Electronic Materials Part 7 ppt

... → 3 3.225 7 Compare Optical (index of refraction) and Electrical Measurements of ε Material Optical, n 2 Electrical, ε diamond 5.66 5.68 NaCl 2.25 5.9 H 2 O 1 .77 80.4 Only electronic ... ωα © E. Fitzgerald-1999 7 8 3.225 15 Ionic Polarizability • Problem reduces to one similar to the electronic polarizability • Critical frequency will be less than electronic since ions...

Ngày tải lên: 10/08/2014, 11:22

... Electrical, ε diamond 5.66 5.68 NaCl 2.25 5.9 H 2 O 1 .77 80.4 Only electronic polarization Electronic and ionic polarisation Electronic, ionic, and molecular polarisation Polarization ... 8 3.225 15 Ionic Polarizability • Problem reduces to one similar to the electronic polarizability • Critical frequency will be less than electronic since ions are more massive • The restori...

Ngày tải lên: 11/08/2014, 14:20

... V=f(I) Metals show Ohmic behavior microscopic origin? © E.A. Fitzgerald-1999 R 3 3.225 1 Electronic Materials Silicon Age: • Communications • Computation • Automation • Defense • ……… Factors: ... Siemens/cm-(S/cm) ( ) () ( EmnevnedtAedtAvnj d d τ 2 =−=−= ( EjmneEj ==⇒= τσσ 2 ) ) 6 3.225 17 Resistivity/Conductivity Pessimist vs Optimist L W I V t R = ρ...

Ngày tải lên: 10/08/2014, 11:22

... 0,1 1 75 0°C 800°C 900°C 850°C 950°C electrical conductivity / (Ω cm) -1 pO 2 / bar m = 0,2 Sr(Ti 0,65 Fe 0,35 )O 3 Response times T / °C t 90 / ms 900 6.5 800 26 75 0 83 70 0 [1] ... Stimulus Requirements of Gas Sensor Materials • High sensitivity • High selectivity •Reproducibility • Fast response time • Compatibility with Si microelectronics •Long term stabili...

Ngày tải lên: 10/08/2014, 11:22

... ppm) ZnO(Ar:O 2 =7: 3) 1 [ Pfad: \ alp ha missy Messungen messplat z_1 ] M. Jägle / 27. 02.2001 S1219a S1219b S1219c S1219d resistance / Ohm M 971 074 6 20V Datum: 23.02.2001 - 27. 02.2001 Steuerdatei: ... electrode SiO 2 layer Electrical Measurement 0 20 0 0 0 -10 0 10 20 30 40 50 60 70 80 90 100 110 -10 0 10 20 30 40 50 60 70 80 90 100 110 MFC2 Temp NO2 NH3 Feuchte CO NO2kl H2...

Ngày tải lên: 10/08/2014, 11:22

... Appl. Phys. Vol. 39, (November 2006), pp. 477 7- 478 2, ISSN 1361-6463 Venkatachalam, S. ; Agilan, S. ; Mangalaraj, D. ; Narayandass, Sa.K. (2007a). Optoelectronic properties of ZnSe thin films. ... Hommel, D. (19 97) . Optically detected cyclotron resonance properties of high purity ZnSe epitaxial layers grown on GaAs. Appl. Phys. Lett. Vol. 71 , (August 19 97) , pp. 1116-11 17, ISSN 1...

Ngày tải lên: 19/06/2014, 11:20

... Philos. Mag. A, Vol. 78 , No. 3, 72 7 73 6, ISSN: 1 478 -6435. Saparin, G. V.; Obyden, S.K.; Ivannikov, P. V.; Shishkin, E. B.; Mokhov, E. N.; Roenkov, A. D.; Hofmann, D. H. (19 97) . Three-Dimensional ... 0.01533 0.0 272 8 0.14081 0.58161 C-face (Dry oxidation) 0.05 072 0.11643 0.34992 0.93 078 Si-face (Wet oxidation) 0.01022 0.02916 0.10441 0.88499 C-face (Wet oxidation) 0.048 8...

Ngày tải lên: 19/06/2014, 11:20

... 2 67 Position (cm -1 ) Height Width Amorphous SiC 450. 172 0.1340 102.16 Nanocrystalline β-SiC 463.52 0.09291 34.3 971 424 .75 0. 079 75 58.43 57 Nanocrystalline α+β SiC 472 .69 0.1 274 ... using 246 Silicon Carbide – Materials, Processing and Applications in Electronic Devices Silicon Carbide – Materials, Processing and Applications in Electronic Devices 266 Fi...

Ngày tải lên: 19/06/2014, 11:20

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Ngày tải lên: 10/08/2014, 02:20

... WVGS WVGS 134 07 13421 13423 Hydrogenation Temperature, "C 350 350~~350400450 Yield, wt% (daf) 84 62 a3 82 74 83 67 Yield from raw coal, 66.3 35 7 34 2 wt% (daf) ... hydrogenation EXT HEXT400 HEXT450 c 86 1 84 2 87 0 88 1 H 53 55 w 15 21 S 09 08 0' 63 74 C/H atomic 1. 37 128 ratio 55 24 07 44 132 58 22 08 31 126 &apo...

Ngày tải lên: 10/08/2014, 11:21