ENCYCLOPEDIA OF MATERIALS CHARACTERIZATIONC phần 3 potx

... (mlcrometerc) Figure 3 Depth distribution of generation of Cu KOr X rays for an incident beam energy of 20 keV, and the effect of absorption. tion volume of a beam incident perpendicularly ... Rea B39, 133 67,1989. 12 D. B. Holt. In: Am& of Organic and Biological Sufaces. (I? Echlin, ed.) Wiley, New York, 1984, p .30 1. 160 ELECTRON BEAM INSTRUM...

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... surface region of thickness t4). One of the films tl or t3 may consist of microscopic (less than 100 nm size) mixtures of two materials, such as SiO, and Si3N4. The volume ratios of these ... constants of solids. sometry, in considerable depth. Alterovitz. J ofAppl. Pbys. 60 ,32 93, 1986. First use of computer drawn three-dimensional surfaces (in wavelength an...

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... quantitative analysis of major, minor, and trace constituents of materials Instrument cost $30 0,000-$800,000 Size 3 mx 1.5 mx 2 m high 15 ENCYCLOPEDIA OF MATERIALS CHARACTERIZATION ... Spectroscopy, UPS 30 0 5 .3 Auger Electron Spectroscopy, AES 31 0 5.4 Reflected Electron Energy-loss Spectroscopy, REELS 32 4 X-RAY EMISION TECHNIQUES 6.0 Introduction 33...

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... composite materials. Profilometry of softer materials, such as polymers, is also possible with SFM, and with STM if the sample is conducting. Low forces on the SFM tip allow imaging of materials ... A of the sample's surface, repulsive van der Waals forces 2 .3 STM and SFM 89 ., I , ia Y: 11.72” 1 Y: 11.67 )r HEIGHT: - 83. 64 k I 16.04 u 35 0 I...

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... Measure- ment of the intensiey and the shape of the profile gives a quantitative analysis of phase boundaries and the influence of finite sizes on the tran~ition.~ Dynamics of phase transitions, ... 0.220. 0.200. ‘p al h L - 3 Od80 a Y ” 2 0 .30 0. f 0.275. z 0.250. 0.225. 0.200 ’ 0.115. t 33 00 34 00 35 00 36 00 Photon energy lev) Figure 2 Su...

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... 177,169,19 23; ibid 180,65,1925. 2 J.J. Lander. Pbys. Rev. 91, 138 2, 19 53. 3 L. A. Harris. J &pi. Pbys. 39 ,3; ibid 1419, 1968. 4 E. N. Sidiafus. Pbys. Rw. B. 16,1 436 ,1977; ... 2P 164 S 3d 9 He 1,He 11,s 3d 18 He 1,He 11,s 3d 29 He 11, S 3d 41 S 4f 25 He 11, S 4f 34 S 4f 60 S 4f 70 S 4f 84 S 4f 99 S 5d 7 He I, He 11,s 4f...

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... 41 = 30 ', the expression reads: (5) In - = 0. 133 El + 4 .38 3 + 2.196 ( 1.6454) El-'- 0.042 EL2 where El is expressed in MeV and the cross section in units of cm2/sr. ... consisting of 240 nm of Si on 170 nm of Si02 on a Si sub-ate. The spectrum in (a) was acquired using a scattering angle of leOo while the spectrum in (b) used a detec...

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... characteristic of PTFE (CF3 at mass 69) and the silicone primer (Si(CH3 )3 at mass 73) . Figures 6 and 7 are secondary ion images of the CF3 and (Si(CH& fragments taken from a 1-mm2 area of ... time) of a silicon sample containing a boron ion implant. elements as a function of time, a profile of the in-depth distribution of the elements is obtained. The...

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... 0.004 ~0.000 03 <0.000 03 0.00004 k3.1 <0.00008 ~0.00 03 <0.0001 <0.001 ~0.0006 ~0.00 03 ~0.06 c0 .3 c0.01 3. 3 0.28 co.001 0.006 co.001 ~0.0005 c0.04 ~0.00 03 c0.005 c0.01 ... 0.00025 0.072 0.0069 0.0019 0.0021 0.044 0.066 33 . 25. 3. 7 9.6 23. 14. 5.4 3. 4 Table 2 Precision of trace elemental analysis of 3N5 199.95%) and 6N...

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... -3 1 zo P c z Y : -2 -4 01 234 56 DEPTH (pm) Figure 8 Profiles of "Si implanted at 10 MeV into Ge measured by the 30 Si (p, yl 31 P res- onant nuclear reaction. 13 the ... grating equation. The intensity of the light in the different orders is a very sensitive function of the shape of the lines of the pattern. If the shape of the lines of t...

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