling of Si CMOS includes conductivity engineering ... e -i(kx-ωt) are all waves e -i(kx-ωt) is the complex one and is the most general real imaginary A Acosθ iAsinθ θ e iθ =cosθ+isinθ © E.A. Fitzgerald-1999 1 3.225...
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