ENCYCLOPEDIA OF MATERIALS CHARACTERIZATIONC phần 4 pdf

... errors will often be much greater than the random errors. An example of data analysis by curve fitting is depicted in Figure 4 fix the system of 44 monolayer of C1 on Ag ... some cases. Systematic errors often make the accu- 4. 3 SEXAFS/NEXAFS 227 24 10 12 6 n A Vo x -8 34 - 12 -18 - 24 5 6 7 8 9 10 11 12 13 14 15 16 17 18 k i...

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... quantitative analysis of major, minor, and trace constituents of materials Instrument cost $300,000-$800,000 Size 3 mx 1.5 mx 2 m high 15 ENCYCLOPEDIA OF MATERIALS CHARACTERIZATION ... Difiction, XPD and AED 227 4. 4 X-Ray Photoelectron and 4. 5 Low-Energy Electron Diffraction, LEED 252 4. 6 Reflection High-Energy Electron Diffraction, WEED 2 64 240 ELECTRO...

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... time) of a silicon sample containing a boron ion implant. elements as a function of time, a profile of the in-depth distribution of the elements is obtained. The depth scale of the profile ... Figure 3 Depth profiles of F implanted into 2000 A Si on SiOz: (a) SAL1 profile with Ar+ sputtering and 24& amp;nm photoionization; and (b) positive SIMS profile w...

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... 9.6 23. 14. 5 .4 3 .4 Table 2 Precision of trace elemental analysis of 3N5 199.95%) and 6N 199.9999%) pure In metals by GDMS (VG 9000). The data are the average of five measurements. ... 0.366 0.683 0 .45 3 0.698 0.202 20.5 61.3 4. 7 1.5 4. 1 1.7 0.6 1.9 1.3 1.7 Al Fe Ni cu Sn Sb TI Pb 0.00056 0.00025 0.072 0.0069 0.0019 0.0021 0. 044 0...

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... (Courtesy of P. M. Kahora, AT&T Bell Laboratories). SEM micrographs of the same sample. Figure 4b shows an area similar to that of Figure 4a, but at a higher magnification. Figure 4c is ... grating equation. The intensity of the light in the different orders is a very sensitive function of the shape of the lines of the pattern. If the shape of the lines of the...

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... composite materials. Profilometry of softer materials, such as polymers, is also possible with SFM, and with STM if the sample is conducting. Low forces on the SFM tip allow imaging of materials ... of the elec- tron, and often this is accompanied by a loss of energy. The angular deflection upon scattering effectively diminishes the localization of the spatial information...

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... Figure 4 (see Isaacson, Ohtsuki, and Utlaut'). Some annular dark-field 3 .4 STEM 167 Si02 Ge Si Figure 5 Images of a thin region of an epitaxial film of Ge on Si grown by oxidation of ... 1 64 ELECTRON BEAM INSTRUMENTS Chapter 3 4 a = 818 nm b X=824nm c X=832nm - 100 pm Figure 4 Monochromatic CL images of the GaAs /Si sample recorded at 818...

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... S 2P 1 64 S 3d 9 He 1,He 11,s 3d 18 He 1,He 11,s 3d 29 He 11, S 3d 41 S 4f 25 He 11, S 4f 34 S 4f 60 S 4f 70 S 4f 84 S 4f 99 S 5d 7 He I, He 11,s 4f 138 S ... valence-band density of states, and thus the shape of the LW “peak” is derived from a self convolution of the valence- band density of states, and the width of the LW peak is twice...

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... surface region of thickness t4). One of the films tl or t3 may consist of microscopic (less than 100 nm size) mixtures of two materials, such as SiO, and Si3N4. The volume ratios of these ... angle of the electric field vector along the major axis of the ellipse (recall the angle a in Figure 2b) relative to a plane of reference 7.3 VASE 40 3 mfi 1 340 129...

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... free of 49 0 ION SCATERING TECHNIQUES Chapter 9 where do/dn (El, 4) is the differential cross section for the nudear scattering pro- cess "H(4He,xH)4He; Qis the total number of 4He ... 0 30 Figure 4 RBS spectra from a sample consisting of 240 nm of Si on 170 nm of Si02 on a Si sub-ate. The spectrum in (a) was acquired using a scattering angle of le...

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