Electronic Materials Part 5 pot
Electronic Materials Part 5 pot
... drastically – 1 part in 10 7 impurity in a crystal (~10 22 cm -3 atom density) –10 22 *1/10 7 =10 15 dopant atoms per cm -3 –n~10 15 , p~10 20 /10 15 ~10 5 σ/σ i ~(p+n)/2n i ~n/2n i ~10 5 ! Impurities ... degrade electrical properties Impurities with close electronic structure to host Impurities with very different electronic structure to host isoelectronic hydrog...
Ngày tải lên: 10/08/2014, 11:22
Silicon Carbide Materials Processing and Applications in Electronic Devices Part 5 pot
... scheme. 150 160 170 180 190 200 210 220 230 240 250 0 0.2 0.4 0.6 0.8 fraction of coarse particles thermal conductivity (W/mK) SC GPI - fast GPI - slow 0 2 4 6 8 10 12 0 .50 .55 0.60. 650 .70. 75 particle ... black spots that appear in the four images are foreign particles on the lens. MP 1 c MP 2 d b a -50 0 50 um - 25 0 25um Silicon Carbide – Materials, Processing and...
Ngày tải lên: 19/06/2014, 11:20
Electronic Materials Part 3 potx
... ) ] ) 3.2 25 15 • Compton, Planck, Einstein – light (xrays) can be ‘particle-like’ • DeBroglie – matter can act like it has a ‘wave-nature’ • Schrodinger, Born – Unification of wave-particle ... they appear continuous but are discrete © E. Fitzgerald-1999 L 12 3 3.2 25 5 Effect of Temperature (T>0): Coupled electronic- thermal properties in conductors • Electrons at the Fer...
Ngày tải lên: 10/08/2014, 11:22
Electronic Materials Part 6 potx
... Charge, Electric Field and Potential © E. Fitzgerald-1999 3.2 25 9 Junction Fabrication Processes © H.L. Tuller, 2001 3.2 25 10 CMOS Devices © H.L. Tuller, 2001 5 Transistors FET source ... 2001 7 3.2 25 13 Joining p and n E c E F E v p n Carriers flow under driving force of diffusion until E F is flat - - + + + + Holes diffuse Electrons diffuse © E. Fitzgerald-1999 3.2 25...
Ngày tải lên: 10/08/2014, 11:22
Electronic Materials Part 8 potx
... 3.2 25 9 Colors Produced by Chromium Above: alexandrite, emerald, and ruby. Center: carbonate, chloride, oxide. Below: potassium chromate and ammonium dichromate. © H.L. Tuller, 2001 3.2 25 ... state of a chromium atom (A) and a trivalent chromium ion (B). Chromium Electronic Structure © H.L. Tuller, 2001 5 3.2 25 3 Ferroelectrics • ‘Confused’ atom structure creates metas...
Ngày tải lên: 10/08/2014, 11:22
Electronic Materials Part 11 pot
... material Material Type χ Paramagnetic +10 -5 -10 -4 Diamagnetic -10 -8 -10 -5 Ferromagnetic +10 5 2 1 1 3.2 25 1 © E. Fitzgerald-1999 Magnetic Materials • The inductor ( Law) sFaraday'(explicit ... 100 200 300 400 50 0 600 700 800 1,71 1,72 1,73 1,74 1, 75 1,76 1,77 Contact 1 (f Co1 ) Contact 2 (f Co2 ) Calculation f Co1 + ∆ f( ∆ m Co2 ) T [°C] f A [MHz]...
Ngày tải lên: 10/08/2014, 11:22
Expert Systems for Human Materials and Automation Part 5 pot
... House Inc. 2004, ISBN 1 -58 053 -53 6-4. [24] E. Udd, “An Overview of Fiber-Optic Sensors,” Review of Scientific Instruments, Vol. 66 Issue 8, pp. 40 15- 5030, August 19 95. [ 25] J.F. Tressler, S. Alkoy, ... Journal of Strain Analysis for Engineering Design, Vol. 44, Issue 7, DOI 10.1243/03093247JSA5 35, 55 5 -56 2, 2009. [34] W. Zhang, J. Suhr and N. Koratkar, “Carbon nanotube/polycar...
Ngày tải lên: 19/06/2014, 10:20
Optoelectronics Materials and Techniques Part 5 pot
... study, GaN film grown on a 15- nm-thick buffer grown at 52 5°C has a smooth surface (root mean square, rms=0 .56 nm) and relatively low total threading dislocation density (5. 8×10 9 cm -2 ). Beside ... growth temperatures (from 450 to 840 °C) and thicknesses (from 4 to 30nm) • GaN film grown on a 15- nm- thickbuffer grown at 52 5°C has a smooth surface (rms=0 .56 nm). • Relati...
Ngày tải lên: 19/06/2014, 11:20
Silicon Carbide Materials Processing and Applications in Electronic Devices Part 2 pot
... 1 85] a=b=11.60 75 c =5. 0307 Si 0.4227 0 0.063 6c Si 0.1786 0 .51 2 0 .56 3 12d C 0 .57 73 0 0.937 6c C 0.8214 0.488 0.437 12d ATO R3 [number 148] a=b=12.942 c=3.0284 Si 0.1992 0. 251 0. 250 18f C 0. 051 8 ... Müller, 1999; Wesch, 1996). C [at%] L 350 0 350 0 3000 250 0 2000 150 0 1000 4000 450 0 G 1404 5 C 254 5±40°C ~3200°C B.P. 1414°C M.P. SiC Temperature [°C] 0 10 20 30 40 50 60 7...
Ngày tải lên: 19/06/2014, 11:20
Silicon Carbide Materials Processing and Applications in Electronic Devices Part 9 pot
... Vol. 307, pp. 55 1 -56 0 Kwok, S., Volk, K. M., & Hrivnak, B. J. (1989). A 21 micron emission feature in four proto- planetary nebulae, Astrophys. J. Lett., Vol. 3 45, pp. L51-L54 Ladjal, D., ... Murchison meteorite in the size range 0 .5- 1 .5 μm, Meteorit. Planet. Sci., Vol. 35, No. 6, pp. 1 157 -1176 Silicon Carbide – Materials, Processing and Applications in Electronic Dev...
Ngày tải lên: 19/06/2014, 11:20