Cutting edge nanotechnology_1 pptx
... I ds Current (A) Gate voltage (V) 0 -1 -2 -3 -4 -5 10 -13 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 Impact Ionization at 10 0 o C -I sub +I sub NMOSFET W/L=20/0 .15 Tox=3 nm : I gate : I sub : I ds Current ... and (b) p-MOSFETs. -3 -2 -1 0 1 2 3 10 -11 10 -10 : Control : 30keV, 10 14 /cm 2 imp. : 60keV, 10 14 /cm 2 imp. : 60keV, 10 15 /cm 2 imp. N...
Ngày tải lên: 26/06/2014, 23:21