Engineering Materials and Processes phần 10 pptx

... (e.g. grain size and texture); (2) contamination control (C, O and CI); (3) oxidation and corrosion control; (4) prevention of Ag diffusion in metals and dielectric materials; and (5) mechanical ... electromigration [17] Ho and Huntington [11], Patil and Huntington [12] reported that Ag migrates toward the anode for the temperature range 670–877°C. Klotsman et al. [13] an...

Ngày tải lên: 08/08/2014, 17:20

... 1994. [3] J. Li, J. W. Mayer, Y. Shacham-Diamand, E. G. Colgan, Appl. Phys. Lett. 60. 2983(1992). [4] D. Adams, and T. L. Alford, Materials Science and Engineering: Reports 40, 207(2003). [5] ... distributions of Ag and Ti of a 210 nm-thick Ag(19 at.% Ti) alloy, before and after annealing at 450°C and 600°C for 30 minutes in NH 3 . A 2.0 MeV He +2 beam energy was used [9...

Ngày tải lên: 08/08/2014, 17:20

... temperatures. Pure Ag and Ag(Al) thin films were deposited on thermally grown SiO 2 using electron-beam evaporation. Typical base pressure and operation pressure were 5 10 –7 and 4 10 –6 Torr, respectively. ... resistivity of materials depends on their purity and microstructure. Impurities and structural imperfections such as grain boundaries, dislocations and vacancies...

Ngày tải lên: 08/08/2014, 17:20

... dielectric constant, the materials must have a good adhesion to silicon and to interconnect materials and thermal stability. Thermal stability is important to device characteristics and reliability. ... than 400°C confirms the outdiffusion of Al to the surface and the subsequent formation of a thin aluminum oxide (Figures 6 .10( b) and 6 .10( c)). Within the detection limit...

Ngày tải lên: 08/08/2014, 17:20

... reliability. Engineering Materials and Processes Dedicated to our ever patient, supportive and loving wives, Madeline, Katherine and Betty 1 Introduction ... and technologists in the field of integrated circuits and microelectronics research and development. The content of the monograph is an indirect result of extensive and...

Ngày tải lên: 08/08/2014, 17:20

... to about 1x10 10 Torr. During annealing the vacuum in the furnace was about 1 x10 –8 Torr. Sheet resistances of the TaN/Si and Ag/TaN/Si structures were measured, both before and after annealing, ... promoter and an effective diffusion barrier between interconnect metal and adjacent materials. 3.4.2 Experimental Details Tantalum nitride films with nominal thicknesses of abou...

Ngày tải lên: 08/08/2014, 17:20

... 0 0.0 5.0x10 3 1.0x10 4 1.5x10 4 2.0x10 4 Si Ag Al O P - P Height Sputter Time (min) P-P Hei g ht ( Arb. Units ) 30 25 20 15 10 5 0 0.0 5.0x10 3 1.0x10 4 1.5x10 4 2.0x10 4 Si Ag Al O O P - P Height Sputter ... 4 .10. Auger depth profiles of a Ag (200 nm)/Al (8 nm) bilayer on SiO 2 (a) as- deposited, (b) 400°C, (c) 700°C for 30 minutes, annealed in Ar [16] 25 20 15 10 5 0 0.0 5.0x10 3...

Ngày tải lên: 08/08/2014, 17:20

... samples were tested for both test configurations (samples A, B, C, and D for bare Ag patterns, and samples A′, B′, C′, and D′ for and NH 3 - annealed Ag patterns). The average of four failure times ... alloys and bilayers on silicon dioxide substrates during self-encapsulation in an NH 3 ambient. Adams et al. [1] and Zou et al. [2] studied the dealloying kinetics of Ag (Ti), C...

Ngày tải lên: 08/08/2014, 17:20

... of the bonding between the two materials, Au and silicon. On the other hand, the type of ambient gas, alters the surface properties of the metal upon absorption and results in an increase or ... is the temperature and k b is Boltman’s constant. R is a constant, which accounts for the chemical effects between the trapped Al and Ag; depends on the diffusion process and was chose...

Ngày tải lên: 08/08/2014, 17:20

... 6.3.2.1 CoSi 2 and Ti-O-N Preparation Test grade silicon (100 ) p-type wafers, 10 to 20 Ω resistance, were cleaned in a piranha bath containing sulfuric acid and hydrogen peroxide at 100 o C. The ... reviews bilayer and alloy techniques with Ti, Al and others to form adhesion layers and diffusion barriers. The temperature range of thermal stability is covered. During Ti a...

Ngày tải lên: 08/08/2014, 17:20