Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim Part 10 docx

... (um) 0. 1-1 0 0. 3-1 00 0. 1-0 .5 0. 1-0 .3 Bake temperature (°C) 9 0-1 50 35 0-4 50 50 0-9 00 650 Solvent Weak base Weak base HF HNO 3 Table 2.4 Commercially available resists Resist Kodak 747 AZ-1350J PR 102 Poly(methyl ... 2.2 1.46 1.44 1.46 1.46 > ;10 -5 8 x 10 -6 10 -5 10 -5 CONTENTS ix 8.7 Concluding Remarks 300 References 300 9 Introd...

Ngày tải lên: 27/06/2014, 18:20

... currently worth about 1 US dollar. INTRODUCTION 10 100k ,9 Clock rate (Hz) 1M 10M 1G 10G y 10 - 10& apos ;- •a 10 - jj 10 4 H £ z 10 3 10 2 80386 Pentium IV Pentium I 486 Pentium ID 80286 8086. 4004, 1970 ... soild-state device physics, micro- electronics, material science, MEMS/ Smart structures, and mechanics. Prior to joining About the Authors INTR...

Ngày tải lên: 10/08/2014, 05:20

... 2.2 1.46 1.44 1.46 1.46 > ;10 -5 8 x 10 -6 10 -5 10 -5 38 MEMS MATERIALS AND THEIR PREPARATION (a) 1 s orbital 2s orbital 2p y orbital 2p. orbital (c) m=l m = -2 Figure 3.1 Theoretical ... (um) 0. 1-1 0 0. 3-1 00 0. 1-0 .5 0. 1-0 .3 Bake temperature (°C) 9 0-1 50 35 0-4 50 50 0-9 00 650 Solvent Weak base Weak base HF HNO 3 Table 2.4...

Ngày tải lên: 10/08/2014, 05:20

... (ºC) 1150–1225 102 5-1 100 1100 –1175 95 0-1 050 Dopant type n n P Deposition rate L(um/min) 0. 2-1 .0 0. 1-1 .0 0. 2-2 .0 0. 1-0 .25 N/A N/A N/A A number of different sources of both silicon and the dopant ... Etching 5. Polishing 6. Cleaning 72 STANDARD MICROELECTRONIC TECHNOLOGIES 100 10 1 - 0.1 - 0.01 0.001 TTL ECL GaAs CMOS 1,000 100 10 1 0...

Ngày tải lên: 10/08/2014, 05:20

... attach and wire bond 1 30 0-5 00 2 0-1 00 2. 0-3 .5 4-7 Excellent DC Poor TAB >2 50 0-7 00 3-4 4. 0-5 .0 3-4 Fair AC Poor/Fair Flip TAB >2 50 0-7 00 3-4 4. 0-5 .0 3-4 Fair AC Fair Flip Chip 0.8 100 0 10 <1.0 10 Poor AC Poor basic ... section of an n-channel MOSFET and (b) symbols for n -channel and p-channel depletion-type and...

Ngày tải lên: 10/08/2014, 05:20

... (Au) 15 10 0-1 50 25 0-3 50 25 0-3 50 5 to 10+ 0. 2-0 .3 3.0 90 4.3 HTCC MCM-C Alumina 9.5 10 0-7 50 10 0-2 00 W(Co) 15 10 0-1 25 25 0-6 25 20 0-3 00 50+ 0. 8-1 10. 0 102 2.1 Adapted from Doane and Franzon Thin film MCM-D Polyimide 3.5 25 25 Cu ... conductivity Units % - 1 0- 6 /°C g/cm 3 - 10 –3 kV/mm GPa ft-cm J/g.°K W/m.°K AI 2 O 3 99.5...

Ngày tải lên: 10/08/2014, 05:20

... types of MEMS RADIATION SENSORS 241 Radition sensors Number particles X ray X ray - Plastic film - Thermoluminescent - Solid-state -Photoconductive -Photovoltaic -Photoconductive - Photovoltaic " ... is about 10 10 cm -3 at room temper- ature. In highly doped silicon resistors ( ~10 18 cm -3 ), the temperature-dependence approx- imates re...

Ngày tải lên: 10/08/2014, 05:20

... control 9 9 9 9 n/a 7 9 30 100 3.3 97 455 14 19 0-1 05 5 0-1 05 0-1 05 0-1 05 500 20000 5 0-1 05 Current Current 1989 1994 199 4-1 995 199 4-1 995 Current devices have an accuracy of 0.01 percent root-mean-square (rms) ... density (mg/Hz) Package" Price(€)* Motorola XMMAS4 01G1D 1 ±40 g 20 g -4 0 to 105 5 400 0.5 N/A 7.8 16-pin DIP, SIP 11 Bosch SMB050 1...

Ngày tải lên: 10/08/2014, 05:20

... - CO Hydrocarbons Chlorine Ozone Range (PPM) 50 0-1 0000 5-1 00 < ;10 1 0-1 000 1 0-1 000 0-5 0-0 .3 (Power mW) 835 660 660 120 400 650 800 Cost a (euro) 13 50 13 13 15 25 25 a Price for 1 to 9 units 1 euro is $1.1 here part of ... the conduction band of the tin oxide creating chemisorbed oxygen sites such as O - , O 2 , and so on. + {vacancy} +...

Ngày tải lên: 10/08/2014, 05:20

... operation Device type Love SAW Rayleigh SAW SH-SAW SH-APM FPW Substrate Typical frequency (MHz) ST-quartz ST-quartz LiTaO 3 ST-quartz Si x N y /ZnO 9 5-1 30 8 0-1 000 9 0-1 50 160 1-6 Ua U b t Media Transverse Parallel Ice ... so the expression for the strain-displacement tensor is rewritten as du t (x,t) 2 j(x,t )-] 4 - dxt J t , , , Sij(x, 0 = - — -...

Ngày tải lên: 10/08/2014, 05:20