... Introduction 9 1. 2 UV Photolithography 10 1. 2 .1 UV Exposure Systems 11 1. 2 .1. 1 Mask Aligners 12 1. 2 .1. 2 UV Light Sources 15 1. 2 .1. 3 Optical Systems 15 1. 2 .1. 3 .1 Contact and Proximity Printing 16 1. 2 .1. 3.2 ... Points 12 6 Part II Microsystems 12 7 II .1 Introduction 12 7 II .1. 1 Microsystem Components 12 8 Chapter 5 Microsensors 13 1 5 .1 In...
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... 29 1 12. 3.4 Other ADC Errors 29 2 12. 3.4.1 Missing Codes 29 2 12. 3.4 .2 Full-Scale Error 29 2 12. 3.5 Companding 29 2 12. 4 Analog-to-Digital Converters 29 2 12. 4.1 Sample -and- Hold Circuit 29 3 12. 4 .2 PWM ... 29 3 12. 4 .2. 1 Integrating ADC 29 3 12. 4 .2. 2 Conversion Time 29 4 12. 4.3 Successive Approximation 29 4 12. 4.4 Flash ADC 29 5 12. 4.5 Sigma-Delta...
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Microengineering MEMs and Interfacing - Danny Banks Part 3 pptx
... treatment. 3. Masks are normally produced by direct-write e-beam systems. Masks are normally chrome on quartz or low-expansion glass. 4. X-ray lithography can achieve high resolution and high-aspect-ratio structures, ... configuration. DK3182_C002.fm Page 37 Friday, January 13, 2006 10:58 AM Copyright â 2006 Taylor & Francis Group, LLC 20 Microengineering, MEMS, and Interfaci...
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Microengineering MEMs and Interfacing - Danny Banks Part 4 pot
... for wafers composed enpotic materials. At the time of writing, 12-in. wafers are only available in the most advanced IC fabs, and most MEMS work is performed on 4- and 6-in. wafers. Wafer suppliers ... DK3182_C002.fm Page 47 Friday, January 13, 2006 10:58 AM Copyright â 2006 Taylor & Francis Group, LLC 44 Microengineering, MEMS, and Interfacing: A Practical Guide whic...
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Microengineering MEMs and Interfacing - Danny Banks Part 5 pot
... for use in MEMS (and elec- tronic) devices, porous silicon has a vast surface-to-volume ratio, and conse- quently it is etched much more rapidly than normal silicon. By selectively anod- izing different ... Microengineering, MEMS, and Interfacing: A Practical Guide The silicon diaphragm is the basic structure used to construct pressure sensors and some accelerometers. Silicon diap...
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Microengineering MEMs and Interfacing - Danny Banks Part 6 pdf
... www .microchem.com.) (a) (b) (c) (d) SU-8 Resist DK3182_C003.fm Page 81 Monday, January 16, 20 06 12:44 PM Copyright â 20 06 Taylor & Francis Group, LLC 86 Microengineering, MEMS, and Interfacing: A Practical ... Monday, January 16, 20 06 12:44 PM Copyright â 20 06 Taylor & Francis Group, LLC 92 Microengineering, MEMS, and Interfacing: A Practical Guide ã Energy...
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Microengineering MEMs and Interfacing - Danny Banks Part 7 ppt
... fabrication. In this case, a 4-in. (100-mm)-diameter wafer will be used. The structure wafer is created and, to simplify the layout, an annulus (ring) of 100-mm outside diameter and 90-mm inside diameter ... 108 Microengineering, MEMS, and Interfacing: A Practical Guide A 4- à m minimum feature size has been chosen. The test structure consists of a set of 4- à m bars,...
