Solid State Circuits Technologies Part 9 potx
... function F 0 (X) can then be obtained as Eq. 53. Solid State Circuits Technologies 232 00.511.52 .01 .1 1 5 10 20 30 50 70 80 90 95 99 99 .9 99. 99 CMPなし(ref) CMPあり (150sec) ビア抵抗(相対値) 累積度数(%) Kelvin ... 89, No. 4, Apr. 2001, pp456-466, ISSN 0018 -92 19. Chiprout, E. ( 199 8). Interconnect and substrate modeling and analysis: an overview, IEEE J. Solid...
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... standard technologies, recent works have projected to integrate ISFET and interface electronics on the same chip (Wong & White, 198 9; Ravczzi & Conci, 199 8; Bausells et al, 199 9; Palan ... Sensitivity (mV/pH) -45.86~-47.12 -46.34 0.010 Correlation 0 .99 6~0 .99 88 - - Drift (mV/hr) -0.52~-1.71 -1.10 0.52 Hysteresis (mV) 9. 22~13.0 11.1 2.68 Table 1. Parameter of Si 3 N...
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... current I 2 can be expressed as Solid State Circuits Technologies Solid State Circuits Technologies 16 M 12 M 1 M 2 I REF M 3 M 4 M 5 M 6 M 7 M 8 M 9 M 10 M 11 Fig. 11. Simplified schematic ... Editor: Teodora Smiljanic Solid State Circuits Technologies, Edited by Jacobus W. Swart p. cm. ISBN 97 8 -95 3-307-045-2 CMOS Voltage and Current Reference...
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Solid State Circuits Technologies Part 2 ppt
... & Pedroni, V. ( 199 7). “A Low-Power CMOS Analog Vector Quantizer”, IEEE Journal of Solid- State Circuits, Vol. 32, August 199 7, pp. 1278-1283. Delbruck, T. ( 199 1). “Bump Circuits for Computing ... Vector-Quantizer”, Proceedings of the 45th Midwest Symposium on Circuits and Systems (MWSCAS-2002), pp. 196 - 199 , August 2002, Oklahoma. Solid State Circuits Technologi...
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Solid State Circuits Technologies Part 3 doc
... involves Solid State Circuits Technologies 64 4.3 New equation that unifies Natori’s 199 4 theory and Lundstrom’s 199 7 theory We propose a simplified equation that can unify both Natori’s 199 4 ... Natori’s 199 4 theory, the saturation I ds of the short channel NMOS transistor does not follow a (V GS – V th,sat ) 3/2 relationship. Solid State Circuits Technologie...
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Solid State Circuits Technologies Part 11 pdf
... 10 19 cm -3 and then degrades rapidly with the further increase of doping concentration (Schubert, et al., 198 7; French & Evens, 198 9; Gridchin, et al., 199 5; Le Berre, et al., 199 6). ... transmitter energy dependence on the value of misalignment. © 20 09 IEEE © 20 09 IEEE Solid State Circuits Technologies 294 As in (2), in order to keep the same BER, the dif...
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Solid State Circuits Technologies Part 13 docx
... stage Rotational table Spark discharge Chip including fabricated sensors θ =0 o 90 ° 90 ° Ultrasound Solid State Circuits Technologies 380 ... 1,200 μ m 3 0 45° 60 120 135° 0° 90 o 60 o 60 o 90 o 30 o 0 o 30 o 3 0 45° 60° 120° 135° 0 ° 0+4 -4 [dB] ( c ) R =700 μm 90 o 60 o 60 o 90 o 30 o 0 o 30 o 0 +4 -4 [dB...
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Solid State Circuits Technologies Part 16 pptx
... European Polymer Journal, Vol. 38, No. 9, (September 2002) pp. 191 5- 191 9, ISSN 0014-3057 Solid State Circuits Technologies 444 Wong, H. & White, H. ( 198 9) A CMOS -integrated ISFET operational ... F.; Courtois, B.; Husak, M.; ( 199 9) Fundamental noise limits of ISFET-based microsystems, Eurosensors, Vol. 13, 199 9, 1 69- 172 Ravczzi, L. & Conci, P. ( 199 8) ISFE...
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Solar Cells Silicon Wafer Based Technologies Part 9 potx
... 98 1.05 50.00 17.83 2.68 12. 09 2.23 79 5 19. 00 33.70 19. 29 1. 79 14. 09 1. 59 80 516.00 34 .90 19. 24 1. 79 14. 29 1.56 81 615 .95 36.35 19. 10 2.00 13 .95 1.74 82 615.20 36.50 19. 07 2.00 13.81 1.74 Solar ... 40.30 19. 60 2.40 14.06 2.07 74 7 49. 45 38 .95 19. 66 2.26 14.12 1 .99 75 746.45 38.70 19. 69 2.26 14.23 1 .98 76 604.75 45 .95 17.75 2.00 12. 49 1.73 77 98...
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Novel Applications of the UWB Technologies Part 9 potx
... 2006. Mitola, J. & Maguire Jr, G. ( 199 9), ’Cognitive Radio: Making Software Radios More Personal,’ IEEE Personal Communications, vol. 6, no. 4, pp. 13- 18, Aug. 199 9. Radunovic, B., and Le Boudec, ... Ultra-Wideband 2007, ICUWB 2007, pp .91 5- 92 0, 24-26 Sept. 2007. Sklar, B., ( 198 8), ’Digital Communications, Fundamental and Applications’, Prentice Hall 198 8. Urkowitz, H., ( 196...
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