Báo cáo hóa học: " Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation" pptx

... 1:20–31 DOI 10.1007/s11671-006-9009-5 123 NANO REVIEW Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation S. F. Yoon Æ C. Y. Liu ... ml and 2.5 ml have been reported for gas -source molecular beam epitaxy (GSMBE)-grown Ga 0.3 In 0.7- N 0.04 As 0.96 and InN 0.02 As 0.98 QDs, respectively...

Ngày tải lên: 22/06/2014, 22:20

... double quantum dot [10-13]. Despite the simplicity, these sys tems show a rich physics. In the wide quantum dots, where the tunneling is suppressed, and the motion is classical, the interdot transfer ... [9]. In double quantum dots an interesting charge dynamics occurs and requires theoretical understanding. In this article we address full driven by an external electric field spin...

Ngày tải lên: 21/06/2014, 05:20

... scalable bandwidth and spectrum aggregation with transmission bandwidths up to 100 MHz in DL and UL. (viii) LTE-Advanced must guarantee backward compatibil- ity and interworking with LTE and with ... MHz of bandwidth for both downlink and uplink. This bandwidth is equivalent to 50 LTE resource blocks. The evaluation was focused on the performance experienced by a pedestrian user an...

Ngày tải lên: 21/06/2014, 23:20

... allows position and shape estimation even in clutter or when multiple targets interact and occlude each other. The features in the scene are classified as good, suspicious, malicious, and neutral, and this ... Duric, A. Rosenfeld, and H. Wechsler, “Tracking groups of people,” Computer Vision and Image Understanding, vol. 80, no. 1, pp. 42–56, 2000. [7] P. Perez, C. Hue, J. Vermaak,...

Ngày tải lên: 22/06/2014, 00:20

... Bullen, Handbook of Means and Their Inequalities, vol. 560 of Mathematics and Its Applications,Kluwer Academic Publishers, Dordrecht, The Netherlands, 2003. Journal of Inequalities and Applications ... n  n  x 1 − x 2  2 , 3.2 and therefore, 3.1 follows from 3.2. Journal of Inequalities and Applications 7 Differentiating 3.6 with respect to x 1 and x 2 , respectively, a...

Ngày tải lên: 22/06/2014, 02:20

... annealing affects both size and density of the dots. For samples A1 and A2 (panels d and e), corresponding to L = 1.8 and 2.0 MLs, respectively, the typical dot diameter is d~50 nm and the typical height ... density of states (DOS) in the conduction band (CB) and valence band (VB) for a (a) double heterostructure, (b) quantum well, (c) quantum wire, and (d) quantum box l...

Ngày tải lên: 22/06/2014, 22:20

... heU(x)i and the total energy expectation value, yielding hE n i¼jC o j 2 "h 2 2m  K n k 2 D  eV o W n "# ; ð8Þ where K n , W n are functions of eV o /jT and the quantum number n, and ... center and the voltage drop is localized at nanometer-width charged layers (plasma sheaths). Eventually the energy level is pushed above the edge-well depth V o and the wave function e...

Ngày tải lên: 21/06/2014, 20:20

Ngày tải lên: 21/06/2014, 20:20

... conductance G r and spin polarization p as functions of the Fermi level e with k = U = 0 and various Dt. In this and all following figures, the normal inter -dot tunneling coupling t c = 1 and the dots’ ... Fermi level for fix / R = p/2, U = 4, Dt = t c and different u. In this and the following figure, the solid and the dashed lines are for the spin-up and spin-down electrons...

Ngày tải lên: 22/06/2014, 01:20

... telecommunication bands. Keywords Quantum dot Æ Site-Control Æ Atomic-force microscope Æ Local oxidation Æ Quantum computer Æ Quantum communication Introduction In general, self-assembled semiconductor quantum ... 100 10 –1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 quadratic linear (a) dot a dot b 77K 140K 10K dot c dot a 45K Integrated PL Intensity (a.u.) Excitation Density (1...

Ngày tải lên: 22/06/2014, 22:20