Báo cáo hóa học: " The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate" ppt
báo cáo hóa học:" The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate" docx
... 7:87
http://www.nanoscalereslett.com/content/7/1/87
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ORIGINAL PAPER Open Access
The structural and optical properties of
GaSb/InGaAs type-II quantum dots grown on
InP (100) substrate
Zhang Shuhui
1,2
, ... Haiqiang
2
,
Wang Wenxin
2
, Chen Hong
2
and Zhao Liancheng
1*
Abstract
We have investigated the structural and optical properties of...
Báo cáo hóa học: " The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate" ppt
... the type II transition due to the stronger
spatial confine ment of carriers in the QD and the nature
of the direct transition type I transition. It may be the rea-
son that the PL intensity of ... Haiqiang
2
,
Wang Wenxin
2
, Chen Hong
2
and Zhao Liancheng
1*
Abstract
We have investigated the structural and optical properties of type-II GaSb/InGaAs qua...
Báo cáo toán học: " The structural and optical properties of GaSb/InGaAs type- quantum dots grown on InP (100) substrate" ppt
... feature of the type-I band transition. Therefore, the interband
transition of the GaSb QD would be the only proper origin of the high-energy peak. In
the growth process of the sample, the InGaAs ... light emission intensity of the GaSb QD could be stronger than the
type II transition due to the stronger spatial confinement of carriers in the QD and the...
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... the
magnetic properties & SEM images and contributed in the writing of the
manuscript. MMSW participated in the conception and design of the study,
prepared the nanoparticles, explained the ... and contributed in the writing of the manuscript. AGMO
participated in the explanation of the XRD analysis and helped to draft the
manuscript. LB participa...
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... and the CFU counted. The per-
centage of surviving CFU was calculated by the formula
N ⁄ N
control
· 100, where N and N
control
were the numbers of
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tive charges on the surfaces of elafin and SLPI mole-
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... which
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the sample was sintered at 950°C for 2 h due to the influ-
ence of a high Ti concentration ... Bi
0.5
Na
0.5-
TiO
3
-Bi
0.5
Na
0.5
ZrO
3
solid solutions with the addition of
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0.80 mole fracti...
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...
We report here on the first study of the growth kinetics of high-yield, vertical CuO nanowires on
silicon substrates produced by the process of thermal oxidation. The length of the CuO nanowires ... (2)
where E
a
is the activation energy, and R
o
and k are the rate constant and the Boltzmann constant,
respectively. The activation energy for the grow...
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... plot of the friction coefficient (l) versus
scratch length (normal load). The l is calculated by taking
the ratio of the lateral force and the normal load on the
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because of dislo...
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... j"h
2
=m
e
e
2
; the effective
Bohr radius of electron, m
e
, the effective mass of electron,
and j, the dielectric constant of the medium. We seek the
wave function of the problem in the following ... radius of the
electron (or the hole). We consider the case of a heavy
hole, when m
e
m
h
; with m
e
and m
h
being the effective
masses of the el...
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... thorough structural
characterization of the material on the atomic-resolu-
tion scale before entering the discussion on the
influence of nanodimensions on the physical properties
of the material. ... bulk phases (the temperatures of the
maxima in the T-dependent magnetization of the
nanorods and the bulk materials match well) despite
the nanodimensi...
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