Solid State Circuits Technologies Part 2 ppt
Solid State Circuits Technologies Part 2 ppt
... D. (20 02) . “A Floating-
Gate Vector-Quantizer”, Proceedings of the 45th Midwest Symposium on Circuits and
Systems (MWSCAS -20 02) , pp. 196-199, August 20 02, Oklahoma.
Solid State Circuits Technologies ... Journal of Solid- State Circuits, vol. 37, no. 2 pp. 183 - 190, Feb.
20 02.
[22 ] H. Onodera, “Variability: Modeling and Its Impact on Design,” IEICE Trans. Electr...
Solid State Circuits Technologies Part 16 pptx
... linearization technique, Proceedings of IEEE Int. Symposium on Circuits
and Systems, Vol. 3, 20 02, 723 – 726
Solid State Circuits Technologies
4 62
Takahashi, Y.; Ukishima, S.; Iijima, M. & Fukada, ... O
2
Ar 98%, O
2
2% O
2
O
2
Power (W) 20 0 80 - -
UV
wavelength
(nm)
- - 185, 25 4 1 72
Chamber
pressure (p)
(MPa)
8.0×10
-5
0.1 0.1 5.0×10
-2
Ex...
Solid State Circuits Technologies Part 1 pot
... Solid State Circuits Technologies
14
I
P
(nA)
30
32
34
36
38
40
20 40 60 8 020 0
V
DD
= 1.4 V
V
DD
= 1.5 V
V
DD
= 2. 0 V
V
DD
= 2. 5 V
V
DD
= 3.0 V
20 40 60 8 020 0
V
DD
= 1.4 ... V
GS3
+ V
GS1
= V
GS2
+ V
GS4
, i.e.,
21 4 3
ln( / ) =2/ 2/ .
TBB
VKK IK IK
η
ββ
− (16)
Therefore, the bias current I
B
can be expressed by
2
3
22
2
4
21
34
=(/) .
ln
2
B...
Solid State Circuits Technologies Part 3 doc
... 1 424 404398, San Francisco, CA, United States, Dec 20 06,
Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, United States.
Solid State Circuits Technologies
68
Gate voltage ... al., 20 05).
Fig. 19. Extraction of V
th,sat_IV
from the saturation I
ds
versus V
GS
characteristics of a NMOS
transistor (L = 60 nm, W = 2 μm, V
DS
= 1 .2 V).
So...
Solid State Circuits Technologies Part 9 potx
... Eq. 22 to Eq. 25 (Pozar, 1998) as follows:
11 22 12 21
11
11 22 12 21
1(1 )(1 )
(1 )(1 )
o
SSSS
Y
ZSSSS
−++
=×
++−
(22 )
12
12
11 22 12 21
12
(1 )(1 )
o
S
Y
ZSSSS
−
=×
++−
(23 )
21
21
11 ... 12 21 1 2
1(1 )(1 ) ( 2)
(1 )(1 ) 2
o
SSSS YYY
Y
ZSSSS YY
−++ +
×=+
++−
(26 )
12
12
11 22 12 21
2
11
12 1
21
(1 )(1 )
o
S
YY
ZSSSS
YY
−
×=
+
++−
+
(27 )...
Solid State Circuits Technologies Part 11 pdf
...
22
3
1
42
exp 2
d
LR i
mkT a
Sma
hc h kT
π
πδ ξ
⎡+
⎛⎞
=−−
⎜⎟
⎢
⎝⎠
⎣
4
exp 2
i
ma
hkT
πδ ξ
⎤
⎛⎞
−− −
⎜⎟
⎥
⎝⎠
⎦
, (14)
where
1
22
1
i
m
ckT
ha
πδ
=
− . (15)
Similarly,
22
3
1
42
exp 2
d
RL ... ⎠ ⎝ ⎠
, (20 )
and then Eq. (19) can be rewritten as:
()
1 /2
220
1
exp exp 2
2
d
pq qV
kT a
JccpJ
c m kT kT
δ
δ
δ
π
⎛⎞
⎡⎤
⎛⎞
=−−⋅=
⎜⎟
⎜⎟
⎢⎥
⎝⎠
⎣⎦
⎝⎠
. (21 )
Solid State...
Solid State Circuits Technologies Part 13 docx
...
-30
-25
-20
-15
-10
-5
0
0 20 0 400 600 800 1000
0
-5
-10
-15
-20
-25
-30
0 20 0 400 600 800 1000
Optimal frequency: /( sin 70 ) 120 .6 kHz
f
va
=
=
D
120 .6
[dB]
-25
-20
-15
-10
-5
0
0 20 0 ... =65
μ
m
0.5 V
20
μ
s
(c) r =50
μ
m
0.5 V
20
μ
s
(d) B&K microphone
20 0 mV
20
μ
s
0.5 V
20
μ
s
(a)
r =80
μ
m
R
:
1
,
20 0
μm
Distance :150 mm
Solid...
Solid State Circuits Technologies Part 15 potx
... Solid State Circuits Technologies
426
R
1
, R
2
and C
1
, and the other LPF is provided by R
3
, R
4
, R
DS
and C
2
. The pass band edge f
P
is
set by (2. 9):
43 2 1 21
11
2( || ) 2( ... equations (4.1) to (4.4).
()
2
3
1
2
DM n ox REF TH
W
ICVV
L
μ
=−
(4.1)
()
2
4
1
4
22
DM n ox TH
WVo
ICV
L
μ
⎛⎞
=−
⎜⎟
⎝⎠
(4 .2)
()
2
2
11
(4) ( )
22 2
nox RE...
Solar Cells Silicon Wafer Based Technologies Part 2 ppt
... infrared
[2]
.
Material Refractive index
MgF
2
1.3 – 1.4
Al
2
O
3
1.8 – 1.9
Si
3
N
4
1.8 – 2. 05
SiO
2
1.45 – 1. 52
SiO 1.8 – 1.9
TiO
2
2. 3
ZnS 2. 3 – 2. 4
Ta
2
O
5
2. 1 – 2. 3
HfO
2
1.75 ... vapor, during the oxidation
process and obeys to the following chemical reaction
2Si+ O
2
+2H
2
0 → 2SiO
2
+2H
2
Due to the hydrogen presence in case of w...
Solar Cells Thin Film Technologies Part 2 ppt
...
10
–
11
10
–
6
10
–
9
10
–
10
10
–
7
10
–
8
= 0.1 Ω
cm
10
2
1.0
10
10
3
14
16
18
20
22
24
26
28
0.7
0.8
0.9
1.1
1 .2
1.0
(a)
= 0.1 Ω
cm
10
2
1.0
10
10
3
V
oc
(V)
10
–
11
10
–
6
10
–
9
10
–
10
... (1)-(3).
Anode chemical reaction:
Fe
2+
+2( OH)
-
→Fe(OH)
2
or Fe(OH)
3
(1)
OH
-
→O
2
↑+H
2
(Parasitic reaction)
(2)
Cathode chemical reaction:
2...
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