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Microengineering MEMs and Interfacing - Danny Banks Part 8 pot
... on low-expansion glass or quartz. Mask plates should, clearly, be larger than the wafer being processed: a 2-in. (50-mm)-diameter wafer would require 2.5-in. (63.5-mm) square blank, and a 4-in. ... silicon Oxide Metal Source Drain Gate Substrate connection DK3 182 _C005.fm Page 1 38 Friday, January 13, 2006 10:59 AM Copyright â 2006 Taylor & Francis Group, LLC 120 Microengineering,...
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Microengineering MEMs and Interfacing - Danny Banks Part 9 pot
... view Side view DK3182_C006.fm Page 1 49 Friday, January 13, 2006 10: 59 AM Copyright â 2006 Taylor & Francis Group, LLC 154 Microengineering, MEMS, and Interfacing: A Practical Guide One ... most common and well-developed method, but it does suffer a little from wear and sticking problems. Magnetic actuators usually require rela- tively high currents (and high power) a...
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Microengineering MEMs and Interfacing - Danny Banks Part 10 ppt
... CH 4 Methane H | H-C-H | H C 2 H 6 Ethane H H | | H-C-C-H | | H H C 3 H 8 Propane H H H | | | H-C-C-C-H | | | H H H C 4 H 10 Butane H H H H | | | | H-C-C-C-C-H | | | | H H H H C 5 H 12 Pentane ... H H H H C 5 H 12 Pentane H H H H H | | | | | H-C-C-C-C-C-H | | | | | H H H H H C 6 H 14 Hexane H H H H H H | | | | | | H-C-C-C-C-C-C-H | | | | | | H H H H H H DK3182_C007....
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Microengineering MEMs and Interfacing - Danny Banks Part 11 ppt
... towards the cathode, dragging the rest of the fluid in the channel with them. - - - - - - - - - - - - - - - - ⊕⊕⊕⊕⊕⊕⊕⊕⊕⊕ ⊕⊕⊕⊕⊕⊕⊕⊕⊕⊕ Cathode (−V) Anode (+V) Positive ions in solution Surface ... January 19, 2006 11: 17 AM Copyright © 2006 Taylor & Francis Group, LLC 194 Microengineering, MEMS, and Interfacing: A Practical Guide elect...
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Microengineering MEMs and Interfacing - Danny Banks Part 12 potx
... Francis Group, LLC 214 Microengineering, MEMS, and Interfacing: A Practical Guide With plastic packages, a similar attach-to-base/bond-wires/seal-with-lid pro- cess may be used. After wire ... Obviously, if microsystems consisting of many microscopic parts have to be assem- bled by hand, this can be a costly and time-consuming process. Hand assembly may be acceptable for device d...
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Microengineering MEMs and Interfacing - Danny Banks Part 13 docx
... Microengineering, MEMS, and Interfacing: A Practical Guide “Computer Interfacing, ” but focuses mainly on analog-to-digital and digital-to- analog conversion. Many of the approaches employed in digital interfacing ... and attach it to the probe tip, and reversing DK3182_C010.fm Page 233 Friday, January 13, 2006 11:01 AM Copyright â 2006 Taylor & Francis Group, LLC 226...
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Microengineering MEMs and Interfacing - Danny Banks Part 16 pptx
... pairs, will be considered in this section, the npn and pnp bipolar junction transistor (BJT) and the n- and p-channel enhancement-mode metal-oxide-semiconductor field effect transistor (MOSFET). ... January 16, 2006 12:45 PM Copyright â 2006 Taylor & Francis Group, LLC 284 Microengineering, MEMS, and Interfacing: A Practical Guide the signal is high is referred to as the...
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Microengineering MEMs and Interfacing - Danny Banks Part 17 ppt
... processes employ both n-channel and p-channel MOSFETs, and so will be referred to as either n-well or p-well processes. In the n-well process, a p-type wafer is specified and deep n-type diffusions ... section. Figure 13.9 shows the structure and symbols for n-channel (Figure 13.9a and Figure 13.9b) and p-channel (Figure 13.9c and Figure 13.9d) enhancement-mode MOSFETs. Note the...
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