Báo cáo hóa học: "Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition" docx

... ! þ "h ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi 8m W hh E 1hh p sin L ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi 2m W hh E 1hh "h 2 r ! ð3Þ Nanoscale Res Lett (2007) 2:149–154 151 123 NANO EXPRESS Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum ... in the future experiments. Conclusions In summary, the interwell coupling effect in Si/ Si 0.66 Ge 0.34 CQWs structures...

Ngày tải lên: 22/06/2014, 22:20

... in an AB interfe- rometer in which the RSOI is considered by introducing a spin-dependent phase factor in the linewidth matrix elements. Due to the interplay between the quantum destructive interferenc ... asymme- trical couplings between the QDs and metallic electrodes induce the enhancement of s pin-dependent Seebeck effects in the vicinity of the corresponding spin-dependent as...

Ngày tải lên: 20/06/2014, 23:20

... could result in varying amounts of photobleaching leading to reduced produc- tion of ROS at high concentrations. 4.3 Cellular responses to PDT induced damage It is intriguing that the effects of ... to microtubular (MT) network since it has been shown that MT disruption is involved in apoptosis [50,51]. Depo- lymerization of tubulin may be caused by an increase in PDT induced intrac...

Ngày tải lên: 18/06/2014, 16:20

... detected in 55% of Rubinstein–Taybi syndrome patients, leaving the diagnosis in 45% of patients to rest on clinical features only. Interestingly, this microdeletion of 16p13.3 was found in a young ... abnormality in the cyclic adenosine monophosphate-response element-binding protein has previously been determined as a cause of Rubinstein–Taybi syndrome. However, microdeletion of...

Ngày tải lên: 21/06/2014, 19:20

... within every bin. Since the operations in one embedding unit are independent from those in the other units, we only discuss the operations in an arbitrary unit. In the normal LSB hiding, a string ... when the bin size is tiny because there are few coordinates in the same bin. When there is no coordinate in one bin, no data can be embedded despite how many coordinates in the othe...

Ngày tải lên: 22/06/2014, 00:20

... digital cinema required the replacement of the analog processing stages in the imaging chain by digital processing modules, opening the way for the introduction to the imaging pipeline of the speed ... from demosaicking as well as zippers and rings arising from zooming. Likewise, Chung and Chan proposed in [20] a joint demosaicking-zoomingalgorithm based on the interpolation of edge inf...

Ngày tải lên: 22/06/2014, 00:20

... InCl and InCl 2 while the amount of InCl increases with increasing tem- perature [33]. Thus, during growth for T [ 400 °C InCl 3 decomposes predominantly into InCl according to, InCl 3 ! InCl þ ... of In 2 O 3 NCs by direct oxidation of In with O 2 and also by the incorporation of NH 4 Cl in the In under N 2 . The reaction of In and NH 4 Cl yields InN NCs using NH 3 . The synthe...

Ngày tải lên: 22/06/2014, 01:20

... enhanced by increased Ce 3+ ions. These results demonstrate that Ce doping in ZnO NRs can be an efficient luminescence center in ZnO NRs without post thermal annealing processes. Competing interests ... mM of zinc acetate dihydrate (Zn(CH 3 COO) 2 ·2H 2 O) dissolved in ethanol solution, followed by drying at 100°C for 5 min. The Ce-doped ZnO NRs were grown by placing the...

Ngày tải lên: 20/06/2014, 23:20

... a minority belongs to the mixed type. In Figure 4 inversion domain boundaries appear in both pictures as straight lines as indicated. These have an inclination of 60° with respect to the interface, ... stacking faults are found running perpendi- cular to the [0001] direction as indicated, i.e., they lie in the C -plane. T he elongated spots in the diffraction pat- tern inset in Figu...

Ngày tải lên: 21/06/2014, 03:20

... freestanding GaN grating by molecular beam epitaxy Yongjin Wang * , Fangren Hu, Kazuhiro Hane Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by ... patterned growth of InGaN/GaN quantum wells (QWs) on freestanding nanoscale GaN gratings by MBE. Various freestanding GaN gratings are processed on a GaN-on- silicon substrate by...

Ngày tải lên: 21/06/2014, 05:20