... Figure 1a, no Ge-NC wasobserved for sample A3 . The SiN layer underwent a swelling of about 4 nm, whereas the thickness of the underlying HfO2and SiO2layers remain almost the same as in the as-deposited ... Skarlatos D, Beltsios K, Tsoukalas D,Bonafos C, Assayag GB, Cherkashin N, Claverie A, Van Den Berg JA,Soncini V, Agarwal A, Ameen M, Perego M, Fanciulli M: Nanocrystalsmanufacturing by ultra-low -energy ... andprepared the draft of the manuscript. Moreover, AS and CB participated in the coordination of study. All authors read and approved the finalmanuscript.Competing interests The authors declare...