ENCYCLOPEDIA OF MATERIALS CHARACTERIZATIONC phần 6 potx

... surface region of thickness t4). One of the films tl or t3 may consist of microscopic (less than 100 nm size) mixtures of two materials, such as SiO, and Si3N4. The volume ratios of these ... Eng. 11 86, 110, 1989. Mater. 18,379, 1989. 7.2 Modulation Spectroscopy 399 A .a73 - B .15- a : .m- C .018 - rn I I I I I I I I I 16w 1 466 1935 1199 1...

Ngày tải lên: 08/08/2014, 17:20

... distribution of generation of Cu KOr X rays for an incident beam energy of 20 keV, and the effect of absorption. tion volume of a beam incident perpendicularly on a flat specimen of copper, ... Utlaut'). Some annular dark-field 3.4 STEM 167 Si02 Ge Si Figure 5 Images of a thin region of an epitaxial film of Ge on Si grown by oxidation of Ge-implant...

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... quantitative analysis of major, minor, and trace constituents of materials Instrument cost $300,000-$800,000 Size 3 mx 1.5 mx 2 m high 15 ENCYCLOPEDIA OF MATERIALS CHARACTERIZATION ... 1'1.0 Introduction 64 5 1 1 .I Neutron Diffraction 64 8 11.2 Neutron Reflectivity 66 0 11.3 Neutron Activation Analysis, NAA 67 1 11.4 Nuclear Reaction Analysis, NRA...

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... composite materials. Profilometry of softer materials, such as polymers, is also possible with SFM, and with STM if the sample is conducting. Low forces on the SFM tip allow imaging of materials ... Society of Metals, Metals Park, 1972. 2 0. Oelsner. Atlas of the Most Important Ore Mineral Parageneses Under the Microscope. Pergamon, London, 1 961 (English editio...

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... Measure- ment of the intensiey and the shape of the profile gives a quantitative analysis of phase boundaries and the influence of finite sizes on the tran~ition.~ Dynamics of phase transitions, ... extracted. Thermal properties of overlayer atoms. Measurement of the intensity of any dif- fracted beam with temperature and its angular profile can be interpreted in terms...

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... valence-band density of states, and thus the shape of the LW “peak” is derived from a self convolution of the valence- band density of states, and the width of the LW peak is twice the width of the valence ... specific parts of the density of states. A fuller description of this type of work' is beyond the scope of this article and is not partic- ularl...

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... ERS and RBS Data The use of RBS concurrently with ERS is necessary for the complete derivation of a hydrogen profile, and it offers some simplifications of analysis. For example, for ... consisting of 240 nm of Si on 170 nm of Si02 on a Si sub-ate. The spectrum in (a) was acquired using a scattering angle of leOo while the spectrum in (b) used a detector a...

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... time) of a silicon sample containing a boron ion implant. elements as a function of time, a profile of the in-depth distribution of the elements is obtained. The depth scale of the profile ... 0.035 V 0 .6 0.27 Cr 26 19.5 Mn 0 .6 0.73 Fe 9 8.2 co 2 1 .6 Ni 37 55 cu 0.07 0.19 Mo 25 11.2 w 0.9 1. 46 Table 1 Semiquantitative bulk analysis by...

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... (99.95%) 6N (99.9999%) Fe Ni cu Cd Sn TI Pb Bi 0.038 0. 366 0 .68 3 0.453 0 .69 8 0.202 20.5 61 .3 4.7 1.5 4.1 1.7 0 .6 1.9 1.3 1.7 Al Fe Ni cu Sn Sb TI Pb 0.000 56 0.00025 ... 0.000 56 0.00025 0.072 0.0 069 0.0019 0.0021 0.044 0. 066 33. 25. 3.7 9 .6 23. 14. 5.4 3.4 Table 2 Precision of trace elemental analysis of 3N5 199.95%)...

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... pm, but some of the largest changes in height exceed 3 pm. The average roughness is 0 .66 pm. 12.1 Surface Roughness 69 9 a b C Figure 6 SEM micrographs of the bottoms of SIMS craters ... grating equation. The intensity of the light in the different orders is a very sensitive function of the shape of the lines of the pattern. If the shape of the lines of...

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