Báo cáo hóa học: " Fabrication of Porous TiO2 Hollow Spheres and Their Application in Gas Sensing" pdf

... thin film sensor exposed to methanal (HCHO) gas at different operating temperatures (200, 300 and 400° C). In the gas- sensing test, HCHO gas was diluted in water vapor, and the flow velocity of ... Beijing, China G. Yang Á P. Hu Á Y. Cao Á F. Yuan (&) State Key Laboratory of Multi-phase Complex System, Institute of Process Engineering, Chinese Academy of Sciences, 1001...

Ngày tải lên: 21/06/2014, 17:20

... performed in a solu- tion containing dissolved calcium and phosphorus ions resulting in the deposition of a thin and uniform layer of calcium phosphate compound on the 3D porous sub- strate, with grain ... bone-implant integration osteoconductive coatings and the methods of application thereof are continuously being developed and applied to highly porous and roughene...

Ngày tải lên: 20/06/2014, 07:20

... out and rinsed in methanol for 5 min to destroy the hydrogen bonding and removes selectively HABA from thin film, and resulted a nanoporous thin film, the AFM revealed the orientation order is only of ... smashed ring in the FFT plot (Fig. 2). However, further prolonging solvent annealing time to about 72 h in mixture atmosphere lead to a dramatically increase in the long-range...

Ngày tải lên: 22/06/2014, 01:20

... risks and symp- toms of PTSD are prevalent among nurses in such institu- tions. Interestingly in spite of being a high risk exposure envi- ronment the high security forensic psychiatry and the ... high frequency of violence. During the year of the study (2006), staff experienced 221 incidents of threat and vio- lence corresponding to 13.8 incidents/bed/year of which 7.4...

Ngày tải lên: 18/06/2014, 18:20

... result of the release of Zn ions from the nanowires. The interface of coupled Si nanowires and neurons shows no clefts and is comprised of a SiO 2 layer of 4 nm and a PLL coating layer of 4 nm. Formation ... sensitive monitoring and/ or stimulating of neurons, since and omega- or all- surround gating effect is expected, akin to advanced tran- sistor structures [27]. Con...

Ngày tải lên: 22/06/2014, 00:20

... Researcher in 2003 and a Permanent Researcher/Lecturer in 2005 at the Department of Information Engineering of the University of Pisa. He joined the Department of Electrical and Electronic Engineering ... Electronic Engineering “Laurea” and Ph.D. degrees at the University of Pisa (Italy) in 1990 and 1994. Since October 2000 he has been an Associate Professor at the Dep...

Ngày tải lên: 22/06/2014, 23:20

... pore diameter and interval are *60 and 120 nm, respectively. Significantly, a simple chemical etching of the porous alumina film in NaOH solution can result in splitting of the pore wall and give alumina ... etching of the porous anodic alu- mina film. Experimental Details In our work, the fabrication of AlN nanowires mainly involves three steps: preparation of porou...

Ngày tải lên: 21/06/2014, 20:20

... uniform, with interplanar spacing of roughly 0.468, 0.362, and 0.284 nm, corresponding to the (100), (110), and (020) lattice spacings of the ZnWO 4 structure. In addition, the indexed selected ... and recorded in a voltage window between 0.01 and 3.0 V. Results and disc ussions The obtained powder of 10 wt.% carbon-loaded ZnWO 4 became dark grey due to the uniform coating...

Ngày tải lên: 20/06/2014, 23:20

... after fabricating patterns. Figure 4 Imprinting process using replicated fluorinated polymer-coated flexible PET mold. (a) Imprinted on flat Si substrates and (b) imprinted on curved acryl substrates. Shin ... lithography system. Figure 2 Fabrication of UV nanoimprint template .Fabrication using hot embossing process of PET film coated with fluorinated polymer layer. Shin et al. Nano...

Ngày tải lên: 21/06/2014, 02:20

... (FEI Co.) operating at 200 keV. Results and discussion The main characteristics of the nanostructuring process were investigated by a combination of AFM, HR-SEM, HR-TEM, and EDS. In particular, ... etch- ing and wet cleaning with an HCl/H 2 O solution res ults in the formation of tapered H fO 2 etch profiles. Optimi- sation of the CF 4 plasma composition and etch bias Figu...

Ngày tải lên: 21/06/2014, 03:20