Engineering Materials and Processes phần 9 ppsx
Engineering Materials and Processes phần 9 ppsx
... Appl. Phys. Lett. 68, 3251( 199 6). [4] Y. Wang, T. L. Alford, Appl. Phys. Lett. 74, 52( 199 9). [5] Y. Wang, T. L. Alford, J. W. Mayer, J. Appl. Phys. 86, 5407( 199 9). [6] D. Adams, B. A. Julies, ... S. Lau, F. Deng, T. Laursen and B. M. Ullrich, J. Appl. Phys. 81, 7773( 199 7). [ 19] B. A. Julies, D. Knoesen, R. Pretorius, D. Adams, Thin Solid Films 347, 201( 199 9). [20] M. M....
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Engineering Materials and Processes phần 7 ppsx
... samples were tested for both test configurations (samples A, B, C, and D for bare Ag patterns, and samples A′, B′, C′, and D′ for and NH 3 - annealed Ag patterns). The average of four failure times ... Manfred Ullrich, Appl. Phys. Lett. 68, 3251( 199 6). [2] Y. L. Zou, T.L. Alford, Y. X. Zeng, A. Amali, T. Laursen, B. M. Ullrich, J. Appl. Phys. 82, 3321( 199 7). [3] J. Li, G. Viz...
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Engineering Materials and Processes phần 1 doc
... reliability. Engineering Materials and Processes Dedicated to our ever patient, supportive and loving wives, Madeline, Katherine and Betty 1 Introduction ... and technologists in the field of integrated circuits and microelectronics research and development. The content of the monograph is an indirect result of extensive and...
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Engineering Materials and Processes phần 2 pptx
... Association, San Jose, CA, 199 4. [3] J. Li, J. W. Mayer, Y. Shacham-Diamand, E. G. Colgan, Appl. Phys. Lett. 60. 298 3( 199 2). [4] D. Adams, and T. L. Alford, Materials Science and Engineering: Reports ... Soc. 133 1243( 198 6). [8] T. E. Graedel, J. Electrochem. Soc. 1 39( 7), 196 3( 199 2). [9] B. Chalmers, R. King, R. Shuttleworth, Proc. R. Soc. A 193 , 465( 194 8). [10] A...
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Engineering Materials and Processes phần 3 docx
... electronic grade (99 .99 %, with H 2 O<33 and O 2 +Ar <10 molar ppm) ammonia (NH 3 ) ambient. After loading the samples in the furnace, the tube was sequentially pumped and purged (with ... oxygen content and composition of the TaN films. The 3.0 MeV and 3.7 MeV beam energies correspond to oxygen (O) and nitrogen (N) resonances, respectively, and were used to detect O a...
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Engineering Materials and Processes phần 4 pptx
... 3251( 199 6). [9] D. Adams, T. Laursen, T. L. Alford, and J. W. Mayer. Thin Solid Films 308–3 09, 448( 199 7). [10] N. Marecal, E. Quesnel, and Y. Pauleau, J. Electrochem. Soc., 141 (6), 1 693 ( 199 4). ... Nishiyama and H. Iwai, Extended Abstracts Conf. On Solid State Devices and Materials, Makuhari, 199 3. [12] D. Adams, B. A. Julies, J. W. Mayer and T. L. Alford. Thin Soli...
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Engineering Materials and Processes phần 5 pptx
... helium–hydrogen (He–H), and electronic grade (99 .99 %, with H 2 O<33 and O 2 +Ar<10 molar ppm) ammonia (NH 3 ). Prior to annealing the samples, the furnace was pumped down and purged at least ... dielectric constant, the materials must have a good adhesion to silicon and to interconnect materials and thermal stability. Thermal stability is important to device characte...
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Engineering Materials and Processes phần 6 doc
... Moghadam, and T. L. Alford, Thin Solid Films 262, 154( 199 5). [10] 199 8 Annual Book of ASTM Standards, edited by R. A. Storer (ASTM, Philadelphia), Vol. 6.01, 356( 199 8). [11] G. R. Moore, and D. ... Properties and Processing of Polymers for Engineers (Prentice-Hall), New York, 9( 198 4). [12] Y. Wang, T. L. Alford, and J. W. Mayer, J. Appl. Phys. 86, 5407( 199 9). [13] K. N...
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Engineering Materials and Processes phần 8 pdf
... of the bonding between the two materials, Au and silicon. On the other hand, the type of ambient gas, alters the surface properties of the metal upon absorption and results in an increase or ... between Al and Ag, the formation of a solid solution, intermetallic compound formation, a competition between the trapping of Al by the Ag and the diffusion of Al to the reaction surface...
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Engineering Materials and Processes phần 10 pptx
... Mayer, Thin Solid Films 262, 199 ( 199 5). [8] Y. Wang, T. L. Alford, Appl. Phys. Lett. 74(1), 32( 199 9). [9] D. Adams, Ph.D. dissertation, Arizona State University, 199 6. [10] M. Mahadevan, R. M. ... Outdiffusion of Al, 60, 62, 67 Oxide surface layer, 84, 89, 93 , 95 Parylene, 48, 49 Pa-n, 48, 49 dielectric, 48, 49 reliability issues, 5 49 phase change, 50 Polyimides, 2...
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