Báo cáo hóa học: " Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition" doc

Báo cáo hóa học: " Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition" doc

Báo cáo hóa học: " Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition" doc

... preparations of uniform catalyst layers through PVD process on non-planar surfaces, the synthesis of uniform aligned CNTs on all surface of substrate was only achieved by floating catalyst process ... Inspired by the growth of CNTs on all the surfaces of Si wafers, we conducted the ALD deposition of Fe 2 O 3 catalyst on the quartz fiber with a diameter of about 10 lm...

Ngày tải lên: 21/06/2014, 17:20

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Báo cáo hóa học: " Scalable synthesis of aligned carbon nanotubes bundles using green natural precursor: neem oil" doc

Báo cáo hóa học: " Scalable synthesis of aligned carbon nanotubes bundles using green natural precursor: neem oil" doc

... CVD-grown carbon- nanotube films. Appl Phys A 2001, 73:409. 28. Zhou K, Huang JQ, Zhang Q, Wei F: Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition. ... selective growth of aligned carbon nanotubes. Appl Phys Lett 2000, 77:3764. 6. Mayne M, Grobert N, Terrones M, Kamalakaran R, Ruhle M, Kroto HW, Wal...

Ngày tải lên: 21/06/2014, 06:20

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Báo cáo hóa học: " Zenithal alignment of liquid crystal on homeotropic polyimide film irradiated by ion beam" pdf

Báo cáo hóa học: " Zenithal alignment of liquid crystal on homeotropic polyimide film irradiated by ion beam" pdf

... polyimide AL-00010 substrate of which the ion beam conditions are ion beam energy of 300 eV, ion beam current density of 50 µA/cm 2 , exposure angle of 30°, and exposure time of 30 s was used as a ... characteristics of a nematic liquid crystal [LC] in terms of ion beam exposure conditions on the homeotropic polyimide alignment layer. The pretilt angle of LCs in the case...

Ngày tải lên: 20/06/2014, 23:20

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Báo cáo hóa học: "Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation" ppt

Báo cáo hóa học: "Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation" ppt

... any catalyst or C on the ZnO seed layers prepared by PLD. The dependence of the orientation, morphology, crystal quality, and optical quality of the nanorod arrays on the quality of the seed layer ... result strongly suggests that the growth direction of the nanorods on the ZnO films prepared by PLD is along ZnO [0001]. Moreover, since neither catalysts nor carbon were...

Ngày tải lên: 22/06/2014, 01:20

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Báo cáo hóa học: " Combinatorial growth of Si nanoribbons" pptx

Báo cáo hóa học: " Combinatorial growth of Si nanoribbons" pptx

... of a few micro- meters, and a lengt h of a hundreds of micromet ers (Figure 1a, b). To address the growth mechanism, the evolution of Si NRs over time was examined by TEM. Whil e the degree of ... nanoribbons reported here is growth mechanism, wherein the former is grown by VS mechanism without catalyst while the latter is grown by combinatorial VLS and VS mechan- ism...

Ngày tải lên: 21/06/2014, 01:20

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báo cáo hóa học: " Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering" docx

báo cáo hóa học: " Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering" docx

... by a ZnO target magnetron sputtering. The stoichiometry of the films was checked under different growth conditions by non-RBS spectro- scopy. Prior to the ZnO growth, a gold ultra thin underlayer ... mechanism of single crystal growth. Appl Phys Lett 1964, 4:89-90. 5. Givargizov EI: Growth of whiskers by the vapor-solid-liquid in current topics. In Material Science. Volume 1...

Ngày tải lên: 21/06/2014, 02:20

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Báo cáo hóa học: " Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy" docx

Báo cáo hóa học: " Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy" docx

... other growth techniques, the selective growth of GaN by molecular beam epitaxy (MBE) is relative difficult [11 ,12]. The substrate also impacts on the epitaxial growth. As the epitaxial growth of ... substrate by a combination of electron beam (EB) lithography, fast atom beam (FAB) etching of GaN, and deep reactive ion etching (DRIE) of silicon. The patterned growth by...

Ngày tải lên: 21/06/2014, 05:20

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báo cáo hóa học:" Initial Growth of Single-Crystalline Nanowires: From 3D Nucleation to 2D Growth" docx

báo cáo hóa học:" Initial Growth of Single-Crystalline Nanowires: From 3D Nucleation to 2D Growth" docx

... 5:1057–1062 123 concentration of metal ions to recover. This deposition mode favors the growth of existing nuclei instead of for- mation of new nuclei, thus, perfect crystalline quality and preferentially orientated growth ... current–time curve at the initial growth of Co nanowires, c Cyclic Voltammetry curve for Co nanowires Fig. 7 A sketch of the nucleation and growth p...

Ngày tải lên: 21/06/2014, 18:20

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Báo cáo hóa học: " Controlled Growth of Carbon Spheres Through the Mg-Reduction Route" pdf

Báo cáo hóa học: " Controlled Growth of Carbon Spheres Through the Mg-Reduction Route" pdf

... TEM images of the samples: a carbon hollow spheres prepared at 400 °C; b carbon hollow capsules prepared at 480 °C; c carbon solid spheres prepared at 600 °C; d HRTEM image of the carbon hollow ... that of the carbon hollow capsules. So, the reaction temperature needs to be increased further for the formation of solid carbon spheres. The details of the process for...

Ngày tải lên: 22/06/2014, 00:20

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báo cáo hóa học: " Reduced inclination of cervical spine in a novel notebook screen system - implications for rehabilitation" docx

báo cáo hóa học: " Reduced inclination of cervical spine in a novel notebook screen system - implications for rehabilitation" docx

... extension of computer screen (38 cm upper edge of screen) Position 2 Second extension of computer screen (33 cm upper edge of screen) Position 3 Second extension of computer screen (31 cm upper edge of ... diseases. Introduction Over the past centuries a profound change in the work reality of most citizens has happened worldwide. In Europe at th e end of the 19 th century gr...

Ngày tải lên: 20/06/2014, 00:20

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