Solid State Circuits Technologies Part 2 ppt

... D. (20 02) . “A Floating- Gate Vector-Quantizer”, Proceedings of the 45th Midwest Symposium on Circuits and Systems (MWSCAS -20 02) , pp. 196-199, August 20 02, Oklahoma. Solid State Circuits Technologies ... Journal of Solid- State Circuits, vol. 37, no. 2 pp. 183 - 190, Feb. 20 02. [22 ] H. Onodera, “Variability: Modeling and Its Impact on Design,” IEICE Trans. Electr...

Ngày tải lên: 21/06/2014, 14:20

... linearization technique, Proceedings of IEEE Int. Symposium on Circuits and Systems, Vol. 3, 20 02, 723 – 726 Solid State Circuits Technologies 4 62 Takahashi, Y.; Ukishima, S.; Iijima, M. & Fukada, ... O 2 Ar 98%, O 2 2% O 2 O 2 Power (W) 20 0 80 - - UV wavelength (nm) - - 185, 25 4 1 72 Chamber pressure (p) (MPa) 8.0×10 -5 0.1 0.1 5.0×10 -2 Ex...

Ngày tải lên: 21/06/2014, 14:20

... Solid State Circuits Technologies 14 I P (nA) 30 32 34 36 38 40 20 40 60 8 020 0 V DD = 1.4 V V DD = 1.5 V V DD = 2. 0 V V DD = 2. 5 V V DD = 3.0 V 20 40 60 8 020 0 V DD = 1.4 ... V GS3 + V GS1 = V GS2 + V GS4 , i.e., 21 4 3 ln( / ) =2/ 2/ . TBB VKK IK IK η ββ − (16) Therefore, the bias current I B can be expressed by 2 3 22 2 4 21 34 =(/) . ln 2 B...

Ngày tải lên: 21/06/2014, 14:20

... 1 424 404398, San Francisco, CA, United States, Dec 20 06, Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, United States. Solid State Circuits Technologies 68 Gate voltage ... al., 20 05). Fig. 19. Extraction of V th,sat_IV from the saturation I ds versus V GS characteristics of a NMOS transistor (L = 60 nm, W = 2 μm, V DS = 1 .2 V). So...

Ngày tải lên: 21/06/2014, 14:20

... Eq. 22 to Eq. 25 (Pozar, 1998) as follows: 11 22 12 21 11 11 22 12 21 1(1 )(1 ) (1 )(1 ) o SSSS Y ZSSSS −++ =× ++− (22 ) 12 12 11 22 12 21 12 (1 )(1 ) o S Y ZSSSS − =× ++− (23 ) 21 21 11 ... 12 21 1 2 1(1 )(1 ) ( 2) (1 )(1 ) 2 o SSSS YYY Y ZSSSS YY −++ + ×=+ ++− (26 ) 12 12 11 22 12 21 2 11 12 1 21 (1 )(1 ) o S YY ZSSSS YY − ×= + ++− + (27 )...

Ngày tải lên: 21/06/2014, 14:20

... 22 3 1 42 exp 2 d LR i mkT a Sma hc h kT π πδ ξ ⎡+ ⎛⎞ =−− ⎜⎟ ⎢ ⎝⎠ ⎣ 4 exp 2 i ma hkT πδ ξ ⎤ ⎛⎞ −− − ⎜⎟ ⎥ ⎝⎠ ⎦ , (14) where 1 22 1 i m ckT ha πδ = − . (15) Similarly, 22 3 1 42 exp 2 d RL ... ⎠ ⎝ ⎠ , (20 ) and then Eq. (19) can be rewritten as: () 1 /2 220 1 exp exp 2 2 d pq qV kT a JccpJ c m kT kT δ δ δ π ⎛⎞ ⎡⎤ ⎛⎞ =−−⋅= ⎜⎟ ⎜⎟ ⎢⎥ ⎝⎠ ⎣⎦ ⎝⎠ . (21 ) Solid State...

Ngày tải lên: 21/06/2014, 14:20

... -30 -25 -20 -15 -10 -5 0 0 20 0 400 600 800 1000 0 -5 -10 -15 -20 -25 -30 0 20 0 400 600 800 1000 Optimal frequency: /( sin 70 ) 120 .6 kHz f va = = D 120 .6 [dB] -25 -20 -15 -10 -5 0 0 20 0 ... =65 μ m 0.5 V 20 μ s (c) r =50 μ m 0.5 V 20 μ s (d) B&K microphone 20 0 mV 20 μ s 0.5 V 20 μ s (a) r =80 μ m R : 1 , 20 0 μm Distance :150 mm Solid...

Ngày tải lên: 21/06/2014, 14:20

... Solid State Circuits Technologies 426 R 1 , R 2 and C 1 , and the other LPF is provided by R 3 , R 4 , R DS and C 2 . The pass band edge f P is set by (2. 9): 43 2 1 21 11 2( || ) 2( ... equations (4.1) to (4.4). () 2 3 1 2 DM n ox REF TH W ICVV L μ =− (4.1) () 2 4 1 4 22 DM n ox TH WVo ICV L μ ⎛⎞ =− ⎜⎟ ⎝⎠ (4 .2) () 2 2 11 (4) ( ) 22 2 nox RE...

Ngày tải lên: 21/06/2014, 14:20

... infrared [2] . Material Refractive index MgF 2 1.3 – 1.4 Al 2 O 3 1.8 – 1.9 Si 3 N 4 1.8 – 2. 05 SiO 2 1.45 – 1. 52 SiO 1.8 – 1.9 TiO 2 2. 3 ZnS 2. 3 – 2. 4 Ta 2 O 5 2. 1 – 2. 3 HfO 2 1.75 ... vapor, during the oxidation process and obeys to the following chemical reaction 2Si+ O 2 +2H 2 0 → 2SiO 2 +2H 2 Due to the hydrogen presence in case of w...

Ngày tải lên: 19/06/2014, 11:20

... 10 – 11 10 – 6 10 – 9 10 – 10 10 – 7 10 – 8  = 0.1 Ω  cm 10 2 1.0 10 10 3 14 16 18 20 22 24 26 28 0.7 0.8 0.9 1.1 1 .2 1.0 (a)  = 0.1 Ω  cm 10 2 1.0 10 10 3 V oc (V) 10 – 11 10 – 6 10 – 9 10 – 10  ... (1)-(3). Anode chemical reaction: Fe 2+ +2( OH) - →Fe(OH) 2 or Fe(OH) 3 (1) OH - →O 2 ↑+H 2 (Parasitic reaction) (2) Cathode chemical reaction: 2...

Ngày tải lên: 19/06/2014, 11:20