ENCYCLOPEDIA OF MATERIALS CHARACTERIZATIONC phần 7 ppt

... consisting of 240 nm of Si on 170 nm of Si02 on a Si sub-ate. The spectrum in (a) was acquired using a scattering angle of leOo while the spectrum in (b) used a detector angle of llOo. ... ERS and RBS Data The use of RBS concurrently with ERS is necessary for the complete derivation of a hydrogen profile, and it offers some simplifications of analysis....

Ngày tải lên: 08/08/2014, 17:20

... Ritchie. J Polym. Sri. Polym. Chem. 13,8 57, 1 975 . One of many papers from Clark's group of this era which deal with all aspects of XPS of polymers. 8 See the article on surface ... valence-band density of states, and thus the shape of the LW “peak” is derived from a self convolution of the valence- band density of states, and the width of the LW peak i...

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... X-Ray Emission, PIXE 3 57 VISIBLE/W EMISSION, REFLECTION, AND ABSORPTION 7. 0 Introduction 371 7. 1 Photoluminescence, PL 373 7. 2 Modulation Spectroscopy 385 7. 3 Variable Angle Spectroscopic ... quantitative analysis of major, minor, and trace constituents of materials Instrument cost $300,000-$800,000 Size 3 mx 1.5 mx 2 m high 15 ENCYCLOPEDIA OF M...

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... composite materials. Profilometry of softer materials, such as polymers, is also possible with SFM, and with STM if the sample is conducting. Low forces on the SFM tip allow imaging of materials ... prescribed degree. This large depth of focus contributes to the ease of observation of topographical 2.2 SEM 77 Incident Electron Beam Pre-Field of the Ojbective Len...

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... distribution of generation of Cu KOr X rays for an incident beam energy of 20 keV, and the effect of absorption. tion volume of a beam incident perpendicularly on a flat specimen of copper, ... Utlaut'). Some annular dark-field 3.4 STEM 1 67 Si02 Ge Si Figure 5 Images of a thin region of an epitaxial film of Ge on Si grown by oxidation of Ge-implan...

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... Measure- ment of the intensiey and the shape of the profile gives a quantitative analysis of phase boundaries and the influence of finite sizes on the tran~ition.~ Dynamics of phase transitions, ... extracted. Thermal properties of overlayer atoms. Measurement of the intensity of any dif- fracted beam with temperature and its angular profile can be interpreted in terms...

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... Queisser. Appl. Pbys. 10, 275 , 1 976 . Describes PL measurements of a variety of semiconductor properties. 8 K Mettler. Appl. Pbys. 12 ,75 1 977 . PL measurements of surhce state densities ... surface region of thickness t4). One of the films tl or t3 may consist of microscopic (less than 100 nm size) mixtures of two materials, such as SiO, and Si3N4....

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... time) of a silicon sample containing a boron ion implant. elements as a function of time, a profile of the in-depth distribution of the elements is obtained. The depth scale of the profile ... of the sputtering time. By monitoring the secondary ion count rates of selected 10.1 Dynamic SIMS 5 37 lime - of - Right OF) Mass Analyser Figure 1 Schematic re...

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... ICP-OES 643 72 f 8 os 0 6 10 76 20 26 SO MnMt &ow &ti cor7 bmd 72 8 os 0 5 70 75 20 26 50 Jiei#t above &ti o0.9 fi Figure 4 Effect of matrix on ... 0.698 0.202 20.5 61.3 4 .7 1.5 4.1 1 .7 0.6 1.9 1.3 1 .7 Al Fe Ni cu Sn Sb TI Pb 0.00056 0.00025 0. 072 0.0069 0.0019 0.0021 0.044 0.066 33. 25. 3 .7 9.6 23....

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... grating equation. The intensity of the light in the different orders is a very sensitive function of the shape of the lines of the pattern. If the shape of the lines of the pattern is influenced ... its of simple optical hardware. 12.3 MOKE 72 3 The MOKE technique has a broad range of applications from the analysis of ultrathin films (less than about 2 n...

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