Nonlinear Microwave Circuit Design phần 9 docx

... Symp. Dig., 198 9, pp. 1 291 –1 294 . [30] D.G. Thomas, G.R. Branner, ‘Single-ended HEMT multiplier design using reflector networks’, IEEE Trans. Microwave Theory Tech., MTT- 49( 5), 99 0 99 3, 2001. [31] ... 34( 19) , 110–1 19, 198 6. [9] M.J. Rosario, J. Costa Freire, Design techniques for MESFET mixers for maximum conver- sion gain’, IEEE Trans. Microwave Theory Tech., 38(12), 197...

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... (CA), June 199 9, pp. 98 1 98 4. [ 59] D. Sharrit, ‘New method of analysis of communication systems’, IEEE Microwave Theory and Techniques Symposium WMFA: Nonlinear CAD Workshop, June 199 6. [60] V. ... Trans. Microwave Theory Tech., MTT-47(6), 882–8 89, 199 9. [18] P. Perry, T.J. Brazil, ‘Hilbert-transform-derived relative group delay’, IEEE Trans. Microwave Theory Tech., 45, 1214–1...

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... Mixer Design 3 29 7.4 Nonlinear Analysis 332 7.5 Noise 337 7.6 Bibliography 3 39 Chapter 8 Stability and Injection-locked Circuits 341 8.1 Introduction 341 8.2 Local Stability of Nonlinear Circuits ... v k−1 t k − t k−1 (1.17) Nonlinear Microwave Circuit Design 12 NONLINEAR ANALYSIS METHODS | Y ( f )| f − f m + f m ∠ Y ( f ) t Zero-valued for t < 0 ? y ( t ) ∆ t −1 Figu...

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... computer-controlled microwave tuner’, Microwave J., 32, 156–161, 198 9. [8] C. Tsironis, ‘A novel design method of wideband power amplifiers’, Microwave J., 35, 303– 304, 199 2. [9] G. Madonna, A. ... levels for circuit design. Their use lies essentially in the Nonlinear Microwave Circuit Design F. Giannini and G. Leuzzi  2004 John Wiley & Sons, Ltd ISBN: 0-470-84701-8...

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... the gate voltage [92 , 93 , 97 , 99 , 100] or both gate and drain voltages [95 , 98 , 101] have been proposed. Some models are valid in the saturation region of the FET [92 94 , 97 , 99 –101], while others ... are EQUIVALENT -CIRCUIT MODELS 117 g m g ds C ds C gs C gd Figure 3.38 A quasi-static equivalent circuit of an FET C gs C gd C ds, i R gd R i g m g ds Figure 3. 39 A non-quasi...

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... Aug. 199 2, pp. 1 091 –1 096 . [ 69] G. Kompa, ‘Modelling of dispersive microwave FET devices using a quasistatic approach’, Int. J. Microwave Millimetre-Wave Comput Aided Eng., 5(3), 173– 194 , 199 5. [70] ... MTT-38(7), 891 – 895 , 199 0. [85] R. Anholt, S. Swirhun, ‘Equivalent circuit parameter extraction fro cold GaAs MESFETs’, IEEE Trans. Microwave Theory Tech., MTT- 39( 7), 124...

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... AMPLIFIERS 1 0 .9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0 .9 −1 −1 −0 .9 −0.8 −0.7 −0.6 −0.5 −0.4 −0.3 −0.2 −0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 .9 1 2.5 49 2.328 2.106 1.885 1.663 1.442 1.22 1.22 1.22 1.442 1.885 1.663 2.106 2.328 2.5 49 1.442 0 .99 9 k 3 k 2 0.777 0.556 1.22 0.777 0 .99 9 0.777 0.556 0.777 0 .99 9 0 .99 9 2.771 Figure 4.45 Cont...

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... oscillator design. Stability in nonlinear regime for the design of general microwave circuits free of spurious oscillations of nonlinear origin or for the design of intentionally unstable nonlinear circuits, ... linear circuit 264 OSCILLATORS as described above; the degenerate solution is avoided by this formulation. In a nonlinear circuit with a single port connecting the...

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... low bias using a nonlinear design approach’, IEEE Trans. Microwave Theory Tech., 47 (9) , 1670– 16 79, 199 9. [6] R.W. Jackson, ‘Criteria for the onset of oscillation in microwave circuits’, IEEE ... oscillator circuits’, Bell Syst. Tech. J., 48, 193 7– 195 5, 196 9. [2] G.R. Basawapatna, R.B. Stancliff, ‘A unified approach to the design of wide-band microwave solid-state oscillato...

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... −0 .90 10 −0.43 39 1 −0.2225 −0 .97 49 −0 .90 10 0.43 39 0.6235 0.7818 1 −0 .90 10 −0.43 39 0.6235 0.7818 −0.2225 −0 .97 49 1 −0 .90 10 0.43 39 0.6235 −0.7818 −0.2225 0 .97 49 1 −0.2225 0 .97 49 −0 .90 10 −0.43 39 0.6235 ... control, 187 tuning, 194 , 207, 220 HBT, 89, 121, 2 79, 3 19 HEMT, 89 90 , 91 , 94 95 , 121 –122, 136–137, 224, 2 79, 2 89, 3 19, 332 Heterojunction, 85, 89...

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