Electronic Materials Part 10 ppt

... 0 0 -10 0 10 20 30 40 50 60 70 80 90 100 110 -10 0 10 20 30 40 50 60 70 80 90 100 110 MFC2 Temp NO2 NH3 Feuchte CO NO2kl H2 Pt -100 resistance / Ω Gas flow / sccm time / h 0 20 0 0 0 100 k Temp:360C, ... room temperature conductivity: σ = 4.4 10 -18 S cm -1 8 9 10 11 12 13 10 -7 10 -6 10 -5 10 -4 Y-cut σ 0 = 2.1 S cm -1 E A = 105 kJ mol -1 10 4 /T [1/...

Ngày tải lên: 10/08/2014, 11:22

... V=f(I) Metals show Ohmic behavior microscopic origin? © E.A. Fitzgerald-1999 R 3 3.225 1 Electronic Materials Silicon Age: • Communications • Computation • Automation • Defense • ……… Factors: ... (I/A)(V/l) = IV/vol • Total power absorbed: 2 /R = I 2 R How much current does a 100 W bulb draw? I = 100 W/115V = 0.87A © H.L. Tuller-2001 P = IV = V 3.225 14 Predicting...

Ngày tải lên: 10/08/2014, 11:22

... exact answer very difficult: many-bodied problem () h 01 10 22 10 10 2 ; EEf m e e − = − = ω ωω ωα E 1 E 0 f 10 is the oscillator strength of the transition (ψ 1 couples ... Electrical, ε diamond 5.66 5.68 NaCl 2.25 5.9 H 2 O 1.77 80.4 Only electronic polarization Electronic and ionic polarisation Electronic, ionic, and molecular polarisation Polarizat...

Ngày tải lên: 10/08/2014, 11:22

... H.L. Tuller-2001 Temperature Independence: High Acceptor Concentration in SrTiO 3 10 -20 10 -15 10 -10 10 -5 10 0 0,1 1 750°C 800°C 900°C 850°C 950°C electrical conductivity / (Ω cm) ... Requirements • clear dependence on pO 2 • short response times < 100 ms • 700<T< ;100 0°C • long term stability … 3.225 24 Sensor Materials Gas Sensor Electrical Signa...

Ngày tải lên: 10/08/2014, 11:22

... rather than bond distortion. Figure 6: The stress relaxation modulus E rel (t). Here E g = 100 ,E r =10, and τ =1. Creep and relaxation are both manifestations of the same molecular mechanisms, ... convenient to write the stress function as a complex quantity σ ∗ whose real part is in phase with the strain and whose imaginary part is 90 ◦ out of phase with it: σ ∗ = σ  0 cos ωt + iσ ...

Ngày tải lên: 11/08/2014, 02:21

... chains. 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 Z X Y M(50)/C 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 Z X Y M(50)/T 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 Z ... 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 Z X Y (a) t / τ R = 0 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 Z X Y (b) t / τ R = 100 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 Z X Y...

Ngày tải lên: 19/06/2014, 11:20

... Surfaces 17 0 100 0 2000 3000 -30 -20 -10 0 10 20 30 40 100 0 2000 3000 4000 5000 6000 0 100 0 2000 3000 4000 5000 6000 0 100 0 2000 3000 4000 -30 -20 -10 0 10 20 30 40 0 100 0 2000 3000 4000 2000 4000 6000 ... 6000 8000 0 2000 4000 6000 8000 -20 -10 0 time (fs)time (fs) Energy (kcal/mol) Energy (kcal/mol) (a) (b) (c) (d) -20 -10 0 0 100 0 2000 3000 -20 -10 0 -20 -10 0 F...

Ngày tải lên: 19/06/2014, 11:20

... >3.24 3.18 3 .10 3 .10 3.20 3.14 3.18 Young’s modulus, GPa 290 310 310 310 395 410 430 363 377 Vickers hardness, HV 1500 1520 1450 (300g) 1650 (300g) 2500 2800 (100 g Konopp ) ... 2002), pp. 28 6102 -1-4, ISSN 0031-9007 Silicon Carbide – Materials, Processing and Applications in Electronic Devices 310 A favorable combination of properties makes SiC mate...

Ngày tải lên: 19/06/2014, 11:20

... combining the Micro Electronic and Mechanical Systems 338 10 20 30 40 50 10 2 10 3 10 4 10 5 10 6 10 7 10 8 10 9 10 10 10 11 10 12 12345 lifetime for (-20V, 100 o C) V G10Y at 100 o C V GO =-20V E ... (70/30) wt. %. a) b) Micro Electronic and Mechanical Systems 336 0.1 1 10 100 100 0 10 -3 10 -2 10 -1 10 0 300 350 400 450 10 3 10 4 1...

Ngày tải lên: 21/06/2014, 18:20

... frequencies from 30 to 100 0 Hz under the Air Force HCF program at various laboratories are presented in Figure 3.14 for R = 08. Including 800 850 900 950 100 0 10 5 10 6 10 7 10 8 All data ML 420 ... failed below 10 7 and none will reach 10 9 . At “E” there is a higher probability of survival beyond 10 7 but all fail by 10 9 . At some intermediate level “D,” some will fail...

Ngày tải lên: 03/07/2014, 20:20