Engineering Materials and Processes phần 8 pdf
Engineering Materials and Processes phần 8 pdf
... than 15 minutes [8] Diffusion coefficient D (10 –21 m 2 /s) of Al oxide Temperature (°C) Ag(200 nm)/Al(20 nm) Ag(200 nm)/Al(30 nm) 400 0.25 0 .80 500 5. 78 1.59 600 6. 18 3.06 Figure ... factors such as Al thickness and trapping of Al in the silver on the transport kinetics and subsequent formation of the surface oxide. The curves in Figure 6.8a and b show the transpo...
Ngày tải lên: 08/08/2014, 17:20
Engineering Materials and Processes phần 1 doc
... reliability. Engineering Materials and Processes Dedicated to our ever patient, supportive and loving wives, Madeline, Katherine and Betty 1 Introduction ... and technologists in the field of integrated circuits and microelectronics research and development. The content of the monograph is an indirect result of extensive and...
Ngày tải lên: 08/08/2014, 17:20
Engineering Materials and Processes phần 2 pptx
... (FWHM). For example, Ag has a mass M 2 = 1 08 and In has a mass M 2 = 115. The difference between K Ag = 0 .86 2 and K In = 0 .87 0 is 0.0 08. For 2 .8 MeV helium ions, the difference in backscattering ... Brijs, J. Goemans, and W. Vandervost, Nucl. Instr. Meth. B 66, 1 283 18( 1992). [6] S. W. Russell, T. E. Levine, A. E. Bair, and T. L. Alford, Nucl. Instr. Meth. B 1 18,...
Ngày tải lên: 08/08/2014, 17:20
Engineering Materials and Processes phần 3 docx
... oxygen content and composition of the TaN films. The 3.0 MeV and 3.7 MeV beam energies correspond to oxygen (O) and nitrogen (N) resonances, respectively, and were used to detect O and N. The 3.0 ... Diffusion Barriers and Self-encapsulation 31 XRD and RBS analysis using the same parameters and conditions as for the TaN/Si were also carried out on the Ag/TaN/Si structures...
Ngày tải lên: 08/08/2014, 17:20
Engineering Materials and Processes phần 4 pptx
... Diffraction Standard (JCPDS ICDD cards #: 25-1 280 , 26-0 985 , 32-1 282 , 25-12 78, 14-0471, 31-1370, & 32-1 283 ), PDF Database, 1994. [ 18] G. S. Chen, and T. S. Chen, J. Appl. Phys. 87 , 84 73(2000). ... Kaloyeros and W. A. Lanford, Thin Solid Films, 236, 257(1993). [7] H. Miyazaki, K. Hinode, Y. Homma and K. Mukai, Jpn. J. Appl. Phys., 48, 329(1 987 ). [8] T. L. Al...
Ngày tải lên: 08/08/2014, 17:20
Engineering Materials and Processes phần 5 pptx
... dielectric constant, the materials must have a good adhesion to silicon and to interconnect materials and thermal stability. Thermal stability is important to device characteristics and reliability. ... 2.73 2.55 1.95 1 .87 3. 48 60 Silver Metallization about 13 nm thick for the sample annealed at 700°C and that the thickness of the Ag layer is ~ 180 nm thick....
Ngày tải lên: 08/08/2014, 17:20
Engineering Materials and Processes phần 6 doc
... K. S. Gadre and T. L. Alford, J. Vac. Sci. Technol. B 18, 281 4(2000). [3] H. C. Kim, T. L. Alford, and D. R. Allee, Appl. Phys. Lett. 81 , 4 287 (2002). [4] T. L. Alford, Lingui Chen, and K. S. ... Alford, J. Vac. Sci. Technol. B 18( 6), 281 4(2000). [8] L. C. Feldman and J. W. Mayer, Fundamentals of Surface and Thin Film Analysis (North-Holland), New York, 307(1 986 ). [9]...
Ngày tải lên: 08/08/2014, 17:20
Engineering Materials and Processes phần 7 ppsx
... 600°C in an NH 3 ambient for 120 minutes. Only the surface peaks and positions are shown [8] . 30 40 50 60 70 80 90 0 2 4 6 8 10 12 14 16 400 o C 500 o C 600 o C Ag(200nm)/Al(20nm) on SiO 2 Thickness ... Ag(200 nm)/Al (8 nm) bilayers on SiO 2 before and after annealing at two different temperatures in NH 3 ambient for 30 minutes. Only the Al surface peaks are shown in (b) [8...
Ngày tải lên: 08/08/2014, 17:20
Engineering Materials and Processes phần 9 ppsx
... of Ag and Ti before and after annealing at 500°C in an ammonia ambient for 30 minutes. The spectra were obtained using a 2.0 MeV He +2 beam and a scattering angle of 170° [4]. Wang and Alford ... Mayer, Thin Solid Films, 3 08/ 309, 4 48( 1997). [2] Y. L. Zou, T. L. Alford, J. W. Mayer, F. Deng, S. S. Lau, T. Laursen, A. I. Amli, B. M. Ullrich, J. Appl. Phys. 82 , 3321(1997)....
Ngày tải lên: 08/08/2014, 17:20
Engineering Materials and Processes phần 10 pptx
... heating, 78, 80 Kinematic factor, 8 Kinetics in Ag/Al bilayer systems, 83 , 97 reaction kinetics, 83 outdiffusion of Al through Ag, 83 Kinetics of oxide, 89 , 93 growth kinetics, 89 Law ... Electromigration, 1, 5, 75, 76, 78 81 Electronegativity, 102 Encapsulation, 80 , 81 , 83 Energy resolution, 8 Failure mechanisms, 109 TiN(O)-encapsulated Ag lines, 80...
Ngày tải lên: 08/08/2014, 17:20