Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim Part 4 pdf

... FETs 93 4. 3.5 SOI CMOS Processing 97 4. 4 Monolithic Mounting 99 4. 4.1 Die Bonding and Wire Bonding 100 4. 4.2 Tape-Automated Bonding 101 4. 4.3 Flip TAB Bonding 103 4. 4 .4 Flip-Chip ... (um) 0. 1-1 0 0. 3-1 00 0. 1-0 .5 0. 1-0 .3 Bake temperature (°C) 9 0-1 50 35 0 -4 50 50 0-9 00 650 Solvent Weak base Weak base HF HNO 3 Table 2 .4 Commercially ava...

Ngày tải lên: 27/06/2014, 18:20

... Device 40 1 14. 3.2 Integration of the SAW Device and Seismic Mass 40 2 14. 4 Testing of a MEMS- IDT Accelerometer 40 2 14. 4.1 Measurement Setup 40 3 14. 4.2 Calibration Procedure 40 4 14. 4.3 ... 40 5 14. 4 .4 Experimental 40 6 14. 4.5 Fabrication of Seismic Mass 40 8 14. 5 Wireless Readout 41 2 14. 6 Hybrid Accelerometers and Gyroscopes 41 4 14...

Ngày tải lên: 10/08/2014, 05:20

... 10 -5 168 11.7 190 6.9 GaAs 5316 1510 10 -1 1 47 12 - — SiO 2 1 544 1880 - 6. 5-1 1 4. 3 -4 .5 380 14 Si 3 N 4 344 0 1900 - 19 7.5 380 14 Al 2699 660 377 236 - 70 50 Au 19320 10 64 488 319 - 78 200 Ti 45 08 1660 26 22 - -4 0 48 0 "Measured ... (um) 0. 1-1 0 0. 3-1 00 0. 1-0 .5 0. 1-0 .3 Bake temperature (°C) 9 0-1 50 35 0 -4 50 5...

Ngày tải lên: 10/08/2014, 05:20

... orientation 0.5 0-0 .55 3 0-3 5 1 6-2 0 0.6 0-0 .65 4 0 -4 5 2 5-3 0 70 65 0.6 5-0 .70 5 5-6 0 3 5 -4 0 60 50 (100) or (111) (100) or (111) (100) or (111) "Wafer flats are defined in Section 4. 2. from ... structure Zinc-blende structure Zinc-blende structure Zinc-blende structure Zinc-blende structure Zinc-blende structure Zinc-blende structure Zin...

Ngày tải lên: 10/08/2014, 05:20

... test Reworkability Die attach and wire bond 1 30 0-5 00 2 0-1 00 2. 0-3 .5 4- 7 Excellent DC Poor TAB >2 50 0-7 00 3 -4 4. 0-5 .0 3 -4 Fair AC Poor/Fair Flip TAB >2 50 0-7 00 3 -4 4. 0-5 .0 3 -4 Fair AC Fair Flip Chip 0.8 1000 10 <1.0 10 Poor AC Poor basic ... n-p-n transistor: (a) common-emitter; (b) common-base; and (c) common-collector MO...

Ngày tải lên: 10/08/2014, 05:20

... conductivity Units % - 1 0- 6 /°C g/cm 3 - 10 –3 kV/mm GPa ft-cm J/g.°K W/m.°K AI 2 O 3 99.5 White 7.6 3.87 9.9 0.1 24 400 10 14 - 2 0-3 5 AI 2 O 3 96 White 7.1 3.7 9.5 0 .4 26 250 10 14 - 2 0-3 5 BeO 99.5 White 9.0 3.01 6.5 0 .4 9.5 17 0-2 40 10 15 - 25 0-2 60 A1N 9 8-9 9.8 Dark grey 4. 4 3.255 8. 8-8 .9 0. 7-2 .0 1 0-1 4 28 0-3 20 >1...

Ngày tải lên: 10/08/2014, 05:20

... types of MEMS RADIATION SENSORS 241 Radition sensors Number particles X ray X ray - Plastic film - Thermoluminescent - Solid-state -Photoconductive -Photovoltaic -Photoconductive - Photovoltaic " ... process and three ways in a CMOS process to make a p-n diode (see Table 4. 2). The I-V characteristic of a p-n diode is nonlinear (Figure 4. 19)...

Ngày tải lên: 10/08/2014, 05:20

... density (mg/Hz) Package" Price(€)* Motorola XMMAS4 01G1D 1 40 g 20 g -4 0 to 105 5 40 0 0.5 N/A 7.8 16-pin DIP, SIP 11 Bosch SMB050 1 ±35 g - - 7 40 0 0.5 N/A - 28-pin PLCC N/A Bosch SMB060 2 ±35 g - - 12 40 0 0.5 1 - 28-pin PLCC N/A Analog devices ADXL50JH 1 ±50 ... control 9 9 9 9 n/a 7 9 30 100 3.3 97 45 5 14 19 0-1 05 5 0-1 05 0-1 05 0-1 05...

Ngày tải lên: 10/08/2014, 05:20

... SnO 2 Undoped oxide Undoped oxide Measurand Methane Hydrogen sulfide Air quality (smoke) Toxic gas - CO Hydrocarbons Chlorine Ozone Range (PPM) 50 0-1 0000 5-1 00 <10 1 0-1 000 1 0-1 000 0-5 0-0 .3 (Power mW) 835 660 660 120 40 0 650 800 Cost a (euro) 13 50 13 13 15 25 25 a Price ... based thick- film gas sensors," Sensors and Actuators B, 43 , 45 –51...

Ngày tải lên: 10/08/2014, 05:20

... the expression for the strain-displacement tensor is rewritten as du t (x,t) 2 j(x,t )-] 4 - dxt J t , , , Sij(x, 0 = - — - h -4 - (10.5) 10 .4. 2 Stress When a body vibrates ... pp. 52 1-5 23. Grate, J. W., Martin, S. J. and White, R. M. (1993a). "Acoustic wave microsensors, Part I," Analyt- ical Chem., 65, 94 0-9 48 . Gra...

Ngày tải lên: 10/08/2014, 05:20