Báo cáo hóa học: " Lithography-Free Fabrication of Large Area Subwavelength Antireflection Structures Using" pdf

... demonstrated lithography-free, sim- ple, and large area fabrication method for subwavelength antireflection structures (SAS) to achieve low reflectance of silicon (Si) surface. Thin film of Pt/Pd alloy ... function of the wavelengths of light irradiated on subwavelength antireflection structures with different height Nanoscale Res Lett (2009) 4:364–370 369 123 NANO EXPR...

Ngày tải lên: 22/06/2014, 01:20

... Stamped letter “S”.(b) Interface of the stamped and unstamped area of the nano- needle array. (c) Contact angle of the stamped area. (d) Contact angle of the unstamped area with nano-needles. Kim ... copolymer solution and taping-off of the resulting honeycomb film, would be advantageous for the fabrication of super-hydropho- bic surfaces with respect to cost and ease of...

Ngày tải lên: 20/06/2014, 23:20

... metals. Furthermore, it is unique with the chem- ical reactivity capable of serving as precursors for the fabrication of conductive structures by ink-jet printing [7] or forming CuInSe 2 or CuIn x Ga 1-x Se 2 semiconducting nanomaterials ... (JEOL JEM-2010) with an accelerating voltage of 100 kV. TEM samples were prepared by placing a drop of a dilute dis- persion of Cu nanopart...

Ngày tải lên: 22/06/2014, 00:20

... possess a larger surface area than S3, which is may be derived from the size of nanoparticles composed of iron oxide NPs [30]. The Barret–Joyner– Halender (BJH) adsorption cumulative pore volume of ... analyzer. The percentages of individual elements detected were determined from the relative composition analysis of the peak areas of the bands. It is based on the relative peak a...

Ngày tải lên: 22/06/2014, 00:20

... Innovation Project from the Ministry of Education of China under Grant No. NK0713. The authors also thank Cui Guoxin (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science) for many helpful ... In order to compare the intensity of the luminescence of all the samples as accurately as possible, the position and power of the pumping beam and the width of the...

Ngày tải lên: 22/06/2014, 01:20

... the network of NTs as a part of the cytokine network in the skin. Modified expression in the skin of patients with AD compared to normal skin give new insides in the role of NT in the pathogenesis of ... of HaCaT cells with increasing concentrations of NT-3 To assess the functional effects of a decreased NT-3 secre- tion, in vitro studies were performed that assessed the secre...

Ngày tải lên: 20/06/2014, 00:20

... where the bur- den of HIV infection is high and the dearth of resources forkidneycareprofound,thehighprevalenceof Table 2 Serum cystatin C and eGFR of children with different stages of HIV disease. Variables ... contribution of Dr IMO Adetifa for reviewing the study proforma. Also, we are grateful to the laboratory staff for their professionalism. Author details 1 Department of Pa...

Ngày tải lên: 20/06/2014, 08:20

... in terms of the effect of the lower layer. The crystal growth of the upper BFO (or PZT) layer can be influenced by the lower PZT (or BFO) layers, and the crystallization behavior of the resultant ... surface SEM micrographs of PZT/BFO multilayer thin films. The average thickness of the film after one cycle of drying/sintering was approximately 45 to 55 nm, and the thickness...

Ngày tải lên: 20/06/2014, 23:20

... can be interpreted in terms of the decrease of the density of excimers [40,41]. The decrease of specific surface area with increasing particle sizes reduced the density of intermolecular excimers ... 6:405 http://www.nanoscalereslett.com/content/6/1/405 Page 8 of 8 supporting by the formation of H-aggregation. Above 160°C, the filt ered-up rubrene N Ps exhibited blue lumi- nes...

Ngày tải lên: 21/06/2014, 03:20

... incorporate very large amounts of Li, leading to a nominal capacity of about 4,200 mAh/g, about a factor 11 larger than the current state -of- the-art graphite anode [1]. The redox potential of this system ... galvanic deposition of Cu onto Si is a standard process in IC technology. Nevertheless, as in the case of the over- etching of the pores, deposition of Cu on the bottom...

Ngày tải lên: 21/06/2014, 17:20