Báo cáo hóa học: " The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate" ppt

... 7:87 http://www.nanoscalereslett.com/content/7/1/87 Page 4 of 6 ORIGINAL PAPER Open Access The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate Zhang Shuhui 1,2 , ... Haiqiang 2 , Wang Wenxin 2 , Chen Hong 2 and Zhao Liancheng 1* Abstract We have investigated the structural and optical properties of...

Ngày tải lên: 21/06/2014, 17:20

... the type II transition due to the stronger spatial confine ment of carriers in the QD and the nature of the direct transition type I transition. It may be the rea- son that the PL intensity of ... Haiqiang 2 , Wang Wenxin 2 , Chen Hong 2 and Zhao Liancheng 1* Abstract We have investigated the structural and optical properties of type-II GaSb/InGaAs qua...

Ngày tải lên: 22/06/2014, 00:20

... feature of the type-I band transition. Therefore, the interband transition of the GaSb QD would be the only proper origin of the high-energy peak. In the growth process of the sample, the InGaAs ... light emission intensity of the GaSb QD could be stronger than the type II transition due to the stronger spatial confinement of carriers in the QD and the...

Ngày tải lên: 20/06/2014, 20:20

... the magnetic properties & SEM images and contributed in the writing of the manuscript. MMSW participated in the conception and design of the study, prepared the nanoparticles, explained the ... and contributed in the writing of the manuscript. AGMO participated in the explanation of the XRD analysis and helped to draft the manuscript. LB participa...

Ngày tải lên: 21/06/2014, 01:20

... and the CFU counted. The per- centage of surviving CFU was calculated by the formula N ⁄ N control · 100, where N and N control were the numbers of CFU obtained after 3 h of incubation with and ... distribution of posi- tive charges on the surfaces of elafin and SLPI mole- cules [1] may well be responsible for their different sensitivities to the ionic environme...

Ngày tải lên: 18/02/2014, 17:20

... which corresponded to the relative densities of around 95% of the theoretical densities. For the 0.20 mole fraction of Zr, the sample was sintered at 950°C for 2 h due to the influ- ence of a high Ti concentration ... Bi 0.5 Na 0.5- TiO 3 -Bi 0.5 Na 0.5 ZrO 3 solid solutions with the addition of a Zr concentration from 0.20, 0.35, 0.40, 0.45, 0.60, and 0.80 mole fracti...

Ngày tải lên: 21/06/2014, 17:20

... We report here on the first study of the growth kinetics of high-yield, vertical CuO nanowires on silicon substrates produced by the process of thermal oxidation. The length of the CuO nanowires ... (2) where E a is the activation energy, and R o and k are the rate constant and the Boltzmann constant, respectively. The activation energy for the grow...

Ngày tải lên: 21/06/2014, 17:20

... plot of the friction coefficient (l) versus scratch length (normal load). The l is calculated by taking the ratio of the lateral force and the normal load on the indenter [31]. The fluctuation in the ... the literatures. Among all, crack formation [23], sudden occurrence of pressure-induced phase transformation [24] and, generation of slip bands because of dislo...

Ngày tải lên: 22/06/2014, 01:20

... j"h 2 =m e e 2 ; the effective Bohr radius of electron, m e , the effective mass of electron, and j, the dielectric constant of the medium. We seek the wave function of the problem in the following ... radius of the electron (or the hole). We consider the case of a heavy hole, when m e  m h ; with m e and m h being the effective masses of the el...

Ngày tải lên: 22/06/2014, 01:20

... thorough structural characterization of the material on the atomic-resolu- tion scale before entering the discussion on the influence of nanodimensions on the physical properties of the material. ... bulk phases (the temperatures of the maxima in the T-dependent magnetization of the nanorods and the bulk materials match well) despite the nanodimensi...

Ngày tải lên: 22/06/2014, 22:20