Solid State Circuits Technologies Part 13 docx

... 25 MPa. 20 μ m (W) 62 μ m (L A ) 62 μ m (L B ) Rotated angle: α = 5 ° 13 μ m (H) Solid State Circuits Technologies 362 shown in Fig. 12(a). To cope with this problem, slots were ... 60 ) 130 .9 kHz f va = = D 130 .9 [dB] (d) θ = 60° f [kHz] f [kHz] f [kHz] Each data is normalized, so that the peak value when / sinfva θ = is 0 dB. (a) θ = 30° (b) θ = 40° Soli...

Ngày tải lên: 21/06/2014, 14:20

... (23) Therefore, the output load current I 2 can be expressed as Solid State Circuits Technologies Solid State Circuits Technologies 16 M 12 M 1 M 2 I REF M 3 M 4 M 5 M 6 M 7 M 8 M 9 M 10 M 11 ... techniques [24]. Solid State Circuits Technologies 2 The following sections provide overviews of previous reported low-power reference circuits and a detail...

Ngày tải lên: 21/06/2014, 14:20

... distance-evaluating methods are shown in the remaining part of Fig. 6, which is an enlarged Solid State Circuits Technologies 24 [13] K. Ueno, T. Hirose, T. Asai, Y. Amemiya, “A 300 nW, ... IEEE J. Solid- State Circuits, vol. 44, no. 7, pp. 2047-2054, Jul. 2009. [14] W.M. Sansen, F. O. Eynde, M. Steyaert, “A CMOS temperaturecompensated current reference,” IEEE J. Soli...

Ngày tải lên: 21/06/2014, 14:20

... 1424404398, San Francisco, CA, United States, Dec 2006, Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, United States. Solid State Circuits Technologies 68 Gate voltage ... 7.3 × 10 6 cm/s. Using the constant current method with reference current, I ref Solid State Circuits Technologies 58 Fig. 8. Constant spacing is observed in the sa...

Ngày tải lên: 21/06/2014, 14:20

... Solid State Circuits Technologies 258 increasing interest from both academia and industry. The block diagram ... logic cell ReceiverTransmitter Laser Fig. 19. Block diagram of OI system (Haurylau et al., 2006) Solid State Circuits Technologies 244 Fig. 5. RC model For capacitance extraction, many techniques ... Telegrapher's equations is 1 () xx xx VVe V...

Ngày tải lên: 21/06/2014, 14:20

... Ni, Al, etc.). Compared with the aforementioned technologies, the LPCVD process is a mature and stable CVD method with Solid State Circuits Technologies 292 Where, E’ and E are the transmitter ... Pitch R 1 R 1 ’ Fig. 18. Simulation condition. © 2009 IEEE Solid State Circuits Technologies 318 where m d is the effective mass of holes for state density, ξ = E...

Ngày tải lên: 21/06/2014, 14:20

... Fig. 11. Time response of reproducibility Solid State Circuits Technologies 432 Fig. 12. ISFET drift characteristics at pH=7, 25°C Fig. 13. Dependence of drift response on pH value ... dependence on drift rate indicates an RMS error of 6.6% between modeled and measured fit. Solid State Circuits Technologies 424 substrate CMOS process, while in Fig. 4(b) is...

Ngày tải lên: 21/06/2014, 14:20

... layer is the best method from the hydrophilicity viewpoint. Solid State Circuits Technologies 460 (Transducers’05), pp .134 6 -134 9, ISBN 0-7803-8994-8, Seoul, Korea, June 2005, IEEE press, ... linearization technique, Proceedings of IEEE Int. Symposium on Circuits and Systems, Vol. 3, 2002, 723–726 Solid State Circuits Technologies 462 Takahashi, Y.; Ukishim...

Ngày tải lên: 21/06/2014, 14:20

... in s p in C VV V V CCC =+ − ⋅ ++ . (1) Advances in Solid State Circuits Technologies Edited by Paul K. Chu Intech Advances in Solid State Circuits Technologies 14 is commonly used as 3.3 ... supply voltages. Advances in Solid State Circuits Technologies 24 Yuan, J. & Stensson, C. (1989). High - speed CMOS circuit technique. IEEE J. Solid- Stat...

Ngày tải lên: 27/06/2014, 01:20

... induce solid state and electrochemical reactions of degradation of structural material. Bio-fouling may be induced by barnacles, mussels and snails, which stick to structural under water parts ... (harmonic suppression). We used HSMS2850 diodes in these circuits for their better performance at this level of incident power. Fig. 13. Medium power DTV rectenna circuit. HSMS 2850 or...

Ngày tải lên: 19/06/2014, 11:20