Báo cáo hóa học: " Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes" pot
... images Nanoscale Res Lett (2010) 5:576–580 577 123 NANO EXPRESS Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes Ch. Heyn • A. Stemmann • T. Ko ¨ ppen • Ch. ... publications. A first functionalization of the nanoholes, the fabrication of a novel type of very uniform, strain-free GaAs QDs by filling of LDE nanoholes in Al...
Ngày tải lên: 22/06/2014, 00:20
... We study the optical emission of single GaAs quantum dots (QDs). The QDs are fabricated by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion by local droplet ... the QDs were capped by a 120-nm-thick Al 0.35 Ga 0.65 As barrier. Types of GaAs Quantum Dots Figure 1a shows an atomic force microscopy (AFM) image of the AlGaAs su...
Ngày tải lên: 21/06/2014, 17:20
... amplification by stimulated emission of radia- tion: quantum generation of coherent surface plasmons in nanosystems. Phys Rev Lett 2003, 90:27402. 12 Figure 2 Strong coupling among semiconductor quantum dots ... these parameters is proposed by the observation of the signal light absorption spectrum of SQD in a system consisted of an SQD and an MNP. Based on the achievement...
Ngày tải lên: 21/06/2014, 17:20
Báo cáo hóa học: " Optical properties of exfoliated MoS2 coaxial nanotubes - analogues of graphene" pdf
... energy- dispersive detecto r with the angular range of 2θ from 5° to 75° with a step size of 0.04° and a collection time of 3 to 4s. The process of exfoliation was elucidated by ultraviolet- visible [UV-Vis] spectroscopy. ... of the MoS 2 nanotube during the first stage of the exfoliation process; (d) TEM micrograph of the MoS 2 single layers as a final stage of nanotube exf...
Ngày tải lên: 20/06/2014, 22:20
Báo cáo hóa học: " Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns" doc
... Influence of In/Ga intermixing on the optical properties of InGaAs /GaAs quantum dots. J Cryst Growth 1998, 195:540-545. 15. Leon R, Kim Y, Jagadish C, Gal M, Zou J, Cockayne DJH: Effects of interdiffusion ... of interdiffusion on the luminescence of InGaAs /GaAs quantum dots. Appl Phys Lett 1996, 69:1888-1890. 16. Malik S, Roberts C, Murray R, Pate M: Tuning self-assem...
Ngày tải lên: 21/06/2014, 01:20
Báo cáo hóa học: " Optical Properties of GaSb Nanofibers" potx
... nanofibers may well have vast applications in optoel ectronic devices for th eir unique optical properties. Acknowledgements This work was supported by the Office of Basic Energy Sciences of ... 6:6 http://www.nanoscalereslett.com/content/6/1/6 Page 6 of 6 Figure 3 SEM and TEM images of GaSb nanofibers formed with Au + ions irradiation after annealed at 600°C for 10 min . a SEM...
Ngày tải lên: 21/06/2014, 08:20
Báo cáo toán học: " Strong coupling among semiconductor quantum dots induced by a metal nanoparticle" ppt
... interaction of SQDs and SPP field in MNP via a novel 9 Figure 3 Strong coupling among semiconductor quantum dots in- duced by a metal nanoparticle Yong He and Ka-Di Zhu ∗ Key Laboratory of Artificial ... right inset of Figure 2). To obtain the probability of 8 33. De Abajo FJG: Optical excitations in electron microscopy. Rev Mod Phys 2010, 82:209. 34. Wootters WK: Entanglement...
Ngày tải lên: 20/06/2014, 20:20
Báo cáo hóa học: " Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure" potx
... (a.u.) as-grown 0.0 0.1 0.2 InGaAs QW (a) Figure 5 Annealing temperature dependence of integrated intensity of QDs and InGaAs QW (a), peak energy of GS and ES1 of QDs (b), FWHM of GS and ES1 of QDs (c). Zhou ... study of 1.3 μm undoped InAs/InGaAs /GaAs quantum dots. Appl Phys Lett 2008, 93:041912. 24. Seravalli L, Bocchi C, Trevisi G, Frigeri P: Properties of wetting la...
Ngày tải lên: 21/06/2014, 04:20
Báo cáo hóa học: "Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate" docx
... liquid drops of alloy of Au with the semiconductor material of the substrate. The MBE growth of GaAs Be-doped (P = 1 9 10 18 cm -3 , as mea- sured from a planar layer) NWs is carried out by the conventional ... oxygen plasma until the tips of GaAs NWs are exposed. Conventional Ohmic contacts for the backside of n-type substrate are fabricated by electron-beam evaporating...
Ngày tải lên: 22/06/2014, 00:20
báo cáo hóa học:" Optical imaging of the peri-tumoral inflammatory response in breast cancer" docx
... vivo optical imaging of a control FVB/n mouse after intravenous injection of DiD-labeled monocytesFigure 3 (a) In vivo optical imaging of a control FVB/n mouse after intravenous injection of DiD-labeled ... Ratio of fluores- cence of cells to media (Y-Axis) for each sample of cells (X- Axis). The ratio of labeled cells to media was significantly higher at all concentrati...
Ngày tải lên: 18/06/2014, 15:20